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1. 发明授权

US4978938A Magnetoresistor 失效
标题翻译：磁电阻
公开(公告)号：US4978938A
公开(公告)日：1990-12-18
申请号：US426245
申请日：1989-10-25
申请人： Dale L. Partin , Joseph P. Heremans , Donald T. Morelli
发明人： Dale L. Partin , Joseph P. Heremans , Donald T. Morelli
IPC分类号： G01R33/09 , H01L43/08
CPC分类号： H01L43/08 , G01R33/09
摘要： A magnetoresistive sensor that includes a very thin film of monocrystalline semiconductive material, having at least a moderate carrier mobility and no greater than a moderate carrier density. The device includes means for inducing or enhancing an accumulation layer adjacent the film outer surface. With film thicknesses below 5 micrometers, preferably below 3 micrometers, the presence of the accumulation layer can have a very noticeable effect. The unexpected improvement provides a significant apparent increase in mobility and conductivity of the semiconductive material, and an actual increase in magnetic sensitivity and temperature insensitivity. A method for making the sensor is also described.
摘要翻译：一种磁阻传感器，其包括非常薄的单晶半导体材料，至少具有适度的载流子迁移率且不大于中等载流子密度。该装置包括用于诱导或增强邻近胶片外表面的聚集层的装置。当膜厚度低于5微米，优选低于3微米时，积聚层的存在可以具有非常明显的效果。意想不到的改进提供了半导体材料的迁移率和电导率的显着增加，并且磁敏感性和温度不敏感性的实际增加。还描述了制造传感器的方法。

2. 发明授权

US4926154A Indium arsenide magnetoresistor 失效
标题翻译：砷化铟磁电阻
公开(公告)号：US4926154A
公开(公告)日：1990-05-15
申请号：US426260
申请日：1989-10-25
申请人： Joseph P. Heremans , Dale L. Partin
发明人： Joseph P. Heremans , Dale L. Partin
IPC分类号： H01L43/08
CPC分类号： H01L43/08
摘要： A magnetoresistive sensor that includes a thin film of nominally undoped monocrystalline indium arsenide. An indium arsenide film is described that appears to have a naturally occurring accumulation layer adjacent its outer surface. With film thickneses below 5 micrometers, preferably below 3 micrometers, the presence of the accumulation layer can have a very noticeable effect. A method for making the sensor is also described. The unexpected improvement provides a significant apparent increase in mobility and conductivity of the indium arsenide, and an actual increase in magnetic sensitivity and temperature insensitivity.
摘要翻译：磁阻传感器，其包括名义上未掺杂的单晶砷化铟的薄膜。描述了似乎在其外表面附近具有天然存在的积聚层的砷化铟膜。当膜厚度低于5微米，优选低于3微米时，积聚层的存在可以具有非常明显的效果。还描述了制造传感器的方法。意想不到的改进提供了砷化铟的迁移率和电导率的显着增加，并且磁敏感性和温度不敏感性的实际增加。

3. 发明授权

US4900687A Process for forming a magnetic field sensor 失效
标题翻译：用于形成磁场传感器的过程
公开(公告)号：US4900687A
公开(公告)日：1990-02-13
申请号：US331720
申请日：1989-04-03
申请人： Dale L. Partin , Joseph P. Heremans
发明人： Dale L. Partin , Joseph P. Heremans
IPC分类号： G01R33/06 , H01L29/82
CPC分类号： H01L29/82 , G01R33/06
摘要： A magnetic sensor is formed by a diode that includes a silicon element whose bulk is of high resistivity and low recombination velocity material and which includes spaced apart on its top surface n-type and p-type zones to which are provided electrical terminals. The element is treated to form at the top surface regions of high recombination velocity so located that when a voltage is applied between the electrical terminals to establish a flow of minority charge carriers between the p-type and n-type zones, such flow, in the absence of an applied magnetic field to be sensed, is little affected by the surface regions of high recombination velocity, but in the presence of any such field, is deflected into such surface regions and extinguished. Advantagously, the surface regions are formed by etching to form grooves and then ion implanting the grooved regions.
摘要翻译：磁传感器由二极管形成，该二极管包括本体具有高电阻率和低复合速度材料的硅元件，并且在其顶表面上包括间隔开的n型和p型区，其中设置有电端子。处理元件在高复合速度的顶表面区域处形成，使得当在电端子之间施加电压以在p型和n型区域之间建立少数载流子流时，没有要被感测的施加的磁场几乎不受高复合速度的表面区域的影响，但是在任何这样的场的存在下，被偏转到这样的表面区域中并且熄灭。通过蚀刻形成表面区域以形成凹槽，然后离子注入开槽区域。

