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1. 发明授权

US08795545B2 Thermoelectric materials having porosity 有权
标题翻译：具有孔隙度的热电材料
公开(公告)号：US08795545B2
公开(公告)日：2014-08-05
申请号：US13436521
申请日：2012-03-30
申请人： Joseph P. Heremans , Christopher M. Jaworski , Vladimir Jovovic , Fred Harris
发明人： Joseph P. Heremans , Christopher M. Jaworski , Vladimir Jovovic , Fred Harris
IPC分类号： H01L35/16
CPC分类号： C04B35/547 , C04B38/0074 , C04B2235/40 , C04B2235/604 , C04B2235/6581 , C04B2235/77 , H01L35/16 , H01L35/34 , C04B38/0054 , C04B38/0061
摘要： A thermoelectric material and a method of making a thermoelectric material are provided. In certain embodiments, the thermoelectric material comprises at least 10 volume percent porosity. In some embodiments, the thermoelectric material has a zT greater than about 1.2 at a temperature of about 375 K. In some embodiments, the thermoelectric material comprises a topological thermoelectric material. In some embodiments, the thermoelectric material comprises a general composition of (Bi1-xSbx)u(Te1-ySey)w, wherein 0≦x≦1, 0≦y≦1, 1.8≦u≦2.2, 2.8≦w≦3.2. In further embodiments, the thermoelectric material includes a compound having at least one group IV element and at least one group VI element. In certain embodiments, the method includes providing a powder comprising a thermoelectric composition, pressing the powder, and sintering the powder to form the thermoelectric material.
摘要翻译：提供热电材料和制造热电材料的方法。在某些实施例中，热电材料包括至少10体积％的孔隙率。在一些实施例中，热电材料在约375K的温度下具有大于约1.2的zT。在一些实施例中，热电材料包括拓扑热电材料。在一些实施方案中，热电材料包括（Bi1-xSbx）u（Te1-ySey）w的一般组成，其中0和nlE; x和nlE; 1,0和nlE; y和nlE; 1.8,1.01; n和nlE; 2.2,2.8＆ 3.2。在另外的实施方案中，热电材料包括具有至少一个IV族元素和至少一个VI族元素的化合物。在某些实施方案中，该方法包括提供包含热电组合物的粉末，压制粉末，并烧结粉末以形成热电材料。

2. 发明申请

US20120248386A1 THERMOELECTRIC MATERIALS HAVING POROSITY 有权
标题翻译：具有多孔性的热电材料
公开(公告)号：US20120248386A1
公开(公告)日：2012-10-04
申请号：US13436521
申请日：2012-03-30
申请人： Joseph P. Heremans , Christopher M. Jaworski , Vladimir Jovovic , Fred Harris
发明人： Joseph P. Heremans , Christopher M. Jaworski , Vladimir Jovovic , Fred Harris
IPC分类号： H01B1/00 , C04B35/64 , H01B1/06
CPC分类号： C04B35/547 , C04B38/0074 , C04B2235/40 , C04B2235/604 , C04B2235/6581 , C04B2235/77 , H01L35/16 , H01L35/34 , C04B38/0054 , C04B38/0061
摘要： A thermoelectric material and a method of making a thermoelectric material are provided. In certain embodiments, the thermoelectric material comprises at least 10 volume percent porosity. In some embodiments, the thermoelectric material has a zT greater than about 1.2 at a temperature of about 375 K. In some embodiments, the thermoelectric material comprises a topological thermoelectric material. In some embodiments, the thermoelectric material comprises a general composition of (Bi1-xSbx)u(Te1-ySey)w, wherein 0≦x≦1, 0≦y≦1, 1.8≦u≦2.2, 2.8≦w≦3.2. In further embodiments, the thermoelectric material includes a compound having at least one group IV element and at least one group VI element. In certain embodiments, the method includes providing a powder comprising a thermoelectric composition, pressing the powder, and sintering the powder to form the thermoelectric material.
摘要翻译：提供热电材料和制造热电材料的方法。在某些实施例中，热电材料包括至少10体积％的孔隙率。在一些实施例中，热电材料在约375K的温度下具有大于约1.2的zT。在一些实施例中，热电材料包括拓扑热电材料。在一些实施方案中，热电材料包括（Bi1-xSbx）u（Te1-ySey）w的一般组成，其中0和nlE; x和nlE; 1,0和nlE; y和nlE; 1.8,1.01; n和nlE; 2.2,2.8＆ 3.2。在另外的实施方案中，热电材料包括具有至少一个IV族元素和至少一个VI族元素的化合物。在某些实施方案中，该方法包括提供包含热电组合物的粉末，压制粉末，并烧结粉末以形成热电材料。

