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1. 发明授权

US5989775A Copolymer useful for positive photoresist and chemical amplification positive photoresist composition comprising the same 失效
标题翻译：用于正性光致抗蚀剂的共聚物和包含其的化学扩增正性光致抗蚀剂组合物
公开(公告)号：US5989775A
公开(公告)日：1999-11-23
申请号：US998546
申请日：1997-12-26
申请人： Joo-Hyeon Park , Ji-Hong Kim , Ki-Dae Kim , Sun-Yi Park , Seong-Ju Kim
发明人： Joo-Hyeon Park , Ji-Hong Kim , Ki-Dae Kim , Sun-Yi Park , Seong-Ju Kim
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： A copolymer having a repeating unit represented by the following general formula I and a chemical amplification positive photoresist composition having the copolymer and a photoacid generator. The photoresist can allow for a good pattern shape even though a post-baking is taken in a somewhat delayed time and for a use of any radiation, such as uv light, deep uv light and charged particle beam. Also, it is superior in storage stability and resolution so that it is useful for the high integration of semiconductor devices. The polymer ranges, in polystyrene-reduced average molecular weight, from 1,000 to 1,000,000. The polymer is represented by the following repeating pattern: ##STR1## wherein, R.sub.1, R.sub.2 and R.sub.3 independently represent a hydrogen atom or a methyl; R.sub.4, R.sub.5 and R.sub.6 independently represent a hydrogen atom, an alkyl group, an alkoxy group or a halogen; 1, m, n each is a repeating number satisfying the condition that 0.3
摘要翻译：具有由以下通式I表示的重复单元的共聚物和具有共聚物和光致酸发生剂的化学扩增正性光致抗蚀剂组合物。即使在稍微延迟的时间内进行后烘烤并且使用诸如紫外光，深紫外光和带电粒子束的任何辐射，光致抗蚀剂可以允许良好的图案形状。此外，它在存储稳定性和分辨率方面是优异的，因此它对于半导体器件的高集成是有用的。聚苯乙烯换算的聚合物的平均分子量为1,000至1,000,000。聚合物由以下重复图案表示：其中，R1，R2和R3独立地表示氢原子或甲基; R4，R5和R6独立地表示氢原子，烷基，烷氧基或卤素; 1，m，n分别为满足0.3 <1 /（m + n）<0.9,0.1

2. 发明授权

US5962185A Polymer for positive photoresist and chemical amplified positive photoresist composition containing the same 失效
标题翻译：用于正性光致抗蚀剂的聚合物和含有该光致抗蚀剂的化学扩增的正性光致抗蚀剂组合物
公开(公告)号：US5962185A
公开(公告)日：1999-10-05
申请号：US938925
申请日：1997-09-26
申请人： Joo-Hyeon Park , Seong-Ju Kim , Ji-Hong Kim , Ki-Dae Kim
发明人： Joo-Hyeon Park , Seong-Ju Kim , Ji-Hong Kim , Ki-Dae Kim
IPC分类号： C08F212/04 , C07C69/736 , C08F216/10 , C08F220/30 , G03C1/00 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , C08F220/30 , G03F7/039 , Y10S430/106 , Y10S430/111
摘要： A positive chemical amplified photoresist composition having as a matrix resin a polymer having the repeating unit of Formula (I) and a photoacid generator. The polymer ranges, in polystyrene-reduced weight average molecular weight, from about 2,000 to 1,000,000. The photoresist composition is possible to develop in alkali and shows excellent sensitivity, resolution and transmissivity to deep uv light in addition to being superior in storage preservativity. The repeating unit of Formula (I) is: ##STR1## wherein, R.sub.2, R.sub.2 and R.sub.3 are independently represented by a hydrogen atom or a methyl group; R.sub.4 is a hydrogen atom, an alkyl group or an alkoxy group; R.sub.5 is functions as an acid-labile protective group and is selected from a t-butyl group, a tetrahydropyranyl group or an alkoxymethylene group; j is an integer of 1-8; k is an integer of 0-8; and 1, m and n each represent a mole ratio, satisfying the condition of l+m+n=1 where 0
摘要翻译：一种正性化学放大光致抗蚀剂组合物，其具有作为基质树脂的具有式（I）的重复单元的聚合物和光酸产生剂。聚苯乙烯换算的重均分子量范围为约2,000至1,000,000。光致抗蚀剂组合物可以在碱中显影，并且除了具有优异的储存保存性之外，对深紫外光具有优异的灵敏度，分辨率和透射率。式（I）的重复单元是：其中R2，R2和R3独立地由氢原子或甲基表示; R4是氢原子，烷基或烷氧基; R5用作酸不稳定保护基，选自叔丁基，四氢吡喃基或烷氧基亚甲基; j为1-8的整数; k是0-8的整数; 和1，m和n各自表示摩尔比，满足条件1 + m + n = 1，其中0 <1 <0.4。

