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1. 发明申请

US20130210199A1 METHOD FOR DEPOSITING AN ENCAPSULATING FILM 有权
标题翻译：沉积膜的方法
公开(公告)号：US20130210199A1
公开(公告)日：2013-08-15
申请号：US13768921
申请日：2013-02-15
申请人： Jrjyan Jerry CHEN , Tae K. WON , Beom Soo PARK , Young Jin CHOI , Soo Young CHOI
发明人： Jrjyan Jerry CHEN , Tae K. WON , Beom Soo PARK , Young Jin CHOI , Soo Young CHOI
IPC分类号： H01L51/52
CPC分类号： H01L51/5256 , C23C16/26 , C23C16/345
摘要： A method and apparatus for depositing a material layer, such as encapsulating film, onto a substrate is described. In one embodiment, an encapsulating film formation method includes delivering a gas mixture into a processing chamber, the gas mixture comprising a silicone-containing gas, a first nitrogen-containing gas, a second nitrogen-containing gas and hydrogen gas; energizing the gas mixture within the processing chamber by applying between about 0.350 watts/cm2 to about 0.903 watts/cm2 to a gas distribution plate assembly spaced about 800 mils to about 1800 mils above a substrate positioned within the processing chamber; maintaining the energized gas mixture within the processing chamber at a pressure of between about 0.5 Torr to about 3.0 Torr; and depositing an inorganic encapsulating film on the substrate in the presence of the energized gas mixture. In other embodiments, an organic dielectric layer is sandwiched between inorganic encapsulating layers.
摘要翻译：描述了用于将材料层（例如封装膜）沉积到基底上的方法和装置。在一个实施方案中，封装膜形成方法包括将气体混合物输送到处理室中，所述气体混合物包含含硅氧烷气体，第一含氮气体，第二含氮气体和氢气; 通过向位于处理室内的基板上方间隔约800密耳至约1800密耳的气体分配板组件施加约0.350瓦特/平方厘米至约0.903瓦特/平方厘米，对处理室内的气体混合物通电; 将加压气体混合物在处理室内保持在约0.5托至约3.0托之间的压力; 以及在通电的气体混合物的存在下在基底上沉积无机封装膜。在其他实施例中，有机介电层夹在无机封装层之间。

2. 发明申请

US20140024180A1 INTERFACE ADHESION IMPROVEMENT METHOD 有权
标题翻译：界面粘合改进方法
公开(公告)号：US20140024180A1
公开(公告)日：2014-01-23
申请号：US13947032
申请日：2013-07-20
申请人： Young Jin CHOI , Jrjyan Jerry CHEN , Beom Soo PARK , Soo Young CHOI
发明人： Young Jin CHOI , Jrjyan Jerry CHEN , Beom Soo PARK , Soo Young CHOI
IPC分类号： H01L21/02
CPC分类号： H01L21/02107 , C23C16/308 , H01L51/0096 , H01L51/5253 , Y02E10/549
摘要： Embodiments of the invention provide methods of an interface adhesion improvement methods used on a transparent substrate for OLED or thin film transistor applications. In one embodiment, a method of forming a buffer layer on a surface of a substrate includes providing a substrate having an planarization material disposed thereon in a processing chamber, supplying a buffer layer gas mixture including a silicon containing gas into the processing chamber, controlling a substrate temperature less than about 100 degrees Celsius, forming a buffer layer on the planarization material, supplying an encapsulating barrier layer deposition gas mixture including a silicon containing gas and a nitrogen containing gas into the processing chamber, and forming an encapsulating barrier layer on the buffer layer.
摘要翻译：本发明的实施例提供了在用于OLED或薄膜晶体管应用的透明基板上使用的界面附着改进方法的方法。在一个实施例中，在衬底的表面上形成缓冲层的方法包括在处理室中提供其上设置有平坦化材料的衬底，将包含含硅气体的缓冲层气体混合物供应到处理室中，衬底温度低于约100摄氏度，在平坦化材料上形成缓冲层，向处理室中提供包含含硅气体和含氮气体的封装阻挡层沉积气体混合物，并在缓冲层上形成封装阻挡层层。

