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1. 发明授权

US6120366A Chemical-mechanical polishing pad 有权
标题翻译：化学机械抛光垫
公开(公告)号：US6120366A
公开(公告)日：2000-09-19
申请号：US225367
申请日：1999-01-04
申请人： Juen-Kuen Lin , Chien-Hsin Lai , Peng-Yih Peng , Edward Yang , Kun-Lin Wu , Fu-Yang Yu
发明人： Juen-Kuen Lin , Chien-Hsin Lai , Peng-Yih Peng , Edward Yang , Kun-Lin Wu , Fu-Yang Yu
IPC分类号： B24B37/26 , B24D13/12 , B24D13/14 , H01L21/304 , B23F21/03 , B24B1/00
CPC分类号： B24B37/26
摘要： The invention provides a chemical-mechanical polishing pad, which includes a plurality of annular grooves and a plurality of streamline grooves designed according to principles of the hydrodynamics. The streamline grooves of polishing pad are designed according to flow equations derived from source flow and vortex flow, and the streamline grooves of polishing pad uniformly distribute the slurry on the polishing pad. An angle and a depth of the streamline groove, which are calculated by boundary layer effect of the streamline groove function, are used to design an optimum structure for polishing pad.
摘要翻译：本发明提供了一种化学机械抛光垫，其包括多个环形槽和根据流体动力学原理设计的多条流线槽。抛光垫的流线槽根据源流和涡流的流动方程设计，抛光垫的流线槽将浆料均匀分布在抛光垫上。使用由流线槽功能的边界层效应计算的流线槽的角度和深度来设计抛光垫的最佳结构。

2. 发明授权

US06352244B2 Auxiliary gasline-heating unit in chemical vapor deposition 有权
标题翻译：化学气相沉积辅助加气线加热装置
公开(公告)号：US06352244B2
公开(公告)日：2002-03-05
申请号：US09909498
申请日：2001-07-20
申请人： Juen-Kuen Lin , Chien-Hsin Lai , Peng-Yih Peng , Fu-Yang Yu
发明人： Juen-Kuen Lin , Chien-Hsin Lai , Peng-Yih Peng , Fu-Yang Yu
IPC分类号： B01F304
CPC分类号： C23C16/45561 , C23C16/4482
摘要： An auxiliary gasline-heating unit is used in a chemical vapor deposition apparatus. The auxiliary gasline-heating unit serves to increase the exit temperature of the mixture of N2 gas and He-dilute gas in order to prevent TDMAT, Ti[N(CH3)2]4, from being condensed and becoming a gasline contaminant when the mixture mixes with the TDMAT and a carrier gas.
摘要翻译：在化学气相沉积设备中使用辅助气体加热单元。辅助气体线路加热装置用于增加N 2气体和He稀释气体混合物的出口温度，以防止混合物中的TDMAT，Ti [N（CH 3）2] 4被冷凝并成为气体线路污染物与TDMAT和载气混合。

3. 发明授权

US06322057B1 Auxiliary gasline-heating unit in chemical vapor deposition 有权
公开(公告)号：US06322057B1
公开(公告)日：2001-11-27
申请号：US09577068
申请日：2000-05-22
申请人： Juen-Kuen Lin , Chien-Hsin Lai , Peng-Yih Peng , Fu-Yang Yu
发明人： Juen-Kuen Lin , Chien-Hsin Lai , Peng-Yih Peng , Fu-Yang Yu
IPC分类号： B01F304
CPC分类号： C23C16/45561 , C23C16/4482
摘要： An auxiliary gasline-heating unit is used in a chemical vapor deposition apparatus. The auxiliary gasline-heating unit serves to increase the exit temperature of the mixture of N2 gas and He-dilute gas in order to prevent TDMAT, Ti[N(CH3)2]4, from being condensed and becoming a gasline contaminant when the mixture mixes with the TDMAT and a carrier gas.

4. 发明授权

US06228420B1 Method to maintain consistent thickness of thin film deposited by chemical vapor deposition 失效
标题翻译：通过化学气相沉积保持薄膜厚度保持一致的方法
公开(公告)号：US06228420B1
公开(公告)日：2001-05-08
申请号：US09420961
申请日：1999-10-20
申请人： Juen-Kuen Lin , Chien-Hsin Lai , Hao-Kuang Chiu , Fu-Yang Yu
发明人： Juen-Kuen Lin , Chien-Hsin Lai , Hao-Kuang Chiu , Fu-Yang Yu
IPC分类号： C23C1600
CPC分类号： C23C16/52 , C23C16/448
摘要： A method to maintain a consistent thin film thickness deposited by chemical vapor deposition is described in which method a compensative coefficient K is provided. The initial preset deposition time T0 is multiplied by the compensative coefficient K to obtain an actual deposition time T, where T=K×T0. Using the actual deposition time T to conduct the deposition, the expected thickness of the thin film is obtained.
摘要翻译：描述了通过化学气相沉积来保持沉积的一致的薄膜厚度的方法，其中提供了补偿系数K. 将初始预设沉积时间T0乘以补偿系数K以获得实际沉积时间T，其中T = K×T0。使用实际的沉积时间T进行沉积，获得预期的薄膜厚度。