3. 发明授权

US5851728A Three-component chemical amplified photoresist composition 失效
标题翻译：三组分化学放大光致抗蚀剂组合物
公开(公告)号：US5851728A
公开(公告)日：1998-12-22
申请号：US728771
申请日：1996-10-09
申请人： Seong-Ju Kim , Joo-Hyeon Park , Ki-Dae Kim , Dong-Chui Seo
发明人： Seong-Ju Kim , Joo-Hyeon Park , Ki-Dae Kim , Dong-Chui Seo
IPC分类号： G03F7/004 , G03F7/023 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , Y10S430/106
摘要： A three-component chemical amplified photoresist composition, comprising: an alkali soluble resin; a dissolution inhibitor of aromatic polyhydroxy compound substituted by at least two acid-decomposable radicals; and a photo acid generating agent of an onium salt, which is capable of forming good profiles when exposed to light with a short wavelength and is superior in heat resistance and storage stability.
摘要翻译：一种三组分化学放大光致抗蚀剂组合物，包括：碱溶性树脂; 由至少两个酸可分解基团取代的芳族多羟基化合物的溶解抑制剂; 以及一种鎓盐的光酸生成剂，其能够在短波长的光下曝光时能够形成良好的轮廓，并且耐热性和储存稳定性优异。

4. 发明授权

US5882835A Positive photoresist resin and chemical amplified positive photoresist composition containing the same 失效
标题翻译：正光致抗蚀剂树脂和含有相同的化学放大正光致抗蚀剂组合物
公开(公告)号：US5882835A
公开(公告)日：1999-03-16
申请号：US932415
申请日：1997-09-17
申请人： Joo-Hyeon Park , Seong-Ju Kim , Ki-Dae Kim , Sun-Yi Park
发明人： Joo-Hyeon Park , Seong-Ju Kim , Ki-Dae Kim , Sun-Yi Park
IPC分类号： C08F8/00 , C08F12/22 , G03F7/004 , G03F7/039 , H01L21/027 , C08F16/02 , C08F16/12
CPC分类号： G03F7/039 , C08F8/00 , G03F7/0045 , Y10S430/106
摘要： A chemical amplified positive photoresist composition including a resin having the repeating unit of Formula I and a photoacid generator. The resin ranges, in polystyrene-reduced molecular weight, from about 2,000 to 1,000,000. In Formula I, k and l each represent a mole ratio satisfying the condition of k+l=l. R.sub.1 is a hydrogen atom or a methyl group. R.sub.2 and R.sub.3 are independently either a hydrogen atom, a halogen atom, an alkyl group or an alkoxy group. R.sub.4 is an acetate group, a t-butoxycarbonyl group, a benzyl group, a trialkylsilyl group or an alkyl group. The photoacid generator which generates an acid by radiation. ##STR1##
摘要翻译：一种化学放大型正性光致抗蚀剂组合物，其包含具有式I的重复单元的树脂和光酸产生剂。树脂的聚苯乙烯缩小分子量范围为约2,000至1,000,000。在式I中，k和l各自表示满足条件k + l = 1的摩尔比。 R1是氢原子或甲基。 R2和R3独立地为氢原子，卤素原子，烷基或烷氧基。 R4是乙酸基，叔丁氧基羰基，苄基，三烷基甲硅烷基或烷基。通过辐射产生酸的光酸产生剂。（一）

