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1. 发明申请

US20100214712A1 METHOD FOR CHARGE-NEUTRALIZING TARGET SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：用于充电中和目标基板和基板处理装置的方法
公开(公告)号：US20100214712A1
公开(公告)日：2010-08-26
申请号：US12710816
申请日：2010-02-23
申请人： Jun YAMAWAKU , Junji Oikawa , Hiroyuki Nakayama
发明人： Jun YAMAWAKU , Junji Oikawa , Hiroyuki Nakayama
IPC分类号： H05F3/04
CPC分类号： H01L21/6833
摘要： A substrate processing apparatus includes a chamber; and a mounting table having an electrostatic attraction portion for electrostatically attracting a target substrate; a heat transfer gas supply system for injecting a heat transfer gas from the electrostatic attraction portion to the target substrate; and a separating unit by which the target substrate is separated from the electrostatic attraction portion. A method for charge-neutralizing a target substrate in the apparatus includes: supplying an ionized gas from the heat transfer gas supply system to the target substrate. The apparatus includes an irradiation unit for irradiating a soft X-ray or an UV beam toward the chamber. In the supplying of the ionized gas, the target substrate is separated from the electrostatic attraction portion by the separating unit, and a soft X-ray or an UV beam is irradiated from the irradiation unit toward a space between the target substrate and the electrostatic attraction portion.
摘要翻译：衬底处理设备包括：腔室; 以及具有用于静电吸引目标基板的静电吸引部的安装台; 用于将传热气体从静电吸引部分喷射到目标基板的传热气体供给系统; 以及分离单元，目标基板通过该分离单元与静电吸引部分分离。一种用于对设备中的目标衬底进行电荷中和的方法包括：将来自传热气体供应系统的电离气体供应到目标衬底。该装置包括用于向腔室照射软X射线或UV光束的照射单元。在供给电离气体时，目标基板通过分离单元与静电吸引部分分离，并且从照射单元向目标基板和静电引力之间的空间照射软X射线或UV光束一部分。

2. 发明申请

US20100202093A1 TRANSFER CHAMBER AND METHOD FOR PREVENTING ADHESION OF PARTICLE 有权
标题翻译：转移室和防止颗粒粘结的方法
公开(公告)号：US20100202093A1
公开(公告)日：2010-08-12
申请号：US12700771
申请日：2010-02-05
申请人： Jun YAMAWAKU , Junji Oikawa , Hiroyuki Nakayama
发明人： Jun YAMAWAKU , Junji Oikawa , Hiroyuki Nakayama
IPC分类号： H01L21/673 , H01L21/677 , H05F3/00
CPC分类号： H01L21/67184 , H01L21/67069 , H01L21/67196 , H01L21/67201 , H01L21/67213 , H01L21/67742 , H01L21/6831
摘要： A transfer chamber is provided between a processing unit for performing a predetermined process on a target substrate to be processed in a depressurized environment and an atmospheric maintaining unit for maintaining the target substrate in an atmospheric environment to transfer the target substrate therebetween. The transfer chamber includes a chamber main body for accommodating the target substrate, a gas exhaust unit for exhausting the chamber main body to set the chamber main body to the depressurized environment, and a gas supply unit for supplying a predetermined gas to the chamber main body to set the chamber main body in the atmospheric environment. Further, in the transfer chamber, an ionization unit is provided outside the chamber main body, for ionizing the predetermined gas and an ionized gas supply unit is provided to supply the ionized gas generated by the ionization unit to the chamber main body.
摘要翻译：传送室设置在用于在减压环境中对要处理的目标基板进行预定处理的处理单元和用于将目标基板保持在大气环境中以在其间传送目标基板的大气保持单元。传送室包括用于容纳目标基板的室主体，用于排出室主体以将室主体设置到减压环境的排气单元，以及用于将预定气体供应到室主体的气体供应单元将室主体设置在大气环境中。此外，在传送室中，离子化单元设置在室主体的外部，用于电离所述预定气体，并且提供电离气体供应单元以将由离子化单元产生的电离气体供应到室主体。

