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1. 发明授权

US6159385A Process for manufacture of micro electromechanical devices having high electrical isolation 失效
公开(公告)号：US6159385A
公开(公告)日：2000-12-12
申请号：US75008
申请日：1998-05-08
申请人： Jun J. Yao , Robert J. Anderson
发明人： Jun J. Yao , Robert J. Anderson
IPC分类号： B81C1/00 , B81B3/00 , H01L27/12 , H01P11/00 , B44C1/22 , C03C15/00 , C03C25/68 , H01L21/00
CPC分类号： B81C1/00484 , B81B2203/0118 , B81C2201/0108 , B81C2201/014 , B81C2201/019
摘要： The present invention relates to a fabrication process relating to a fabrication process for manufacture of micro-electromechanical (MEM) devices such as cantilever supported beams. This fabrication process requires only two lithographic masking steps and offers moveable electromechanical devices with high electrical isolation. A preferred embodiment of the process uses electrically insulating glass substrate as the carrier substrate and single crystal silicon as the MEM component material. The process further includes deposition of an optional layer of insulating material such as silicon dioxide on top of a layer of doped silicon grown on a silicon substrate. The silicon dioxide is epoxy bonded to the glass substrate to create a silicon--silicon dioxide-epoxy-glass structure. The silicon is patterned using anisotropic plasma dry etching techniques. A second patterning then follows to pattern the silicon dioxide layer and an oxygen plasma etch is performed to undercut the epoxy film and to release the silicon MEM component. This two-mask process provides single crystal silicon MEMs with electrically isolated MEM component. Retaining silicon dioxide insulating material in selected areas mechanically supports the MEM component.

2. 发明授权

US06617657B1 Process for manufacture of micro electromechanical devices having high electrical isolation 有权
标题翻译：具有高电绝缘性的微机电装置的制造方法
公开(公告)号：US06617657B1
公开(公告)日：2003-09-09
申请号：US09710326
申请日：2000-11-09
申请人： Jun J. Yao , Robert J. Anderson
发明人： Jun J. Yao , Robert J. Anderson
IPC分类号： H01L2982
CPC分类号： B81C1/00484 , B81B2203/0118 , B81C2201/0108 , B81C2201/014 , B81C2201/019
摘要： The present invention relates to a fabrication process relating to a fabrication process for manufacture of micro-electromechanical (MEM) devices such as cantilever supported beams. This fabrication process requires only two lithographic masking steps and offers moveable electromechanical devices with high electrical isolation. A preferred embodiment of the process uses electrically insulating glass substrate as the carrier substrate and single crystal silicon as the MEM component material. The process further includes deposition of an optional layer of insulating material such as silicon dioxide on top of a layer of doped silicon grown on a silicon substrate. The silicon dioxide is epoxy bonded to the glass substrate to create a silicon-silicon dioxide-epoxy-glass structure. The silicon is patterned using anisotropic plasma dry etching techniques. A second patterning then follows to pattern the silicon dioxide layer and an oxygen plasma etch is performed to undercut the epoxy film and to release the silicon MEM component. This two-mask process provides single crystal silicon MEMs with electrically isolated MEM component. Retaining silicon dioxide insulating material in selected areas mechanically supports the MEM component.
摘要翻译：本发明涉及涉及用于制造诸如悬臂支撑梁的微机电（MEM）装置的制造工艺的制造工艺。该制造工艺仅需要两个光刻掩模步骤，并提供具有高电绝缘性的可移动机电装置。该方法的优选实施方案使用电绝缘玻璃基材作为载体基材，将单晶硅用作MEM组分材料。该方法还包括在硅衬底上生长的掺杂硅层上沉积绝缘材料如二氧化硅的任选层。二氧化硅是环氧键合到玻璃基底上以产生硅 - 二氧化硅 - 环氧玻璃结构。使用各向异性等离子体干蚀刻技术将硅图案化。然后进行第二图案化以对二氧化硅层进行图案化，并且执行氧等离子体蚀刻以切割环氧树脂膜并释放硅MEM组分。该双掩模工艺提供具有电隔离的MEM组分的单晶硅MEM。在选定区域保持二氧化硅绝缘材料机械地支撑MEM部件。