3. 发明申请

US20120171391A1 THIN FILM DEPOSITION USING MICROWAVE PLASMA 有权
标题翻译：薄膜沉积使用微波等离子体
公开(公告)号：US20120171391A1
公开(公告)日：2012-07-05
申请号：US13331021
申请日：2011-12-20
申请人： Tae Kyung WON , Helinda NOMINANDA , Seon-Mee CHO , Soo Young CHOI , Beom Soo PARK , John M. WHITE , Suhail ANWAR , Jozef KUDELA
发明人： Tae Kyung WON , Helinda NOMINANDA , Seon-Mee CHO , Soo Young CHOI , Beom Soo PARK , John M. WHITE , Suhail ANWAR , Jozef KUDELA
IPC分类号： C23C16/511
CPC分类号： C23C16/345 , C23C16/45578 , C23C16/511 , C23C16/545 , H01J37/32192 , H01J37/3222 , H01J37/3244
摘要： Embodiments of the present invention generally provide deposition processes for a silicon-containing dielectric layer using an improved microwave-assisted CVD chamber. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method generally includes applying a microwave power to an antenna coupled to a microwave source disposed within the processing chamber, wherein the microwave source is disposed relatively above a gas feeding source configured to provide a gas distribution coverage covering substantially an entire surface of the substrate, and exposing the substrate to a microwave plasma generated from a processing gas provided by the gas feeding source to deposit a silicon-containing layer on the substrate at a temperature lower than about 200 degrees Celsius, the microwave plasma using a microwave power of about 500 milliWatts/cm2 to about 5,000 milliWatts/cm2 at a frequency of about 1 GHz to about 10 GHz.
摘要翻译：本发明的实施方案通常提供使用改进的微波辅助CVD室的含硅介电层的沉积工艺。在一个实施例中，提供了一种在处理室中处理衬底的方法。该方法通常包括将微波功率施加到耦合到设置在处理室内的微波源的天线，其中微波源设置在气体馈送源的相对上方，该气体馈送源被配置成提供覆盖基板整个表面的气体分布覆盖，并将衬底暴露于由气体供给源提供的处理气体产生的微波等离子体中，以在低于约200摄氏度的温度下将含硅层沉积在衬底上，微波等离子体使用约500毫瓦的微波功率 cm 2至约5,000毫瓦/ cm 2，频率约为1GHz至约10GHz。

4. 发明申请

US20140251216A1 FLIP EDGE SHADOW FRAME 审中-公开
标题翻译：卷边边框
公开(公告)号：US20140251216A1
公开(公告)日：2014-09-11
申请号：US13789188
申请日：2013-03-07
申请人： Qunhua WANG , Soo Young CHOI , Robin L. TINER , John M. WHITE , Gaku FURUTA , Beom Soo PARK
发明人： Qunhua WANG , Soo Young CHOI , Robin L. TINER , John M. WHITE , Gaku FURUTA , Beom Soo PARK
IPC分类号： C23C16/04
CPC分类号： C23C16/042 , C23C14/042 , C23C16/4585 , H01J37/32477 , H01J37/32623 , H01J37/32715
摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.
摘要翻译：本文描述了用于处理衬底的装置。用于控制基板上的沉积的装置可以包括：腔室，其包括阴影框架支撑件，包括基板支撑表面的基板支撑件，具有包括第一支撑表面的阴影框架主体的阴影框架，与第一表面相对的第二支撑表面，以及与阴影框体连接的可拆卸唇缘。可拆卸唇缘可以包括支撑连接，面向基底的第一唇缘表面，与第一唇缘表面相对的第二唇缘表面，位于第一支撑表面上方的第一边缘以及与第一边缘相对的第二边缘以接触基底。