3. 发明申请

US20120247954A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20120247954A1
公开(公告)日：2012-10-04
申请号：US13432623
申请日：2012-03-28
申请人： Jun YAMAWAKU , Chishio KOSHIMIZU
发明人： Jun YAMAWAKU , Chishio KOSHIMIZU
IPC分类号： C23F4/00
CPC分类号： H01J37/32091 , H01J37/32642 , H01J37/32715
摘要： Disclosed is a capacitively-coupled plasma etching apparatus, in which a focus ring is provided surrounding a substrate placing area of a placing table for adjusting a state of plasma. A ring type insulating member is installed along the focus ring between the top surface of the placing table and the bottom surface of the focus ring, and a heat transfer member is installed between the top surface of the placing table and the bottom surface of the focus ring to be closely attached to the top surface and the bottom surface at a position adjacent to the insulating member in a diameter direction of a wafer. During the plasma processing, the heat in the focus ring is transferred to the placing table through the heat transfer member to be cooled down and the amount of sediment attached to the rear surface of the wafer can be reduced.
摘要翻译：公开了一种电容耦合等离子体蚀刻装置，其中围绕用于调节等离子体状态的放置台的基板放置区域设置聚焦环。环形绝缘构件沿着聚焦环安装在放置台的顶表面和聚焦环的底表面之间，传热构件安装在放置台的顶表面和焦点的底表面之间环在晶片的直径方向上在与绝缘构件相邻的位置处紧密附着到顶表面和底表面。在等离子体处理期间，聚焦环中的热量通过传热构件传递到放置台以被冷却，并且可以减少附着到晶片的后表面的沉积物的量。

4. 发明申请

US20120175063A1 SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工设备
公开(公告)号：US20120175063A1
公开(公告)日：2012-07-12
申请号：US13344267
申请日：2012-01-05
申请人： Jun YAMAWAKU , Chishio KOSHIMIZU
发明人： Jun YAMAWAKU , Chishio KOSHIMIZU
IPC分类号： H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32477 , H01J37/32559 , H01J37/32642 , H01L21/68735
摘要： A substrate processing apparatus capable of removing deposits attached on a component of a lower temperature in a gap between two components, temperatures of which are greatly different from each other, without degrading a working ratio of the substrate processing apparatus. In the substrate processing apparatus, a chamber receives a wafer, a focus ring surrounds the wafer disposed in the chamber, a side surface protective member transmits a laser beam, a laser beam irradiating apparatus irradiates the laser beam to the side surface protective member, an inner focus ring of the focus ring is disposed adjacent to the wafer and is cooled down and an outer focus ring surrounds the inner focus ring and is not cooled down in a focus ring, and a facing surface of the side surface protective member faces a gap between the inner focus ring and the outer focus ring.
摘要翻译：一种基板处理装置，其能够在不降低基板处理装置的加工率的情况下，除去附着在两个部件之间的间隙中的两个部件之间的间隙附近的沉积物，温度彼此大不相同。在基板处理装置中，室接收晶片，聚焦环围绕设置在室中的晶片，侧面保护构件透射激光束，激光束照射装置将激光束照射到侧面保护构件，聚焦环的内聚焦环与晶片相邻地设置并被冷却，并且外聚焦环围绕内聚焦环，并且在聚焦环中不被冷却，并且侧表面保护构件的面对表面在内聚焦环和外聚焦环之间。

5. 发明申请

US20120062870A1 PHYSICAL STATE MEASURING APPARATUS AND PHYSICAL STATE MEASURING METHOD 审中-公开
标题翻译：物理状态测量装置和物理状态测量方法
公开(公告)号：US20120062870A1
公开(公告)日：2012-03-15
申请号：US13231037
申请日：2011-09-13
申请人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO , Kenji NAGAI
发明人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO , Kenji NAGAI
IPC分类号： G01B9/02
CPC分类号： G01K11/125 , G01B9/02007 , G01B9/02021 , G01B9/02025 , G01B9/0209
摘要： The physical state measuring apparatus includes: a light source; a transmitting unit which transmits a light from the light source to a measurement point of an object to be measured; a nonlinear optical device which changes a wavelength of the light reflected by the measurement point to a wavelength that is different from the wavelength before the changing; a light receiving unit which receives the light whose wavelength has been changed; and a measuring unit which measures a physical state of the object to be measured at the measurement point based on a waveform of the light received by the light receiving unit.
摘要翻译：物理状态测量装置包括：光源; 发送单元，其将来自所述光源的光发送到待测量对象的测量点; 将由测量点反射的光的波长改变为与变化前的波长不同的波长的非线性光学装置; 接收波长已经改变的光的光接收单元; 以及测量单元，其基于由所述光接收单元接收的光的波形来测量所述测量点处的被测量物体的物理状态。

