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1. 发明授权

US09985200B2 Magnetic memory devices including oxidized non-magnetic patterns with non-metallic elements and methods of fabricating the same 有权
公开(公告)号：US09985200B2
公开(公告)日：2018-05-29
申请号：US15603999
申请日：2017-05-24
申请人： Joonmyoung Lee , Whankyun Kim , Eunsun Noh
发明人： Joonmyoung Lee , Whankyun Kim , Eunsun Noh
IPC分类号： H01L43/08 , H01L43/02 , H01L43/10 , H01L43/12 , G11C11/16 , H01L43/06 , H01L43/04 , H01L43/14 , H01L27/11507 , H01L27/11502 , H01L27/22 , G11B5/39
CPC分类号： H01L43/02 , G11B5/3909 , G11C11/16 , G11C11/161 , H01L27/11502 , H01L27/11507 , H01L27/22 , H01L27/222 , H01L43/04 , H01L43/06 , H01L43/065 , H01L43/08 , H01L43/10 , H01L43/12 , H01L43/14
摘要： A magnetic memory device can include a first electrode and a first magnetic structure that is spaced apart from the first electrode, where the first magnetic structure can include a magnetic pattern therein. An oxidized non-magnetic pattern can be located between the first magnetic structure and the first electrode, where the oxidized non-magnetic pattern can include a non-metallic element having a standard free energy of oxide formation that is less than about that of a standard free energy of oxide formation of Fe.

2. 发明授权

US09640755B2 Magnetic memory device and method of manufacturing the same 有权
公开(公告)号：US09640755B2
公开(公告)日：2017-05-02
申请号：US14794801
申请日：2015-07-08
申请人： Joonmyoung Lee , Kwangseok Kim , Ki Woong Kim , Whankyun Kim , Sang Hwan Park
发明人： Joonmyoung Lee , Kwangseok Kim , Ki Woong Kim , Whankyun Kim , Sang Hwan Park
IPC分类号： H01L43/12 , H01L43/08 , H01L27/22
CPC分类号： H01L43/02 , G11C11/161 , H01L27/222 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A magnetic memory device includes a reference magnetic pattern having a magnetization direction fixed in one direction, a free magnetic pattern having a changeable magnetization direction, and a tunnel barrier pattern disposed between the free and reference magnetic patterns. The free magnetic pattern has a first surface being in contact with the tunnel barrier pattern and a second surface opposite to the first surface. The magnetic memory device further includes a sub-oxide pattern disposed on the second surface of the free magnetic pattern, and a metal boride pattern disposed between the sub-oxide pattern and the second surface of the free magnetic pattern. The magnetization directions of the free and reference magnetic patterns are substantially perpendicular to the first surface of the free magnetic pattern.

3. 发明授权

US09276198B2 Magnetic memory devices 有权
标题翻译：磁存储器件
公开(公告)号：US09276198B2
公开(公告)日：2016-03-01
申请号：US13967340
申请日：2013-08-14
申请人： Woo Chang Lim , Sangyong Kim , Whankyun Kim , Sang Hwan Park , Jeongheon Park
发明人： Woo Chang Lim , Sangyong Kim , Whankyun Kim , Sang Hwan Park , Jeongheon Park
IPC分类号： H01L43/08 , G11C11/16
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659
摘要： A magnetic memory device according to embodiments includes a first reference magnetic layer on a substrate, a second reference magnetic layer on the first reference magnetic layer, a free layer between the first reference magnetic layer and the second reference magnetic layer, a first tunnel barrier layer between the first reference magnetic layer and the free layer, and a second tunnel barrier layer between the second reference magnetic layer and the free layer. The first reference magnetic, second reference magnetic and free layers each have a magnetization direction substantially perpendicular to a top surface of the substrate. A resistance-area product (RA) value of the first tunnel barrier layer is greater than that of the second tunnel barrier layer.
摘要翻译：根据实施例的磁存储器件包括衬底上的第一参考磁性层，第一参考磁性层上的第二参考磁性层，第一参考磁性层和第二参考磁性层之间的自由层，第一隧道势垒层在第一参考磁性层和自由层之间，以及在第二参考磁性层和自由层之间的第二隧道势垒层。第一参考磁性，第二参考磁性和自由层各自具有基本上垂直于衬底顶表面的磁化方向。第一隧道势垒层的电阻面积乘积（RA）值大于第二隧道势垒层的电阻面积积（RA）值。

