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1. 发明授权

US5880911A Magnetoresistive effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US5880911A
公开(公告)日：1999-03-09
申请号：US882229
申请日：1997-06-25
申请人： Kunihiko Ishihara , Hidefumi Yamamoto , Kazuhiko Hayashi , Jun-Ichi Fujikata
发明人： Kunihiko Ishihara , Hidefumi Yamamoto , Kazuhiko Hayashi , Jun-Ichi Fujikata
IPC分类号： G01R33/09 , G11B5/00 , G11B5/39 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3925 , H01L43/08 , G11B2005/0016 , G11B2005/3996 , G11B5/3932 , G11B5/399
摘要： The magnetoresistive effect element in accordance with the invention has several aspects. For instance, the magnetoresistive effect element includes an artificial lattice multilayered structure composed of a thin magnetic layer and a non-magnetic layer at least once successively deposited, and a bias field applying device for applying a bias magnetic field to the artificial lattice multilayered structure so that an orientation of residual magnetization of one of the thin magnetic layers having a greater coercive force than that of an adjacent thin magnetic layer, is the same as an orientation of a bias magnetic field to be applied to the artificial lattice multilayered structure. The magnetoresistive effect element provides enhanced regenerated outputs and also improves the symmetry of regenerated waveforms.
摘要翻译：根据本发明的磁阻效应元件具有若干方面。例如，磁阻效应元件包括由至少一次连续沉积的薄磁性层和非磁性层构成的人造晶格多层结构，以及用于向人造晶格多层结构施加偏置磁场的偏置场施加装置与相邻的薄磁性层相比，具有更大的矫顽力的薄磁性层之一的剩余磁化的取向与施加到人造晶格多层结构的偏置磁场的取向相同。磁阻效应元件提供增强的再生输出并且还提高再生波形的对称性。

2. 发明授权

US06063491A Magnetoresistance effects film 失效
标题翻译：磁阻效应胶片
公开(公告)号：US06063491A
公开(公告)日：2000-05-16
申请号：US38093
申请日：1998-03-11
申请人： Jun-Ichi Fujikata , Kazuhiko Hayashi , Hidefumi Yamamoto , Kunihiko Ishihara
发明人： Jun-Ichi Fujikata , Kazuhiko Hayashi , Hidefumi Yamamoto , Kunihiko Ishihara
IPC分类号： G01R33/09 , G11B5/39 , H01F10/08 , H01F10/18 , H01F10/28 , H01F10/32 , H01L43/08 , G11B5/66
CPC分类号： H01L43/08 , Y10S428/90 , Y10T428/1121 , Y10T428/26 , Y10T428/265
摘要： The invention provides a magnetoresistance effects film including (a) at least two thin magnetic films deposited on a substrate, (b) at least one thin nonmagnetic film interposed between the thin magnetic films, and (c) a thin antiferromagnetic film disposed adjacent to one of the thin magnetic films between which the thin nonmagnetic film is interposed. A bias magnetic field of one of the thin magnetic films induced by the thin antiferromagnetic film has an intensity Hr greater than a coercivity H.sub.C2 of the other of the thin magnetic films which is remote from the thin antiferromagnetic film (Hr>H.sub.C2). The thin antiferromagnetic film has a superlattice structure composed of at least two of NiO, Ni.sub.x Co.sub.1-x O(x=0.1-0.9) and CoO. A ratio of Ni relative to Co in the number of atoms in the superlattice structure is set equal to or greater than 1.0. The magnetoresistance effects film exhibits large linear change in resistance with the hysteresis being small even when a small external field is applied thereto.
摘要翻译：本发明提供了一种磁电阻效应膜，其包括（a）沉积在基板上的至少两个薄磁膜，（b）介于薄磁膜之间的至少一个薄非磁性膜，（c）与一个薄的反铁磁膜的薄磁性膜，薄的非磁性膜被插入其间。由薄的反铁磁膜引起的薄磁膜之一的偏磁场的强度Hr大于远离薄反铁磁膜（Hr> HC2）的另一个薄磁膜的矫顽力HC2。薄的反铁磁膜具有由NiO，NixCo1-xO（x = 0.1-0.9）和CoO中的至少两种构成的超晶格结构。超晶格结构中的原子数相对于Co的比例设定为1.0以上。即使施加小的外部场，磁阻效应膜也呈现大的电阻线性变化，滞后小。

