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    • 4. 发明授权
    • Flexible single-crystal film and method of manufacturing the same
    • 柔性单晶膜及其制造方法
    • US07592239B2
    • 2009-09-22
    • US10833050
    • 2004-04-28
    • Jong-Wan ParkJea-Gun Park
    • Jong-Wan ParkJea-Gun Park
    • H01L21/20
    • H01L21/76254H01L27/1214H01L27/1266H01L29/78603H01L31/18
    • The present invention relates to a flexible single-crystal film and a method of manufacturing the same from a single-crystal wafer. That is, the present invention can manufacture a silicon-on-insulator (SOI) wafer comprising a base wafer, one or more buried insulator layers, and a single-crystal layer into a flexible single-crystal film with a desired thickness by employing various wafer thinning techniques. The method for manufacturing a flexible film comprises the steps of (i) providing a SOI wafer comprising a base wafer, one or more buried insulator layers on the base wafer, and a single-crystal layer on said one or more buried insulator layers, (ii) forming one or more protective insulator layers on said single-crystal layer, (iii) removing said base wafer, and (iv) removing one or more of the insulator layers.
    • 本发明涉及柔性单晶膜及其制造方法。 也就是说,本发明可以通过采用各种各样的方式制造包括基底晶片,一个或多个掩埋绝缘体层和单晶层的具有期望厚度的柔性单晶膜的绝缘体上硅(SOI)晶片 晶圆薄化技术。 制造柔性膜的方法包括以下步骤:(i)提供包括基底晶片,基底晶片上的一个或多个掩埋绝缘体层和所述一个或多个掩埋绝缘体层上的单晶层的SOI晶片( ii)在所述单晶层上形成一个或多个保护性绝缘体层,(iii)去除所述基底晶片,和(iv)去除一个或多个绝缘体层。