5. 发明授权

US6165255A Chemical-liquid controlling apparatus 有权
标题翻译：化学液体控制装置
公开(公告)号：US6165255A
公开(公告)日：2000-12-26
申请号：US267845
申请日：1999-03-12
申请人： Chien-Hsin Lai , Peng-Yih Peng , Li-Min Chang , Fu-Yang Yu
发明人： Chien-Hsin Lai , Peng-Yih Peng , Li-Min Chang , Fu-Yang Yu
IPC分类号： B01D19/00
CPC分类号： B01D19/0042 , B01D19/0068
摘要： A chemical-liquid controlling apparatus is described. The chemical-liquid controlling apparatus is mounted between a chemical-liquid container and an exhaust apparatus. During a chemical-liquid refilling process, once the chemical liquid is drawn out of the container by the exhaust apparatus, the chemical liquid first enters the chemical-liquid controlling apparatus. The chemical-liquid controlling apparatus separates the chemical liquid from a nitrogen gas and a chemical gas. In addition, the chemical-liquid refilling process is stopped by a signal transmitted from a leak sensor.
摘要翻译：描述了一种药液控制装置。药液控制装置安装在药液容器和排气装置之间。在化学液体再填充过程中，一旦化学液体被排气装置从容器中抽出，化学液体首先进入化学液体控制装置。药液控制装置将化学液体与氮气和化学气体分离。此外，通过从泄漏传感器传输的信号来停止药液补充过程。

6. 发明授权

US06676801B2 Pressure suppression device for chemical mechanical polishing machine and method thereof 有权
标题翻译：化学机械抛光机压力抑制装置及其方法
公开(公告)号：US06676801B2
公开(公告)日：2004-01-13
申请号：US09845371
申请日：2001-04-30
申请人： Chien-Hsin Lai , Jung-Nan Tseng , Huang-Yi Lin , Fu-Yang Yu
发明人： Chien-Hsin Lai , Jung-Nan Tseng , Huang-Yi Lin , Fu-Yang Yu
IPC分类号： H01L21302
CPC分类号： B24B37/30 , B24B37/042 , B24B49/16 , H01L21/30625
摘要： A pressure suppression device for a chemical mechanical polishing machine. The chemical mechanical polishing machine includes a polishing table and a polishing head. The polishing table has a polishing pad and a polishing gas input through which a polishing gas is charged. The polishing head holds a wafer and has a wafer gas input through which a wafer gas is charged. The pressure suppression device has a pressure releasing component and a gas input tube coupled to the wafer gas input and the pressure releasing component. When a polishing pressure applied to the polishing pad is smaller than a wafer pressure applied to the wafer, the pressure releasing component releases a part of the wafer pressure until the wafer pressure is smaller than the polishing pressure. As a result, this prevents the wafer slippage or broken wafer that occur when the wafer is blown off from the polishing head by too much wafer pressure.
摘要翻译：一种用于化学机械抛光机的压力抑制装置。化学机械抛光机包括抛光台和抛光头。抛光台具有抛光垫和抛光气体输入，通过该抛光气体输入抛光气体。抛光头保持晶片并具有晶片气体输入，晶片气体通过晶片气体输入。压力抑制装置具有联接到晶片气体输入端和压力释放部件的压力释放部件和气体输入管。当施加到抛光垫的抛光压力小于施加到晶片的晶片压力时，压力释放组件释放晶片压力的一部分，直到晶片压力小于抛光压力。结果，这防止了当晶片被太多的晶片压力从抛光头吹出时发生的晶片滑动或破碎的晶片。

