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1. 发明申请

US20110249160A1 INDIUM TIN OXIDE GATE CHARGE COUPLED DEVICE 有权
标题翻译：印度氧化锡盖电荷耦合器件
公开(公告)号：US20110249160A1
公开(公告)日：2011-10-13
申请号：US12759472
申请日：2010-04-13
申请人： Joseph T. Smith , Bron R. Frias , Paul A. Tittel , Robert R. Shiskowski , Nathan Bluzer
发明人： Joseph T. Smith , Bron R. Frias , Paul A. Tittel , Robert R. Shiskowski , Nathan Bluzer
IPC分类号： H04N5/335 , H01L21/28 , H01L29/768
CPC分类号： H01L29/76891 , H01L21/3003
摘要： An Indium Tin Oxide (ITO) gate charge coupled device (CCD) is provided. The CCD device comprises a CCD structure having a substrate layer, an oxide layer over the substrate layer, a nitride layer over the oxide layer and a plurality of parallel ITO gates extending over the nitride layer. The CCD device further comprises a plurality of substantially similarly sized channel stop regions in the substrate layer that extend transversely relative to the ITO gates, such that a given pair of channel stop regions defining a pixel column of the CCD structure. The CCD device also comprises a plurality of vent openings that extend through the nitride layer along the plurality of substantially similarly sized channel stop regions to allow for penetration of hydrogen to at least one of the oxide layer and the substrate layer.
摘要翻译：提供氧化铟锡（ITO）栅极电荷耦合器件（CCD）。 CCD器件包括具有衬底层，衬底层上的氧化物层，氧化物层上的氮化物层和在氮化物层上延伸的多个平行ITO栅极的CCD结构。 CCD器件还包括在衬底层中相对于ITO栅极横向延伸的多个基本相似尺寸的通道阻挡区域，使得限定CCD结构的像素列的给定的一对通道阻挡区域。 CCD装置还包括多个通气孔，其沿着多个基本类似尺寸的通道停止区域延伸穿过氮化物层，以允许氢气渗透到氧化物层和衬底层中的至少一个。

2. 发明授权

US08345134B2 Indium tin oxide gate charge coupled device 有权
标题翻译：铟锡氧化物栅极电荷耦合器件
公开(公告)号：US08345134B2
公开(公告)日：2013-01-01
申请号：US12759472
申请日：2010-04-13
申请人： Joseph T. Smith , Bron R. Frias , Paul A. Tittel , Robert R. Shiskowski , Nathan Bluzer
发明人： Joseph T. Smith , Bron R. Frias , Paul A. Tittel , Robert R. Shiskowski , Nathan Bluzer
IPC分类号： H04N5/335 , H01L27/148 , H01L21/00
CPC分类号： H01L29/76891 , H01L21/3003
摘要： An Indium Tin Oxide (ITO) gate charge coupled device (CCD) is provided. The CCD device comprises a CCD structure having a substrate layer, an oxide layer over the substrate layer, a nitride layer over the oxide layer and a plurality of parallel ITO gates extending over the nitride layer. The CCD device further comprises a plurality of substantially similarly sized channel stop regions in the substrate layer that extend transversely relative to the ITO gates, such that a given pair of channel stop regions defining a pixel column of the CCD structure. The CCD device also comprises a plurality of vent openings that extend through the nitride layer along the plurality of substantially similarly sized channel stop regions to allow for penetration of hydrogen to at least one of the oxide layer and the substrate layer.
摘要翻译：提供氧化铟锡（ITO）栅极电荷耦合器件（CCD）。 CCD器件包括具有衬底层，衬底层上的氧化物层，氧化物层上的氮化物层和在氮化物层上延伸的多个平行ITO栅极的CCD结构。 CCD器件还包括在衬底层中相对于ITO栅极横向延伸的多个基本相似尺寸的通道阻挡区域，使得限定CCD结构的像素列的给定的一对通道阻挡区域。 CCD装置还包括多个通气孔，其沿着多个基本类似尺寸的通道停止区域延伸穿过氮化物层，以允许氢气渗透到氧化物层和衬底层中的至少一个。

