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    • 2. 发明授权
    • Tapped surface acoustic wave delay line
    • 敲击表面声波延迟线
    • US4088969A
    • 1978-05-09
    • US788874
    • 1977-04-19
    • James D. CrowleyJoseph F. WellerThomas G. Giallorenzi
    • James D. CrowleyJoseph F. WellerThomas G. Giallorenzi
    • G10K11/36H03F13/00H03H9/42H03H9/30H01L45/02H03F3/04H03F3/55
    • H03F13/00G10K11/36H03H9/423
    • A tapped surface acoustic wave (SAW) delay line with time-resolved outputssing piezoelectric leaky wave coupling and bulk wave amplification, and having low loss characteristics. A solid piezoelectric semiconductor is placed adjacent to a solid piezoelectric substrate. A pulsed rf input signal is applied to interdigital transducers (IDT) on the substrate. The applied signal launches a SAW in the substrate in a direction parallel to the interface between the substrate and the piezoelectric semiconductor solid. Upon reaching the interface, the SAW is piezoelectrically leaky-wave coupled across an air gap to a bulk acoustic wave in the piezoelectric semiconductor. Reflections of the bulk wave occur at both surfaces of the piezoelectric semiconductor, and piezoelectrically couples back across the air gap to excite a SAW on the piezoelectric substrate. The resultant rf output includes the normal delayed SAW pulse and additional delayed and time-resolved pulses. The amplitude of the bulk wave may be increased using bulk wave amplification.
    • 具有时间分辨输出的抽头声表面波(SAW)延迟线,采用压电泄漏波耦合和体波放大,具有低损耗特性。 将固体压电半导体放置成与固体压电基板相邻。 脉冲rf输入信号被施加到基板上的指数间换能器(IDT)。 所施加的信号在平行于衬底和压电半导体固体之间的界面的方向上在衬底中发射SAW。 在到达界面时,SAW在压电半导体中横跨气隙压电泄漏波耦合到体声波。 体波的反射发生在压电半导体的两个表面,并且压电耦合回穿过气隙,以激发压电衬底上的SAW。 所得到的rf输出包括正常延迟的SAW脉冲和附加的延迟和时间分辨脉冲。 可以使用体波放大来增加体波的幅度。