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1. 发明授权

US08338078B2 Photoresist undercoat-forming material and patterning process 有权
标题翻译：光刻胶底涂层成型材料和图案化工艺
公开(公告)号：US08338078B2
公开(公告)日：2012-12-25
申请号：US12581625
申请日：2009-10-19
申请人： Jun Hatakeyama , Toshihiko Fujii , Takeru Watanabe , Youichi Ohsawa
发明人： Jun Hatakeyama , Toshihiko Fujii , Takeru Watanabe , Youichi Ohsawa
IPC分类号： G03F7/09 , G03F7/20 , G03F7/30 , G03F7/36 , G03C1/76
CPC分类号： G03F7/091 , C08G61/02 , C09D161/04 , G03F7/40
摘要： A material comprising a novolac resin having a C6-C30 aromatic hydrocarbon group substituted with a sulfo group or an amine salt thereof is useful in forming a photoresist undercoat. The undercoat-forming material has an extinction coefficient sufficient to provide an antireflective effect at a thickness of at least 200 nm, and a high etching resistance as demonstrated by slow etching rates with CF4/CHF3 gas for substrate processing.
摘要翻译：包含具有被磺基取代的C6-C30芳族烃基的酚醛清漆树脂或其胺盐的材料可用于形成光致抗蚀剂底涂层。底涂层材料的消光系数足以在至少200nm的厚度下提供抗反射效果，并且具有高的耐蚀刻性，如通过用于基板处理的CF 4 / CHF 3气体的缓慢蚀刻速率所证明的。

2. 发明申请

US20100104977A1 PHOTORESIST UNDERCOAT-FORMING MATERIAL AND PATTERNING PROCESS 有权
标题翻译：光电材料成型材料和图案处理工艺
公开(公告)号：US20100104977A1
公开(公告)日：2010-04-29
申请号：US12581625
申请日：2009-10-19
申请人： Jun Hatakeyama , Toshihiko Fujii , Takeru Watanabe , Youichi Ohsawa
发明人： Jun Hatakeyama , Toshihiko Fujii , Takeru Watanabe , Youichi Ohsawa
IPC分类号： G03F7/20 , C08G75/18 , C08L81/00 , G03F7/004
CPC分类号： G03F7/091 , C08G61/02 , C09D161/04 , G03F7/40
摘要： A material comprising a novolac resin having a C6-C30 aromatic hydrocarbon group substituted with a sulfo group or an amine salt thereof is useful in forming a photoresist undercoat. The undercoat-forming material has an extinction coefficient sufficient to provide an antireflective effect at a thickness of at least 200 nm, and a high etching resistance as demonstrated by slow etching rates with CF4/CHF3 gas for substrate processing.
摘要翻译：包含具有被磺基取代的C6-C30芳族烃基的酚醛清漆树脂或其胺盐的材料可用于形成光致抗蚀剂底涂层。底涂层材料的消光系数足以在至少200nm的厚度下提供抗反射效果，并且具有高的耐蚀刻性，如通过用于基板处理的CF 4 / CHF 3气体的缓慢蚀刻速率所证明的。

3. 发明授权

US07871761B2 Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern 有权
标题翻译：抵抗下层材料，抗蚀剂包含该材料的下层基材和形成图案的方法
公开(公告)号：US07871761B2
公开(公告)日：2011-01-18
申请号：US11881761
申请日：2007-07-27
申请人： Jun Hatakeyama , Toshihiko Fujii , Youichi Ohsawa
发明人： Jun Hatakeyama , Toshihiko Fujii , Youichi Ohsawa
IPC分类号： G03F7/26 , G03F7/095
CPC分类号： G03F7/094 , Y10S430/12 , Y10S430/126
摘要： Provided is a method for forming a resist lower layer material for use in a multilayer resist process, especially two-layer resist process or three-layer resist process, having a function of neutralizing an amine contaminant from a substrate, thereby reducing a harmful effect such as trailing skirts of a resist pattern of an upper layer resist. Specifically, there is provided a material for forming a lower layer of a chemically amplified photoresist layer comprising a crosslinkable polymer and a thermal acid generator that can generate an acid by heating at 100° C. or greater and is represented by the general formula (1a): R1CF2SO3−(R2)4N+ (1a), as well as a resist lower layer substrate comprising a resist lower layer formed using said material.
摘要翻译：提供一种形成用于多层抗蚀剂工艺的抗蚀剂下层材料的方法，特别是具有从基材中和胺污染物的功能的两层抗蚀剂工艺或三层抗蚀剂工艺，从而减少了诸如作为上层抗蚀剂的抗蚀剂图案的尾部裙边。具体地，提供了一种用于形成化学放大光致抗蚀剂层的下层的材料，其包含可交联聚合物和热酸产生剂，其可通过在100℃以上加热而产生酸，并由通式（1a ）：R1CF2SO3-（R2）4N +（1a），以及包含使用所述材料形成的抗蚀剂下层的抗蚀剂下层基板。