5. 发明申请

US20130302999A1 SIOX PROCESS CHEMISTRY DEVELOPMENT USING MICROWAVE PLASMA CVD 有权
标题翻译：使用微波等离子体CVD的SIOX工艺化学发展
公开(公告)号：US20130302999A1
公开(公告)日：2013-11-14
申请号：US13886175
申请日：2013-05-02
申请人： Tae Kyung WON , Seon-Mee CHO , Soo Young CHOI , Beom Soo PARK , Dong-Kil YIM , John M. WHITE , Jozef KUDELA
发明人： Tae Kyung WON , Seon-Mee CHO , Soo Young CHOI , Beom Soo PARK , Dong-Kil YIM , John M. WHITE , Jozef KUDELA
IPC分类号： H01L21/02
CPC分类号： H01L21/0262 , C23C16/401 , C23C16/45578 , C23C16/511 , C23C16/545 , H01L21/02164 , H01L21/02211 , H01L21/02274
摘要： Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400° C., flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.
摘要翻译：本文描述了用于处理衬底的方法。方法可以包括将基底定位在处理室中，将处理室保持在低于400℃的温度，使包含硅氢化物或硅卤化物的反应气体和氧化前体流入处理室，施加微波功率以从反应气体中产生微波等离子体，以及在衬底的暴露表面的至少一部分上沉积氧化硅层。

6. 发明申请

US20150042859A1 20987 有权
公开(公告)号：US20150042859A1
公开(公告)日：2015-02-12
申请号：US14338360
申请日：2014-07-23
申请人： Jung Ho LEE , Jin Woo KIM , Beom Soo PARK , Jae Cheol YUN
发明人： Jung Ho LEE , Jin Woo KIM , Beom Soo PARK , Jae Cheol YUN
IPC分类号： H04N5/372
CPC分类号： H04N5/378 , H03M1/0685 , H03M1/56 , H04N5/3575
摘要： A method of operating an image sensor includes generating a plurality of ramping up/down signals, and comparing a correlated double sampled pixel signal produced from an output of a pixel with a correlated double sampled first ramping up/down signal among the plurality of ramping up/down signals in a reset interval. The method further includes comparing the correlated double sampled pixel signal with the correlated double sampled first ramping up/down signal at one sampling time or more in an image interval, and a step of outputting a selected ramping up/down signal among the plurality of ramping up/down signals based on a result of the comparison.
摘要翻译：操作图像传感器的方法包括产生多个斜坡上升/下降信号，并且将从像素的输出产生的相关双重采样像素信号与多个斜坡上升中的相关双倍采样的第一斜坡上升/下降信号进行比较 / down信号在复位间隔。该方法还包括在图像间隔中的一个采样时间或更长时间比较相关双重采样像素信号与相关双采样第一斜坡上升/下降信号，以及在多个斜坡之间输出所选择的斜坡上升/下降信号的步骤基于比较结果的上/下信号。

7. 发明申请

US20090083953A1 CLAMP MECHANISM FOR A BACKING PLATE DISPOSED IN A PECVD CHAMBER 审中-公开
标题翻译：用于在PECVD室中处理的背板的夹持机构
公开(公告)号：US20090083953A1
公开(公告)日：2009-04-02
申请号：US12199456
申请日：2008-08-27
申请人： Sam H. KIM , Beom Soo PARK , William N. STERLING
发明人： Sam H. KIM , Beom Soo PARK , William N. STERLING
IPC分类号： A44B21/00
CPC分类号： C23C16/4409 , H01J37/32458 , Y10T24/44043
摘要： Embodiments described herein relate to a clamp mechanism for a backing plate disposed in a PECVD chamber, comprising an upper clamp portion fixed to an interior portion of a chamber lid, and a lower clamp portion in sliding contact with the upper clamp portion and the backing plate, wherein the lower clamp portion comprises at least one fastener disposed through the lower clamp portion and the chamber lid, the at least one fastener comprising an adjustment member, and wherein rotation of the adjustment member causes lateral movement and compression to the backing plate.
摘要翻译：本文所述的实施例涉及一种用于设置在PECVD室中的背板的夹紧机构，包括固定到室盖的内部的上夹具部分和与上夹板部分和背板滑动接触的下夹具部分其中所述下夹具部分包括穿过所述下夹具部分和所述腔室盖的至少一个紧固件，所述至少一个紧固件包括调节构件，并且其中所述调节构件的旋转导致横向运动并压缩到所述背板。

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