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    • 4. 发明申请
    • Method of manufacturing liquid crystal display device
    • 制造液晶显示装置的方法
    • US20090104724A1
    • 2009-04-23
    • US12285509
    • 2008-10-07
    • Kye-Chan SongJeong Oh KimYoung Kwon Kang
    • Kye-Chan SongJeong Oh KimYoung Kwon Kang
    • G02F1/1333
    • G02F1/134363G02F2001/136231G02F2201/124G02F2201/40
    • A method of manufacturing a liquid crystal display device which includes pixel electrodes and common electrodes which are alternatively arranged in each pixel defined on a substrate, including the steps of: forming a conductive film on the substrate; forming a mask layer, of which etching selection ratio is different from the conductive layer, on the conductive layer; forming a photo-resist pattern of a fixed pattern on the mask layer; forming a mask pattern, which has an undercut shape to the photo-resist pattern, by etching the mask layer by use of the photo-resist pattern as an etching mask; removing the photo-resist pattern; and etching the conductive film by use of the mask pattern as an etching mask, to provide at least any one of the common electrode and the pixel electrode.
    • 一种制造液晶显示装置的方法,该液晶显示装置包括在基板上限定的每个像素中交替布置的像素电极和公共电极,包括以下步骤:在基板上形成导电膜; 在导电层上形成蚀刻选择比不同于导电层的掩模层; 在掩模层上形成固定图案的光刻胶图案; 通过使用光刻胶图案作为蚀刻掩模蚀刻掩模层,形成具有底切形状的光刻胶图案的掩模图案; 去除光刻胶图案; 并且通过使用掩模图案作为蚀刻掩模蚀刻导电膜,以提供公共电极和像素电极中的至少任一个。
    • 5. 发明申请
    • Method for fabricating a liquid crystal display device and an LCD device thereby
    • 由此制造液晶显示装置和LCD装置的方法
    • US20080123044A1
    • 2008-05-29
    • US11812949
    • 2007-06-22
    • Jae Young OhYoung Seung JeeJeong Oh KimSoopool Kim
    • Jae Young OhYoung Seung JeeJeong Oh KimSoopool Kim
    • G02F1/13
    • G02F1/136227G02F1/134363G02F2001/134372G02F2201/40
    • A method for fabricating a LCD having enhanced aperture ratio and brightness includes: forming a gate line, a gate electrode, a common electrode and a common line in a first mask process; depositing a gate insulating layer covering the gate line, the gate electrode and the common electrode; forming an active layer on the gate insulating layer, and an ohmic contact layer on the active layer in a second mask process; forming a data line, a source electrode, and a drain electrode facing the source electrode in a third mask process; depositing a protective layer over the data line, the source electrode and the drain electrode; forming a pixel contact hole in a fourth mask process; and forming a pixel electrode, wherein the pixel electrode is connected to the drain electrode through the pixel contact hole in a fifth mask process using a reverse tapered photo-resist pattern.
    • 一种制造具有增强的开口率和亮度的LCD的方法包括:在第一掩模处理中形成栅极线,栅电极,公共电极和公共线; 沉积覆盖栅极线,栅电极和公共电极的栅极绝缘层; 在栅极绝缘层上形成有源层,在第二掩模工艺中在有源层上形成欧姆接触层; 在第三掩模工艺中形成面对源电极的数据线,源电极和漏电极; 在数据线,源电极和漏电极上沉积保护层; 在第四掩模处理中形成像素接触孔; 以及形成像素电极,其中,在使用倒锥形光刻胶图案的第五掩模工艺中,像素电极通过像素接触孔连接到漏电极。
    • 7. 发明授权
    • Method for manufacturing thin film transistor substrate using maskless exposing device
    • 使用无掩模曝光装置制造薄膜晶体管基板的方法
    • US07494835B2
    • 2009-02-24
    • US11646482
    • 2006-12-28
    • Young Seung JeeSuhyuk KangJeong Oh Kim
    • Young Seung JeeSuhyuk KangJeong Oh Kim
    • H01L21/84
    • H01L27/1288H01L27/1214
    • A method for manufacturing a thin film transistor substrate using a maskless exposing device includes forming a data metal layer on a substrate having a gate pattern and common electrodes along with gate insulation layers, active layers, and ohmic contact layers for a thin film transistors; forming a photoresist on the data metal layer; exposing a first amount of light onto the photoresist at first regions, excluding a second region where data lines and thin film transistors are to be formed, by using a maskless exposing device; exposing a second amount of light onto the photoresist at third regions, where channels of the thin film transistors are to be formed, wherein the second amount of light is smaller than the first amount of light; and developing the first, second and third regions of the photoresist.
    • 使用无掩模曝光装置制造薄膜晶体管基板的方法包括在具有栅极图案和公共电极的基板上形成数据金属层以及用于薄膜晶体管的栅极绝缘层,有源层和欧姆接触层; 在数据金属层上形成光致抗蚀剂; 通过使用无掩模曝光装置,在除了要形成数据线和薄膜晶体管的第二区域之外的第一区域将第一量的光暴露在光致抗蚀剂上; 在要形成薄膜晶体管的通道的第三区域,在光致抗蚀剂上暴露第二量的光,其中第二量的光小于第一光量; 以及显影光致抗蚀剂的第一,第二和第三区域。
    • 8. 发明申请
    • METHOD FOR FABRICATING A LIQUID CRYSTAL DISPLAY DEVICE AND AN LCD DEVICE THEREBY
    • 制造液晶显示装置的方法及其液晶显示装置
    • US20110237149A1
    • 2011-09-29
    • US13153996
    • 2011-06-06
    • Jae Young OHYoung Seung JeeJeong Oh KimSoopool Kim
    • Jae Young OHYoung Seung JeeJeong Oh KimSoopool Kim
    • H01J9/00
    • G02F1/136227G02F1/134363G02F2001/134372G02F2201/40
    • A method for fabricating a LCD having enhanced aperture ratio and brightness includes: forming a gate line, a gate electrode, a common electrode and a common line in a first mask process; depositing a gate insulating layer covering the gate line, the gate electrode and the common electrode; forming an active layer on the gate insulating layer, and an ohmic contact layer on the active layer in a second mask process; forming a data line, a source electrode, and a drain electrode facing the source electrode in a third mask process; depositing a protective layer over the data line, the source electrode and the drain electrode; forming a pixel contact hole in a fourth mask process; and forming a pixel electrode, wherein the pixel electrode is connected to the drain electrode through the pixel contact hole in a fifth mask process using a reverse tapered photo-resist pattern.
    • 一种制造具有增强的开口率和亮度的LCD的方法包括:在第一掩模处理中形成栅极线,栅电极,公共电极和公共线; 沉积覆盖栅极线,栅电极和公共电极的栅极绝缘层; 在栅极绝缘层上形成有源层,在第二掩模工艺中在有源层上形成欧姆接触层; 在第三掩模工艺中形成面对源电极的数据线,源电极和漏电极; 在数据线,源电极和漏电极上沉积保护层; 在第四掩模处理中形成像素接触孔; 以及形成像素电极,其中,在使用倒锥形光刻胶图案的第五掩模工艺中,像素电极通过像素接触孔连接到漏电极。