7. 发明授权

US6129043A Gas tube with heating apparatus 有权
标题翻译：带加热装置的气管
公开(公告)号：US6129043A
公开(公告)日：2000-10-10
申请号：US257577
申请日：1999-02-25
申请人： Chien-Hsin Lai , Fu-Yang Yu
发明人： Chien-Hsin Lai , Fu-Yang Yu
IPC分类号： C23C16/452 , C23C16/455 , C23C10/00 , F17D1/04 , F28C1/14
CPC分类号： C23C16/45561 , C23C16/452 , C23C16/455 , Y10T137/6579
摘要： A gas tube with heating apparatus. The gas tube is applicable in a chemical vapor deposition machine. The gas comprises a gas circulating tube and a coaxial gas tube invaginating a gas transporting tube therein. A heater is installed in the gas circulating tube, while the coaxial tube is covered by a thermal insulating layer. In addition, a control valve, a pressure gauge, and a particle trap are installed in a gas supplying tube connecting with the gas circulating tube.
摘要翻译：带加热装置的气管。气体管适用于化学气相沉积机。该气体包括气体循环管和同轴气体管，其中装有气体输送管。加热器安装在气体循环管中，而同轴管被绝热层覆盖。此外，在与气体循环管连接的气体供给管中安装有控制阀，压力计和颗粒捕集器。

8. 发明授权

US06307163B1 Chemical mixer tank calibrator and calibrating method for the same 失效
标题翻译：化学搅拌槽校准仪和校准方法相同
公开(公告)号：US06307163B1
公开(公告)日：2001-10-23
申请号：US09285923
申请日：1999-04-02
申请人： Chien-Hsin Lai , Fu-Yang Yu
发明人： Chien-Hsin Lai , Fu-Yang Yu
IPC分类号： G01G1302
CPC分类号： G01G19/34 , G01G23/163
摘要： A chemical mixer tank calibrator and a calibrating method for the same. The chemical mixer tank calibrator calibrates the weight of the mixer tank through a step motor. Once the chemical in the mixer tank is used up, the mixer tank can be automatically filled with chemical. Thus, the chemical in the mixer tank can adequately supply the buffer tank and the machine at any given time.
摘要翻译：化学搅拌槽校准器及其校准方法。化学混合器罐校准器通过步进电机校准混合罐的重量。一旦混合罐中的化学物质用尽，混合罐就可以自动填充化学物质。因此，混合罐中的化学物质可以在任何给定的时间适当地供应缓冲罐和机器。

9. 发明授权

US06648729B2 Wafer pressure regulation system for polishing machine 有权
公开(公告)号：US06648729B2
公开(公告)日：2003-11-18
申请号：US10172308
申请日：2002-06-14
申请人： Chien-Hsin Lai , Cheng-Chi Hsieh , Jung-Nan Tseng , Huang-Yi Lin , Fu-Yang Yu
发明人： Chien-Hsin Lai , Cheng-Chi Hsieh , Jung-Nan Tseng , Huang-Yi Lin , Fu-Yang Yu
IPC分类号： B25B5100
CPC分类号： B24B37/005 , B24B49/16
摘要： A controlled pressure regulation system generates the wafer-pressing pressures during a polishing operation. A wafer carrier head holds a wafer to be polished against a platen. A first and second pressure regulators respectively generate a first and second pressure onto the platen and the wafer carrier head to press the wafer to be polished. A first and second controllers are respectively connected to the first and second pressure regulators in control feedback loops to control the generation of the first and second pressures. The first and second pressures are controlled to obtain a desired difference of pressure between the first and second pressure.

10. 发明授权

US5604152A CVD process for deposition of amorphous silicon 失效
标题翻译：沉积非晶硅的CVD工艺
公开(公告)号：US5604152A
公开(公告)日：1997-02-18
申请号：US344011
申请日：1994-11-23
申请人： Chao-Yang Chen , Fu-Yang Yu
发明人： Chao-Yang Chen , Fu-Yang Yu
IPC分类号： H01L21/205 , H01L21/20
CPC分类号： H01L21/02381 , H01L21/02532 , H01L21/0262
摘要： A novel process for depositing amorphous silicon has been described. The process features the homogeneous reaction of, decomposition of SiH2 and deposition of amorphous silicon, in a horizontal LPCVD reaction chamber. The SiH2 is produced by initially breaking down SiH4 in a heated autoclave apparatus, and then transferring the SiH2 to the LPCVD system through heated feed lines. This homogeneous process results in excellent thickness and resistivity uniformity for wafers placed along the horizontal axis of the LPCVD chamber.
摘要翻译：已经描述了用于沉积非晶硅的新颖方法。该方法在水平LPCVD反应室中具有SiH2的分解和非晶硅的沉积的均匀反应。 SiH2通过在加热的高压灭菌装置中首先分解SiH 4，然后通过加热的进料管线将SiH2转移到LPCVD系统来制备。对于沿着LPCVD室的水平轴放置的晶片，这种均匀的过程导致优异的厚度和电阻率均匀性。

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