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1. 发明申请

US20080212973A1 Bi-Directional Optical Module 失效
标题翻译：双向光模块
公开(公告)号：US20080212973A1
公开(公告)日：2008-09-04
申请号：US11994325
申请日：2006-07-21
申请人： Jung Ho Song , Yong Soon Baek , Sung II Kim , Ki Soo Kim
发明人： Jung Ho Song , Yong Soon Baek , Sung II Kim , Ki Soo Kim
IPC分类号： H04B10/00
CPC分类号： G02B6/12004 , G02B6/4246 , H01L2224/05553 , H01L2224/48091 , H01S5/005 , H01S5/02212 , H01S5/0264 , H01S5/0265 , H01S5/0683 , H04B10/40 , H01L2924/00014
摘要： Provided is a bi-directional optical module including: a transmission optical element including an SOA (semiconductor optical amplifier) aligned on an optical axis of an LD (laser diode) formed on a substrate; and a reception optical element comprising a PD (photodiode) including a light receiving surface perpendicular to the optical axis of the LD of the transmission optical element.
摘要翻译：提供一种双向光学模块，包括：透射光学元件，包括在形成在基板上的LD（激光二极管）的光轴上对准的SOA（半导体光学放大器）以及包括PD（光电二极管）的接收光学元件，PD（光电二极管）包括垂直于透射光学元件的LD的光轴的光接收表面。

2. 发明授权

US07974539B2 Bi-directional optical module 失效
标题翻译：双向光模块
公开(公告)号：US07974539B2
公开(公告)日：2011-07-05
申请号：US11994325
申请日：2006-07-21
申请人： Jung Ho Song , Yong Soon Baek , Sung Il Kim , Ki Soo Kim
发明人： Jung Ho Song , Yong Soon Baek , Sung Il Kim , Ki Soo Kim
IPC分类号： H04B10/00
CPC分类号： G02B6/12004 , G02B6/4246 , H01L2224/05553 , H01L2224/48091 , H01S5/005 , H01S5/02212 , H01S5/0264 , H01S5/0265 , H01S5/0683 , H04B10/40 , H01L2924/00014
摘要： Provided is a bi-directional optical module including: a transmission optical element including an SOA (semiconductor optical amplifier) aligned on an optical axis of an LD (laser diode) formed on a substrate; and a reception optical element comprising a PD (photodiode) including a light receiving surface perpendicular to the optical axis of the LD of the transmission optical element.
摘要翻译：提供一种双向光学模块，包括：透射光学元件，包括在形成在基板上的LD（激光二极管）的光轴上对准的SOA（半导体光学放大器）以及包括PD（光电二极管）的接收光学元件，PD（光电二极管）包括垂直于透射光学元件的LD的光轴的光接收表面。

3. 发明授权

US07095057B2 Semiconductor laser and method for manufacturing the same 有权
标题翻译：半导体激光器及其制造方法
公开(公告)号：US07095057B2
公开(公告)日：2006-08-22
申请号：US10785054
申请日：2004-02-25
申请人： Jung Ho Song , Chul Wook Lee , Ki Soo Kim , Yong Soon Baek
发明人： Jung Ho Song , Chul Wook Lee , Ki Soo Kim , Yong Soon Baek
IPC分类号： H01S5/227
CPC分类号： H01S5/227 , H01S5/209 , H01S5/223 , H01S5/3211 , H01S5/3213 , H01S2301/18
摘要： Provided is a semiconductor laser including a substrate etched into a mesa structure, an active layer, clad layers, a current blocking layer, an etch-stop, an ohmic contact layer, and electrodes, and a method for manufacturing the same, whereby it is possible to improve a ratio of light output to input current by blocking a leakage current flowing outside an active waveguide in a BH laser.
摘要翻译：提供了一种半导体激光器及其制造方法，该半导体激光器包括蚀刻到台面结构中的基板，有源层，包层，电流阻挡层，蚀刻停止层，欧姆接触层和电极，可以通过阻塞在BH激光器中的有源波导外部流过的漏电流来提高光输出与输入电流的比率。