6. 发明申请

US20120073781A1 TEMPERATURE CONTROL SYSTEM 有权
标题翻译：温度控制系统
公开(公告)号：US20120073781A1
公开(公告)日：2012-03-29
申请号：US13240274
申请日：2011-09-22
申请人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO , Kenji NAGAI
发明人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO , Kenji NAGAI
IPC分类号： B60H1/00
CPC分类号： H01L21/67248 , G01J9/02 , G01J2005/583
摘要： The temperature control system includes: a susceptor which allows an object to be processed to be held on a top surface thereof and includes a flow path, through which a temperature adjusting medium flows, formed therein; a temperature measuring unit which measures a temperature of the object to be processed held on the top surface of the susceptor; a first temperature adjusting unit which adjusts a temperature of the temperature adjusting medium flowing through the flow path; and a second temperature adjusting unit which is disposed between the susceptor and the first temperature adjusting unit, and adjusts a temperature of the temperature adjusting medium based on a result of the measurement of the temperature measuring unit.
摘要翻译：温度控制系统包括：一个允许被处理物体被保持在其顶面上的基座，并且包括在其中形成温度调节介质流过的流路; 温度测量单元，其测量保持在所述基座的顶表面上的被处理物体的温度; 第一温度调节单元，其调节流过所述流路的温度调节介质的温度; 以及第二温度调节单元，其设置在所述基座和所述第一温度调节单元之间，并且基于所述温度测量单元的测量结果来调节所述温度调节介质的温度。

7. 发明申请

US20090028672A1 SUBSTRATE TRANSFER MODULE AND SUBSTRATE PROCESSING SYSTEM 有权
标题翻译：基板传输模块和基板处理系统
公开(公告)号：US20090028672A1
公开(公告)日：2009-01-29
申请号：US12180028
申请日：2008-07-25
申请人： Jun YAMAWAKU , Tsuyoshi Moriya
发明人： Jun YAMAWAKU , Tsuyoshi Moriya
IPC分类号： H01L21/67
CPC分类号： H01L21/67766 , H01L21/67778 , H01L21/67781
摘要： A substrate transfer module that can prevent corrosion of components, adhesion of particles to the substrate, and increases in the manufacturing cost and the size of the substrate transfer module. A substrate transfer module is connected to a substrate processing module. The substrate processing module implements desired processing on a substrate. A substrate transfer device transfers a substrate and includes a holding unit and a moving unit. The holding unit holds the substrate, and the moving unit moves the holding unit. A transfer chamber houses the substrate transfer device in an interior thereof that is isolated from an external atmosphere. An isolation device isolates at least the holding unit and the substrate held by the holding unit from an interior atmosphere of the transfer chamber.
摘要翻译：可以防止组分腐蚀，颗粒粘附到基底上的衬底转移模块，以及衬底转移模块的制造成本和尺寸的增加。衬底转移模块连接到衬底处理模块。衬底处理模块在衬底上实现所需的处理。衬底传送装置传送衬底并且包括保持单元和移动单元。保持单元保持基板，移动单元移动保持单元。传送室在其内部容纳与外部气氛隔离的衬底传送装置。隔离装置至少将保持单元和由保持单元保持的基板与传送室的内部空气隔离。

8. 发明申请

US20080273893A1 SUBSTRATE TRANSFER MEMBER CLEANING METHOD, SUBSTRATE TRANSFER APPARATUS, AND SUBSTRATE PROCESSING SYSTEM 审中-公开
标题翻译：基板传输部件清洁方法，基板传送装置和基板处理系统
公开(公告)号：US20080273893A1
公开(公告)日：2008-11-06
申请号：US12053211
申请日：2008-03-21
申请人： Jun YAMAWAKU , Tsuyoshi Moriya
发明人： Jun YAMAWAKU , Tsuyoshi Moriya
IPC分类号： G03G15/16
CPC分类号： H01L21/67028 , H01L21/67051 , H01L21/67742
摘要： A substrate transfer member cleaning method that enables foreign matter attached to a substrate transfer member to be completely removed without bringing about a decrease in the throughput. A cleaning agent containing a cleaning substance in two phases of a vapor phase and a liquid phase and a high-temperature gas is jetted toward the substrate transfer member that transfers a substrate.
摘要翻译：能够完全除去附着于基板转印部件的异物而不会降低生产量的基板转印部件清洗方法。将含有汽相和液相以及高温气体两相的清洗物质的清洗剂朝向转印基板的基板转印部件喷射。