3. 发明申请

US20090178700A1 THERMOELECTRIC FIGURE OF MERIT ENHANCEMENT BY MODIFICATION OF THE ELECTRONIC DENSITY OF STATES 审中-公开
标题翻译：通过修改国家电子密度的热电影增强图
公开(公告)号：US20090178700A1
公开(公告)日：2009-07-16
申请号：US12353153
申请日：2009-01-13
申请人： Joseph P. Heremans , Vladimir Jovovic
发明人： Joseph P. Heremans , Vladimir Jovovic
IPC分类号： H01L35/34 , H01B1/02
CPC分类号： C01B19/002 , B82Y30/00 , C01B19/007 , C01P2002/50 , C01P2004/64 , C01P2006/40 , H01L35/16
摘要： A thermoelectric material and a method of fabricating a thermoelectric material are provided. The thermoelectric material includes a doped compound of at least one Group IV element and at least one Group VI element. The compound is doped with at least one dopant selected from the group consisting of: at least one Group Ia element, at least one Group IIb element, at least one Group IIIa element, at least one Group IIIb element, at least one lanthanide element, and chromium. The at least one Group IV element is on a first sublattice of sites and the at least one Group VI element is on a second sublattice of sites, and the at least one Group IV element includes at least 95% of the first sublattice sites. The compound has a peak thermoelectric figure of merit ZT value greater than 0.7 at temperatures greater than 500 K.
摘要翻译：提供热电材料和制造热电材料的方法。热电材料包括至少一种IV族元素和至少一种VI族元素的掺杂化合物。该化合物掺杂有选自以下的至少一种掺杂剂：至少一种Ia族元素，至少一种IIb族元素，至少一种IIIa族元素，至少一种IIIb族元素，至少一种镧系元素，和铬。所述至少一个IV族元素位于第一子晶格上，并且所述至少一个第VI族元素位于第二子晶格上，并且所述至少一个IV族元素包含至少95％的第一亚晶格位点。该化合物在大于500K的温度下具有峰值热电值的ZT值大于0.7。

4. 发明申请

US20090235969A1 TERNARY THERMOELECTRIC MATERIALS AND METHODS OF FABRICATION 审中-公开
标题翻译：三元热电材料和制造方法
公开(公告)号：US20090235969A1
公开(公告)日：2009-09-24
申请号：US12359052
申请日：2009-01-23
申请人： Joseph P. Heremans , Vladimir Jovovic , Donald T. Morelli
发明人： Joseph P. Heremans , Vladimir Jovovic , Donald T. Morelli
IPC分类号： H01L35/12 , C22C5/06 , C22C12/00 , C22C28/00
CPC分类号： C01B19/007 , C01B19/002 , C01P2006/40 , H01L35/16 , H01L35/34 , Y02P20/129
摘要： A thermoelectric material and a method of fabricating a thermoelectric material are provided. The thermoelectric material includes a compound having an elemental formula of A1−xB1+yC2+z and having a coefficient of thermal expansion greater than 20 parts-per-million per degree Celsius in at least one direction at one or more operating temperatures. The A component of the compound includes at least one element selected from the group consisting of: at least one Group Ia element and at least one Group Ib element, the B component of the compound includes at least one element selected from the group consisting of: at least one Group V element and at least one Group VIII element, and the C component of the compound includes at least one Group VI element. In addition, x is between −0.2 and 0.3, y is between −0.2 and 0.4, and z is between −0.2 and 0.8. Furthermore, the A component includes no more than 95 atomic % silver when the B component includes antimony and the C component includes tellurium, the B component includes no more than 95 atomic % antimony when the A component includes silver and the C component includes tellurium, and the C component includes no more than 95 atomic % tellurium when the A component includes silver and the B component includes antimony.
摘要翻译：提供热电材料和制造热电材料的方法。热电材料包括具有A1-xB1 + yC2 + z的元素式的化合物，并且在一个或多个工作温度下，在至少一个方向上的热膨胀系数大于每百万摄氏度20百万分之一。化合物的A组分包括至少一种选自以下的元素：至少一种Ia族元素和至少一种Ib族元素，该化合物的B成分包括至少一种选自以下的元素：至少一个V族元素和至少一个VIII族元素，并且该化合物的C成分包括至少一个VI族元素。此外，x在-0.2和0.3之间，y在-0.2和0.4之间，z在-0.2和0.8之间。此外，当B成分含有锑，C成分含有碲时，A成分含有不超过95原子％的银，当A成分含有银时，B成分含有不超过95原子％的锑，C成分含有碲，当A成分含有银，B成分含有锑时，C成分含有不超过95原子％的碲。

