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    • 5. 发明申请
    • Transistor-based biosensors having gate electrodes coated with receptor molecules
    • 基于晶体管的生物传感器具有涂覆有受体分子的栅电极
    • US20060102935A1
    • 2006-05-18
    • US10534455
    • 2003-11-11
    • Shlomo YitzchaikMicha SpiraJoseph Shappir
    • Shlomo YitzchaikMicha SpiraJoseph Shappir
    • H01L23/58
    • C07K17/14C12Q1/001G01N27/4145G01N33/551H01L2924/0002H01L2924/00
    • A device and method are presented for detecting analyte molecules in a medium. At least one FET (Field Effect Transistor) is provided being formed by at least one pair of source-drain electrodes and at least one gate electrode. The gate electrode is coated with a layer of receptor molecules that in the presence of said analytes catalyze a reaction that causes release of ions in a medium surrounding said receptor molecules. A monolayer of linker molecules is provided for linking said receptor molecules to said at least one gate such that a distance between the receptor molecules layer and the surface of the coated gate is smaller than 15A. In the prefered embodiments, the receptor molecules are enzymes (e.g. acetylcholine estarase) or peptides, and the analyte molecules are pesticides, herbicides and chemical pollutants of industrial origin.
    • 提出了用于检测介质中的分析物分子的装置和方法。 至少一个FET(场效应晶体管)被提供由至少一对源 - 漏电极和至少一个栅极电极形成。 栅电极涂覆有一层受体分子,所述受体分子在所述分析物存在下催化引起离子在所述受体分子周围的介质中释放的反应。 提供单层连接分子用于将所述受体分子与所述至少一个栅极连接,使得受体分子层与涂覆的栅极的表面之间的距离小于15A。 在优选的实施方案中,受体分子是酶(例如乙酰胆碱雌酮酶)或肽,分析物分子是工业起源的农药,除草剂和化学污染物。
    • 7. 发明授权
    • Buried interconnect structure for semiconductor devices
    • 半导体器件的掩埋互连结构
    • US5332913A
    • 1994-07-26
    • US811453
    • 1991-12-17
    • Joseph Shappir
    • Joseph Shappir
    • H01L23/522H01L21/336H01L21/768H01L21/8249H01L27/06H01L29/78H01L27/02H01L23/48H01L29/46H01L29/62
    • H01L29/66651H01L21/76889H01L21/76895
    • An improved density semiconductor device having a novel buried interconnect is described. The buried interconnect electrically connects electrical device regions on a semiconductor substrate such that other structures may directly overlie the buried interconnect but not be electrically connected to the electrically conductive portions of the interconnect. The interconnect is composed of a buried conductor and conductive segments. The conductive segments are electrically joined to the buried conductor so as to form an electrical pathway. First, a buried conductor is formed over an oxidized portion of a first field oxide. A layer of selective poly-epi silicon is then grown over the surface of the substrate. A nonconductive portion of selective poly-epi silicon is then formed over the buried conductor by oxidizing at least some of the selective poly-epi silicon layer. This nonconductive portion of the selective poly-epi silicon allows other structures to be formed over the buried conductor which are not in direct electrical contact with the buried interconnect. These other structures include elevated source/drain type structures, gates and silicidized or refractory metal local interconnects. These other structures may be selectively connected electrically to the conductive portions of the buried interconnect by the use of silicide segments or by the use of silicide segments connected electrically to titanium nitride pads. The conductive portion of the buried interconnect includes the buried conductor, and conductive segments which are formed by either silicon or silicide and which may include refractory metal pads. Silicide segments and titanium nitride pads are formed by depositing, annealing and etching a layer of refractory metal.
    • 描述了一种具有新型埋地互连的改进的密度半导体器件。 掩埋互连电连接半导体衬底上的电子器件区域,使得其它结构可以直接覆盖在掩埋互连上,而不与电连接到互连的导电部分。 互连由掩埋导体和导电段组成。 导电段电连接到掩埋导体,以形成电路径。 首先,在第一场氧化物的氧化部分上形成掩埋导体。 然后在衬底的表面上生长一层选择性多晶硅。 然后通过氧化至少一些选择性多晶硅层,在掩埋导体上形成选择性多晶硅的非导电部分。 选择性多晶硅的这种非导电部分允许在掩埋导体上形成其它结构,其不与埋入互连直接电接触。 这些其他结构包括升高的源/漏型结构,栅极和硅化或难熔金属局部互连。 这些其它结构可以通过使用硅化物部分或通过使用与氮化钛焊盘电连接的硅化物部分选择性地连接到掩埋互连的导电部分。 掩埋互连的导电部分包括埋入导体和由硅或硅化物形成并且可以包括难熔金属焊盘的导电段。 通过沉积,退火和蚀刻难熔金属层形成硅化物段和氮化钛焊盘。