5. 发明授权

US5665841A Acetal group-containing alkoxy-styrene polymers, method of preparing the same and chemical amplified photoresist composition mainly comprising the same 失效
标题翻译：含有缩醛基的烷氧基 - 苯乙烯聚合物，其制备方法和主要包含其的化学扩增光致抗蚀剂组合物
公开(公告)号：US5665841A
公开(公告)日：1997-09-09
申请号：US744738
申请日：1996-10-30
申请人： Ji-Hong Kim , Sun-Yi Park , Seong-Ju Kim , Joo-Hyeon Park
发明人： Ji-Hong Kim , Sun-Yi Park , Seong-Ju Kim , Joo-Hyeon Park
IPC分类号： C08F12/14 , C08F8/00 , C08F12/22 , C08F112/14 , C08F212/14 , C08L25/18 , G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , C08F24/00
CPC分类号： C08F212/14 , G03F7/0045 , G03F7/038 , G03F7/039 , Y10S430/11
摘要： There are provided acetal group-containing alkoxy-styrene polymers represented by the following formula I: ##STR1## wherein R.sub.1 and R.sub.3 may be the same or different, and represent a hydrogen atom or a methylene group; R.sub.2 represents ##STR2## wherein R.sub.4, R.sub.5, R.sub.6, R.sub.7 and R.sub.8 may be the same or different, and independently represent a hydrogen atom, an alkyl group or an aryl group; m+n=1; k is an integer of 1-5; and l is an integer of 0-5; and an acid-generating agent, and chemical amplified negative photoresist composition comprising the same. It shows excellent transparency and sensitivity to deep UV in addition to being resistant to dry etching and alkali-developable.
摘要翻译：提供由下式I表示的含缩醛基的烷氧基 - 苯乙烯聚合物：其中R 1和R 3可以相同或不同，表示氢原子或亚甲基; R 2可以相同或不同，独立地表示氢原子，烷基或芳基; m + n = 1; k为1-5的整数; l为0-5的整数; 和酸产生剂，以及包含其的化学放大型负性光致抗蚀剂组合物。除了耐干蚀刻和耐碱显影外，它还具有优异的透明度和对深紫外线的敏感性。

6. 发明授权

US5916995A Acetal-substituted aromatic hydroxy compounds and negative photoresist compositions comprising the same 失效
标题翻译：乙缩醛取代的芳族羟基化合物和包含其的负性光致抗蚀剂组合物
公开(公告)号：US5916995A
公开(公告)日：1999-06-29
申请号：US932358
申请日：1997-09-17
申请人： Joo-Hyeon Park , Seong-Ju Kim , Ji-Hong Kim , Sun-Yi Park
发明人： Joo-Hyeon Park , Seong-Ju Kim , Ji-Hong Kim , Sun-Yi Park
IPC分类号： G03F7/004 , C07C43/303 , C07C69/734 , C07C69/92 , C07C69/94 , C07D317/00 , C07D317/22 , C07D319/00 , C08F8/00 , C08F12/22 , C08L25/00 , C08L25/18 , C08L61/00 , C08L61/06 , G03F7/023 , G03F7/038 , H01L21/027 , C08G59/00
CPC分类号： G03F7/038 , C07D317/22 , C08F8/10 , G03F7/0045
摘要： There are disclosed an aromatic hydroxy compound or polymer substituted with acetal of Formula (I), (II) or (III), and a negative photoresist composition prepared therefrom. The pattern formed of the negative photoresist composition has good cross sections in addition to being superior in transmissivity to deep uv light and excimer laser and in thermal resistance and storage stability after exposure. ##STR1##
摘要翻译：公开了由式（I），（II）或（III）的缩醛取代的芳族羟基化合物或聚合物，以及由其制备的负性光致抗蚀剂组合物。除了对深紫外光和准分子激光器的透射率优异以及曝光后的耐热性和储存稳定性之外，由负性光致抗蚀剂组合物形成的图案也具有良好的横截面。