5. 发明授权

US4978938A Magnetoresistor 失效
标题翻译：磁电阻
公开(公告)号：US4978938A
公开(公告)日：1990-12-18
申请号：US426245
申请日：1989-10-25
申请人： Dale L. Partin , Joseph P. Heremans , Donald T. Morelli
发明人： Dale L. Partin , Joseph P. Heremans , Donald T. Morelli
IPC分类号： G01R33/09 , H01L43/08
CPC分类号： H01L43/08 , G01R33/09
摘要： A magnetoresistive sensor that includes a very thin film of monocrystalline semiconductive material, having at least a moderate carrier mobility and no greater than a moderate carrier density. The device includes means for inducing or enhancing an accumulation layer adjacent the film outer surface. With film thicknesses below 5 micrometers, preferably below 3 micrometers, the presence of the accumulation layer can have a very noticeable effect. The unexpected improvement provides a significant apparent increase in mobility and conductivity of the semiconductive material, and an actual increase in magnetic sensitivity and temperature insensitivity. A method for making the sensor is also described.
摘要翻译：一种磁阻传感器，其包括非常薄的单晶半导体材料，至少具有适度的载流子迁移率且不大于中等载流子密度。该装置包括用于诱导或增强邻近胶片外表面的聚集层的装置。当膜厚度低于5微米，优选低于3微米时，积聚层的存在可以具有非常明显的效果。意想不到的改进提供了半导体材料的迁移率和电导率的显着增加，并且磁敏感性和温度不敏感性的实际增加。还描述了制造传感器的方法。

6. 发明授权

US4926154A Indium arsenide magnetoresistor 失效
标题翻译：砷化铟磁电阻
公开(公告)号：US4926154A
公开(公告)日：1990-05-15
申请号：US426260
申请日：1989-10-25
申请人： Joseph P. Heremans , Dale L. Partin
发明人： Joseph P. Heremans , Dale L. Partin
IPC分类号： H01L43/08
CPC分类号： H01L43/08
摘要： A magnetoresistive sensor that includes a thin film of nominally undoped monocrystalline indium arsenide. An indium arsenide film is described that appears to have a naturally occurring accumulation layer adjacent its outer surface. With film thickneses below 5 micrometers, preferably below 3 micrometers, the presence of the accumulation layer can have a very noticeable effect. A method for making the sensor is also described. The unexpected improvement provides a significant apparent increase in mobility and conductivity of the indium arsenide, and an actual increase in magnetic sensitivity and temperature insensitivity.
摘要翻译：磁阻传感器，其包括名义上未掺杂的单晶砷化铟的薄膜。描述了似乎在其外表面附近具有天然存在的积聚层的砷化铟膜。当膜厚度低于5微米，优选低于3微米时，积聚层的存在可以具有非常明显的效果。还描述了制造传感器的方法。意想不到的改进提供了砷化铟的迁移率和电导率的显着增加，并且磁敏感性和温度不敏感性的实际增加。