3. 发明申请

US20090320913A1 LATERAL ULTRA-HIGH EFFICIENCY SOLAR CELL 有权
标题翻译：侧向超高效太阳能电池
公开(公告)号：US20090320913A1
公开(公告)日：2009-12-31
申请号：US12113257
申请日：2008-05-01
申请人： Joseph T. Smith , James N. Halvis , Thomas J. Knight
发明人： Joseph T. Smith , James N. Halvis , Thomas J. Knight
IPC分类号： H01L31/00 , H01L31/18
CPC分类号： H01L31/03048 , F24S23/00 , F24S23/31 , G02B3/0056 , G02B27/1086 , G02B27/123 , G02B27/141 , H01L31/0543 , H01L31/0547 , H01L31/0549 , Y02E10/52 , Y02E10/544 , Y02P70/521
摘要： A high-efficiency lateral multi-junction solar cell (C) includes ultra-low profile planar spectral band splitting micro-optics having a shortpass filter (48) reflecting desired frequencies of light (24) to a reflective mirror (58) combined with spectrally optimized photovoltaic (solar) cells.
摘要翻译：高效率横向多结太阳能电池（C）包括超低剖面平面光谱带分割微光学器件，其具有反射所需频率的光（24）到反射镜（58）的光通量滤波器（48）优化的光伏（太阳能）电池。

4. 发明申请

US20180286912A1 DUAL ACTIVE LAYER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20180286912A1
公开(公告)日：2018-10-04
申请号：US15997558
申请日：2018-06-04
申请人： Joseph T. Smith , Michael Marrs
发明人： Joseph T. Smith , Michael Marrs
IPC分类号： H01L27/146 , H01L29/786 , H01L21/683 , H01L27/12 , H01L29/66 , H01L31/105 , H01L31/0392 , G01N23/04 , H05K1/03
摘要： Some embodiments include an imaging system. The imaging system includes an active matrix pixel array having a flexible substrate and a pixel. The pixel includes a transistor over the flexible substrate, and the transistor includes multiple active layers having a first active layer and a second active layer over the first active layer. Further, the active matrix pixel array also includes a photodiode over the transistor, and the photodiode includes an N-type layer over the transistor, an I layer over the N-type layer, and a P-type layer over the I layer. Meanwhile, the imaging system also includes a flexible scintillator layer over the active matrix pixel array. Other embodiments of related systems and methods are also disclosed.

5. 发明申请

US20090194870A1 Method and Apparatus for Solid State Cooling System 有权
标题翻译：固态冷却系统的方法和装置
公开(公告)号：US20090194870A1
公开(公告)日：2009-08-06
申请号：US12023831
申请日：2008-01-31
申请人： Harvey C. Nathanson , Robert M. Young , Joseph T. Smith , Robert S. Howell , Archer S. Mitchell
发明人： Harvey C. Nathanson , Robert M. Young , Joseph T. Smith , Robert S. Howell , Archer S. Mitchell
IPC分类号： H01L23/34 , H01L35/00
CPC分类号： H01L35/00 , H01L23/34 , H01L2924/0002 , H01L2924/00
摘要： The disclosure relates to a Point Cooler based on a combination of principles, including large area, low current density PN junction cooling, and electron emission from heavily doped shallowly-depleted P tips. Using Junction Cooling rather than thermoelectric cooling enables an all silicon device to be made that favorably competes with the commercial thermoelectric cooling systems. Theoretical values of THOT/TCOLD of 6 or more (in contrast to about 1.5 for other solid state refrigerators) predict this single-stage solid state vacuum electronic cooler can approach 50K at light loading, significantly lower than conventional Bismuth Telluride based thermo electrics. The high Z values for PN junction cooling with wire connection and Tunnel heat extraction opens up solid state vibration-less form fit and function replacement cooling.
摘要翻译：本公开涉及基于原理组合的点冷却器，包括大面积，低电流密度PN结冷却和来自重掺杂的浅耗尽P尖端的电子发射。使用接合冷却而不是热电冷却使得所有的硅器件能够被制造成与商业热电冷却系统相竞争。 THOT / TCOLD的理论值为6以上（与其他固态冰箱的1.5倍相比）预测，这种单级固态真空电子式冷却器在轻载时可达到50K，明显低于传统的碲化铋基热电。通过电线连接和隧道热提取的PN结冷却的高Z值打开固态无振动形式配合和功能更换冷却。

