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    • 3. 发明授权
    • Bus frequency adjustment circuitry for use in a dynamic random access memory device
    • 用于动态随机存取存储器件的总线频率调节电路
    • US08458507B2
    • 2013-06-04
    • US12163663
    • 2008-06-27
    • Joe SalmonKuljit Bains
    • Joe SalmonKuljit Bains
    • G06F1/04G06F1/10G06F13/16
    • G06F1/10G06F1/06
    • A clock divider circuitry and method for use in a dynamic random access memory device. The method may include receiving a clock input signal having a first frequency from a clock input receiver at clock divider circuitry, the clock divider circuitry including a flip-flop configured to generate an output signal, based at least in part, on an inverted output signal and the clock input signal. The output signal may have a second frequency that is a fraction of the first frequency. The method may further include receiving the clock input signal and the output signal at a multiplexer and generating a multiplexed output. The method may additionally include receiving the multiplexed output at a first bus configured to receive the multiplexed output and to reduce an operational frequency of the first bus in response to an increase in an operational frequency of a second bus associated with the memory device.
    • 一种用于动态随机存取存储器件的时钟分频器电路和方法。 该方法可以包括:在时钟分频器电路处从时钟输入接收器接收具有第一频率的时钟输入信号,时钟分频器电路包括配置成产生输出信号的触发器,该触发器至少部分地基于反相输出信号 和时钟输入信号。 输出信号可以具有第二频率,其是第一频率的一部分。 该方法还可以包括在多路复用器处接收时钟输入信号和输出信号,并产生多路输出。 该方法可以另外包括:在被配置为接收多路复用输出的第一总线处接收多路复用输出并且响应于与存储器件相关联的第二总线的工作频率的增加而减小第一总线的工作频率。
    • 8. 发明申请
    • METHOD, APPARATUS AND SYSTEM FOR A PER-DRAM ADDRESSABILITY MODE
    • 方法,设备和系统,用于存储器可寻址模式
    • US20130346684A1
    • 2013-12-26
    • US13531368
    • 2012-06-22
    • Kuljit Bains
    • Kuljit Bains
    • G06F12/00
    • G11C7/1045G11C7/109G11C11/4096
    • Techniques and mechanisms for programming an operation mode of a dynamic random access memory (DRAM) device. In an embodiment, a memory controller stores a value in a mode register of a DRAM device, the value specifying whether a per-DRAM addressability (PDA) mode of the DRAM device is enabled. An external contact of the DRAM device is coupled to the memory controller device via a signal line of a data bus. In another embodiment, the memory controller sends a signal to the external contact while the PDA mode of the DRAM device is enabled, the signal to specify whether one or more features of the DRAM device are programmable.
    • 用于编程动态随机存取存储器(DRAM)设备的操作模式的技术和机制。 在一个实施例中,存储器控制器将值存储在DRAM器件的模式寄存器中,该值指定DRAM器件的每DRAM可寻址(PDA)模式是否被使能。 DRAM器件的外部触点经由数据总线的信号线耦合到存储器控制器装置。 在另一个实施例中,存储器控制器在DRAM器件的PDA模式被使能的同时向外部触点发送信号,该信号指定DRAM器件的一个或多个特征是否可编程。
    • 10. 发明申请
    • Multiported memory with configurable ports
    • 具有可配置端口的多端口存储器
    • US20070130374A1
    • 2007-06-07
    • US11280837
    • 2005-11-15
    • Kuljit BainsJohn HalbertRandy Osborne
    • Kuljit BainsJohn HalbertRandy Osborne
    • G06F3/00
    • G06F13/1694
    • In some embodiments, a chip includes memory banks and data ports, including at least first and second data ports, coupled to the memory banks. The chip also includes control circuitry to control a configuration of the first data port to be in one of multiple configurations in response to a configuration command, wherein the available configurations for the first data port include at least two of the following: whether the first data port (1) may only be used for read transactions, (2) may only be used for write transactions, or (3) may be used for either read or write transactions while in the configuration. Other embodiments are described.
    • 在一些实施例中,芯片包括耦合到存储体的存储器组和数据端口,包括至少第一和第二数据端口。 该芯片还包括控制电路,用于响应于配置命令将第一数据端口的配置控制为多个配置之一,其中第一数据端口的可用配置包括以下中的至少两个:第一数据 端口(1)只能用于读取事务,(2)只能用于写入事务,或者(3)可以在配置中用于读取或写入事务。 描述其他实施例。