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1. 发明授权

US07303852B2 Photoacid generating compounds, chemically amplified positive resist materials, and pattern forming method 有权
标题翻译：光生酸化合物，化学放大阳性抗蚀剂材料和图案形成方法
公开(公告)号：US07303852B2
公开(公告)日：2007-12-04
申请号：US10375773
申请日：2003-02-27
申请人： Jun Hatakeyama , Tomohiro Kobayashi , Youichi Ohsawa
发明人： Jun Hatakeyama , Tomohiro Kobayashi , Youichi Ohsawa
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/0045 , C07C311/48 , C07D333/46 , C07D335/02 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/0758 , Y10S430/106 , Y10S430/114 , Y10S430/115
摘要： The invention provides a high-resolution resist material comprising an acid generator that has high sensitivity and high resolution with respect to high-energy rays of 300 nm or less, has small line-edge roughness, and is superior in heat stability and in shelf stability, and provides a pattern forming method that uses this resist material. The invention further provides a chemically amplified positive resist material comprising a base resin, an acid generator and a solvent in which the acid generator generates an alkylimidic acid containing a fluorine group, and provides a pattern forming method comprising a step of applying the resist material to the substrate, a step of performing exposure to a high-energy ray of a wavelength of 300 nm or less through a photomask following heat treatment, and a step of performing development by a developing solution following heat treatment.
摘要翻译：本发明提供了一种高分辨率抗蚀剂材料，其包括相对于300nm以下的高能量射线具有高灵敏度和高分辨率的酸发生剂，具有小的线边缘粗糙度，并且具有优异的热稳定性和储存稳定性，并提供使用该抗蚀剂材料的图案形成方法。本发明还提供了一种化学放大正性抗蚀剂材料，其包括基础树脂，酸产生剂和其中酸产生剂产生含氟基团的亚烷基亚胺酸的溶剂，并且提供了图案形成方法，包括将抗蚀剂材料施加到基板，通过热处理后的光掩模进行曝光于波长为300nm以下的高能射线的工序，以及通过热处理后的显影液进行显影的工序。

2. 发明申请

US20120288796A1 RESIST COMPOSITION AND PATTERNING PROCESS 审中-公开
标题翻译：耐腐蚀组合物和方法
公开(公告)号：US20120288796A1
公开(公告)日：2012-11-15
申请号：US13469929
申请日：2012-05-11
申请人： Kazuhiro KATAYAMA , Jun Hatakeyama , Youichi Ohsawa , Koji Hasegawa , Tomohiro Kobayashi
发明人： Kazuhiro KATAYAMA , Jun Hatakeyama , Youichi Ohsawa , Koji Hasegawa , Tomohiro Kobayashi
IPC分类号： G03F7/20 , G03F7/027
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/325
摘要： A resist composition is provided comprising a polymer comprising recurring units having a hydroxyl group substituted with an acid labile group, an onium salt PAG capable of generating a sulfonic acid, imide acid or methide acid, and an onium salt PAG capable of generating a carboxylic acid. A resist film of the composition is improved in dissolution contrast during organic solvent development, and from which a hole pattern having minimized nano-edge roughness can be formed via positive/negative reversal.
摘要翻译：提供了一种抗蚀剂组合物，其包含聚合物，其包含具有被酸不稳定基团取代的羟基的重复单元，能够产生磺酸的鎓盐PAG，酰亚胺酸或甲基化酸，以及能够产生羧酸的鎓盐PAG 。组合物的抗蚀剂膜在有机溶剂显影期间的溶解对比度得到改善，并且可以通过正/负反转形成具有最小化的纳米边缘粗糙度的孔图案。

3. 发明授权

US07105267B2 Resist compositions and patterning process 有权
公开(公告)号：US07105267B2
公开(公告)日：2006-09-12
申请号：US10226286
申请日：2002-08-23
申请人： Jun Hatakeyama , Youichi Ohsawa , Tomohiro Kobayashi
发明人： Jun Hatakeyama , Youichi Ohsawa , Tomohiro Kobayashi
IPC分类号： G03F7/004
CPC分类号： G03F7/0045 , G03F7/0397 , G03F7/0758 , Y10S430/106 , Y10S430/108 , Y10S430/115 , Y10S430/122
摘要： In a resist composition comprising a base resin which is a high molecular weight structure free from an aromatic substituent group, a photoacid generator, and a solvent, the photoacid generator is a one capable of generating a perfluoroalkyl ether sulfonic acid. The resist composition has many advantages including excellent resolution, minimized size difference between isolated and densely packed patterns, and minimized line edge roughness.

