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1. 发明申请

US20080265348A1 Method of Manufacturing an Image Sensor and Image Sensor 审中-公开
标题翻译：制作图像传感器和图像传感器的方法
公开(公告)号：US20080265348A1
公开(公告)日：2008-10-30
申请号：US11570248
申请日：2005-05-12
申请人： Joris Maas , Leendert De Bruin , Daniel Wilhelmus Elisabeth Verbugt , Nicolaas Johannes Anthonius Van Veen , Eric Cornelis Egbertus Van Grunsven , Gerardus Lubertus Jacobus Reuvers , Erik Harold Groot
发明人： Joris Maas , Leendert De Bruin , Daniel Wilhelmus Elisabeth Verbugt , Nicolaas Johannes Anthonius Van Veen , Eric Cornelis Egbertus Van Grunsven , Gerardus Lubertus Jacobus Reuvers , Erik Harold Groot
IPC分类号： H01L31/0232 , H01L21/86
CPC分类号： H01L31/02162 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14685 , H01L31/02327
摘要： A method of manufacturing a back-side (14) illuminated image sensor (1) is disclosed, comprising the steps of: starting with a wafer (2) having a first (3) and a second surface (4), providing light sensitive pixel regions (5) extending into the wafer (2) from the first surface (3), securing the wafer (2) onto a protective substrate (7) such that the first surface (3) faces the protective substrate, the wafer comprising a substrate of a first material (8) with an optical transparent layer (9) and a layer of semiconductor material (10), wherein the substrate (8) is selectively removed from the layer of semiconductor material by using the optical transparent layer (9) as stopping layer. For back-side illuminated image sensors, light has to transmit through the semiconductor layer and enter into the light sensitive pixel regions (5). In order to reduce absorption losses, it is very advantageous that the semiconductor layer (10) can be made relatively thin with a good uniformity. Because of the reduced thickness of the semiconductor layer, more light can enter into the light sensitive regions, resulting in an improved efficiency of the image sensor.
摘要翻译：公开了一种制造背面（14）照明图像传感器（1）的方法，包括以下步骤：从具有第一（3）和第二表面（4）的晶片（2）开始，提供光敏像素从所述第一表面（3）延伸到所述晶片（2）中的区域（5），将所述晶片（2）固定到保护衬底（7）上，使得所述第一表面（3）面向所述保护衬底，所述晶片包括衬底具有光学透明层（9）和半导体材料层（10）的第一材料（8），其中通过使用光学透明层（9）作为选择性地从半导体材料层中去除基板（8）停止层。对于背面照明图像传感器，光必须透过半导体层并进入光敏像素区域（5）。为了减少吸收损失，非常有利的是，半导体层（10）可以制成相对较薄并具有良好的均匀性。由于半导体层的厚度减小，更多的光可以进入光敏区域，从而提高了图像传感器的效率。

2. 发明申请

US20050230681A1 Image sensor, camera system comprising the image sensor and method of manufacturing such a device 审中-公开
标题翻译：图像传感器，包括图像传感器的照相机系统和制造这种装置的方法
公开(公告)号：US20050230681A1
公开(公告)日：2005-10-20
申请号：US10525475
申请日：2003-07-31
申请人： Hein Folkerts , Joris Maas , Daniel Wilhelmus Verbugt , Natalia Lokianova , Daniel Hermes , Willem Hoekstra , Adrianus Mierop
发明人： Hein Folkerts , Joris Maas , Daniel Wilhelmus Verbugt , Natalia Lokianova , Daniel Hermes , Willem Hoekstra , Adrianus Mierop
IPC分类号： H01L27/146 , H01L29/04 , H01L29/10 , H01L31/036
CPC分类号： H01L27/14609
摘要： An image sensor (1) having a semiconductor body (2) with a first conductivity type and having a surface (3), the surface being provided with a number of cells (4), a cell comprising a photosensitive element (5) and a reset transistor (6), the reset transistor comprising a source region (7), a drain region (8) and a gate region (9), the source region (7) and the drain region (8) having a second conductivity type opposite to the first conductivity type, the source region (7) of the reset transistor (6) being electrically connected to the photosensitive element (5). There is a well region (10) present which well region extends from the surface (3) into the semiconductor body (2) and extends at least partly below the gate region (9) and the well region has a first conductivity type. The source region (7) extends at least substantially in a doped region (11) of the photosensitive element (5), the doped region (11) having a second conductivity type. The reduction of the source-well junction area reduced the number of white pixels and fixed pattern noise. In the method of manufacturing the image sensor, the well region (10) is positioned partly below the gate region (9) so that there is a distance (13) between the highly doped source region (7) and the well region (10). The distance (13) increases the depletion layer width between the source and well junction, so that tunnel currents no longer dominate the leakage currents and the related number of white pixels and fixed pattern noise are reduced.
摘要翻译：一种具有第一导电类型并具有表面（3）的半导体本体（2）的图像传感器（1），所述表面设有多个单元（4），包括光敏元件（5）和复位晶体管（6），复位晶体管包括源极区（7），漏极区（8）和栅极区（9），源极区（7）和漏极区（8）具有相反的第二导电类型到第一导电类型，复位晶体管（6）的源极区（7）电连接到感光元件（5）。存在井区域（10），阱区域从表面（3）延伸到半导体本体（2）中并且至少部分地延伸到栅极区域（9）的下方，并且阱区域具有第一导电类型。源极区域（7）至少基本上在感光元件（5）的掺杂区域（11）中延伸，掺杂区域（11）具有第二导电类型。源 - 阱结面积的减少减少了白色像素的数量和固定的图案噪声。在制造图像传感器的方法中，阱区域（10）部分地位于栅极区域（9）的下方，使得在高掺杂源极区域（7）和阱区域（10）之间存在距离（13）。距离（13）增加了源极和阱结之间的耗尽层宽度，使得隧道电流不再主导泄漏电流，并且相关数量的白色像素和固定模式噪声减小。

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