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1. 发明授权

US08323868B2 Bilayer systems including a polydimethylglutarimide-based bottom layer and compositions thereof 有权
标题翻译：双层体系包括聚二甲基戊二酰亚胺基底层及其组合物
公开(公告)号：US08323868B2
公开(公告)日：2012-12-04
申请号：US12613800
申请日：2009-11-06
申请人： Joy Cheng , Ho-Cheol Kim , Hiroshi Ito , Atsuko Ito, legal representative , Hoa D. Truong
发明人： Joy Cheng , Ho-Cheol Kim , Hiroshi Ito , Hoa D. Truong
IPC分类号： G03F7/00 , G03F7/004 , G03F7/028 , G03F7/11
CPC分类号： G03F7/091 , G03F7/0392 , G03F7/095
摘要： Bilayer systems include a bottom layer formed of polydimethylglutarimide, an acid labile dissolution inhibitor and a photoacid generator. The bilayer system can be exposed and developed in a single exposure and development process.
摘要翻译：双层体系包括由聚二甲基戊二酰亚胺形成的底层，酸不稳定溶解抑制剂和光酸产生剂。双层系统可以在单一的曝光和开发过程中暴露和发展。

2. 发明申请

US20110111339A1 BILAYER SYSTEMS INCLUDING A POLYDIMETHYLGLUTARIMIDE-BASED BOTTOM LAYER AND COMPOSITIONS THEREOF 有权
标题翻译：双层系统，其中包括基于聚二甲基硅氧烷的底层及其组合物
公开(公告)号：US20110111339A1
公开(公告)日：2011-05-12
申请号：US12613800
申请日：2009-11-06
申请人： Joy Cheng , Ho-Cheol Kim , Hiroshi Ito , Atsuko Ito , Hoa D. Truong
发明人： Joy Cheng , Ho-Cheol Kim , Hiroshi Ito , Atsuko Ito , Hoa D. Truong
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/091 , G03F7/0392 , G03F7/095
摘要： Bilayer systems include a bottom layer formed of polydimethylglutarimide, an acid labile dissolution inhibitor and a photoacid generator. The bilayer system can be exposed and developed in a single exposure and development process.
摘要翻译：双层体系包括由聚二甲基戊二酰亚胺形成的底层，酸不稳定溶解抑制剂和光酸产生剂。双层系统可以在单一的曝光和开发过程中暴露和发展。

3. 发明授权

US08821978B2 Methods of directed self-assembly and layered structures formed therefrom 有权
标题翻译：定向自组装方法和从其形成的分层结构
公开(公告)号：US08821978B2
公开(公告)日：2014-09-02
申请号：US12641959
申请日：2009-12-18
申请人： Joy Cheng , William D. Hinsberg , Ho-Cheol Kim , Young-Hye Na , Daniel Paul Sanders , Linda Karin Sundberg , Hoa D. Truong , Gregory Michael Wallraff , Atsuko Ito
发明人： Joy Cheng , William D. Hinsberg , Hiroshi Ito , Ho-Cheol Kim , Young-Hye Na , Daniel Paul Sanders , Linda Karin Sundberg , Hoa D. Truong , Gregory Michael Wallraff
IPC分类号： B32B3/10 , G03F7/16 , G03F7/38 , G03F7/40 , G03F7/30
CPC分类号： B82Y40/00 , B81C1/00031 , B81C2201/0149 , G03F7/0392 , G03F7/09 , G03F7/091 , G03F7/165 , G03F7/325 , G03F7/327 , G03F7/40
摘要： A method of forming a layered structure comprising a domain pattern of a self-assembled material utilizes a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist. The developed photoresist is not soluble in an organic casting solvent for a material capable of self-assembly. The developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the material capable of self-assembly and the organic casting solvent is casted on the patterned photoresist layer. Upon removal of the organic casting solvent, the material self-assembles, thereby forming the layered structure.
摘要翻译：形成包括自组装材料的畴图案的分层结构的方法利用包含非交联显影光致抗蚀剂的负色调图案化光致抗蚀剂层。显影的光致抗蚀剂不溶于用于能够自组装的材料的有机浇铸溶剂中。显影的光致抗蚀剂可溶于含水碱性显影剂和/或第二有机溶剂。将包含能够自组装的材料和有机浇铸溶剂的溶液浇铸在图案化的光致抗蚀剂层上。在去除有机浇注溶剂时，材料自组装，从而形成层状结构。

