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1. 发明申请

US20070158768A1 Electrical contacts formed of carbon nanotubes 审中-公开
标题翻译：由碳纳米管形成的电触点
公开(公告)号：US20070158768A1
公开(公告)日：2007-07-12
申请号：US11326944
申请日：2006-01-06
申请人： Jorg Pilchowski , George Skidmore
发明人： Jorg Pilchowski , George Skidmore
IPC分类号： H01L29/84 , H01L21/00
CPC分类号： H01H1/027 , B82Y10/00 , H01H1/0094 , H01H35/14 , H01H37/5418 , H01H2037/008
摘要： An apparatus and method for a micromachined mechanical switch device having first and second cooperating electrical switch contacts formed by respective first and second patterns of robust carbon nanotube thin film structures for forming intermittent electrical contact between the first and second conductors in response to the applied force urging the first and second cooperating patterns of carbon nanotube thin film structures together into momentary or substantially permanent physical contact.
摘要翻译：一种用于微加工机械开关装置的装置和方法，具有由相应的第一和第二图形的坚固的碳纳米管薄膜结构形成的第一和第二协作电开关触点，用于响应于所施加的力促进在第一和第二导体之间形成间歇性电接触碳纳米管薄膜结构的第一和第二配合图案一起变成瞬时或基本上永久的物理接触。

2. 发明授权

US07410901B2 Submicron device fabrication 失效
标题翻译：亚微米器件制造
公开(公告)号：US07410901B2
公开(公告)日：2008-08-12
申请号：US11380593
申请日：2006-04-27
申请人： Jorg Pilchowski
发明人： Jorg Pilchowski
IPC分类号： H01L21/461 , B81B7/02
CPC分类号： B81C1/00182 , Y10S977/887 , Y10S977/888 , Y10S977/89 , Y10S977/891 , Y10S977/892
摘要： A method for fabricating substrate material to include trenches and unreleased beams with submicron dimensions includes etching a first oxide layer on the substrate to define a first set of voids in the first oxide layer to expose the substrate. A second oxide layer is accreted to the first oxide layer to narrow the first set of voids to become a second set of voids on the substrate. A polysilicon layer is deposited over the second oxide layer, the first oxide layer and the substrate. A third set of voids is etched into the polysilicon layer. Further etching widens the third set of voids to define a fourth set of voids to expose the first oxide layer and the substrate. The first oxide layer and the substrate is deeply etched to define beams and trenches in the substrate.
摘要翻译：用于制造包括具有亚微米尺寸的沟槽和未释放光束的衬底材料的方法包括蚀刻衬底上的第一氧化物层以限定第一氧化物层中的第一组空隙以暴露衬底。第二氧化物层被增加到第一氧化物层以使第一组空隙变窄以成为衬底上的第二组空隙。在第二氧化物层，第一氧化物层和衬底上沉积多晶硅层。第三组空隙被蚀刻到多晶硅层中。进一步的蚀刻加宽了第三组空隙以限定出第四组空隙以露出第一氧化物层和衬底。深刻地蚀刻第一氧化物层和衬底以在衬底中限定束和沟槽。

3. 发明申请

US20050144789A1 Cutting blades having pointed tip, ultra-sharp edges, and ultra-flat faces 失效
标题翻译：切割刀片具有尖尖，超锐边和超平面
公开(公告)号：US20050144789A1
公开(公告)日：2005-07-07
申请号：US10746817
申请日：2003-12-24
申请人： Jorg Pilchowski
发明人： Jorg Pilchowski
IPC分类号： A61B17/00 , A61B17/32 , B26B9/00
CPC分类号： B26B9/00 , A61B17/3211 , A61B2017/00831
摘要： An apparatus and method for a cutting blade having a pointed tip and ultra-flat faces that intersect at ultra-sharp edges. The cutting blade is batch-fabricated on a standard {100} semiconductor mono-crystalline silicon wafer using conventional anisotropic wet etching silicon micromachining techniques as a pair of spaced-apart substantially parallel and planar top and bottom surfaces each formed in {100} planes of a {100} mono-crystalline silicon substrate with first and second mutually rotated cutting edges formed between the top and bottom surfaces of the substrate and substantially parallel thereto in adjacent {111} planes that form a first pointed tip at an intersection therebetween, and having third and fourth cutting edges formed between the top and bottom surfaces of the substrate and substantially parallel thereto in adjacent {110} planes with the third and fourth cutting edges forming different pointed intersections with the first and second mutually rotated cutting edges.
摘要翻译：一种用于切割刀片的装置和方法，其具有与超尖锐边缘相交的尖头和超平面。切割刀片在标准的{100}半导体单晶硅晶片上使用常规的各向异性湿蚀刻硅微加工技术分批制造，作为一对间隔开的基本上平行和平坦的顶部和底部表面，每个形成在{100} {100}单晶硅衬底，其具有形成在衬底的顶表面和底表面之间的第一和第二相互旋转的切削刃，并且在相邻的{111}平面中基本上平行于其形成在其间的交叉处的第一尖端，并具有第三和第四切削刃形成在基板的顶表面和底表面之间并且在相邻的{110}平面中基本上平行于其，第三和第四切削刃与第一和第二相互旋转的切削刃形成不同的尖锐的相交。