3. 发明授权

US5766743A Magnetoresistance effect film, a method of manufacturing the same, and magnetoresistance effect device 失效
公开(公告)号：US5766743A
公开(公告)日：1998-06-16
申请号：US656921
申请日：1996-06-03
申请人： Jun-Ichi Fujikata , Kazuhiko Hayashi , Hidefumi Yamamoto , Kunihiko Ishihara , Masafumi Nakada
发明人： Jun-Ichi Fujikata , Kazuhiko Hayashi , Hidefumi Yamamoto , Kunihiko Ishihara , Masafumi Nakada
IPC分类号： G01R33/09 , G11B5/39 , H01F10/08 , H01F10/32 , H01F41/30 , G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , H01F10/3268 , H01F41/304 , Y10S428/90 , Y10T428/1121 , Y10T428/24942 , Y10T428/265 , Y10T428/31678
摘要： Magnetic thin films 2 and 3 are stacked on a substrate 4 with a nonmagnetic thin film 1 interposed therebetween. An antiferromagnetic thin film 5 is arranged adjacent to one magnetic thin film 3. The inequality Hc.sub.2

4. 发明授权

US6147843A Magnetoresistive effect element having magnetoresistive layer and underlying metal layer 失效
标题翻译：磁阻效应元件具有磁阻层和下面的金属层
公开(公告)号：US6147843A
公开(公告)日：2000-11-14
申请号：US788507
申请日：1997-01-24
申请人： Hidefumi Yamamoto , Kazuhiko Hayashi , Masafumi Nakada , Jun-Ichi Fujikata , Kunihiko Ishihara
发明人： Hidefumi Yamamoto , Kazuhiko Hayashi , Masafumi Nakada , Jun-Ichi Fujikata , Kunihiko Ishihara
IPC分类号： G01R33/09 , G11B5/39 , G11B5/40 , G11B5/455 , H01F10/08 , H01F10/16 , H01F10/32 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/09 , G11B5/3903 , H01F10/3268 , H01L43/08 , G11B2005/3996 , G11B5/3925 , G11B5/40 , G11B5/455
摘要： In a magnetoresistive element, an underlying metal layer is formed on a substrate, and a magnetoresistive layer is formed on the underlying metal layer. The underlying metal layer has a thickness of about 0.1 to 3.0 nm.
摘要翻译：在磁阻元件中，在基板上形成下面的金属层，并且在下面的金属层上形成磁阻层。底层金属层的厚度约为0.1〜3.0nm。

5. 发明授权

US5989690A Magnetoresistance effect film, a method of manufacturing the same, and magnetoresistance effect device 失效
标题翻译：磁阻效应膜，其制造方法和磁阻效应器件
公开(公告)号：US5989690A
公开(公告)日：1999-11-23
申请号：US45663
申请日：1998-03-20
申请人： Jun-Ichi Fujikata , Kazuhiko Hayashi , Hidefumi Yamamoto , Kunihiko Ishihara , Masafumi Nakada
发明人： Jun-Ichi Fujikata , Kazuhiko Hayashi , Hidefumi Yamamoto , Kunihiko Ishihara , Masafumi Nakada
IPC分类号： G01R33/09 , G11B5/39 , H01F10/08 , H01F10/32 , H01F41/30 , G11B5/66
CPC分类号： B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , H01F10/3268 , H01F41/304 , Y10S428/90 , Y10T428/1121 , Y10T428/24942 , Y10T428/265 , Y10T428/31678
摘要： Magnetic thin films 2 and 3 are stacked on a substrate 4 with a nonmagnetic thin film 1 interposed therebetween. An antiferromagnetic thin film 5 is arranged adjacent to one magnetic thin film 3. The inequality Hc.sub.2
摘要翻译：磁性薄膜2和3在介质之间以非磁性薄膜1层叠在基板4上。反铁磁性薄膜5与一个磁性薄膜3相邻配置。在反铁磁性薄膜5的偏置磁场Hr与另一磁性薄膜2的矫顽力Hc2之间，满足不等式Hc2