4. 发明授权

US08507175B2 Patterning process and resist composition 有权
标题翻译：图案化过程和抗蚀剂组成
公开(公告)号：US08507175B2
公开(公告)日：2013-08-13
申请号：US12905426
申请日：2010-10-15
申请人： Jun Hatakeyama , Masaki Ohashi , Youichi Ohsawa , Kazuhiro Katayama
发明人： Jun Hatakeyama , Masaki Ohashi , Youichi Ohsawa , Kazuhiro Katayama
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20 , G03F7/028
CPC分类号： G03F7/0045 , G03F7/0397 , G03F7/095
摘要： The process forms a pattern by applying a resist composition onto a substrate to form a resist film, baking, exposure, post-exposure baking, and development. The resist composition comprises a polymer comprising recurring units having an acid labile group and substantially insoluble in alkaline developer, a PAG, a PBG capable of generating an amino group, a quencher for neutralizing the acid from PAG for inactivation, and an organic solvent. A total amount of amino groups from the quencher and PBG is greater than an amount of acid from PAG. An unexposed region and an over-exposed region are not dissolved in developer whereas only an intermediate exposure dose region is dissolved in developer. Resolution is doubled by splitting a single line into two through single exposure and development.
摘要翻译：该方法通过将抗蚀剂组合物施加到基底上以形成抗蚀剂膜，烘烤，曝光，曝光后烘烤和显影来形成图案。抗蚀剂组合物包含聚合物，其包含具有酸不稳定基团并且基本上不溶于碱性显影剂的重复单元，PAG，能够产生氨基的PBG，用于中和PAG酸失活的猝灭剂和有机溶剂。来自猝灭剂和PBG的氨基的总量大于来自PAG的酸的量。未曝光区域和过度曝光区域不溶解在显影剂中，而只有中间曝光剂量区域溶解在显影剂中。通过单次曝光和开发将单线分成两组，分辨率翻了一番。

5. 发明授权

US08105748B2 Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process 有权
标题翻译：可聚合阴离子的锍盐和聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US08105748B2
公开(公告)日：2012-01-31
申请号：US12580953
申请日：2009-10-16
申请人： Masaki Ohashi , Youichi Ohsawa , Takeshi Kinsho , Jun Hatakeyama , Seiichiro Tachibana
发明人： Masaki Ohashi , Youichi Ohsawa , Takeshi Kinsho , Jun Hatakeyama , Seiichiro Tachibana
IPC分类号： G03F7/038 , G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： C07D307/77 , C07C309/12 , C07C381/12 , C08F2220/303 , C08F2220/382 , G03F7/0045 , G03F7/0397 , G03F7/2041 , Y10S430/108 , Y10S430/111 , Y10S430/143
摘要： A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R1 is H, F, methyl or trifluoromethyl, R2, R3 and R4 are C1-C10 alkyl, alkenyl or oxoalkyl or C6-C18 aryl, aralkyl or aryloxoalkyl, or two of R2, R3 and R4 may bond together to form a ring with S, A is a C2-C20 hydrocarbon group having cyclic structure, and n is 0 or 1. The sulfonium salt generates a very strong sulfonic acid upon exposure to high-energy radiation. A resist composition comprising a polymer derived from the sulfonium salt is also provided.
摘要翻译：提供了具有式（1）的可聚合阴离子的锍盐，其中R 1是H，F，甲基或三氟甲基，R 2，R 3和R 4是C 1 -C 10烷基，烯基或氧代烷基或C 6 -C 18芳基，芳烷基或芳氧基烷基，或 R 2，R 3和R 4中的两个可以键合在一起形成具有S的环，A是具有环状结构的C 2 -C 20烃基，n是0或1.锍盐在暴露于高温下时产生非常强的磺酸，能量辐射。还提供了包含衍生自锍盐的聚合物的抗蚀剂组合物。