3. 发明授权

US5872489A Integrated tunable inductance network and method 失效
标题翻译：集成可调谐电感网络及方法
公开(公告)号：US5872489A
公开(公告)日：1999-02-16
申请号：US848137
申请日：1997-04-28
申请人： Mau Chung F. Chang , Henry O. Marcy, 5th , Deepak Mehrotra , Kenneth D. Pedrotti , David R. Pehlke , Charles W. Seabury , Jun J. Yao , James L. Bartlett , J. L. Julian Tham
发明人： Mau Chung F. Chang , Henry O. Marcy, 5th , Deepak Mehrotra , Kenneth D. Pedrotti , David R. Pehlke , Charles W. Seabury , Jun J. Yao , James L. Bartlett , J. L. Julian Tham
IPC分类号： B81C3/00 , H01H59/00 , H01L27/06 , H03B1/00 , H03B5/12 , H03F1/26 , H03F1/56 , H03B5/08 , H03F3/04 , H03J5/24
CPC分类号： H03F1/565 , H01L27/0611 , H03B5/1256 , H03F1/26 , H03F3/195 , H01H59/0009 , H03B2201/012 , H03B2201/0208 , H03B2201/0216 , H03B2201/025 , H03F2200/294 , H03F2200/372 , H03J2200/10 , H03J2200/15
摘要： An integrated, tunable inductance network features a number of fixed inductors fabricated on a common substrate along with a switching network made up of a number of micro-electromechanical (MEM) switches. The switches selectably interconnect the inductors to form an inductance network having a particular inductance value, which can be set with a high degree of precision when the inductors are configured appropriately. The preferred MEM switches introduce a very small amount of resistance, and the inductance network can thus have a high Q. The MEM switches and inductors can be integrated using common processing steps, reducing parasitic capacitance problems associated with wire bonds and prior art switches, increasing reliability, and reducing the space, weight and power requirements of prior art designs. The precisely tunable high-Q inductance network has wide applicability, such as in a resonant circuit which provides a narrow bandwidth frequency response which peaks at a specific predetermined frequency, making possible a highly selective performance low noise amplifier (LNA), or in an oscillator circuit so that a precise frequency of oscillation can be generated and changed as needed.
摘要翻译：集成的可调电感网络具有在由公共基板上制造的多个固定电感器以及由多个微机电（MEM）开关组成的开关网络。开关可选地互连电感器以形成具有特定电感值的电感网络，当电感器被适当地配置时，可以以高精度设置电感网络。优选的MEM开关引入非常少量的电阻，因此电感网络可以具有高Q.MEM开关和电感器可以使用常规的处理步骤进行集成，减少与引线键合和现有技术开关相关联的寄生电容问题，增加可靠性，并减少现有技术设计的空间，重量和功率要求。精确可调谐的高Q电感网络具有广泛的适用性，例如在谐振电路中，其提供以特定预定频率峰值的窄带宽频率响应，使高选择性性能低噪声放大器（LNA）或振荡器使得可以根据需要产生和改变振荡的精确频率。

4. 发明授权

US5449903A Methods of fabricating integrated, aligned tunneling tip pairs 失效
标题翻译：制造集成的对准的隧道尖端对的方法
公开(公告)号：US5449903A
公开(公告)日：1995-09-12
申请号：US76906
申请日：1993-06-15
申请人： Susanne C. Arney , Noel C. MacDonald , Jun J. Yao
发明人： Susanne C. Arney , Noel C. MacDonald , Jun J. Yao
IPC分类号： G01B7/34 , B81B1/00 , B81B3/00 , G01B7/00 , G01N37/00 , G01Q20/04 , G01Q60/16 , G01Q70/12 , G01Q70/14 , H01J37/28 , H02N1/00 , G21K5/10
CPC分类号： H02N1/008 , B82Y35/00 , G01Q20/04 , G01Q60/16 , Y10S977/874
摘要： Self-aligned, opposed, nanometer dimension tips are fabricated in pairs, one of each pair being located on a movable, single crystal beam, with the beam being movable in three dimensions with respect to a substrate carrying the other tip of a pair. Motion of one tip with respect to the other is controlled or sensed by transducers formed on the supporting beams. Spring means in each beam allow axial motion of the beam. The tips and beams are fabricated from single crystal silicon substrate, and the tips may be electrically isolated from the substrate by fabricating insulating segments in the beam structure.
摘要翻译：自对准的，相对的，纳米尺寸的尖端成对制造，每对中的一个位于可移动的单晶束上，其中光束可相对于承载一对的另一个尖端的基板在三维空间中移动。一个尖端相对于另一个尖端的运动由形成在支撑梁上的换能器控制或感测。每个梁中的弹簧装置允许梁的轴向运动。尖端和光束由单晶硅衬底制成，并且尖端可以通过在梁结构中制造绝缘段而与衬底电隔离。