4. 发明申请

US20080032231A1 Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern 有权
标题翻译：抵抗下层材料，抗蚀剂包含该材料的下层基材和形成图案的方法
公开(公告)号：US20080032231A1
公开(公告)日：2008-02-07
申请号：US11881761
申请日：2007-07-27
申请人： Jun Hatakeyama , Toshihiko Fujii , Youichi Ohsawa
发明人： Jun Hatakeyama , Toshihiko Fujii , Youichi Ohsawa
IPC分类号： G03F1/04 , G03F7/20
CPC分类号： G03F7/094 , Y10S430/12 , Y10S430/126
摘要： Provided is a method for forming a resist lower layer material for use in a multilayer resist process, especially two-layer resist process or three-layer resist process, having a function of neutralizing an amine contaminant from a substrate, thereby reducing a harmful effect such as trailing skirts of a resist pattern of an upper layer resist. Specifically, there is provided a material for forming a lower layer of a chemically amplified photoresist layer comprising a crosslinkable polymer and a thermal acid generator that can generate an acid by heating at 100° C. or greater and is represented by the general formula (1a): R1CF2SO3−(R2)4N+, (1a) as well as a resist lower layer substrate comprising a resist lower layer formed using said material.
摘要翻译：提供一种形成用于多层抗蚀剂工艺的抗蚀剂下层材料的方法，特别是具有从基材中和胺污染物的功能的两层抗蚀剂工艺或三层抗蚀剂工艺，从而减少了诸如作为上层抗蚀剂的抗蚀剂图案的尾部裙边。具体地，提供了一种用于形成化学放大光致抗蚀剂层的下层的材料，其包含可交联聚合物和热酸产生剂，其可通过在100℃以上加热而产生酸，并由通式（1a ）：<？in-line-formula description =“In-line Formulas”end =“lead”？> R＆lt; 1＆lt; CF 2＆lt; 3＆lt; 3＆lt; （1a）＆lt; / SUP＆gt;（R＆lt; 2＆gt;）＆lt; 4＆gt; “内联式”末端=“尾”→以及包含使用所述材料形成的抗蚀剂下层的抗蚀剂下层基板。

5. 发明申请

US20070275325A1 Photoresist undercoat-forming material and patterning process 有权
标题翻译：光刻胶底涂层成型材料和图案化工艺
公开(公告)号：US20070275325A1
公开(公告)日：2007-11-29
申请号：US11798105
申请日：2007-05-10
申请人： Jun Hatakeyama , Toshihiko Fujii , Takeru Watanabe , Katsuhiro Kobayashi
发明人： Jun Hatakeyama , Toshihiko Fujii , Takeru Watanabe , Katsuhiro Kobayashi
IPC分类号： G03C1/00
CPC分类号： G03F7/091 , C08G8/20 , G03F7/0397 , G03F7/40
摘要： A material comprising a specific bisphenol compound of formula (1) is useful in forming a photoresist undercoat wherein R1 and R2 are H, alkyl, aryl or alkenyl, R3 and R4 are H, alkyl, alkenyl, aryl, acetal, acyl or glycidyl, R5 and R6 are alkyl having a ring structure, or R5 and R6 bond together to form a ring. The undercoat-forming material has an extinction coefficient sufficient to provide an antireflective effect at a thickness of at least 200 nm, and a high etching resistance as demonstrated by slow etching rates with CF4/CHF3 and Cl2/BCl3 gases for substrate processing.
摘要翻译：包含式（1）的特定双酚化合物的材料可用于形成光致抗蚀剂底涂层，其中R 1和R 2均为H，烷基，芳基或链烯基， SO 3和R 4是H，烷基，烯基，芳基，缩醛，酰基或缩水甘油基，R 5和R 6 >是具有环结构的烷基，或R 5和R 6键连接在一起形成环。底涂层材料的消光系数足以在至少200nm的厚度下提供抗反射效果，并且具有高的抗蚀刻性，如通过CF 4 / CHF 3＆lt; 2＆gt;和Cl 2/2 / 3Cl 3气体，用于基板处理。