4. 发明授权

US08426383B2 Anti-aging composition for external use comprising low and high molecular weight hyaluronic acids and the polysaccharides extracted from root bark of Ulmus davidiana 有权
标题翻译：用于外用的抗衰老组合物，包括低分子量和高分子量透明质酸以及从榆树根皮提取的多糖
公开(公告)号：US08426383B2
公开(公告)日：2013-04-23
申请号：US12922353
申请日：2009-03-12
申请人： Ki Ho Kim , Ki Soo Kim , Young Heui Kim , Jin Guk Kim , Kyoung Tae Kim , Chang Sung Han , Kang II Ko
发明人： Ki Ho Kim , Ki Soo Kim , Young Heui Kim , Jin Guk Kim , Kyoung Tae Kim , Chang Sung Han , Kang II Ko
IPC分类号： A61K8/73 , A61K31/728 , A61P17/00 , A61Q19/08 , A61Q19/00
CPC分类号： A61K8/735 , A61K8/97 , A61K36/185 , A61Q19/08
摘要： Disclosed is an anti-aging composition for external use on skin, which includes low-molecular weight hyaluronic acids, high-molecular weight hyaluronic acids and polysaccharides extracted from root bark of Ulmus davidiana, as active ingredients. The composition including the low-molecular weight hyaluronic acids, high-molecular weight hyaluronic acids and polysaccharides extracted from root bark of Ulmus davidiana, in a predetermined ratio, shows significantly improved skin-moisturizing, skin elasticity-enhancing and inflammation-alleviating effects, as compared to a composition using one of the above ingredients alone. Therefore, the composition may be widely used as a pharmaceutical or cosmetic anti-aging composition.
摘要翻译：本发明公开了一种外用于皮肤的抗衰老组合物，其包括低分子量透明质酸，高分子量透明质酸和从榆树根皮提取的多糖作为活性成分。包含低分子量透明质酸，高分子量透明质酸和以榆树根皮提取的多糖的组合物按预定比例显示出显着改善的皮肤保湿，皮肤弹性增强和炎症缓解作用，如与仅使用上述成分之一的组合物相比。因此，该组合物可广泛用作药物或化妆品抗衰老组合物。

5. 发明申请

US20120160269A1 REFRESH WASHING MACHINE AND CONTROL METHOD THEREOF 审中-公开
标题翻译：刷洗机及其控制方法
公开(公告)号：US20120160269A1
公开(公告)日：2012-06-28
申请号：US13337907
申请日：2011-12-27
申请人： Sang Yeon Pyo , Ki Soo Kim , Sang Min Hyun
发明人： Sang Yeon Pyo , Ki Soo Kim , Sang Min Hyun
IPC分类号： D06F17/12 , B08B5/02
CPC分类号： D06F58/203 , D06F58/10 , D06F73/02
摘要： A refresh washing machine including a plurality of spray nozzles to spray air into a clothes receiving compartment of a cabinet, a plurality of opening and closing valves to open and close the spray nozzles, and a controller to open at least one of the opening and closing valves and close the other opening and closing valves so that air is sequentially sprayed from the spray nozzles.
摘要翻译：一种刷新洗衣机，包括多个喷嘴以将空气喷入到橱柜的衣物接收室中，多个打开和关闭喷嘴的打开和关闭阀以及打开至少一个打开和关闭的控制器并关闭另一个打开和关闭阀门，以便从喷嘴依次喷射空气。