5. 发明授权

US5287082A Submicron isolated, released resistor structure 失效
标题翻译：亚微米隔离，释放电阻结构
公开(公告)号：US5287082A
公开(公告)日：1994-02-15
申请号：US906877
申请日：1992-07-02
申请人： Susanne C. Arney , Noel C. MacDonald , Jun J. Yao
发明人： Susanne C. Arney , Noel C. MacDonald , Jun J. Yao
IPC分类号： H01L21/02 , H01C1/012
CPC分类号： H01L28/20
摘要： A submicron resistor having negligible parasitic capacitance includes an isolated released beam carried on a single crystal silicon wafer. The resistor is fabricated by defining a resistor region in the substrate, doping the region to produce the desired resistivity, and etching around the region to produce a resistive island. The island is then isolated from the substrate by oxidation, and is released by removing the oxide to produce an isolated, released resistor beam.
摘要翻译：具有可忽略的寄生电容（40），（42），（44）的亚微米电阻器包括承载在单晶硅晶片上的隔离放电光束（20）。通过在衬底（24）中限定电阻器区域，掺杂该区域以产生期望的电阻率，以及围绕该区域蚀刻以产生电阻岛，来制造电阻器。然后通过氧化将岛与基底隔离，并通过去除氧化物来产生隔离的释放的束（20）。

6. 发明授权

US5179499A Multi-dimensional precision micro-actuator 失效
标题翻译：多维精密微致动器
公开(公告)号：US5179499A
公开(公告)日：1993-01-12
申请号：US868102
申请日：1992-04-14
申请人： Noel C. MacDonald , Jun J. Yao
发明人： Noel C. MacDonald , Jun J. Yao
IPC分类号： B81C1/00 , G01Q60/16 , H01H1/00 , H01H59/00 , H02N1/00
CPC分类号： H02N1/008 , B82Y35/00 , G01Q10/04 , H01H1/0094 , H01H2001/0068 , H01H2001/0078
摘要： Mechanically movable microstructure fabricated from a single crystal such as silicon and actuator structures for providing a high degree of controlled, precision motion of nanometer-scale.
摘要翻译：由诸如硅和致动器结构的单晶制造的机械可移动微结构，用于提供纳米级的高度受控精密运动。

7. 发明授权

US06417743B1 Micro electromechanical isolator 有权
标题翻译：微机电隔离器
公开(公告)号：US06417743B1
公开(公告)日：2002-07-09
申请号：US09400125
申请日：1999-09-21
申请人： Robert E. Mihailovich , Jun J. Yao
发明人： Robert E. Mihailovich , Jun J. Yao
IPC分类号： H03H900
CPC分类号： H03H9/462
摘要： The present invention relates to a micro electromechanical (MEM) isolator in which an input signal induces an output signal by means of electrically insulating mechanical motion. The MEM isolator device comprises a dielectric moveable platform suspended above a substrate by flexible beams. A drive and a control capacitor each have one electrode supported by the platform and one electrode supported by the substrate. Coupling between electrical and mechanical energies is achieved by providing an input signal to the drive capacitor to induce platform motion. When the input signal is fed to the drive capacitor, it actuates electrostatic motion of the platform resulting in a change in the value of the control capacitance. The change in the control capacitance is converted via a simple electronics circuit into an output that mirrors the input but is electrically isolated therefrom. The advantages of such a device include simple electrical isolation provided by the dielectric platform, built in signal-debounce inherent to the structure mechanics, and economical integration with silicon integrated circuits.
摘要翻译：本发明涉及一种微机电（MEM）隔离器，其中输入信号通过电绝缘的机械运动来感应输出信号。 MEM隔离器装置包括通过柔性梁悬挂在衬底上的介电可移动平台。驱动器和控制电容器各自具有由平台支撑的一个电极和由基板支撑的一个电极。通过向驱动电容器提供输入信号以引起平台运动来实现电和机械能之间的耦合。当输入信号被馈送到驱动电容器时，它致动平台的静电运动，导致控制电容值的变化。控制电容的变化通过简单的电子电路转换成反映输入的输出，但与之电隔离。这种器件的优点包括由介电平台提供的简单的电隔离，内置于结构力学固有的信号去抖动，以及与硅集成电路的经济集成。