4. 发明授权

US07993812B2 Calixarene blended molecular glass photoresists and processes of use 有权
标题翻译：杯芳烃混合分子玻璃光刻胶和使用方法
公开(公告)号：US07993812B2
公开(公告)日：2011-08-09
申请号：US12507968
申请日：2009-07-23
申请人： Luisa D. Bozano , Hiroshi Ito , Atsuko Ito, legal representative , Linda K. Sundberg
发明人： Luisa D. Bozano , Hiroshi Ito , Linda K. Sundberg
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0392 , G03F7/0045 , Y10S430/106
摘要： Photoresist compositions include a blend of at least one fully protected calix[4]resorcinarene and at least one unprotected calix[4]resorcinarene, wherein the fully protected calix[4]resorcinarene has phenolic groups protected with acid labile protective groups; a photoacid generator; and a solvent, and wherein the blend and the photoacid generator are soluble in the solvent. Also disclosed are processes for generating a resist image on a substrate using the photoresist composition.
摘要翻译：光致抗蚀剂组合物包括至少一种完全保护的杯[4]间苯二酚和至少一种未保护的杯[4]间苯二酚的共混物，其中完全保护的杯[4]间苯二酚具有用酸不稳定保护基保护的酚基; 光致酸发生器; 和溶剂，并且其中所述共混物和光致酸产生剂可溶于溶剂中。还公开了使用光致抗蚀剂组合物在衬底上产生抗蚀剂图像的方法。

5. 发明授权

US07828986B2 Forming surface features using self-assembling masks 有权
标题翻译：使用自组装掩模形成表面特征
公开(公告)号：US07828986B2
公开(公告)日：2010-11-09
申请号：US11926722
申请日：2007-10-29
申请人： Joy Cheng , Mark W. Hart , Hiroshi Ito , Ho-Cheol Kim , Robert Miller
发明人： Joy Cheng , Mark W. Hart , Hiroshi Ito , Ho-Cheol Kim , Robert Miller
IPC分类号： B44C1/22 , H01L21/302
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , H01L21/0271 , H01L21/0332
摘要： A method. A combination is provided of a block copolymer and additional material. The copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. The first polymer includes polystyrene and the second polymer includes poly(ethylene oxide). A first layer including polydimethylglutarimide is adhered onto a surface of a substrate including a dielectric coated silicon wafer. A film is formed of the combination directly onto a surface of the first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film and the first layer are simultaneously etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. Portions of the film are removed. Features remain on the surface of the first layer.
摘要翻译：一个方法。提供了一种嵌段共聚物和另外的材料的组合。共聚物包括共价键合到第二聚合物的第二嵌段的第一聚合物的第一嵌段。附加材料与第一聚合物混溶。第一聚合物包括聚苯乙烯，第二聚合物包括聚（环氧乙烷）。包括聚二甲基戊二酰亚胺的第一层粘附到包括电介质涂覆的硅晶片的基材的表面上。该组合物直接由第一层的表面形成。附加材料的纳米结构在第一聚合物嵌段内自组装。同时蚀刻膜和第一层。纳米结构的蚀刻速率低于嵌段共聚物的蚀刻速率，并且低于第一层的蚀刻速率。部分电影被删除。特征保留在第一层的表面上。

6. 发明申请

US20090107950A1 FORMING SURFACE FEATURES USING SELF-ASSEMBLING MASKS 有权
标题翻译：使用自组装面膜形成表面特征
公开(公告)号：US20090107950A1
公开(公告)日：2009-04-30
申请号：US11926722
申请日：2007-10-29
申请人： Joy Cheng , Mark W. Hart , Hiroshi Ito , Ho-Cheol Kim , Robert Miller
发明人： Joy Cheng , Mark W. Hart , Hiroshi Ito , Ho-Cheol Kim , Robert Miller
IPC分类号： H01B13/00
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , H01L21/0271 , H01L21/0332
摘要： A method for producing surface features and an etch masking method. A combination is provided of a block copolymer and additional material. The block copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. A film is formed of the combination directly onto a surface of a first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film of the combination and the first layer are etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. The film is removed and features remain on the surface of the first layer. Also included is an etch masking method where the nanostructures mask portions of the first layer from said etchant.
摘要翻译：一种用于产生表面特征的方法和蚀刻掩模方法。提供了一种嵌段共聚物和另外的材料的组合。嵌段共聚物包括共价键合到第二聚合物的第二嵌段的第一聚合物的第一嵌段。附加材料与第一聚合物混溶。膜由直接形成在第一层的表面上。附加材料的纳米结构在第一聚合物嵌段内自组装。蚀刻组合和第一层的膜。纳米结构的蚀刻速率低于嵌段共聚物的蚀刻速率，并且低于第一层的蚀刻速率。去除膜并且特征保留在第一层的表面上。还包括蚀刻掩模法，其中纳米结构掩盖了来自所述蚀刻剂的第一层的部分。

7. 发明申请

US20090107953A1 METHODS FOR FORMING SURFACE FEATURES USING SELF-ASSEMBLING MASKS 有权
标题翻译：使用自组装掩模形成表面特征的方法
公开(公告)号：US20090107953A1
公开(公告)日：2009-04-30
申请号：US12057565
申请日：2008-03-28
申请人： Joy Cheng , Mark W. Hart , Hiroshi Ito , Ho-Cheol Kim , Robert Miller
发明人： Joy Cheng , Mark W. Hart , Hiroshi Ito , Ho-Cheol Kim , Robert Miller
IPC分类号： C23F1/00
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , H01L21/0271 , H01L21/0332
摘要： A method for producing surface features and an etch masking method. A combination is provided of a block copolymer and additional material. The block copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. A film is formed of the combination directly onto a surface of a first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film of the combination and the first layer are etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. The film is removed and features remain on the surface of the first layer. Also included is an etch masking method where the nanostructures mask portions of the first layer from said etchant.
摘要翻译：一种用于产生表面特征的方法和蚀刻掩模方法。提供了一种嵌段共聚物和另外的材料的组合。嵌段共聚物包括共价键合到第二聚合物的第二嵌段的第一聚合物的第一嵌段。附加材料与第一聚合物混溶。膜由直接形成在第一层的表面上。附加材料的纳米结构在第一聚合物嵌段内自组装。蚀刻组合和第一层的膜。纳米结构的蚀刻速率低于嵌段共聚物的蚀刻速率，并且低于第一层的蚀刻速率。去除膜并且特征保留在第一层的表面上。还包括蚀刻掩模法，其中纳米结构掩盖了来自所述蚀刻剂的第一层的部分。