6. 发明授权

US07369595B2 Distributed Bragg reflector (DBR) structure in vertical cavity surface emitting laser (VCSEL) diode, method of manufacturing the same, and VCSEL diode 有权
标题翻译：垂直腔表面发射激光器（VCSEL）二极管中的分布式布拉格反射器（DBR）结构及其制造方法以及VCSEL二极管
公开(公告)号：US07369595B2
公开(公告)日：2008-05-06
申请号：US11544832
申请日：2006-10-05
申请人： Ki Soo Kim , Won Seok Han , Sung Bock Kim , Dae Kon Oh
发明人： Ki Soo Kim , Won Seok Han , Sung Bock Kim , Dae Kon Oh
IPC分类号： H01S5/00 , H01S3/08
CPC分类号： H01S5/183 , B82Y20/00 , H01S5/34306
摘要： A DBR structure in a VCSEL diode, a method of manufacturing the DBR structure, and a VCSEL diode are provided. The DBR structure in the VCSEL diode includes: an InAlGaAs layer having a predetermined refractive index and disposed on an InP substrate; a first InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InAlGaAs layer; an InP layer having a lower refractive index than the InAlGaAs layer and disposed on the first InAlAs layer; and a second InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InP layer. Thus, the DBR structure can reduce optical loss due to type-II band line-up at a junction between the InAlGaAs layer and the InP layer, and thus improve device characteristics.
摘要翻译：提供VCSEL二极管中的DBR结构，制造DBR结构的方法和VCSEL二极管。 VCSEL二极管中的DBR结构包括：具有预定折射率并设置在InP衬底上的InAlGaAs层; 第一InAlAs层，其折射率低于InAlGaAs层并且设置在InAlGaAs层上; InP层，其折射率低于InAlGaAs层并且设置在第一InAlAs层上; 和具有比InAlGaAs层低的折射率的第二InAlAs层并且设置在InP层上。因此，DBR结构可以减少在InAlGaAs层和InP层之间的结上的II型带阵列引起的光损耗，从而提高器件特性。

7. 发明授权

US5719375A Stiffener manufacturing method and apparatus thereof 失效
标题翻译：加强剂的制造方法及其装置
公开(公告)号：US5719375A
公开(公告)日：1998-02-17
申请号：US371169
申请日：1995-01-11
申请人： Kun Peo Sung , Ki Soo Kim , Seong Gi Park , Hogu Kim , Tadashi Nakajima , Masamichi Kawakami , Mitsunobu Hanyu , Yoshihiro Suzuki
发明人： Kun Peo Sung , Ki Soo Kim , Seong Gi Park , Hogu Kim , Tadashi Nakajima , Masamichi Kawakami , Mitsunobu Hanyu , Yoshihiro Suzuki
IPC分类号： B23K10/00 , B23K7/00 , B23K7/10 , B23K9/00 , B23K26/00 , B23K26/08 , B23K26/38 , B23K37/047 , B63B9/00
CPC分类号： B63B9/00 , B23K26/0846 , B23K37/047 , B23K2203/04
摘要： A Stiffener manufacturing method and apparatus appropriate for manufacturing a stiffener such as a flat bar is disclosed. The stiffener manufacturing method is composed of a steel plate arrangement step, a strip-cutting step and a pattern cutting step, which are performed in a predetermined interval of time at a position. The stiffener manufacturing apparatus is composed of a matrix working table on which the steel plate is put, a guide rail which is installed in either side of the matrix working table, a stripping carriage which passes over the upper portion of the steel plate installed on the matrix working table, and in which a plurality of stripping torches for cutting the steel plate into a plurality of strips are installed in a predetermined distance spaced from each other, the stripping carriage being capable of linearly travelling along the guide rails, and a patterning carriage which passes over the upper portions of the strips installed on the matrix working table, and in which a patterning torch for cutting the strips into a predetermined pattern is installed, the patterning carriage being movably installed along the guide rail in a predetermined distance spaced from the stripping carriage. Using the stiffener manufacturing method and the apparatus thereof, an exact dimensioned stiffener can be efficiently mass-produced.
摘要翻译：公开了一种用于制造诸如扁钢的加强件的加强剂制造方法和装置。加强件制造方法由在一个位置上以预定的时间间隔执行的钢板布置步骤，切割步骤和图案切割步骤组成。加强件制造装置由放置有钢板的矩阵工作台，安装在矩阵工作台的任一侧的导轨，通过安装在钢板上的钢板的上部的剥离托架矩阵工作台，并且其中用于将钢板切割成多个条的多个剥离炬安装成彼此间隔预定距离，所述剥离托架能够沿着导轨线性移动，并且图案化载架其穿过安装在矩阵工作台上的条的上部，并且其中安装用于将条切割成预定图案的图案形成炬，所述图案化托架沿着导轨可移动地安装在与汽提车使用加强件制造方法及其装置，可以有效地大量生产精确尺寸的加强件。