4. 发明授权

US08907436B2 Magnetic devices having perpendicular magnetic tunnel junction 有权
标题翻译：具有垂直磁隧道结的磁性装置
公开(公告)号：US08907436B2
公开(公告)日：2014-12-09
申请号：US13987150
申请日：2013-07-02
申请人： SeChung Oh , Ki Woong Kim , Younghyun Kim , Whankyun Kim , Sang Hwan Park
发明人： SeChung Oh , Ki Woong Kim , Younghyun Kim , Whankyun Kim , Sang Hwan Park
IPC分类号： H01L29/82 , H01F10/32 , B82Y25/00 , H01L43/08 , H01L43/02 , H01L27/22 , H01F10/12
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/161 , G11C11/1659 , H01F10/123 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/3295 , H01L27/224 , H01L27/226 , H01L27/228 , H01L43/08 , H01L43/10
摘要： Provided are magnetic memory devices with a perpendicular magnetic tunnel junction. The device includes a magnetic tunnel junction including a free layer structure, a pinned layer structure, and a tunnel barrier therebetween. The pinned layer structure may include a first magnetic layer having an intrinsic perpendicular magnetization property, a second magnetic layer having an intrinsic in-plane magnetization property, and an exchange coupling layer interposed between the first and second magnetic layers. The exchange coupling layer may have a thickness maximizing an antiferromagnetic exchange coupling between the first and second magnetic layers, and the second magnetic layer may exhibit a perpendicular magnetization direction, due at least in part to the antiferromagnetic exchange coupling with the first magnetic layer.
摘要翻译：提供了具有垂直磁性隧道结的磁存储器件。该装置包括一个包括自由层结构，钉扎层结构和在它们之间的隧道屏障的磁性隧道结。被钉扎层结构可以包括具有固有垂直磁化特性的第一磁性层，具有固有的面内磁化特性的第二磁性层以及置于第一和第二磁性层之间的交换耦合层。交换耦合层可以具有最大化第一和第二磁性层之间的反铁磁交换耦合的厚度，并且由于至少部分地由于与第一磁性层的反铁磁交换耦合，第二磁性层可以呈现垂直的磁化方向。

5. 发明授权

US09299920B2 Magnetic memory devices with magnetic tunnel junctions 有权
标题翻译：具有磁性隧道结的磁存储器件
公开(公告)号：US09299920B2
公开(公告)日：2016-03-29
申请号：US14339480
申请日：2014-07-24
申请人： Younghyun Kim , Jae Hoon Kim , Juhyun Kim , Whankyun Kim
发明人： Younghyun Kim , Jae Hoon Kim , Juhyun Kim , Whankyun Kim
IPC分类号： H01L29/82 , H01L43/08
CPC分类号： H01L43/08 , G11C11/161
摘要： Provided is a magnetic memory device with a magnetic tunnel junction on a substrate. The magnetic tunnel junction may include a first magnetic structure and a second magnetic structure spaced apart from each other with a tunnel barrier interposed therebetween. When viewed in a cross-sectional view, a width of the tunnel barrier may be larger at an upper level thereof than at a lower level thereof.
摘要翻译：提供了一种在衬底上具有磁性隧道结的磁存储器件。磁性隧道结可以包括彼此间隔开的隧道势垒的第一磁性结构和第二磁性结构。当以横截面图观察时，隧道势垒的宽度在其较高水平处可能大于其较低水平。

6. 发明申请

US20150123223A1 MAGNETIC MEMORY DEVICES WITH MAGNETIC TUNNEL JUNCTIONS 有权
标题翻译：具有磁性隧道结的磁性记忆装置
公开(公告)号：US20150123223A1
公开(公告)日：2015-05-07
申请号：US14339480
申请日：2014-07-24
申请人： Younghyun Kim , Jae Hoon Kim , Juhyun Kim , Whankyun Kim
发明人： Younghyun Kim , Jae Hoon Kim , Juhyun Kim , Whankyun Kim
IPC分类号： H01L43/08 , H01L27/22 , H01L43/02
CPC分类号： H01L43/08 , G11C11/161
摘要： Provided is a magnetic memory device with a magnetic tunnel junction on a substrate. The magnetic tunnel junction may include a first magnetic structure and a second magnetic structure spaced apart from each other with a tunnel barrier interposed therebetween. When viewed in a cross-sectional view, a width of the tunnel barrier may be larger at an upper level thereof than at a lower level thereof.
摘要翻译：提供了一种在衬底上具有磁性隧道结的磁存储器件。磁性隧道结可以包括彼此间隔开的隧道势垒的第一磁性结构和第二磁性结构。当以横截面图观察时，隧道势垒的宽度在其较高水平处可能大于其较低水平。