4. 发明授权

US4843444A Magnetic field sensor 失效
标题翻译：磁场传感器
公开(公告)号：US4843444A
公开(公告)日：1989-06-27
申请号：US181758
申请日：1988-04-14
申请人： Dale L. Partin , Joseph P. Heremans
发明人： Dale L. Partin , Joseph P. Heremans
IPC分类号： G01R33/06 , H01L29/82
CPC分类号： H01L29/82 , G01R33/06
摘要： A magnetic sensor is formed by a diode that includes a silicon element whose bulk is of high resistivity and low recombination velocity material and which includes spaced apart on its top surface n-type and p-type zones to which are provided electrical terminals. The element is treated to form at the top surface regions of high recombination velocity so located that when a voltage is applied between the electrical terminals to establish a flow of minority charge carriers between the p-type and n-type zones, such flow, in the absence of an applied magnetic field to be sensed, is little affected by the surface regions of high recombination velocity, but in the presence of any such field, is deflected into such surface regions and extinguished. Advantageously, the surface regions are formed by etching to form grooves and then ion implanting the grooved regions.
摘要翻译：磁传感器由二极管形成，该二极管包括本体具有高电阻率和低复合速度材料的硅元件，并且在其顶表面上包括间隔开的n型和p型区，其中设置有电端子。处理元件在高复合速度的顶表面区域处形成，使得当在电端子之间施加电压以在p型和n型区域之间建立少数载流子流时，没有要被感测的施加的磁场几乎不受高复合速度的表面区域的影响，但是在任何这样的场的存在下，被偏转到这样的表面区域并熄灭。有利地，通过蚀刻形成表面区域以形成凹槽，然后离子注入开槽区域。

5. 发明授权

US5314547A Rare earth slab doping of group III-V compounds 失效
标题翻译：稀土板掺杂III-V族化合物
公开(公告)号：US5314547A
公开(公告)日：1994-05-24
申请号：US951995
申请日：1992-09-28
申请人： Joseph P. Heremans , Dale L. Partin , Christopher M. Thrush
发明人： Joseph P. Heremans , Dale L. Partin , Christopher M. Thrush
IPC分类号： H01L29/207 , H01L29/36 , H01L43/08 , H01L29/00
CPC分类号： H01L29/207 , H01L29/365 , H01L43/08
摘要： A semiconductor film is provided characterized by having high carrier mobility and carrier density. The semiconductor film is doped with the rare-earth element erbium so as to improve its temperature stability. The semiconductor film is thereby particularly suited for use as a magnetic field sensing device, such as a Hall effect sensor or magnetoresistor. The semiconductor film is formed from a narrow-gap Group III-V compound, preferably indium antimonide, which is n-doped with the erbium to provide an electron density sufficient to increase temperature stability. In particular, the semiconductor film is characterized by a nini-structure which is generated using a slab-doping technique. The slab-doping process encompasses the growing of alternating layers of doped and undoped layers of the Group III-V compound, with the doped layers being substantially thinner than the undoped layers, and preferably as thin as one atomic plane. The electron density establishes an average extrinsic electron density within the combined undoped and doped layers of the Group III-V compound. The density of erbium in the doped layers is preferably sufficient to yield an average extrinsic electron density of between about 1.times.10.sup.16 cm.sup.-3 and about 1.times.10.sup.18 cm.sup.-3, while also achieving a carrier mobility greater than about 30,000 cm.sup.-2 /V-s at room temperature.
摘要翻译：提供一种半导体膜，其特征在于具有高载流子迁移率和载流子密度。半导体膜掺杂有稀土元素铒，以提高其温度稳定性。因此，半导体膜特别适用于诸如霍尔效应传感器或磁敏电阻器的磁场感测装置。半导体膜由窄间隙III-V族化合物形成，优选锑化锑，其与铒掺杂，以提供足以提高温度稳定性的电子密度。特别地，半导体膜的特征在于使用平板掺杂技术产生的尼尼结构。板状掺杂工艺包括III-V族化合物的掺杂层和未掺杂层的交替层的生长，其中掺杂层基本上比未掺杂层更薄，并且优选地薄至一个原子平面。电子密度在III-V族化合物的组合未掺杂和掺杂层中建立了平均的外在电子密度。掺杂层中铒的密度优选足以产生约1×10 16 cm -3至约1×10 18 cm -3之间的平均非本征电子密度，同时在室温下也达到大于约30,000cm-2 / Vs的载流子迁移率。

