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    • 1. 发明授权
    • Plasma/radiation assisted molecular beam epitaxy method and apparatus
    • 等离子体/辐射辅助分子束外延法和装置
    • US5048457A
    • 1991-09-17
    • US531711
    • 1990-05-31
    • Julius Hyman, Jr.John R. BeattieJesse N. MatossianOwen K. WuJuan F. LamLawrence Anderson
    • Julius Hyman, Jr.John R. BeattieJesse N. MatossianOwen K. WuJuan F. LamLawrence Anderson
    • C30B23/02
    • C30B23/02C30B29/48
    • A molecular beam epitaxy (MBE) growth method and apparatus is disclosed which achieves a significantly improved sticking coefficient for materials like Hg upon a substrate, and thus a higher efficiency. A highly ionized, low pressure plasma is formed consisting of a mixture of ions of one substance of a compound to be epitaxially grown, neutral particles of the substance and electrons, and also preferably both ionization and excitation radiation. The plasma is directed onto a substrate together with a flux of the other substance in the compound; the flux can be in the form of either a vapor, or a second plasma. Radiation assisted epitaxial growth for Hg compounds in which ionization and excitation radiation are formed from Hg vapor and used to assist epitaxial growth with neutral Hg particles is also described. The plasma is formed in a special discharge chamber having a hollow cathode with an emissive-mix-free cathode insert. The source is preferably a refractory metal such as rolled tantalum foil, which is substantially emissive-material-free and does not contaminate the plasma. Good results are obtained by allowing the plasma to simply diffuse out through an exit port in the discharge chamber, without special extraction assemblies required by prior ion thrusters. Hg sticking coefficients have been improved by a factor of 40 or more.
    • 公开了一种分子束外延(MBE)生长方法和装置,其实现了对衬底上的诸如Hg的材料的显着改善的粘附系数,并且因此具有更高的效率。 形成高离子化的低压等离子体,其由外延生长的化合物的一种物质的离子和物质的中性粒子和电子的混合物组成,并且还优选电离和激发辐射。 等离子体与化合物中另一种物质的助熔剂一起引导到基底上; 通量可以是蒸汽或第二等离子体的形式。 还描述了汞化合物的辐射辅助外延生长,其中电离和激发辐射由Hg蒸气形成并用于辅助外延生长与中性Hg颗粒。 等离子体形成在具有空心阴极的特殊放电室中,其具有无发射混合阴极插入物。 来源优选是难熔金属,例如轧制钽箔,其基本上不发射材料,并且不污染等离子体。 通过允许等离子体简单地通过放电室中的出口扩散出来,而不需要先前的离子推进器所需的特殊提取组件,可获得良好的结果。 Hg粘附系数提高了40倍以上。
    • 2. 发明授权
    • Plasma/radiation assisted molecular beam epitaxy method
    • 等离子/辐射辅助分子束外延法
    • US5152866A
    • 1992-10-06
    • US532144
    • 1990-05-31
    • Julius Hyman, Jr.John R. BeattieJesse N. MatossianOwen K. WuJuan F. LamLawrence Anderson
    • Julius Hyman, Jr.John R. BeattieJesse N. MatossianOwen K. WuJuan F. LamLawrence Anderson
    • C30B23/02
    • C30B23/02C30B29/48
    • A molecular beam epitaxy (MBE) growth method and apparatus is disclosed which achieves a significantly improved sticking coefficient for materials like Hg upon a substrate, and thus a higher efficiency. A highly ionized, low pressure plasma is formed consisting of a mixture of ions of one substance of a compound to be epitaxially grown, neutral particles of the substance and electrons, and also preferably both ionization and excitation radiation. The plasma is directed onto a substrate together with a flux of the other substance in the compound; the flux can be in the form of either a vapor, or a second plasma. Radiation assisted epitaxial growth for Hg compounds in which ionization and excitation radiation are formed from Hg vapor and used to assist epitaxial growth with neutral Hg particles is also described. The plasma is formed in a special discharge chamber having a hollow cathode with an emissive-mix-free cathode insert. The source is preferably a refractory metal such as rolled tantalum foil, which is substantially emissive-material-free and does not contaminate the plasma. Good results are obtained by allowing the plasma to simply diffuse out through an exit port in the discharge chamber, without special extraction assemblies required by prior ion thrusters. Hg sticking coefficients have been improved by a factor of 40 or more.
    • 公开了一种分子束外延(MBE)生长方法和装置,其实现了对衬底上的诸如Hg的材料的显着改善的粘附系数,并且因此具有更高的效率。 形成高离子化的低压等离子体,其由外延生长的化合物的一种物质的离子和物质的中性粒子和电子的混合物组成,并且还优选电离和激发辐射。 等离子体与化合物中另一种物质的助熔剂一起引导到基底上; 通量可以是蒸汽或第二等离子体的形式。 还描述了汞化合物的辐射辅助外延生长,其中电离和激发辐射由Hg蒸气形成并用于辅助外延生长与中性Hg颗粒。 等离子体形成在具有空心阴极的特殊放电室中,其具有无发射混合阴极插入物。 来源优选是难熔金属,例如轧制钽箔,其基本上不发射材料,并且不污染等离子体。 通过允许等离子体简单地通过放电室中的出口扩散出来,而不需要先前的离子推进器所需的特殊提取组件,可获得良好的结果。 Hg粘附系数提高了40倍以上。