9. 发明申请

US20080240910A1 TURBO-MOLECULAR PUMP, SUBSTRATE PROCESSING APPARATUS, AND METHOD FOR SUPPRESSING ATTACHMENT OF DEPOSITIONS TO TURBO-MOLECULAR PUMP 有权
标题翻译：涡轮分子泵，基板处理装置和用于抑制沉积物对涡轮分子泵的附着的方法
公开(公告)号：US20080240910A1
公开(公告)日：2008-10-02
申请号：US12057767
申请日：2008-03-28
申请人： Jun YAMAWAKU , Tsuyoshi Moriya
发明人： Jun YAMAWAKU , Tsuyoshi Moriya
IPC分类号： F01D25/00 , F01D25/22
CPC分类号： F04D19/042 , F04D29/701 , F05D2260/607 , Y02T50/675
摘要： A turbo-molecular pump that enables reliable suppression of attachment of depositions onto component parts thereof. The turbo-molecular pump discharges a deposition-causing gas from a processing chamber. A rotor has a rotor shaft aligned with an exhaust stream. A cylindrical casing houses the rotor therein. A plurality of blade-form rotor blades projects from the rotor orthogonally with respect to the rotor shaft and are divided into a plurality of rotor blade groups. A plurality of blade-form stator blades projects orthogonally with respect to the rotor shaft from a rotor-facing surface and are divided into a plurality of stator blade groups. Gas supply ports are located on an upstream side of the rotor blade group that is located furthest downstream in the exhaust stream, and supply a deposition-suppressing gas which includes gas molecules having a large molecular weight.
摘要翻译：涡轮分子泵，其能够可靠地抑制沉积物附着到其组分部分上。涡轮分子泵从处理室排出沉积物。转子具有与排气流对准的转子轴。圆柱形壳体将转子放在其中。多个叶片形转子叶片相对于转子轴正交地从转子突出并分成多个转子叶片组。多个叶片形定子叶片相对于转子轴从转子相对表面突出突出并被分成多个定子叶片组。气体供给口位于转子叶片组的位于排气流最下游的上游侧，并且供给包含分子量大的气体分子的沉积抑制气体。

10. 发明申请

US20120251759A1 COMPONENT IN PROCESSING CHAMBER OF SUBSTRATE PROCESSING APPARATUS AND METHOD OF MEASURING TEMPERATURE OF THE COMPONENT 有权
标题翻译：基板处理装置的加工室中的部件和测量部件温度的方法
公开(公告)号：US20120251759A1
公开(公告)日：2012-10-04
申请号：US13432617
申请日：2012-03-28
申请人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO
发明人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO
IPC分类号： B32B3/14 , G01K11/00 , B32B18/00 , B05C11/00 , B32B33/00
CPC分类号： G01K11/14 , G01K5/48 , H01L21/67248
摘要： A component in a processing chamber of a substrate processing apparatus, where a temperature may be accurately measured by using a temperature measuring apparatus using an interference of a low-coherence light, even when a front surface and a rear surface are not parallel due to abrasion, or the like. A focus ring used in a vacuum atmosphere and of which a temperature is measured includes an abrasive surface exposed to an abrasive atmosphere according to plasma, a nonabrasive surface not exposed to the abrasive atmosphere, a thin-walled portion including a top surface and a bottom surface that are parallel to each other, and a coating member coating the top surface of the thin-walled portion, wherein a mirror-like finishing is performed on each of the top and bottom surfaces of the thin-walled portion.
摘要翻译：在基板处理装置的处理室中的部件，其中即使当前表面和后表面由于磨损而不平行时，也可以通过使用具有低相干光干涉的温度测量装置来精确地测量温度，等等。在真空气氛中使用并且测量温度的聚焦环包括暴露于等离子体的研磨气氛的研磨表面，未暴露于研磨性气氛的非磨损表面，包括顶表面和底部的薄壁部分表面彼此平行;以及涂覆部件，其涂覆在薄壁部分的顶表面上，其中在薄壁部分的每个顶表面和底表面上执行镜像整理。

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