6. 发明授权

US07632624B2 Photoresist undercoat-forming material and patterning process 有权
标题翻译：光刻胶底涂层成型材料和图案化工艺
公开(公告)号：US07632624B2
公开(公告)日：2009-12-15
申请号：US11798105
申请日：2007-05-10
申请人： Jun Hatakeyama , Toshihiko Fujii , Takeru Watanabe , Katshiro Kobayashi
发明人： Jun Hatakeyama , Toshihiko Fujii , Takeru Watanabe , Katshiro Kobayashi
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/091 , C08G8/20 , G03F7/0397 , G03F7/40
摘要： A material comprising a specific bisphenol compound of formula (1) is useful in forming a photoresist undercoat wherein R1 and R2 are H, alkyl, aryl or alkenyl, R3 and R4 are H, alkyl, alkenyl, aryl, acetal, acyl or glycidyl, R5 and R6 are alkyl having a ring structure, or R5 and R6 bond together to form a ring. The undercoat-forming material has an extinction coefficient sufficient to provide an antireflective effect at a thickness of at least 200 nm, and a high etching resistance as demonstrated by slow etching rates with CF4/CHF3 and Cl2/BCl3 gases for substrate processing.
摘要翻译：包含式（1）的特定双酚化合物的材料可用于形成光致抗蚀剂底涂层，其中R1和R2是H，烷基，芳基或烯基，R3和R4是H，烷基，烯基，芳基，缩醛，酰基或缩水甘油基， R5和R6是具有环结构的烷基，或者R5和R6键合在一起形成环。底涂层材料的消光系数足以在至少200nm的厚度下提供抗反射效果，并且具有高的抗蚀刻性，如通过用于衬底处理的CF 4 / CHF 3和Cl 2 / BCl 3气体的缓慢蚀刻速率所证明的。

7. 发明授权

US06713612B2 Sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process 有权
标题翻译：磺酰基重氮甲烷，光酸产生剂，抗蚀剂组合物和图案化工艺
公开(公告)号：US06713612B2
公开(公告)日：2004-03-30
申请号：US10426623
申请日：2003-05-01
申请人： Katsuhiro Kobayashi , Youichi Ohsawa , Koji Hasegawa , Takao Yoshihara , Kazunori Maeda , Toshihiko Fujii
发明人： Katsuhiro Kobayashi , Youichi Ohsawa , Koji Hasegawa , Takao Yoshihara , Kazunori Maeda , Toshihiko Fujii
IPC分类号： C07C24514
CPC分类号： G03F7/0382 , C07C317/28 , G03F7/0045 , G03F7/0392
摘要： Sulfonyldiazomethane compounds containing a long-chain alkylcyclohexyl group are novel and useful as photoacid generators. Chemical amplification type resist compositions comprising the same are suited for microfabrication because of many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris left after coating, development and peeling, and improved pattern profile after development.
摘要翻译：含有长链烷基环己基的磺酰基重氮甲烷化合物是新颖的，可用作光致酸发生剂。包含该化合物的化学放大型抗蚀剂组合物由于包括改进的分辨率，改善的聚焦纬度，最小化的线宽变化或最小化的线宽变化或形状退化，甚至在长时间的PED，最小的残留在涂层，显影和剥离之后的碎片以及改进的许多优点也适用于微细加工。开发后的图案样式。

8. 发明授权

US08877422B2 Resist underlayer film composition and patterning process using the same 有权
标题翻译：抗蚀剂下层膜组合物和使用其的图案化工艺
公开(公告)号：US08877422B2
公开(公告)日：2014-11-04
申请号：US13269290
申请日：2011-10-07
申请人： Tsutomu Ogihara , Daisuke Kori , Yusuke Biyajima , Toshihiko Fujii , Takeru Watanabe , Takeshi Kinsho
发明人： Tsutomu Ogihara , Daisuke Kori , Yusuke Biyajima , Toshihiko Fujii , Takeru Watanabe , Takeshi Kinsho
IPC分类号： G03F7/004 , G03F7/26 , G03F7/09
CPC分类号： G03F7/091 , G03F7/094
摘要： There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2). There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, namely, an underlayer film having optimum n-value and k-value, excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译：公开了一种抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种下列通式（1-1）和/或（1-2）表示的化合物缩合得到的聚合物，以及一种或多种更多种由下列通式（2）表示的化合物和/或其等价物。可以提供一种特别用于三层抗蚀剂工艺的下层膜组合物，其可以形成具有降低的反射率的下层膜，即具有最佳n值和k值的底层膜，优异的填充性，抗蚀性能，并且特别是在比60nm薄的高方位线中，特别是在蚀刻后不会引起线下落或摆动，以及使用其的图案化工艺。

