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    • 1. 发明授权
    • MOS transistor having a T-shaped gate electrode
    • MOS晶体管具有T形栅电极
    • US07250655B2
    • 2007-07-31
    • US10659384
    • 2003-09-11
    • Geum-Jong BaeNae-In LeeHwa-Sung RheeSang-Su KimJung-II Lee
    • Geum-Jong BaeNae-In LeeHwa-Sung RheeSang-Su KimJung-II Lee
    • H01L29/76H01L29/94H01L31/062H01L31/113H01L31/119
    • H01L29/6653H01L21/28114H01L29/665H01L29/6656H01L29/7833
    • A MOS transistor having a T-shaped gate electrode and a method for fabricating the same are provided, wherein the MOS transistor includes a T-shaped gate electrode on a semiconductor substrate; an L-shaped lower spacer disposed at both sides of the gate electrode to cover a top surface of the semiconductor substrate; and low-, mid-, and high-concentration impurity regions formed in the semiconductor substrate of both sides of the gate electrode. The high-concentration impurity region is disposed in the semiconductor substrate next to the lower spacer and the mid-concentration impurity region is disposed between the high- and low-concentration impurity regions. A MOS transistor according to the present invention provides a decrease in a capacitance, a decrease in a channel length, and an increase in a cross-sectional area of the gate electrode. At the same time, the mid-concentration impurity region provides a decrease in a source/drain resistance Rsd.
    • 提供具有T形栅电极的MOS晶体管及其制造方法,其中MOS晶体管包括在半导体衬底上的T形栅电极; 设置在所述栅极电极的两侧以覆盖所述半导体衬底的顶表面的L形下间隔件; 以及形成在栅极两侧的半导体衬底中的低,中,高浓度杂质区。 高浓度杂质区设置在与下隔片相邻的半导体衬底中,并且中浓度杂质区设置在高浓度杂质区和低浓度杂质区之间。 根据本发明的MOS晶体管提供了电容的减小,沟道长度的减小以及栅电极的横截面面积的增加。 同时,中等浓度杂质区域提供了源极/漏极电阻R sd 的降低。
    • 6. 发明申请
    • Transflective Liquid Crystal Display Device and Method of Fabricating the Same
    • 透反液晶显示装置及其制造方法
    • US20110220902A1
    • 2011-09-15
    • US13114033
    • 2011-05-23
    • Jung II LEEJoong-Young Yang
    • Jung II LEEJoong-Young Yang
    • H01L33/60H01L33/16
    • G02F1/133555G02F1/133371G02F1/13439G02F2001/136231G02F2201/123G02F2203/02
    • An array substrate for a transflective liquid crystal display device includes: a substrate; a gate line and a data line on the substrate, the gate line and the data line crossing each other to define a pixel region including a transmissive area and a reflective area surrounding the transmissive area; a thin film transistor having a gate insulating layer, the thin film transistor electrically connected to the gate line and the data line; a first passivation layer having a drain contact hole exposing a drain electrode of the thin film transistor and a through hole exposing the substrate in the transmissive area; a pixel electrode on the first passivation layer, the pixel electrode contacting the substrate in the transmissive area through the through hole; and a reflective plate on the pixel electrode, the reflective plate being electrically connected to the drain electrode through the drain contact hole and to the pixel electrode.
    • 一种半透射型液晶显示装置的阵列基板,包括:基板; 栅极线和数据线,栅极线和数据线彼此交叉以限定包括透射区域和围绕透射区域的反射区域的像素区域; 具有栅极绝缘层的薄膜晶体管,所述薄膜晶体管电连接到所述栅极线和所述数据线; 具有暴露所述薄膜晶体管的漏电极的漏极接触孔和在所述透射区域中暴露所述衬底的通孔的第一钝化层; 所述第一钝化层上的像素电极,所述像素电极通过所述通孔与所述透射区域中的所述基板接触; 以及像素电极上的反射板,反射板通过漏极接触孔和像素电极与漏电极电连接。