7. 发明授权

US5723258A Acetal group-containing alkoxy-styrene polymers, method of preparing the same and chemical amplified photoresist composition mainly comprising the same 失效
标题翻译：含有缩醛基的烷氧基 - 苯乙烯聚合物，其制备方法和主要包含其的化学扩增光致抗蚀剂组合物
公开(公告)号：US5723258A
公开(公告)日：1998-03-03
申请号：US804288
申请日：1997-03-03
申请人： Ji-Hong Kim , Sun-Yi Park , Seong-Ju Kim , Joo-Hyeon Park
发明人： Ji-Hong Kim , Sun-Yi Park , Seong-Ju Kim , Joo-Hyeon Park
IPC分类号： C08F12/14 , C08F8/00 , C08F12/22 , C08F112/14 , C08F212/14 , C08L25/18 , G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , G03C1/492
CPC分类号： C08F212/14 , G03F7/0045 , G03F7/038 , G03F7/039 , Y10S430/11
摘要： There are provided acetal group-containing alkoxy-styrene polymers represented by the following formula I: ##STR1## wherein R.sub.1 and R.sub.3 may be the same or different, and represent a hydrogen atom or a methylene group; R.sub.2 represents ##STR2## wherein R.sub.4, R.sub.5, R.sub.6, R.sub.7 and R.sub.8 may be the same or different, and independently represent a hydrogen atom, an alkyl group or an aryl group; m+n=1; k is an integer of 1-5; and l is an integer of 0-5; and an acid-generating agent, and chemical amplified negative photoresist composition comprising the same. It shows excellent transparency and sensitivity to deep UV in addition to being resistant to dry etching and alkali-developable.
摘要翻译：提供由下式I表示的含缩醛基的烷氧基 - 苯乙烯聚合物：其中R 1和R 3可以相同或不同，表示氢原子或亚甲基; R 2可以相同或不同，独立地表示氢原子，烷基或芳基; m + n = 1; k为1-5的整数; l为0-5的整数; 和酸产生剂，以及包含其的化学放大负性光致抗蚀剂组合物。除了耐干蚀刻和耐碱显影外，它还具有优异的透明度和对深紫外线的敏感性。

8. 发明授权

US5677103A Positive photoresist composition 失效
标题翻译：正光致抗蚀剂组合物
公开(公告)号：US5677103A
公开(公告)日：1997-10-14
申请号：US723679
申请日：1996-09-30
申请人： Seong-Ju Kim , Joo-Hyeon Park , Ji-Hong Kim , Sun-Yi Park
发明人： Seong-Ju Kim , Joo-Hyeon Park , Ji-Hong Kim , Sun-Yi Park
IPC分类号： G03F7/022 , G03F7/023 , G03F7/039 , H01L21/027
CPC分类号： G03F7/023 , G03F7/022
摘要： A positive photoresist composition which is of high resolution, high sensitivity and wide focusing range and suitable for high integration of semiconductor devices and shows superior resist pattern profile, comprising quinonediazide sulfonic acid ester as a photoresist, an alkali soluble resin, a solvent, and additives, said quinonediazide sulfonic acid ester being prepared through the esterification of 1,2-naphthoquinonediazidesulfonyl halide or 1,2-benzoquinonediazidesulfonyl halide with an aromatic hydroxy compound represented by the following structural formula I: ##STR1## wherein R.sub.1 and R.sub.2 are independently hydrogen, halogen, an alkyl group or an alkoxy group; a is an integer of 1 to 3; b is an integer of 1 to 8; c is an integer of 1 to 12; and R.sub.3 is an alkyl group containing ether, mercapthane, sulfoxide, sulfone, aryl group or hydroxy group.
摘要翻译：具有高分辨率，高灵敏度和宽聚焦范围的正光致抗蚀剂组合物，并且适用于半导体器件的高集成度，并且显示出优异的抗蚀剂图案轮廓，其包含醌二叠氮化物磺酸酯作为光致抗蚀剂，碱溶性树脂，溶剂和添加剂所述醌二叠氮化物磺酸酯是通过1,2-萘醌二叠氮基卤化物或1,2-苯醌二叠氮化物磺酰卤与由以下结构式I表示的芳族羟基化合物的酯化制备的：其中R 1和R 2独立地为氢，卤素，烷基或烷氧基; a为1〜3的整数， b为1〜8的整数， c为1〜12的整数， R3是含有醚基的烷基，巯基，亚砜，砜，芳基或羟基。