4. 发明授权

US07690254B2 Sensor with position-independent drive electrodes in multi-layer silicon on insulator substrate 有权
标题翻译：传感器与位置无关的驱动电极在多层硅绝缘体衬底上
公开(公告)号：US07690254B2
公开(公告)日：2010-04-06
申请号：US11829014
申请日：2007-07-26
申请人： Jorg Pilchowski , Uwe Pilchowski, legal representative , Michael J. Foster , Shifang Zhou
发明人： Jorg Pilchowski , Michael J. Foster , Shifang Zhou
IPC分类号： G01P15/125 , G01P9/04
CPC分类号： G01P15/0802 , G01C19/5719 , G01P1/023 , G01P15/125 , G01P15/131 , G01P2015/0814
摘要： A microelectromechanical system (MEMS) includes a housing defining an enclosed cavity, stator tines extending from the housing into the cavity, a MEMS device located within the cavity, the MEMS device including a proof mass and rotor tines extending from the proof mass, each rotor tine being positioned at a capacitive distance from a corresponding stator tine. The rotor tines include a first section extending a first distance from an insulating layer of the rotor tines and a second section extending a second distance from the insulating layer in an opposite direction from the first section. The stator tines include a first section extending a first distance from an insulating layer of the stator tines and a second section extending a second distance from the insulating layer in an opposite direction from the first section, the stator tine first distance being greater than the rotor tine first distance.
摘要翻译：微机电系统（MEMS）包括限定封闭空腔的壳体，从壳体延伸到空腔中的定子尖齿，位于空腔内的MEMS装置，MEMS装置包括从检验质量块延伸的检验质量块和转子齿，每个转子齿定位在与相应的定子齿的电容距离处。转子尖齿包括从转子尖齿的绝缘层延伸第一距离的第一部分和在与第一部分相反的方向上从绝缘层延伸第二距离的第二部分。定子齿包括从定子齿的绝缘层延伸第一距离的第一部分和在与第一部分相反的方向上从绝缘层延伸第二距离的第二部分，定子齿第一距离大于转子第一距离。