6. 发明授权

US4847666A Hot electron transistors 失效
标题翻译：热电子晶体管
公开(公告)号：US4847666A
公开(公告)日：1989-07-11
申请号：US135052
申请日：1987-12-17
申请人： Joseph P. Heremans , Dale L. Partin
发明人： Joseph P. Heremans , Dale L. Partin
IPC分类号： H01L29/24 , H01L29/267 , H01L29/76
CPC分类号： H01L29/245 , H01L29/24 , H01L29/267 , H01L29/7606
摘要： In one embodiment a hot electron transistor uses lead telluride as the host crystal. The desired layers of increased band gap to provide the needed heterojunctions at the emitting and collecting junctions are realized either by substitution of europium and selenium in the host crystal or by superlattices of PbTe-CdTe. Variations described use either a tunneling barrier, graded barrier or camel diode barrier are used at the emitting junction. Other embodiments use a bismuth-antimony semiconductor alloy for one or more of the layers of the crystal.
摘要翻译：在一个实施例中，热电子晶体管使用碲化铅作为主晶体。通过在主晶体中取代铕和硒或通过PbTe-CdTe的超晶格来实现在发射和收集结处提供所需的异质结所需的增加的带隙层。所描述的变化使用在发射结处的隧道势垒，梯度屏障或骆驼二极管屏障。其他实施例使用铋 - 锑半导体合金作为一个或多个晶体层。

7. 发明授权

US5491461A Magnetic field sensor on elemental semiconductor substrate with electric field reduction means 失效
标题翻译：具有电场减少装置的元素半导体衬底上的磁场传感器
公开(公告)号：US5491461A
公开(公告)日：1996-02-13
申请号：US239772
申请日：1994-05-09
申请人： Dale L. Partin , Joseph P. Heremans , Louis Green
发明人： Dale L. Partin , Joseph P. Heremans , Louis Green
IPC分类号： G01R33/06 , H01L43/10 , H01L43/00
CPC分类号： G01R33/06 , H01L27/22 , H01L43/08 , H01L43/10
摘要： A magnetic field sensor apparatus that comprises an active layer of indium antimonide or indium arsenide supported on an elemental semiconductor substrate. Magnetoresistor sensors of indium antimonide and indium arsenide active layers on silicon and germanium substrate wafers are described. Means are described for providing reduced electric fields and parasitic conduction in the elemental semiconductor substrate. The means includes unique device geometries and buffer layers between the active layers and the substrate wafers.
摘要翻译：一种磁场传感器装置，其包括负载在元素半导体衬底上的铟锑化物或砷化铟的活性层。描述了硅和锗衬底晶片上的锑化铟和砷化铟活性层的磁敏电阻传感器。描述了用于在元素半导体衬底中提供减小的电场和寄生导通的装置。该装置包括在有源层和衬底晶片之间的独特的器件几何形状和缓冲层。

8. 发明授权

US5153557A Magnetic field sensor contacts 失效
标题翻译：磁场传感器触点
公开(公告)号：US5153557A
公开(公告)日：1992-10-06
申请号：US654130
申请日：1991-01-28
申请人： Dale L. Partin , Joseph P. Heremans
发明人： Dale L. Partin , Joseph P. Heremans
IPC分类号： H01L43/02
CPC分类号： H01L43/02
摘要： A magnetic field sensor, such as a magnetoresistor, Hall effect device or magnetotransistor, comprising an active layer of indium antimonide on the surface of a substrate having a length substantially greater than its width. A conductive contact is on the active layer at each end thereof and a plurality of shorting bar contacts are on the active layer and spaced along the length of the active layer between the end contacts. The contacts are each of a thin layer of a highly conductive n-type conductivity semiconductor material which has a low sheet resistivity and a low contact resistance with the active layer. A layer of a conductive metal may be provided on the semiconductor material layer of the contact, and a thin layer of highly conductive n-type indium antimonide may be provided between the semiconductive material layer and the active layer.
摘要翻译：一种磁场传感器，例如磁电阻器，霍尔效应器件或磁电晶体管，其在衬底的表面上包括具有大于其宽度的长度的铟锑化物的活性层。导电触点在其两端的有源层上，并且多个短路棒触点在有源层上并且沿端接触件之间的有源层的长度间隔开。触点是具有低活性层的低电阻率和低接触电阻的高导电性n型导电性半导体材料的薄层。可以在接触的半导体材料层上提供导电金属层，并且可以在半导体材料层和有源层之间提供高导电性n型锑化铟的薄层。