9. 发明授权

US06268106B1 Chemically amplified positive photoresist composition 失效
标题翻译：化学扩增的正性光致抗蚀剂组合物
公开(公告)号：US06268106B1
公开(公告)日：2001-07-31
申请号：US09337434
申请日：1999-06-21
申请人： Joo-Hyeon Park , Dong-Chul Seo , Sun-Yi Park , Seong-Ju Kim
发明人： Joo-Hyeon Park , Dong-Chul Seo , Sun-Yi Park , Seong-Ju Kim
IPC分类号： G03F7004
CPC分类号： G03F7/039 , G03F7/0045
摘要： A chemical amplification positive amplification which can be formed into resist patterns much improved in transparency, photosensitivity and resolution and is suitable to KrF and ArF excimer lasers, enabling a submicrolithography process to be as exquisite as 0.2 &mgr;m or less. This composition is based on a copolymer of the formula I, ranging, in polystyrene-reduced weight average molecular weight, from 3,000 to 50,000 with a molecular weight distribution (Mw/Mn) of 1.0 to 2.0, and a low molecular weight compound of the formula VI:
摘要翻译：化学放大阳性扩增可以形成抗蚀剂图案，其透明度，光敏度和分辨率大大提高，适用于KrF和ArF准分子激光器，使得亚微光刻工艺的精细度可达0.2μm或更小。该组合物是基于式I的共聚物，以聚苯乙烯换算的重均分子量为3,000至50,000，分子量分布（Mw / Mn）为1.0至2.0，以及低分子量化合物公式VI：

10. 发明授权

US06369143B1 Polymer for radiation-sensitive resist and resist composition containing the same 有权
标题翻译：用于辐射敏感抗蚀剂的聚合物和含有它的抗蚀剂组合物
公开(公告)号：US06369143B1
公开(公告)日：2002-04-09
申请号：US09337437
申请日：1999-06-21
申请人： Joo-Hyeon Park , Seong-Ju Kim , Dong-Chul Seo , Sun-Yi Park
发明人： Joo-Hyeon Park , Seong-Ju Kim , Dong-Chul Seo , Sun-Yi Park
IPC分类号： C08J541
CPC分类号： G03F7/039 , C08G61/08 , G03F7/0045 , Y10S430/106 , Y10S430/115
摘要： A radiation-sensitive polymer and a chemical amplification resist composition based on the polymer, which can be easily controlled in sensitivity by regulating the content and kind of the carboxylic acid-grafted norbornene derivatives in the matrix polymer and is superior in adherence to substrate and dry etch resistance, so that it can be formed into resist patterns improved in transparency, photosensitivity and resolution by use of KrF or ArF excimer lasers. The polymer is represented by the formula I: wherein, X is an acid-dissociable grafted norbornene derivative selected from the group consisting of the formulas II and III; Y is a carboxylic acid-grafted norbornene derivative represented by the formula IV, and l, m, n and o each are a repeating number not more than 0.5, satisfying the condition that l+m+n+o=l and 0.4≦o≦0.5:
摘要翻译：基于聚合物的辐射敏感聚合物和化学扩增抗蚀剂组合物，其可以通过调节基质聚合物中羧酸接枝的降冰片烯衍生物的含量和种类而容易地控制灵敏度，并且在对基材和干燥的粘附性方面优异因此可以通过使用KrF或ArF准分子激光器将其形成为提高透明度，光敏性和分辨率的抗蚀剂图案。聚合物由式I表示：其中X是选自式II和III的酸解离的接枝的降冰片烯衍生物; Y是由式Ⅳ表示的羧酸接枝的降冰片烯衍生物，l，m，n和o各自为不大于0.5的重复数，满足1 + m + n + o = 1和0.4 <= o <= 0.5：

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