专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09349821B2 Electrode structure, method of fabricating the same, and semiconductor device including the electrode structure 有权
公开(公告)号：US09349821B2
公开(公告)日：2016-05-24
申请号：US14940785
申请日：2015-11-13
申请人： Dong-Kak Lee , Joon Kim , Bong-hyun Kim , Han-Jin Lim
发明人： Dong-Kak Lee , Joon Kim , Bong-hyun Kim , Han-Jin Lim
IPC分类号： H01L21/311 , H01L21/28 , H01L29/49 , H01L27/092 , H01L27/108 , H01L29/423
CPC分类号： H01L27/092 , H01L21/28044 , H01L21/28061 , H01L21/823835 , H01L21/823842 , H01L27/10808 , H01L27/10823 , H01L27/10873 , H01L29/1037 , H01L29/4236 , H01L29/4238 , H01L29/4925 , H01L29/4933 , H01L29/4941 , H01L29/66575 , H01L29/78
摘要： An electrode structure is disclosed. The electrode structure includes a first polysilicon layer doped with resistance adjustment impurities; a second polysilicon layer for adjusting grains, formed in the first polysilicon layer and doped with grain adjustment impurities; an ohmic metal layer formed on the first and second polysilicon layers; a barrier metal layer formed on the ohmic metal layer; and a metal layer formed on the barrier metal layer.

2. 发明申请

US20060258774A1 Pixel-to-barrier-uneveness-controllable ink 有权
标题翻译：像素到屏障不均匀可控墨水
公开(公告)号：US20060258774A1
公开(公告)日：2006-11-16
申请号：US11375534
申请日：2006-03-15
申请人： Joon Kim , Hyun Kim
发明人： Joon Kim , Hyun Kim
IPC分类号： C03C17/00
CPC分类号： C09D11/101 , Y10T428/24802
摘要： Disclosed is an ink, which has a viscosity and a volumetric shrinkage, controlled to 20˜80 cP and 10˜30%, respectively, by controlling an amount of each of: (a) a first monomer having a viscosity of 7˜1,600 cP and having one or two polymerizable functional groups; and (b) a second monomer having a viscosity of 30˜20,000 cP and having at least three polymerizable functional groups, in the presence of 0˜20 wt % of a solvent, and which can form a convex portion due to its surface tension controlled to 20˜40 mN/m, so as to compensate for its volumetric shrinkage, wherein the viscosity and the surface tension are measured at 25° C. A substrate, which is patterned or information-recorded with the ink, and a display device having the substrate are also disclosed.
摘要翻译：公开了通过控制以下各项的量分别控制为20〜80cP和10〜30％的粘度和体积收缩率的油墨：（a）粘度为7〜1,600cP的第一单体并具有一个或两个可聚合官能团; 和（b）在0〜20重量％的溶剂存在下，粘度为30〜20,000cP并具有至少3个可聚合官能团的第二单体，并且由于其表面张力控制而可形成凸部至20〜40mN / m，以补偿其体积收缩率，其中在25℃下测量粘度和表面张力。用油墨图案化或信息记录的基材和具有还公开了基板。

3. 发明申请

US20160071946A1 ELECTRODE STRUCTURE, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE ELECTRODE STRUCTURE 审中-公开
标题翻译：电极结构，其制造方法以及包括电极结构的半导体器件
公开(公告)号：US20160071946A1
公开(公告)日：2016-03-10
申请号：US14940785
申请日：2015-11-13
申请人： Dong-Kak Lee , Joon Kim , Bong-hyun Kim , Han-Jin Lim
发明人： Dong-Kak Lee , Joon Kim , Bong-hyun Kim , Han-Jin Lim
IPC分类号： H01L29/49 , H01L27/108 , H01L29/423 , H01L27/092
CPC分类号： H01L27/092 , H01L21/28044 , H01L21/28061 , H01L21/823835 , H01L21/823842 , H01L27/10808 , H01L27/10823 , H01L27/10873 , H01L29/1037 , H01L29/4236 , H01L29/4238 , H01L29/4925 , H01L29/4933 , H01L29/4941 , H01L29/66575 , H01L29/78
摘要： An electrode structure is disclosed. The electrode structure includes a first polysilicon layer doped with resistance adjustment impurities; a second polysilicon layer for adjusting grains, formed in the first polysilicon layer and doped with grain adjustment impurities; an ohmic metal layer formed on the first and second polysilicon layers; a barrier metal layer formed on the ohmic metal layer; and a metal layer formed on the barrier metal layer.
摘要翻译：公开了电极结构。电极结构包括掺杂有电阻调节杂质的第一多晶硅层; 用于调节晶粒的第二多晶硅层，形成在第一多晶硅层中并掺杂有晶粒调节杂质; 在第一和第二多晶硅层上形成的欧姆金属层; 形成在欧姆金属层上的阻挡金属层; 以及形成在阻挡金属层上的金属层。

