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    • 1. 发明授权
    • Phase changeable structure and method of forming the same
    • 相变结构及其形成方法
    • US07569430B2
    • 2009-08-04
    • US11674580
    • 2007-02-13
    • Jun-Soo BaeHideki HoriiJi-Hye YiYoung-Soo Lim
    • Jun-Soo BaeHideki HoriiJi-Hye YiYoung-Soo Lim
    • H01L21/82
    • H01L45/1675H01L45/06H01L45/1233H01L45/144
    • The present invention relates to a phase changeable structure having decreased amounts of defects and a method of forming the phase changeable structure. A stacked composite is first formed by (i) forming a phase changeable layer including a chalcogenide is formed on a lower electrode, (ii) forming an etch stop layer having a first etch rate with respect to a first etching material including chlorine on the phase changeable layer, and (iii) forming a conductive layer having a second etch rate with respect to the first etching material on the etch stop layer. The conductive layer of the stacked composite is then etched using the first etching material to form an upper electrode. The etch stop layer and the phase changeable layer are then etched using a second etching material that is substantially flee of chlorine to form an etch stop pattern and a phase changeable pattern, respectively.
    • 本发明涉及具有减少的缺陷量的相变结构和形成相变结构的方法。 首先通过(i)在下电极上形成包括硫族化物的相变层来形成堆叠复合体,(ii)形成相对于在相上包括氯的第一蚀刻材料具有第一蚀刻速率的蚀刻停止层 可变层,和(iii)形成相对于蚀刻停止层上的第一蚀刻材料具有第二蚀刻速率的导电层。 然后使用第一蚀刻材料蚀刻层叠复合体的导电层以形成上电极。 然后使用基本上不含氯的第二蚀刻材料来蚀刻蚀刻停止层和相变层,以分别形成蚀刻停止图案和相变图案。