7. 发明授权

US09397286B2 Magnetic memory devices having perpendicular magnetic tunnel structures therein 有权
标题翻译：其中具有垂直磁隧道结构的磁存储器件
公开(公告)号：US09397286B2
公开(公告)日：2016-07-19
申请号：US14473334
申请日：2014-08-29
申请人： Sangyong Kim , Whankyun Kim , Sechung Oh
发明人： Sangyong Kim , Whankyun Kim , Sechung Oh
IPC分类号： H01L29/82 , H01L43/08 , H01L43/02
CPC分类号： H01L43/02 , G11C11/161 , H01L43/08
摘要： Magnetic memory cells include a magnetic tunnel junction and a first electrode, which is electrically coupled to the magnetic tunnel junction by a first conductive structure. This conductive structure includes a blocking layer and a seed layer, which extends between the blocking layer and the magnetic tunnel junction. The blocking layer is formed as an amorphous metal compound. In some of the embodiments, the blocking layer is a thermally treated layer and an amorphous state of the blocking layer is maintained during and post thermal treatment.
摘要翻译：磁存储器单元包括磁性隧道结和第一电极，其通过第一导电结构电耦合到磁性隧道结。该导电结构包括在阻挡层和磁性隧道结之间延伸的阻挡层和种子层。阻挡层形成为无定形金属化合物。在一些实施例中，阻挡层是热处理层，并且在热处理期间和之后保持阻挡层的无定形状态。

8. 发明授权

US09324941B2 Semiconductor devices and methods for fabricating the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US09324941B2
公开(公告)日：2016-04-26
申请号：US14306976
申请日：2014-06-17
申请人： Whankyun Kim , Woojin Kim , Woo Chang Lim
发明人： Whankyun Kim , Woojin Kim , Woo Chang Lim
IPC分类号： H01L21/00 , H01L43/12 , C23C14/35 , H01L43/08 , C23C14/04 , H01J37/34 , H01L27/22
CPC分类号： H01L43/12 , C23C14/046 , C23C14/35 , H01J37/3408 , H01L27/228 , H01L43/08
摘要： A method of fabricating a semiconductor device includes providing a wafer in a chamber of a point-cusp magnetron physical vapor deposition (PCM-PVD) apparatus, the chamber including a metal target. The method further includes providing an inert gas and a reactive gas in the chamber and forming an amorphous conductive layer on the wafer by reacting the reactive gas with a metal atom separated from the metal target by the inert gas.
摘要翻译：制造半导体器件的方法包括在点尖磁控管物理气相沉积（PCM-PVD）设备的腔室中提供晶片，所述腔室包括金属靶。该方法还包括在室中提供惰性气体和反应性气体，并通过使惰性气体与金属靶分离的金属原子反应而在晶片上形成非晶形导电层。

9. 发明申请

US20130307102A1 Magnetic devices having perpendicular magnetic tunnel junction 有权
公开(公告)号：US20130307102A1
公开(公告)日：2013-11-21
申请号：US13987150
申请日：2013-07-02
申请人： Sechung Oh , Ki Woong Kim , Younghyun Kim , Whankyun Kim , Sang Hwan Park
发明人： Sechung Oh , Ki Woong Kim , Younghyun Kim , Whankyun Kim , Sang Hwan Park
IPC分类号： H01L43/02
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/161 , G11C11/1659 , H01F10/123 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/3295 , H01L27/224 , H01L27/226 , H01L27/228 , H01L43/08 , H01L43/10
摘要： Provided are magnetic memory devices with a perpendicular magnetic tunnel junction. The device includes a magnetic tunnel junction including a free layer structure, a pinned layer structure, and a tunnel barrier therebetween. The pinned layer structure may include a first magnetic layer having an intrinsic perpendicular magnetization property, a second magnetic layer having an intrinsic in-plane magnetization property, and an exchange coupling layer interposed between the first and second magnetic layers. The exchange coupling layer may have a thickness maximizing an antiferromagnetic exchange coupling between the first and second magnetic layers, and the second magnetic layer may exhibit a perpendicular magnetization direction, due at least in part to the antiferromagnetic exchange coupling with the first magnetic layer.

10. 发明申请

US20160301000A1 Magnetic Memory Devices Having Perpendicular Magnetic Tunnel Structures Therein 审中-公开
标题翻译：具有垂直磁隧道结构的磁存储器件
公开(公告)号：US20160301000A1
公开(公告)日：2016-10-13
申请号：US15185693
申请日：2016-06-17
申请人： Sangyong Kim , Whankyun Kim , Sechung Oh
发明人： Sangyong Kim , Whankyun Kim , Sechung Oh
IPC分类号： H01L43/02 , H01L43/08
CPC分类号： H01L43/02 , G11C11/161 , H01L43/08
摘要： Magnetic memory cells include a magnetic tunnel junction and a first electrode, which is electrically coupled to the magnetic tunnel junction by a first conductive structure. This conductive structure includes a blocking layer and a seed layer, which extends between the blocking layer and the magnetic tunnel junction. The blocking layer is formed as an amorphous metal compound. In some of the embodiments, the blocking layer is a thermally treated layer and an amorphous state of the blocking layer is maintained during and post thermal treatment.
摘要翻译：磁存储器单元包括磁性隧道结和第一电极，其通过第一导电结构电耦合到磁性隧道结。该导电结构包括在阻挡层和磁性隧道结之间延伸的阻挡层和种子层。阻挡层形成为无定形金属化合物。在一些实施例中，阻挡层是热处理层，并且在热处理期间和之后保持阻挡层的无定形状态。

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