8. 发明授权

US6094102A Frequency synthesizer using micro electro mechanical systems (MEMS) technology and method 有权
标题翻译：频率合成器采用微机电系统（MEMS）技术和方法
公开(公告)号：US6094102A
公开(公告)日：2000-07-25
申请号：US302535
申请日：1999-04-30
申请人： Mau Chung F. Chang , Henry O. Marcy, 5th , Kenneth D. Pedrotti , David R. Pehlke , Charles W. Seabury , Jun J. Yao , James L. Bartlett , J. L. Julian Tham , Deepak Mehrotra
发明人： Mau Chung F. Chang , Henry O. Marcy, 5th , Kenneth D. Pedrotti , David R. Pehlke , Charles W. Seabury , Jun J. Yao , James L. Bartlett , J. L. Julian Tham , Deepak Mehrotra
IPC分类号： B81B3/00 , H03L7/089 , H03L7/093 , H03L7/107 , H03L7/18 , H03D3/00
CPC分类号： H03L7/107 , H03L7/0891 , H03L7/093 , H03L7/18
摘要： A frequency stabilizer circuit in the form of a charge-pump phase-lock loop utilizing a MEMS capacitance device, preferably a tunable MEMS capacitor or a MEMS capacitor bank, which more rapid and with a greater precision determine the phase and frequency of a carrier signal so that it can be extracted, providing an information signal of interest. Such MEMS devices have the added advantage of providing linear capacitance, low insertion losses, higher isolation and high reliability, they run on low power and permit the entire circuit to be fabricated on a common substrate. The use of the MEMS capacitance device reduces unwanted harmonics generated by the circuit's charge pump allowing the filtering requirements to be relaxed or perhaps eliminated.
摘要翻译：采用MEMS电容器件，优选可调MEMS电容器或MEMS电容器组的电荷泵锁相环形式的频率稳定器电路，其更快速且更精确地确定载波信号的相位和频率从而可以提取它，从而提供感兴趣的信息信号。这样的MEMS器件具有提供线性电容，低插入损耗，更高隔离度和高可靠性的附加优点，它们以低功率运行，并允许整个电路在公共衬底上制造。使用MEMS电容器件减少了由电路的电荷泵产生的不需要的谐波，从而可以放宽或可能消除滤波要求。