8. 发明申请

US20090154505A1 WAVELENGTH TUNABLE LASER DIODE USING DOUBLE COUPLED RING RESONATOR 审中-公开
标题翻译：使用双重耦合谐振器的波长激光二极管
公开(公告)号：US20090154505A1
公开(公告)日：2009-06-18
申请号：US12181734
申请日：2008-07-29
申请人： Kwang Ryong OH , Jong Hoi Kim , Dong Churl Kim , Oh Kee Kwon , Ki Soo Kim , Ki Hong Yoon
发明人： Kwang Ryong OH , Jong Hoi Kim , Dong Churl Kim , Oh Kee Kwon , Ki Soo Kim , Ki Hong Yoon
IPC分类号： H01S3/10
CPC分类号： H01S5/1071 , G02B6/12007 , H01S5/026 , H01S5/1032 , H01S5/50
摘要： A wavelength tunable laser diode using a double coupled ring resonator is provided. A new double coupled ring resonator structure is formed by a connection of two ring resonators having different radii so that stable laser oscillation occurs only in a resonant wavelength at which the two ring resonators are simultaneously resonated, and the effective refractive index of the two ring resonators is properly controlled differently for tunable laser oscillation wavelengths. The reproducibility of the optical coupling characteristics of the passive waveguides and the ring resonator can be assured by multi-mode couplers. This results in improved manufacturing productivity of the wavelength tunable laser diode. It is possible to amplify and output an output light without having an effect on oscillation wavelength characteristic by means of an optical amplifier integrated in an output end.
摘要翻译：提供了使用双耦合环形谐振器的波长可调激光二极管。通过具有不同半径的两个环形谐振器的连接形成新的双重耦合环形谐振器结构，使得仅在两个环形谐振器同时谐振的谐振波长下发生稳定的激光振荡，并且两个环形谐振器的有效折射率对于可调谐的激光振荡波长来说，它们被适当地控制不同。通过多模耦合器可以确保无源波导和环形谐振器的光耦合特性的重现性。这导致波长可调激光二极管的制造生产率提高。可以通过集成在输出端的光放大器对放大和输出输出光而不影响振荡波长特性。

9. 发明授权

US07130325B2 Sampled grating distributed feedback wavelength tunable semiconductor laser integrated with sampled grating distributed Bragg reflector 有权
标题翻译：采样光栅分布反馈波长可调谐半导体激光器与采样光栅分布布拉格反射器集成
公开(公告)号：US07130325B2
公开(公告)日：2006-10-31
申请号：US10749043
申请日：2003-12-29
申请人： Su Hwan Oh , Moon Ho Park , Ji Myon Lee , Ki Soo Kim , Chul Wook Lee , Hyun Sung Ko , Sahng Gi Park , Young Chul Chung , Su Hyun Kim
发明人： Su Hwan Oh , Moon Ho Park , Ji Myon Lee , Ki Soo Kim , Chul Wook Lee , Hyun Sung Ko , Sahng Gi Park , Young Chul Chung , Su Hyun Kim
IPC分类号： H01S5/00 , H01S3/08
CPC分类号： H01S5/06256 , H01S5/028 , H01S5/06258 , H01S5/1209 , H01S5/125 , H01S5/2205 , H01S5/227
摘要： The present invention relates to a semiconductor laser, having a construction capable of tuning a wavelength, in which a sampled grating distributed feedback SG-DFB structure portion and a sampled grating distributed Bragg reflector SG-DBR structure portion are integrated. In the present invention, the refraction index are varied in accordance with a current applied to the phase control area in the SG-DFB structure portion and the SG-DBR structure portion, whereby it is possible to continuously or discontinuously tune the wavelength. Therefore, in such a wavelength tunable semiconductor laser, its construction is relatively simple, and it is relatively useful to the manufacturing and mass-producing the semiconductor laser. In addition, such a wavelength tunable semiconductor laser has an excellent output optical efficiency while making it possible to tune the wavelength of the wide band.
摘要翻译：本发明涉及具有能够调谐波长的结构的半导体激光器，其中采样光栅分布反馈SG-DFB结构部分和采样光栅分布布拉格反射器SG-DBR结构部分被集成。在本发明中，折射率根据SG-DFB结构部分和SG-DBR结构部分中的相位控制区域的电流而变化，由此可以连续或不连续地调谐波长。因此，在这种波长可调谐半导体激光器中，其结构相对简单，对制造和批量生产半导体激光器相对有用。此外，这种波长可调谐半导体激光器具有优异的输出光学效率，同时可以调谐宽带的波长。