7. 发明授权

US4900687A Process for forming a magnetic field sensor 失效
标题翻译：用于形成磁场传感器的过程
公开(公告)号：US4900687A
公开(公告)日：1990-02-13
申请号：US331720
申请日：1989-04-03
申请人： Dale L. Partin , Joseph P. Heremans
发明人： Dale L. Partin , Joseph P. Heremans
IPC分类号： G01R33/06 , H01L29/82
CPC分类号： H01L29/82 , G01R33/06
摘要： A magnetic sensor is formed by a diode that includes a silicon element whose bulk is of high resistivity and low recombination velocity material and which includes spaced apart on its top surface n-type and p-type zones to which are provided electrical terminals. The element is treated to form at the top surface regions of high recombination velocity so located that when a voltage is applied between the electrical terminals to establish a flow of minority charge carriers between the p-type and n-type zones, such flow, in the absence of an applied magnetic field to be sensed, is little affected by the surface regions of high recombination velocity, but in the presence of any such field, is deflected into such surface regions and extinguished. Advantagously, the surface regions are formed by etching to form grooves and then ion implanting the grooved regions.
摘要翻译：磁传感器由二极管形成，该二极管包括本体具有高电阻率和低复合速度材料的硅元件，并且在其顶表面上包括间隔开的n型和p型区，其中设置有电端子。处理元件在高复合速度的顶表面区域处形成，使得当在电端子之间施加电压以在p型和n型区域之间建立少数载流子流时，没有要被感测的施加的磁场几乎不受高复合速度的表面区域的影响，但是在任何这样的场的存在下，被偏转到这样的表面区域中并且熄灭。通过蚀刻形成表面区域以形成凹槽，然后离子注入开槽区域。

8. 发明授权

US4843444A Magnetic field sensor 失效
标题翻译：磁场传感器
公开(公告)号：US4843444A
公开(公告)日：1989-06-27
申请号：US181758
申请日：1988-04-14
申请人： Dale L. Partin , Joseph P. Heremans
发明人： Dale L. Partin , Joseph P. Heremans
IPC分类号： G01R33/06 , H01L29/82
CPC分类号： H01L29/82 , G01R33/06
摘要： A magnetic sensor is formed by a diode that includes a silicon element whose bulk is of high resistivity and low recombination velocity material and which includes spaced apart on its top surface n-type and p-type zones to which are provided electrical terminals. The element is treated to form at the top surface regions of high recombination velocity so located that when a voltage is applied between the electrical terminals to establish a flow of minority charge carriers between the p-type and n-type zones, such flow, in the absence of an applied magnetic field to be sensed, is little affected by the surface regions of high recombination velocity, but in the presence of any such field, is deflected into such surface regions and extinguished. Advantageously, the surface regions are formed by etching to form grooves and then ion implanting the grooved regions.
摘要翻译：磁传感器由二极管形成，该二极管包括本体具有高电阻率和低复合速度材料的硅元件，并且在其顶表面上包括间隔开的n型和p型区，其中设置有电端子。处理元件在高复合速度的顶表面区域处形成，使得当在电端子之间施加电压以在p型和n型区域之间建立少数载流子流时，没有要被感测的施加的磁场几乎不受高复合速度的表面区域的影响，但是在任何这样的场的存在下，被偏转到这样的表面区域并熄灭。有利地，通过蚀刻形成表面区域以形成凹槽，然后离子注入开槽区域。