4. 发明授权

US09202813B2 Electrode structure, method of fabricating the same, and semiconductor device including the electrode structure 有权
标题翻译：电极结构及其制造方法以及包括该电极结构的半导体器件
公开(公告)号：US09202813B2
公开(公告)日：2015-12-01
申请号：US13169348
申请日：2011-06-27
申请人： Dong-kak Lee , Joon Kim , Bong-hyun Kim , Han-Jin Lim
发明人： Dong-kak Lee , Joon Kim , Bong-hyun Kim , Han-Jin Lim
IPC分类号： H01L21/28 , H01L21/311 , H01L27/108 , H01L21/8238 , H01L29/10 , H01L29/423 , H01L29/49 , H01L29/66 , H01L29/78
CPC分类号： H01L27/092 , H01L21/28044 , H01L21/28061 , H01L21/823835 , H01L21/823842 , H01L27/10808 , H01L27/10823 , H01L27/10873 , H01L29/1037 , H01L29/4236 , H01L29/4238 , H01L29/4925 , H01L29/4933 , H01L29/4941 , H01L29/66575 , H01L29/78
摘要： An electrode structure is disclosed. The electrode structure includes a first polysilicon layer doped with resistance adjustment impurities; a second polysilicon layer for adjusting grains, formed in the first polysilicon layer and doped with grain adjustment impurities; an ohmic metal layer formed on the first and second polysilicon layers; a barrier metal layer formed on the ohmic metal layer; and a metal layer formed on the barrier metal layer.
摘要翻译：公开了电极结构。电极结构包括掺杂有电阻调节杂质的第一多晶硅层; 用于调节晶粒的第二多晶硅层，形成在第一多晶硅层中并掺杂有晶粒调节杂质; 在第一和第二多晶硅层上形成的欧姆金属层; 形成在欧姆金属层上的阻挡金属层; 以及形成在阻挡金属层上的金属层。

5. 发明申请

US20120001267A1 ELECTRODE STRUCTURE, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE ELECTRODE STRUCTURE 有权
标题翻译：电极结构，其制造方法以及包括电极结构的半导体器件
公开(公告)号：US20120001267A1
公开(公告)日：2012-01-05
申请号：US13169348
申请日：2011-06-27
申请人： Dong-kak Lee , Joon Kim , Bong-hyun Kim , Han-Jin Lim
发明人： Dong-kak Lee , Joon Kim , Bong-hyun Kim , Han-Jin Lim
IPC分类号： H01L27/092 , H01L29/49 , H01L21/28 , H01L27/088
CPC分类号： H01L27/092 , H01L21/28044 , H01L21/28061 , H01L21/823835 , H01L21/823842 , H01L27/10808 , H01L27/10823 , H01L27/10873 , H01L29/1037 , H01L29/4236 , H01L29/4238 , H01L29/4925 , H01L29/4933 , H01L29/4941 , H01L29/66575 , H01L29/78
摘要： An electrode structure is disclosed. The electrode structure includes a first polysilicon layer doped with resistance adjustment impurities; a second polysilicon layer for adjusting grains, formed in the first polysilicon layer and doped with grain adjustment impurities; an ohmic metal layer formed on the first and second polysilicon layers; a barrier metal layer formed on the ohmic metal layer; and a metal layer formed on the barrier metal layer.
摘要翻译：公开了电极结构。电极结构包括掺杂有电阻调节杂质的第一多晶硅层; 用于调节晶粒的第二多晶硅层，形成在第一多晶硅层中并掺杂有晶粒调节杂质; 在第一和第二多晶硅层上形成的欧姆金属层; 形成在欧姆金属层上的阻挡金属层; 以及形成在阻挡金属层上的金属层。