6. 发明授权

US06542342B1 Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer 有权
标题翻译：磁阻效应传感器具有直接连接到自由层的纵向偏置层
公开(公告)号：US06542342B1
公开(公告)日：2003-04-01
申请号：US09449475
申请日：1999-11-29
申请人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Tsutomu Ishi , Hiroaki Honjou , Kunihiko Ishihara , Jun-Ichi Fujikata , Hisao Matsutera , Hisanao Tsuge , Atsushi Kamijo
发明人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Tsutomu Ishi , Hiroaki Honjou , Kunihiko Ishihara , Jun-Ichi Fujikata , Hisao Matsutera , Hisanao Tsuge , Atsushi Kamijo
IPC分类号： G11B539
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/00 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967
摘要： In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the free layer, thus biasing a magnetization direction of the free layer so that the magnetization direction of the free layer coincides with that of the longitudinal bias layer.
摘要翻译：在包括插入层和自由层之间的钉扎层，钉扎层，自由层和非磁性层的磁阻效应传感器中，纵向偏置层直接连接到自由层的一部分以施加偏置磁场到自由层，从而偏置自由层的磁化方向，使得自由层的磁化方向与纵向偏置层的磁化方向一致。

7. 发明授权

US07372673B2 Magnetoresistive effect transducer having longitudinal bias layer and control layer directly connected to free layer 有权
标题翻译：具有纵向偏置层和控制层的磁阻效应传感器直接连接到自由层
公开(公告)号：US07372673B2
公开(公告)日：2008-05-13
申请号：US11139680
申请日：2005-05-31
申请人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Tsutomu Ishi , Hiroaki Honjou , Kunihiko Ishihara , Jun-Ichi Fujikata , Hisao Matsutera , Hisanao Tsuge , Atsushi Kamijo
发明人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Tsutomu Ishi , Hiroaki Honjou , Kunihiko Ishihara , Jun-Ichi Fujikata , Hisao Matsutera , Hisanao Tsuge , Atsushi Kamijo
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/00 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967
摘要： In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the free layer, thus biasing a magnetization direction of the free layer so that the magnetization direction of the free layer coincides with that of the longitudinal bias layer.
摘要翻译：在包括插入层和自由层之间的钉扎层，钉扎层，自由层和非磁性层的磁阻效应传感器中，纵向偏置层直接连接到自由层的一部分以施加偏置磁场到自由层，从而偏置自由层的磁化方向，使得自由层的磁化方向与纵向偏置层的磁化方向一致。

8. 发明授权

US06950290B2 Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer 失效
标题翻译：磁阻效应传感器具有直接连接到自由层的纵向偏置层
公开(公告)号：US06950290B2
公开(公告)日：2005-09-27
申请号：US10241520
申请日：2002-09-12
申请人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Tsutomu Ishi , Hiroaki Honjou , Kunihiko Ishihara , Jun-Ichi Fujikata , Hisao Matsutera , Hisanao Tsuge , Atsushi Kamijo
发明人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Tsutomu Ishi , Hiroaki Honjou , Kunihiko Ishihara , Jun-Ichi Fujikata , Hisao Matsutera , Hisanao Tsuge , Atsushi Kamijo
IPC分类号： G01R33/09 , G11B5/00 , G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/00 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967
摘要： In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the free layer, thus biasing a magnetization direction of the free layer so that the magnetization direction of the free layer coincides with that of the longitudinal bias layer.
摘要翻译：在包括插入层和自由层之间的钉扎层，钉扎层，自由层和非磁性层的磁阻效应传感器中，纵向偏置层直接连接到自由层的一部分以施加偏置磁场到自由层，从而偏置自由层的磁化方向，使得自由层的磁化方向与纵向偏置层的磁化方向一致。

9. 发明申请

US20050219772A1 Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer 有权
公开(公告)号：US20050219772A1
公开(公告)日：2005-10-06
申请号：US11139680
申请日：2005-05-31
申请人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Tsutomu Ishi , Hiroaki Honjou , Kunihiko Ishihara , Jun-Ichi Fujikata , Hisao Matsutera , Hisanao Tsuge , Atsushi Kamijo
发明人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Tsutomu Ishi , Hiroaki Honjou , Kunihiko Ishihara , Jun-Ichi Fujikata , Hisao Matsutera , Hisanao Tsuge , Atsushi Kamijo
IPC分类号： G01R33/09 , G11B5/00 , G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/00 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967
摘要： In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the free layer, thus biasing a magnetization direction of the free layer so that the magnetization direction of the free layer coincides with that of the longitudinal bias layer.

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