6. 发明授权

US09991311B2 Dual active layer semiconductor device and method of manufacturing the same 有权
公开(公告)号：US09991311B2
公开(公告)日：2018-06-05
申请号：US14642563
申请日：2015-03-09
申请人： Joseph T. Smith , Michael Marrs
发明人： Joseph T. Smith , Michael Marrs
IPC分类号： H01L27/146 , H01L31/105 , H01L31/0392 , G01N23/04 , H01L21/683 , H01L29/66 , H01L29/786 , H05K1/03
CPC分类号： H01L27/14663 , G01N23/04 , H01L21/6835 , H01L27/1203 , H01L27/1218 , H01L27/1225 , H01L27/14636 , H01L29/66765 , H01L29/66969 , H01L29/78603 , H01L29/78648 , H01L29/7869 , H01L31/03926 , H01L31/105 , H01L2221/6835 , H01L2924/3025 , H05K1/0393 , H05K2201/0145 , H05K2201/0154 , H05K2201/068 , H05K2201/10128
摘要： Some embodiments include an imaging system. The imaging system includes an active matrix pixel array having a flexible substrate and a pixel. The pixel includes a transistor over the flexible substrate, and the transistor includes multiple active layers having a first active layer and a second active layer over the first active layer. Further, the active matrix pixel array also includes a photodiode over the transistor, and the photodiode includes an N-type layer over the transistor, an I layer over the N-type layer, and a P-type layer over the I layer. Meanwhile, the imaging system also includes a flexible scintillator layer over the active matrix pixel array. Other embodiments of related systems and methods are also disclosed.

7. 发明申请

US20150139397A1 IMAGING SYSTEM AND METHODS OF MANUFACTURING AND USING THE SAME 有权
标题翻译：成像系统及其制造方法和使用方法
公开(公告)号：US20150139397A1
公开(公告)日：2015-05-21
申请号：US14569381
申请日：2014-12-12
申请人： Joseph T. Smith , John Stowell
发明人： Joseph T. Smith , John Stowell
IPC分类号： G01T1/29 , H01L27/146 , G01N23/04
CPC分类号： G01T1/2928 , G01N23/04 , H01L27/14658 , H01L27/14685 , H01L27/1469 , H04N5/32
摘要： Some embodiments include an imaging system. The image sensor array includes multiple image sensor sheets configured in an array grid. Each image sensor sheet of the multiple image sensor sheets can include a flexible substrate layer, and the flexible substrate layer can include a first flexible substrate side and a second flexible substrate side opposite the first flexible substrate side. Meanwhile, each image sensor sheet of the multiple sensor sheets can include multiple image sensors over the first flexible substrate side, the multiple image sensors can include multiple flat panel image detectors configured in a sheet grid, and the image sensor array can include an approximately constant pixel pitch. Other embodiments of related systems and methods are also disclosed.
摘要翻译：一些实施例包括成像系统。图像传感器阵列包括以阵列网格配置的多个图像传感器片。多个图像传感器片的每个图像传感器片可以包括柔性基底层，并且柔性基底层可以包括第一柔性基底侧和与第一柔性基底侧相对的第二柔性基底侧。同时，多个传感器片的每个图像传感器片材可以包括在第一柔性基板侧上的多个图像传感器，多个图像传感器可以包括以片状网格构成的多个平板图像检测器，并且图像传感器阵列可以包括近似恒定的像素间距。还公开了相关系统和方法的其它实施例。