6. 发明授权

US07682450B2 Stacked semiconductor device and related method 有权
标题翻译：叠层半导体器件及相关方法
公开(公告)号：US07682450B2
公开(公告)日：2010-03-23
申请号：US11485323
申请日：2006-07-13
申请人： Yun-Seung Kang , Eun-Kuk Chung , Joon Kim , Jin-Hong Kim , Suk-Chul Bang
发明人： Yun-Seung Kang , Eun-Kuk Chung , Joon Kim , Jin-Hong Kim , Suk-Chul Bang
IPC分类号： C30B21/02
CPC分类号： H01L29/66772 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/28525 , H01L21/76879 , H01L21/76898 , H01L21/8221 , H01L21/84 , H01L23/481 , H01L27/0688 , H01L2924/0002 , H01L2924/00
摘要： A stacked semiconductor device and a method for fabricating the stacked semiconductor device are disclosed. The stacked semiconductor device includes a first insulating interlayer having an opening that partially exposes a substrate, wherein the substrate includes single crystalline silicon, and a first seed pattern that fills the opening, wherein the first seed pattern has an upper portion disposed over the opening, and the upper portion is tapered away from the substrate. The stacked semiconductor device further includes a second insulating interlayer formed on the first insulating interlayer, wherein a trench that exposes the upper portion of the first seed pattern penetrates the second insulating interlayer, and a first single crystalline silicon structure that fills the trench.
摘要翻译：公开了一种叠层半导体器件及其制造方法。堆叠半导体器件包括具有部分地暴露衬底的开口的第一绝缘中间层，其中衬底包括单晶硅，以及填充开口的第一种子图案，其中第一种子图案具有设置在开口上方的上部，并且上部部分与基板成锥形。层叠半导体器件还包括形成在第一绝缘中间层上的第二绝缘中间层，其中暴露第一种子图案的上部的沟槽穿透第二绝缘夹层，以及填充沟槽的第一单晶硅结构。

7. 发明申请

US20070265038A1 Notification System And The Method Of Mobile Phone Call Arrival Using Sound Communication 审中-公开
标题翻译：通知系统和使用声音通信的手机通话方式
公开(公告)号：US20070265038A1
公开(公告)日：2007-11-15
申请号：US11742851
申请日：2007-05-01
申请人： Joon Kim
发明人： Joon Kim
IPC分类号： H04B1/38
CPC分类号： H04M19/041 , H04M1/7253
摘要： Disclosed is an incoming call notifying system for notifying a user of an incoming call of a mobile terminal. The incoming call notifying system comprises: a mobile terminal including a speaker configured to output a sound wave and a controller configured to control so as to output a sound wave signal of a predetermined frequency to the speaker in the incoming call; and an incoming call notifying apparatus including a microphone configured to receive a surrounding sound wave, a processor configured to analyze the sound wave received from the microphone, determine whether the received sound wave is the sound wave signal sent from the speaker of the mobile terminal, and if so, send a command a to notifying means.
摘要翻译：公开了一种来电通知系统，用于通知用户移动终端的来电。来电通知系统包括：移动终端，包括被配置为输出声波的扬声器;以及控制器，被配置为控制以便在来电中向扬声器输出预定频率的声波信号; 以及包括被配置为接收周围声波的麦克风的来电通知装置，被配置为分析从麦克风接收的声波的处理器，确定接收的声波是否是从移动终端的扬声器发送的声波信号，如果是这样，发送命令a到通知手段。

8. 发明申请

US20060102101A1 Electronic fence capable of guiding animals to return 失效
标题翻译：电子围栏能够引导动物返回
公开(公告)号：US20060102101A1
公开(公告)日：2006-05-18
申请号：US11261043
申请日：2005-10-28
申请人： Joon Kim
发明人： Joon Kim
IPC分类号： A01K15/02
CPC分类号： A01K15/023
摘要： An electronic fence system capable of guiding animals under training to return to a predetermined restricted area. The electronic fence generates electric shocks as the animals attempt to leave the predetermined restricted area and restrains the electrical shock when the animals return to the predetermined restricted area. The electronic fence includes a transmitter and a receiver. The transmitter transmits RF signals having a plurality of control signals such that different shock levels are generated responsive to the location of the animals within the predetermined restricted area. The receiver sets a shock wave level, selectively controls the generation of the electric shock and a high-frequency beep, automatically restrains the generation of the electric shock when an escaped animal returns to the predetermined restricted area, and generates an audible alarm and turns lamps on and off to indicate the location of the animal when it escapes from the predefined restricted area.
摘要翻译：一种能够引导被训练的动物回到预定限制区域的电子围栏系统。当动物返回到预定的限制区域时，电子围栏会产生电击，因为动物试图离开预定的限制区域并抑制电击。电子围栏包括发射机和接收机。发射机发送具有多个控制信号的RF信号，使得响应于动物在预定限制区域内的位置而产生不同的震动电平。接收器设置冲击波电平，选择性地控制电击的产生和高频蜂鸣，当逃脱的动物返回到预定的限制区域时，自动抑制电击的产生，并且产生可听见的警报并转动灯开启和关闭以指示当动物从预定义的限制区域逃逸时的位置。