9. 发明授权

US5314547A Rare earth slab doping of group III-V compounds 失效
标题翻译：稀土板掺杂III-V族化合物
公开(公告)号：US5314547A
公开(公告)日：1994-05-24
申请号：US951995
申请日：1992-09-28
申请人： Joseph P. Heremans , Dale L. Partin , Christopher M. Thrush
发明人： Joseph P. Heremans , Dale L. Partin , Christopher M. Thrush
IPC分类号： H01L29/207 , H01L29/36 , H01L43/08 , H01L29/00
CPC分类号： H01L29/207 , H01L29/365 , H01L43/08
摘要： A semiconductor film is provided characterized by having high carrier mobility and carrier density. The semiconductor film is doped with the rare-earth element erbium so as to improve its temperature stability. The semiconductor film is thereby particularly suited for use as a magnetic field sensing device, such as a Hall effect sensor or magnetoresistor. The semiconductor film is formed from a narrow-gap Group III-V compound, preferably indium antimonide, which is n-doped with the erbium to provide an electron density sufficient to increase temperature stability. In particular, the semiconductor film is characterized by a nini-structure which is generated using a slab-doping technique. The slab-doping process encompasses the growing of alternating layers of doped and undoped layers of the Group III-V compound, with the doped layers being substantially thinner than the undoped layers, and preferably as thin as one atomic plane. The electron density establishes an average extrinsic electron density within the combined undoped and doped layers of the Group III-V compound. The density of erbium in the doped layers is preferably sufficient to yield an average extrinsic electron density of between about 1.times.10.sup.16 cm.sup.-3 and about 1.times.10.sup.18 cm.sup.-3, while also achieving a carrier mobility greater than about 30,000 cm.sup.-2 /V-s at room temperature.
摘要翻译：提供一种半导体膜，其特征在于具有高载流子迁移率和载流子密度。半导体膜掺杂有稀土元素铒，以提高其温度稳定性。因此，半导体膜特别适用于诸如霍尔效应传感器或磁敏电阻器的磁场感测装置。半导体膜由窄间隙III-V族化合物形成，优选锑化锑，其与铒掺杂，以提供足以提高温度稳定性的电子密度。特别地，半导体膜的特征在于使用平板掺杂技术产生的尼尼结构。板状掺杂工艺包括III-V族化合物的掺杂层和未掺杂层的交替层的生长，其中掺杂层基本上比未掺杂层更薄，并且优选地薄至一个原子平面。电子密度在III-V族化合物的组合未掺杂和掺杂层中建立了平均的外在电子密度。掺杂层中铒的密度优选足以产生约1×10 16 cm -3至约1×10 18 cm -3之间的平均非本征电子密度，同时在室温下也达到大于约30,000cm-2 / Vs的载流子迁移率。

10. 发明授权

US5081053A Method for forming a transistor having cubic boron nitride layer 失效
标题翻译：用于形成具有立方氮化硼层的晶体管的方法
公开(公告)号：US5081053A
公开(公告)日：1992-01-14
申请号：US597451
申请日：1990-10-15
申请人： Joseph P. Heremans , Gary L. Doll , Jeffrey A. Sell
发明人： Joseph P. Heremans , Gary L. Doll , Jeffrey A. Sell
IPC分类号： H01L21/28 , H01L21/336 , H01L21/762 , H01L29/786
CPC分类号： H01L29/66757 , H01L21/28158 , H01L21/7624 , H01L29/66772 , H01L29/78654 , Y10S148/113 , Y10S148/149 , Y10S438/932
摘要： A method for forming a transistor which may be suitable for high temperature application is provided. A single crystal silicon substrate has an overlaying layer of epitaxially grown cubic boron nitride in crystallographic registry with the silicon substrate. The cubic boron nitride is epitaxially grown using laser ablation techniques and provides an electrically resistive and thermally conductive barrier. An active layer of epitaxial silicon is then grown from the layer of cubic boron nitride, such that the overlaying layer of epitaxial silicon is in crystallographic registry with the layer of boron nitride which is in crystallographic registry with the underlying silicon substrate. Appropriately doped source and drain regions and a gate electrode are provided to form the transistor. A clean crystallographic lattice match between the cubic boron nitride and surrounding silicon is obtained, thereby minimizing any stresses due to a mismatch in lattice constants and permitting the overlaying silicon active layer to be extremely thin.
摘要翻译：提供了可适用于高温应用的形成晶体管的方法。单晶硅衬底具有与硅衬底结晶记录的外延生长立方氮化硼的覆盖层。使用激光烧蚀技术外延生长立方氮化硼，并提供电阻和导热屏障。然后从立方氮化硼层生长外延硅的有源层，使得外延硅的覆盖层与与下面的硅衬底结晶记录的氮化硼层结晶记录。提供适当掺杂的源极和漏极区域以及栅极电极以形成晶体管。获得立方氮化硼和周围硅之间的干净的晶格匹配，从而最小化由于晶格常数不匹配引起的任何应力，并允许覆盖硅活性层极薄。

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