8. 发明授权

US08529779B2 Methods for forming surface features using self-assembling masks 有权
标题翻译：使用自组装掩模形成表面特征的方法
公开(公告)号：US08529779B2
公开(公告)日：2013-09-10
申请号：US12057565
申请日：2008-03-28
申请人： Joy Cheng , Mark W. Hart , Hiroshi Ito , Ho-Cheol Kim , Robert Miller
发明人： Joy Cheng , Mark W. Hart , Hiroshi Ito , Ho-Cheol Kim , Robert Miller
IPC分类号： B31D3/00 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/302
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , H01L21/0271 , H01L21/0332
摘要： A method for producing surface features and an etch masking method. A combination is provided of a block copolymer and additional material. The block copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. A film is formed of the combination directly onto a surface of a first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film of the combination and the first layer are etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. The film is removed and features remain on the surface of the first layer. Also included is an etch masking method where the nanostructures mask portions of the first layer from said etchant.
摘要翻译：一种用于产生表面特征的方法和蚀刻掩模方法。提供了一种嵌段共聚物和另外的材料的组合。嵌段共聚物包括共价键合到第二聚合物的第二嵌段的第一聚合物的第一嵌段。附加材料与第一聚合物混溶。膜由直接形成在第一层的表面上。附加材料的纳米结构在第一聚合物嵌段内自组装。蚀刻组合和第一层的膜。纳米结构的蚀刻速率低于嵌段共聚物的蚀刻速率，并且低于第一层的蚀刻速率。去除膜并且特征保留在第一层的表面上。还包括蚀刻掩模法，其中纳米结构掩盖了来自所述蚀刻剂的第一层的部分。

9. 发明授权

US06794110B2 Polymer blend and associated methods of preparation and use 失效
标题翻译：聚合物混合物及相关的制备和使用方法
公开(公告)号：US06794110B2
公开(公告)日：2004-09-21
申请号：US10090646
申请日：2002-03-04
申请人： Gregory Breyta , Hiroshi Ito , Hoa D. Truong
发明人： Gregory Breyta , Hiroshi Ito , Hoa D. Truong
IPC分类号： G03F7004
CPC分类号： G03F7/0395 , C08L33/16 , C08L2205/02 , G03F7/0046 , G03F7/0382 , Y10S430/108 , C08L2666/04
摘要： A polymer blend is provided for use in a lithographic photoresist composition, particularly a chemical amplification photoresist. In a preferred embodiment, the polymer blend is substantially transparent to deep ultraviolet radiation, i.e., radiation of a wavelength less than 250 nm, including wavelengths of 157 nm, 193 nm and 248 nm, and has improved sensitivity and resolution. Processes for preparing and using the polymer blend are also provided, as are lithographic photoresist compositions that contain the polymer blend.
摘要翻译：提供聚合物共混物用于光刻抗蚀剂组合物，特别是化学扩增光致抗蚀剂。在优选的实施方案中，聚合物共混物对深紫外辐射（即，波长小于250nm，包括157nm，193nm和248nm的波长）的辐射基本上是透明的，并且具有改进的灵敏度和分辨率。还提供了制备和使用聚合物共混物的方法，以及含有聚合物共混物的平版光刻胶组合物。

10. 发明授权

US09674511B2 Stereoscopic image display device 有权
公开(公告)号：US09674511B2
公开(公告)日：2017-06-06
申请号：US13825507
申请日：2011-03-15
申请人： Hiroshi Ito
发明人： Hiroshi Ito
IPC分类号： H04N13/04 , G02B27/22
CPC分类号： H04N13/341 , G02B27/225 , G02B27/2264 , H04N13/32
摘要： The invention can provide a stereoscopic image display device, which achieves advantages of both a “glasses” device and a “naked-eye” device, while having a small size. When a right-eye image is displayed, a light blocking region forms on the left side of the center line, and when a left-eye image is displayed, a light blocking region forms on the right side of the center line. When the viewer is located in the regions, the right eye views the right-eye image, and the left eye views the left-eye image. Thus, even when the viewer faces stereoscopic display device with naked eyes, the viewer can view the stereoscopic image as long as the eyes of the viewer are located in the light blocking regions. The right and left images are mixed in the region other than the light blocking regions. However, multiple viewers can view the stereoscopic image when wearing the glasses.

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