9. 发明授权

US06232696B1 Vacuum generating apparatus with multiple rotors 失效
标题翻译：具有多个转子的真空发生装置
公开(公告)号：US06232696B1
公开(公告)日：2001-05-15
申请号：US09358813
申请日：1999-07-23
申请人： Byung Kyu Kim , Joon Kim
发明人： Byung Kyu Kim , Joon Kim
IPC分类号： H02K1600
CPC分类号： F04D25/0653 , F04D25/166 , F04D29/441 , H02K7/14 , H02K21/24
摘要： A vacuum generating apparatus for a vacuum cleaner is provided, in which an axial type coreless brushless direct-current (DC) motor is implemented in the form of a rotor-impeller integration structure. The vacuum generating apparatus includes an axial type brushless DC motor in which disc-shaped upper and lower rotors are symmetrically disposed facing the upper and lower portions of a disc-shaped stator at either end of a rotating shaft rotatably supported in the inner circumferential portion of the stator, upper and lower impellers integrally fixed in the upper and lower rotors, respectively, and upper and lower housings whose outer circumferential portions are combined with the outer circumferential portions of the respective disc-shaped stator such that air sucked via sucking inlets formed at the center of the housings is guided to a discharging outlet together with the stator. A single rotor structure can also be adopted.
摘要翻译：提供一种用于真空吸尘器的真空发生装置，其中轴向型无芯无刷直流（DC）电动机以转子 - 叶轮一体化结构的形式实现。真空发生装置包括轴向型无刷直流电动机，其中盘形的上下转子对称地设置在与可旋转地支撑在旋转轴的内周部分的旋转轴的任一端面对的盘形定子的上部和下部分别一体地固定在上下转子中的定子，上下叶轮和外周部与各圆盘状定子的外周部组合的上下壳体，使得通过吸入口吸入的空气形成在壳体的中心与定子一起被引导到排出口。也可采用单转子结构。

10. 发明授权

US08419853B2 Stacked semiconductor device and related method 有权
标题翻译：叠层半导体器件及相关方法
公开(公告)号：US08419853B2
公开(公告)日：2013-04-16
申请号：US12623515
申请日：2009-11-23
申请人： Yun-Seung Kang , Eun-Kuk Chung , Joon Kim , Jin-Hong Kim , Suk-Chul Bang
发明人： Yun-Seung Kang , Eun-Kuk Chung , Joon Kim , Jin-Hong Kim , Suk-Chul Bang
IPC分类号： C30B21/04
CPC分类号： H01L29/66772 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/28525 , H01L21/76879 , H01L21/76898 , H01L21/8221 , H01L21/84 , H01L23/481 , H01L27/0688 , H01L2924/0002 , H01L2924/00
摘要： A stacked semiconductor device and a method for fabricating the stacked semiconductor device are disclosed. The stacked semiconductor device includes a first insulating interlayer having an opening that partially exposes a substrate, wherein the substrate includes single crystalline silicon, and a first seed pattern that fills the opening, wherein the first seed pattern has an upper portion disposed over the opening, and the upper portion is tapered away from the substrate. The stacked semiconductor device further includes a second insulating interlayer formed on the first insulating interlayer, wherein a trench that exposes the upper portion of the first seed pattern penetrates the second insulating interlayer, and a first single crystalline silicon structure that fills the trench.
摘要翻译：公开了一种叠层半导体器件及其制造方法。堆叠半导体器件包括具有部分地暴露衬底的开口的第一绝缘中间层，其中衬底包括单晶硅和填充开口的第一种子图案，其中第一种子图案具有设置在开口上方的上部，并且上部部分与基板成锥形。层叠半导体器件还包括形成在第一绝缘中间层上的第二绝缘中间层，其中暴露第一种子图案的上部的沟槽穿透第二绝缘夹层，以及填充沟槽的第一单晶硅结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式