8. 发明授权

US08018053B2 Heat transfer device 有权
标题翻译：传热装置
公开(公告)号：US08018053B2
公开(公告)日：2011-09-13
申请号：US12023831
申请日：2008-01-31
申请人： Harvey C. Nathanson , Robert M. Young , Joseph T. Smith , Robert S. Howell , Archer S. Mitchell
发明人： Harvey C. Nathanson , Robert M. Young , Joseph T. Smith , Robert S. Howell , Archer S. Mitchell
IPC分类号： H01L23/34 , H01L35/00
CPC分类号： H01L35/00 , H01L23/34 , H01L2924/0002 , H01L2924/00
摘要： One example discloses a heat transfer device that can comprise a semiconductor material having a first region and a second region. The first region and the second region are doped to propel a charged carrier from the first region to the second region. The heat transfer device can also comprise an array of pointed tips thermoelectrically communicating with the second region. A heat sink faces the array, and a vacuum tunneling region is formed between the pointed tips and the heat sink. The heat transfer device further can further comprise a power source for biasing the heat sink with respect to the first region. The first region defines an N-type semiconductor material and the second region defines a P-type semiconductor material.
摘要翻译：一个实例公开了一种传热装置，其可以包括具有第一区域和第二区域的半导体材料。第一区域和第二区域被掺杂以将带电载体从第一区域推动到第二区域。传热装置还可以包括与第二区域热电连通的尖端的阵列。散热器面向阵列，并且在尖端和散热器之间形成真空隧道区域。传热装置还可以进一步包括用于相对于第一区域偏置散热器的电源。第一区域限定N型半导体材料，第二区域限定P型半导体材料。

9. 发明授权

US06762738B2 Pixel circuit with shared active regions 有权
公开(公告)号：US06762738B2
公开(公告)日：2004-07-13
申请号：US09966310
申请日：2001-09-28
申请人： Jerome A. Frazee , Russell Flack , Joseph T. Smith
发明人： Jerome A. Frazee , Russell Flack , Joseph T. Smith
IPC分类号： G06G336
CPC分类号： G02F1/13624 , G02F2001/136245
摘要： An LCD pixel device is provided of the type deployed in a matrix of pixels selectively energized by a plurality of row lines and plurality of column lines and wherein a video voltage is stored on at least one pixel capacitor and coupled to an image-generating device. First and second source regions are formed near the surface of a semiconductor substrate. A drain region is likewise formed in the substrate between the first and second source regions forming the channels of first and second field-effect-transistors. An insulating layer is formed on the substrate, and first and second gate electrodes are provided in the insulating layer between the first source region and the drain region and the second source region and the drain region respectively. First and second mirrors are provided on the surface of the insulating layer. Conductive interconnects formed in the insulating layer provide electrical coupling between the first and second transistors, the first and second capacitors, and the first and second mirrors, respectively.

10. 发明授权

US08153888B2 Lateral ultra-high efficiency solar cell 有权
标题翻译：横向超高效太阳能电池
公开(公告)号：US08153888B2
公开(公告)日：2012-04-10
申请号：US12113257
申请日：2008-05-01
申请人： Joseph T. Smith , James N. Halvis , Thomas J. Knight
发明人： Joseph T. Smith , James N. Halvis , Thomas J. Knight
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/03048 , F24S23/00 , F24S23/31 , G02B3/0056 , G02B27/1086 , G02B27/123 , G02B27/141 , H01L31/0543 , H01L31/0547 , H01L31/0549 , Y02E10/52 , Y02E10/544 , Y02P70/521
摘要： A high-efficiency lateral multi-junction solar cell (C) includes ultra-low profile planar spectral band splitting micro-optics having a shortpass filter (48) reflecting desired frequencies of light (24) to a reflective mirror (58) combined with spectrally optimized photovoltaic (solar) cells.
摘要翻译：高效率横向多结太阳能电池（C）包括超低剖面平面光谱带分割微光学器件，其具有反射所需频率的光（24）到反射镜（58）的光通量滤波器（48）优化的光伏（太阳能）电池。

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