9. 发明授权

US4747108A Lead-europium-selenide-telluride diode laser 失效
标题翻译：铅 - 铕 - 硒化碲化物二极管激光器
公开(公告)号：US4747108A
公开(公告)日：1988-05-24
申请号：US879881
申请日：1986-06-30
申请人： Dale L. Partin , Joseph P. Heremans
发明人： Dale L. Partin , Joseph P. Heremans
IPC分类号： H01S5/22 , H01S5/32 , H01S5/34 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/3222 , H01S5/34
摘要： A double heterojunction lead salt semiconductor diode laser having an optical cavity of PbEuSeTe alloy with a quantum well having reduced Eu concentration disposed to one side of the optical cavity, the optical cavity having a given lattice constant and index of refraction. The optical cavity is sandwiched between two PbEuSeTe alloy confinement layers that are mutually of opposite conductivity type and have substantially the same lattice constant as the optical cavity. A pn junction surface in the optical cavity and preferably on or adjacent the quantum well layer injects charge carriers into the optical cavity. The larger energy band gap between the quantum well layer and its adjacent sandwiching confinement layer strongly confines charge carriers of one type from recombining in the oppositely doped adjacent sandwiching layer. This results in a decreased threshold current (I.sub.th) and a higher maximum operating temperature.
摘要翻译：一种具有PbEuSeTe合金的光学腔的双异质结铅盐半导体二极管激光器，其具有设置在光腔的一侧的Eu浓度降低的量子阱，该光腔具有给定的晶格常数和折射率。光腔被夹在两个相互导电类型的PbEuSeTe合金限制层之间，并具有与光腔基本相同的晶格常数。在光腔中并且优选地在量子阱层上或其附近的pn结表面将电荷载流子注入到光腔中。量子阱层与其相邻夹层限制层之间的较大的能带间隙强制地限制了一种类型的电荷载体在相反掺杂的相邻夹层中的复合。这导致阈值电流（Ith）降低和最高工作温度升高。

10. 发明授权

US5184106A Magnetic field sensor with improved electron mobility 失效
标题翻译：具有改善电子迁移率的磁场传感器
公开(公告)号：US5184106A
公开(公告)日：1993-02-02
申请号：US646893
申请日：1991-01-28
申请人： Dale L. Partin , Joseph P. Heremans
发明人： Dale L. Partin , Joseph P. Heremans
IPC分类号： G01R33/09 , H01L43/10
CPC分类号： H01L43/10 , G01R33/09
摘要： A magnetic field sensor, such as a magnetoresistor, having improved electron mobility comprises a substrate of an insulating semiconductor material, such as gallium arsenide or indium phosphide, having on a surface thereof a narrow strip of a thin active film. The active film has a thin first layer of undoped or lightly doped high electron mobility semiconductor material, such as indium antimonide or indium arsenide, on the substrate surface, and a second layer of the semiconductor material, which may be thicker than the first layer, on the first layer. The second layer is at least partially doped n-type conductivity so as to have a high electron density. The second layer may be entirely of the n-type conductivity semiconductor material or a superlattice of alternating layers of n-type conductivity and intrinsic semiconductor materials or a superlattice of intrinsic semiconductor material and a ternary or quaternary alloy of the semiconductor material which is at least partially of n-type conductivity. A conductive contact is on the active film at the ends thereof. For a magnetoresistor, a plurality of conductive shorting bars are on and spaced along the strip of the active film material.
摘要翻译：具有改善的电子迁移率的诸如磁电阻的磁场传感器包括绝缘半导体材料的衬底，例如砷化镓或磷化铟，其表面上具有薄的活性薄膜条。有源膜在基板表面上具有薄的第一层未掺杂或轻掺杂的高电子迁移率半导体材料，例如锑化铟或砷化铟，以及可以比第一层厚的第二半导体材料层，在第一层。第二层是至少部分掺杂的n型导电性以具有高的电子密度。第二层可以完全是n型导电性半导体材料或n型导电性和本征半导体材料的交替层的超晶格或半导体材料的本征半导体材料的超晶格和至少是半导体材料的三元或四元合金部分为n型导电性。导电接触端在其活性膜上。对于磁电阻器，多个导电短路棒沿着有源膜材料的条状物在其上并间隔开。

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