9. 发明授权

US08603732B2 Resist underlayer film-forming composition, process for forming resist underlayer film and patterning process 有权
标题翻译：抗蚀剂下层膜形成组合物，形成抗蚀剂下层膜的工艺和图案化工艺
公开(公告)号：US08603732B2
公开(公告)日：2013-12-10
申请号：US12978978
申请日：2010-12-27
申请人： Tsutomu Ogihara , Takeru Watanabe , Takeshi Kinsho , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
发明人： Tsutomu Ogihara , Takeru Watanabe , Takeshi Kinsho , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
IPC分类号： G03F7/09 , G03F7/11 , G03F7/20 , G03F7/30 , G03F7/36
CPC分类号： G03F7/11 , B82Y10/00 , C08G61/02 , C08G2261/3424 , G03F7/0752 , H01L21/0332 , H01L21/31116 , H01L21/31138 , H01L21/31144
摘要： There is disclosed a resist underlayer film-forming composition comprising, at least: a resin (A) obtained by condensing a compound represented by the following general formula (1) with a compound represented by the following general formula (2) by the aid of an acid catalyst; a compound (B) represented by the general formula (1); a fullerene compound (C); and an organic solvent. There can be a resist underlayer film composition in a multi-layer resist film to be used in lithography, which underlayer film is excellent in property for filling up a height difference of a substrate, possesses a solvent resistance, and is not only capable of preventing occurrence of twisting during etching of a substrate, but also capable of providing an excellently decreased pattern roughness; a process for forming a resist underlayer film by using the composition; and a patterning process.
摘要翻译：公开了一种抗蚀剂下层膜形成组合物，其至少包括：通过以下通式（1）表示的化合物与下列通式（2）表示的化合物缩合得到的树脂（A）：通过酸催化剂; 由通式（1）表示的化合物（B）; 富勒烯化合物（C）; 和有机溶剂。在光刻中使用的多层抗蚀剂膜中可以存在抗蚀剂下层膜组合物，该下层膜具有优异的填充基板的高度差的性能，具有耐溶剂性，并且不仅能够防止在蚀刻基板期间发生扭曲，而且能够提供优异的图案粗糙度; 通过使用该组合物形成抗蚀剂下层膜的方法; 和图案化过程。

10. 发明授权

US08835092B2 Resist underlayer film composition, process for forming resist underlayer film, patterning process and fullerene derivative 有权
标题翻译：抗蚀剂下层膜组合物，形成抗蚀剂下层膜的工艺，图案化工艺和富勒烯衍生物
公开(公告)号：US08835092B2
公开(公告)日：2014-09-16
申请号：US13015094
申请日：2011-01-27
申请人： Takeru Watanabe , Takeshi Kinsho , Tsutomu Ogihara , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
发明人： Takeru Watanabe , Takeshi Kinsho , Tsutomu Ogihara , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
IPC分类号： G03F7/095 , G03F7/11 , G03F7/40 , G03F7/09 , C07C69/753 , C08L61/06
CPC分类号： C07C69/753 , C07C2604/00 , C08L61/06 , G03F7/094 , G03F7/40
摘要： There is disclosed a resist underlayer film composition of a multilayer resist film used in lithography including (A) a fullerene derivative having a carboxyl group protected by a thermally labile group and (B) an organic solvent. There can be a resist underlayer film composition of a multilayer resist film used in lithography for forming a resist underlayer in which generation of wiggling in substrate etching can be highly suppressed and the poisoning problem in forming an upper layer pattern using a chemically amplified resist can be avoided, a process for forming the resist underlayer film, a patterning process and a fullerene derivative.
摘要翻译：公开了用于光刻的多层抗蚀剂膜的抗蚀剂下层膜组合物，其包含（A）具有由热不稳定基团保护的羧基的富勒烯衍生物和（B）有机溶剂。可以存在用于形成抗蚀剂底层的光刻用的多层抗蚀剂膜的抗蚀剂下层膜组合物，其中可以高度抑制基板蚀刻中的摆动的产生，并且可以使用化学放大抗蚀剂形成上层图案的中毒问题避免形成抗蚀剂下层膜的方法，图案化工艺和富勒烯衍生物。

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