6. 发明授权

US08048610B2 Sulfonium salt-containing polymer, resist composition, and patterning process 有权
标题翻译：含锍盐的聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US08048610B2
公开(公告)日：2011-11-01
申请号：US12428933
申请日：2009-04-23
申请人： Youichi Ohsawa , Jun Hatakeyama , Seiichiro Tachibana , Takeshi Kinsho
发明人： Youichi Ohsawa , Jun Hatakeyama , Seiichiro Tachibana , Takeshi Kinsho
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38 , G03F7/11
CPC分类号： G03F7/0045 , C08F220/18 , C08F220/28 , C08F220/30 , C08F220/38 , G03F7/0392 , G03F7/0397 , G03F7/2041 , Y10S430/143 , Y10S430/167
摘要： A polymer comprising recurring units having formulae (1), (2) and (3) is provided as well as a chemically amplified resist composition comprising the same. R1 is H, F, CH3 or CF3, Rf is H, F, CF3 or C2F5, A is an optionally fluorine or oxygen-substituted divalent organic group, R2, R3 and R4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or may form a ring with the sulfur atom, N=0-2, R8 is H or alkyl, B is a single bond or optionally oxygen-substituted divalent organic group, a=0-3, b=1-3, and X is an acid labile group. The polymer generates a strong sulfonic acid which provides for effective cleavage of acid labile groups in a chemically amplified resist composition.
摘要翻译：提供了包含具有式（1），（2）和（3）的重复单元的聚合物以及包含其的化学放大抗蚀剂组合物。 R 1是H，F，CH 3或CF 3，R f是H，F，CF 3或C 2 F 5，A是任选氟或氧取代的二价有机基团，R 2，R 3和R 4是烷基，烯基，氧代烷基，芳基，芳烷基或芳氧基烷基或者可以与硫原子形成环，N = O-2，R 8是H或烷基，B是单键或任选的氧取代的二价有机基团，a = 0-3，b = 1-3，和 X是酸不稳定组。该聚合物产生强的磺酸，其提供化学增强抗蚀剂组合物中酸不稳定基团的有效切割。

7. 发明申请

US20110212391A1 POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS 有权
标题翻译：聚合物，化学阳离子表面活性剂和形成过程
公开(公告)号：US20110212391A1
公开(公告)日：2011-09-01
申请号：US13035066
申请日：2011-02-25
申请人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
发明人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
IPC分类号： G03F7/20 , G03F7/004 , G03F1/00 , C08F20/38 , C08F20/22
CPC分类号： G03F7/0045 , C08F20/22 , C08F212/14 , C08F220/18 , G03F7/0046 , G03F7/039 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/122 , Y10S430/123 , C08F2220/283 , C08F232/08 , C08F2220/382
摘要： A polymer comprising recurring units having a fluorinated carboxylic acid onium salt structure on a side chain is used to formulate a chemically amplified positive resist composition. When the composition is processed by lithography to form a positive pattern, the diffusion of acid in the resist film is uniform and slow, and the pattern is improved in LER.
摘要翻译：使用包含在侧链上具有氟化羧酸鎓盐结构的重复单元的聚合物来配制化学放大的正性抗蚀剂组合物。当通过光刻处理组合物以形成正图案时，抗蚀剂膜中的酸的扩散是均匀和缓慢的，并且图案在LER中得到改善。