10. 发明授权

US07045374B2 Method for manufacturing semiconductor optical amplifier having planar buried heterostructure 有权
标题翻译：具有平面掩埋异质结构的半导体光放大器的制造方法
公开(公告)号：US07045374B2
公开(公告)日：2006-05-16
申请号：US10844321
申请日：2004-05-13
申请人： Dong Hun Lee , Eun Deok Sim , Ki Soo Kim , Moon Ho Park
发明人： Dong Hun Lee , Eun Deok Sim , Ki Soo Kim , Moon Ho Park
IPC分类号： H01L21/00
CPC分类号： H01S5/5009 , H01S5/1014 , H01S5/2206 , H01S5/227 , H01S5/3213 , H01S2301/173 , H01S2301/18
摘要： Provided is a method for manufacturing a planar buried semiconductor optical amplifier in which a spot size converter with a double-core structure is integrated, comprising the steps of: after growing a lower cladding layer, a lower waveguide layer and an upper cladding layer on a substrate, patterning a portion of thickness of the lower cladding layer, the lower waveguide layer and the upper cladding layer through an etching process using a dielectric layer pattern to form a lower waveguide; growing a planarization layer on the etched portions of the lower cladding layer, the lower waveguide layer and the upper cladding layer to smooth a surface; after removing the dielectric layer pattern, growing a space layer, an upper waveguide layer and a first cladding layer on the overall upper surface; patterning the first cladding layer, the upper waveguide layer and the space layer through the etching process using the dielectric layer pattern to form an upper waveguide having a horizontal taper area; after growing a first current blocking layer on the etched portions of the first cladding layer, the upper waveguide layer and the space layer of the upper waveguide, growing a second current blocking layer on the exposed portion of the first current block layer excluding the dielectric layer pattern; and after removing the dielectric layer pattern, forming a second cladding layer on the overall upper surface, and forming an electrode on the second cladding layer and the substrate, respectively.
摘要翻译：提供一种制造平面埋入式半导体光放大器的方法，其中集成了具有双芯结构的光斑尺寸转换器，包括以下步骤：在下敷层，下波导层和上包层上生长基板，通过使用电介质层图案的蚀刻工艺构图下包层，下波导层和上包层的厚度的一部分，以形成下波导; 在下包层，下波导层和上包层的蚀刻部分上生长平坦化层，以平滑表面; 在去除介电层图案之后，在整个上表面上生长空间层，上波导层和第一包层; 通过使用电介质层图案的蚀刻工艺图案化第一包层，上波导层和空间层，以形成具有水平锥面积的上波导; 在第一包层的蚀刻部分，上波导层和上波导的空间层上生长第一电流阻挡层之后，在除电介质层之外的第一电流块层的暴露部分上生长第二电流阻挡层模式; 并且在去除介电层图案之后，在整个上表面上形成第二包层，并分别在第二包覆层和基板上形成电极。

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