5. 发明申请

US20090025477A1 SENSOR WITH POSITION-INDEPENDENT DRIVE ELECTRODES IN MULTI-LAYER SILICON ON INSULATOR SUBSTRATE 有权
标题翻译：具有位置独立驱动电极的传感器在绝缘体基板上的多层硅中
公开(公告)号：US20090025477A1
公开(公告)日：2009-01-29
申请号：US11829014
申请日：2007-07-26
申请人： Jorg Pilchowski , Uwe Pilchowski , Michael J. Foster , Shifang Zhou
发明人： Jorg Pilchowski , Uwe Pilchowski , Michael J. Foster , Shifang Zhou
IPC分类号： G01P15/00
CPC分类号： G01P15/0802 , G01C19/5719 , G01P1/023 , G01P15/125 , G01P15/131 , G01P2015/0814
摘要： A micoroelectromechanical system (MEMS) includes a housing defining an enclosed cavity, stator tines extending from the housing into the cavity, a MEMS device located within the cavity, the MEMS device including a proof mass and rotor tines extending from the proof mass, each rotor tine being positioned at a capacitive distance from a corresponding stator tine. The rotor tines include a first section extending a first distance from an insulating layer of the rotor tines and a second section extending a second distance from the insulating layer in an opposite direction from the first section. The stator tines include a first section extending a first distance from an insulating layer of the stator tines and a second section extending a second distance from the insulating layer in an opposite direction from the first section, the stator tine first distance being greater than the rotor tine first distance.
摘要翻译：微电子机械系统（MEMS）包括限定封闭空腔的壳体，从壳体延伸到空腔中的定子尖齿，位于空腔内的MEMS装置，MEMS装置包括从检验质量块延伸的检测质量块和转子齿，每个转子齿定位在与相应的定子齿的电容距离处。转子尖齿包括从转子尖齿的绝缘层延伸第一距离的第一部分和在与第一部分相反的方向上从绝缘层延伸第二距离的第二部分。定子齿包括从定子齿的绝缘层延伸第一距离的第一部分和在与第一部分相反的方向上从绝缘层延伸第二距离的第二部分，定子齿第一距离大于转子第一距离。

6. 发明申请

US20080032501A1 SILICON ON METAL FOR MEMS DEVICES 审中-公开
标题翻译：用于MEMS器件的金属硅
公开(公告)号：US20080032501A1
公开(公告)日：2008-02-07
申请号：US11459307
申请日：2006-07-21
申请人： Jonathan L. Klein , Jorg Pilchowski
发明人： Jonathan L. Klein , Jorg Pilchowski
IPC分类号： H01L21/44
CPC分类号： B81C1/00579 , B81C2201/0107 , B81C2201/014
摘要： Micro-electromechanical systems (MEMS) pre-fabrication products and methods for forming MEMS devices using silicon-on-metal (SOM) wafers. An embodiment of a method may include the steps of bonding a patterned SOM wafer to a cover wafer, thinning the handle layer of the SOM wafer, selectively removing the exposed metal layer, and either continuing with final metallization or cover bonding to the back of the active layer.
摘要翻译：微机电系统（MEMS）预制产品和使用金属硅（SOM）晶片形成MEMS器件的方法。方法的一个实施例可以包括以下步骤：将图案化的SOM晶片结合到覆盖晶片，使SOM晶片的手柄层变薄，选择性地去除暴露的金属层，并且继续进行最后的金属化或覆盖粘合到活动层

7. 发明申请

US20070254487A1 SUBMICRON DEVICE FABRICATION 失效
标题翻译： SUBMICRON设备制造
公开(公告)号：US20070254487A1
公开(公告)日：2007-11-01
申请号：US11380593
申请日：2006-04-27
申请人： Jorg Pilchowski
发明人： Jorg Pilchowski
IPC分类号： H01L21/302
CPC分类号： B81C1/00182 , Y10S977/887 , Y10S977/888 , Y10S977/89 , Y10S977/891 , Y10S977/892
摘要： A method for fabricating substrate material to include trenches and unreleashed beams with submicron dimensions includes etching a first oxide layer on the substrate to define a first set of voids in the first oxide layer to expose the substrate. A second oxide layer is accreted to the first oxide layer to narrow the first set of voids to become a second set of voids on the substrate. A polysilicon layer is deposited over the second oxide layer, the first oxide layer and the substrate. A third set of voids is etched into the polysilicon layer. Further etching widens the third set of voids to define a fourth set of voids to expose the first oxide layer and the substrate. The first oxide layer and the substrate is deeply etched to define beams and trenches in the substrate.
摘要翻译：用于制造包括具有亚微米尺寸的沟槽和未充分发光的光束的衬底材料的方法包括蚀刻衬底上的第一氧化物层以限定第一氧化物层中的第一组空隙以暴露衬底。第二氧化物层被增加到第一氧化物层以使第一组空隙变窄以成为衬底上的第二组空隙。在第二氧化物层，第一氧化物层和衬底上沉积多晶硅层。第三组空隙被蚀刻到多晶硅层中。进一步的蚀刻加宽了第三组空隙以限定出第四组空隙以露出第一氧化物层和衬底。深刻地蚀刻第一氧化物层和衬底以在衬底中限定束和沟槽。

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