8. 发明申请

US20110033803A1 PATTERNING PROCESS AND RESIST COMPOSITION 有权
标题翻译：绘图工艺和耐腐蚀组合物
公开(公告)号：US20110033803A1
公开(公告)日：2011-02-10
申请号：US12849344
申请日：2010-08-03
申请人： Jun Hatakeyama , Kazuhiro Katayama , Youichi Ohsawa , Masaki Ohashi
发明人： Jun Hatakeyama , Kazuhiro Katayama , Youichi Ohsawa , Masaki Ohashi
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/004 , G03F7/0035 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A pattern is formed by coating a first positive resist composition comprising a copolymer comprising lactone-containing recurring units, acid labile group-containing recurring units and carbamate-containing recurring units, and a photoacid generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for inactivation to acid, coating a second positive resist composition comprising a C3-C8 alcohol and an optional C6-C12 ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.
摘要翻译：通过将包含含内含重复单元，含酸不稳定基团的重复单元和含氨基甲酸酯的重复单元的共聚物和光致酸产生剂的第一正性抗蚀剂组合物涂布在基材上以形成第一抗蚀剂膜，形成图案形成图案曝光，PEB和显影以形成第一抗蚀剂图案，将第一抗蚀剂图案加热至酸失活，将包含C 3 -C 8醇和任选的C 6 -C 12醚的第二正性抗蚀剂组合物涂布到第一抗蚀剂图案承载基底上以形成第二抗蚀剂膜，图案曝光，PEB和显影以形成第二抗蚀剂图案。

9. 发明授权

US07514202B2 Thermal acid generator, resist undercoat material and patterning process 有权
标题翻译：热酸发生器，抗蚀底漆材料和图案化工艺
公开(公告)号：US07514202B2
公开(公告)日：2009-04-07
申请号：US11797948
申请日：2007-05-09
申请人： Youichi Ohsawa , Takeru Watanabe , Jun Hatakeyama
发明人： Youichi Ohsawa , Takeru Watanabe , Jun Hatakeyama
IPC分类号： G03F7/004 , G03F7/30 , C07C309/06
CPC分类号： G03F7/11 , G03F7/0045 , H01L21/31116 , H01L21/31138 , H01L21/31144 , Y10S430/122 , Y10S430/126
摘要： A thermal acid generator of generating an acid on heating above 100° C. has formula: CF3CH(OCOR)CF2SO3−(R1)4N+ wherein R is alkyl or aryl, R1 is hydrogen, alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or R1 may bond together to form a ring with N. The sulfonic acid generated possesses an ester site within molecule so that less bulky acyl groups to bulky groups may be incorporated therein. The thermal acid generator provides a sufficient acid strength, is less volatile due to a high molecular weight, and ensures film formation. Upon disposal of used resist liquid, it may be converted into low accumulative compounds.
摘要翻译：一种在100℃以上加热生成酸的热酸发生剂具有式：CF 3 CH（OCOR）CF 2 SO 3 - （R 1）4 N +，其中R是烷基或芳基，R 1是氢，烷基，链烯基，氧代烷基，芳基，芳烷基或芳氧基烷基，或者R1可以键合在一起形成具有N的环。产生的磺酸在分子内具有酯位点，从而可以在其中引入较大体积的大体积基团的酰基。热酸发生器提供足够的酸强度，由于高分子量而挥发性较低，并且确保成膜。在处理使用过的抗蚀剂液体时，可以将其转化为低浓度的化合物。

10. 发明申请

US20080102407A1 Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process 有权
标题翻译：具有可聚合阴离子的锍盐，聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US20080102407A1
公开(公告)日：2008-05-01
申请号：US11976564
申请日：2007-10-25
申请人： Youichi Ohsawa , Masaki Ohashi , Seiichiro Tachibana , Jun Hatakeyama , Takeru Watanabe
发明人： Youichi Ohsawa , Masaki Ohashi , Seiichiro Tachibana , Jun Hatakeyama , Takeru Watanabe
IPC分类号： G03C1/00 , G03C5/00
CPC分类号： G03F7/0045 , C08F20/22 , C08F20/38 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0397 , Y10S430/108 , Y10S430/111 , Y10S430/122 , Y10S430/124 , Y10S430/126 , Y10S430/143
摘要： A sulfonium salt having a polymerizable anion generates a strong sulfonic acid upon exposure to high-energy radiation so that it facilitates effective scission of acid labile groups in chemically amplified resist compositions. It is useful as a monomer from which a base resin for use in radiation-sensitive resist compositions is derived.
摘要翻译：具有可聚合阴离子的锍盐在暴露于高能量辐射下产生强烈的磺酸，从而有助于在化学增强的抗蚀剂组合物中有效地分裂酸不稳定基团。作为衍生用于辐射敏感性抗蚀剂组合物的基础树脂的单体是有用的。

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