9. 发明授权

US5880921A Monolithically integrated switched capacitor bank using micro electro mechanical system (MEMS) technology 失效
标题翻译：使用微机电系统（MEMS）技术的单片集成开关电容器组
公开(公告)号：US5880921A
公开(公告)日：1999-03-09
申请号：US848116
申请日：1997-04-28
申请人： J.L. Julian Tham , James L. Bartlett , Mau Chung F. Chang , Henry O. Marcy, 5th , Deepak Mehrotra , Kenneth D. Pedrotti , David R. Pehlke , Charles W. Seabury , Jun J. Yao
发明人： J.L. Julian Tham , James L. Bartlett , Mau Chung F. Chang , Henry O. Marcy, 5th , Deepak Mehrotra , Kenneth D. Pedrotti , David R. Pehlke , Charles W. Seabury , Jun J. Yao
IPC分类号： H01H59/00 , H03B1/00 , H01G23/00
CPC分类号： H01H59/0009 , H01G5/16 , H01H2001/0084 , H03B2201/0208 , H03B2201/0216 , H03B2201/025 , H03J2200/10
摘要： A monolithically integrated switched capacitor bank using MEMS technology that is capable of handling GHz signal frequencies in both the RF and millimeter bands while maintaining precise digital selection of capacitor levels over a wide tuning range. Each MEMS switch includes a cantilever arm that is affixed to the substrate and extends over a ground line and a gapped signal line. An electrical contact is formed on the bottom of the cantilever arm positioned above and facing the gap in the signal line. A top electrode atop the cantilever arm forms a control capacitor structure above the ground line. A capacitor structure, preferably a MEMS capacitor suspended above the substrate at approximately the same height as the cantilever arm, is anchored to the substrate and connected in series with a MEMS switch. The MEMS switch is actuated by applying a voltage to the top electrode, which produces an electrostatic force that attracts the control capacitor structure toward the ground line, thereby causing the electrical contact to close the gap in the signal line and connect the MEMS capacitor structure between a pair of output terminals. The integrated MEMS switch-capacitor pairs have a large range between their on-state and off-state impedance, and thus exhibit superior isolation and insertion loss characteristics.
摘要翻译：使用MEMS技术的单片集成开关电容器组，其能够处理RF和毫米波段中的GHz信号频率，同时在宽调谐范围内保持电容器电平的精确数字选择。每个MEMS开关包括悬臂，其固定在基板上并在接地线和间隙信号线上延伸。在位于信号线上方并面向信号线的间隙的悬臂的底部上形成电接触。在悬臂上方的顶部电极在地线上方形成控制电容器结构。电容器结构，优选地悬置在基板上方的悬臂上方与悬臂大致相同高度的MEMS电容器被锚定到基板并与MEMS开关串联连接。通过向顶部电极施加电压来致动MEMS开关，该电压产生吸引控制电容器结构朝向接地线的静电力，从而使电接触闭合信号线中的间隙，并将MEMS电容器结构一对输出端子。集成的MEMS开关电容器对在其导通状态和截止状态阻抗之间具有较大的范围，因此表现出优异的隔离和插入损耗特性。

10. 发明授权

US5578976A Micro electromechanical RF switch 失效
标题翻译：微机电RF开关
公开(公告)号：US5578976A
公开(公告)日：1996-11-26
申请号：US493445
申请日：1995-06-22
申请人： Jun J. Yao
发明人： Jun J. Yao
IPC分类号： H01H1/20 , H01H59/00 , H01P1/10 , H01H57/00
CPC分类号： H01H59/0009 , H01H1/20
摘要： A micro electromechanical RF switch is fabricated on a substrate using a suspended microbeam as a cantilevered actuator arm. From an anchor structure, the cantilever arm extends over a ground line and a gapped signal line that comprise microstrips on the substrate. A metal contact formed on the bottom of the cantilever arm remote from the anchor is positioned facing the signal line gap. An electrode atop the cantilever arm forms a capacitor structure above the ground line. The capacitor structure may include a grid of holes extending through the top electrode and cantilever arm to reduce structural mass and the squeeze damping effect during switch actuation. The switch is actuated by application of a voltage on the top electrode, which causes electrostatic forces to attract the capacitor structure toward the ground line so that the metal contact closes the gap in the signal line. The switch functions from DC to at least 4 GHz with an electrical isolation of -50 dB and an insertion loss of 0.1 dB at 4 GHz. A low temperature fabrication process allows the switch to be monolithically integrated with microwave and millimeter wave integrated circuits (MMICs). The RF switch has applications in telecommunications, including signal routing for microwave and millimeter wave IC designs, MEMS impedance matching networks, and band-switched tunable filters for frequency-agile communications.
摘要翻译：使用悬臂微束作为悬臂式致动器臂，在基板上制造微机电RF开关。从锚结构中，悬臂在地线和覆盖信号线上延伸，该信号线在衬底上包括微带。形成在远离锚固件的悬臂的底部上的金属接触件被定位成面对信号线间隙。悬臂上方的电极在地线上方形成电容器结构。电容器结构可以包括延伸穿过顶部电极和悬臂的孔格栅，以减少开关致动期间的结构质量和挤压阻尼效应。通过在顶部电极上施加电压来致动开关，这导致静电力将电容器结构吸引到接地线，使得金属触点闭合信号线中的间隙。该开关从DC到至少4 GHz，电隔离为-50 dB，在4 GHz时插入损耗为0.1 dB。低温制造工艺允许开关与微波和毫米波集成电路（MMIC）单片集成。 RF开关具有电信应用，包括用于微波和毫米波IC设计的信号路由，MEMS阻抗匹配网络和用于频率敏捷通信的带通可调谐滤波器。

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