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1. 发明申请

US20070164298A1 LED having vertical structure and method for fabricating the same 有权
标题翻译：具有垂直结构的LED及其制造方法
公开(公告)号：US20070164298A1
公开(公告)日：2007-07-19
申请号：US11639430
申请日：2006-12-15
申请人： Jong Wook Kim , Jae Wan Choi , Hyun Kyong Cho , Jong Ho Na , Jun Jang
发明人： Jong Wook Kim , Jae Wan Choi , Hyun Kyong Cho , Jong Ho Na , Jun Jang
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L33/20
摘要： A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor layer formed on the plurality of semiconductor layer and provided with an outer surface having a tilt angel of a designated degree; and a second electrode formed on the conductive semiconductor layer.
摘要翻译：具有垂直结构的发光二极管（LED）及其制造方法。具有垂直结构的发光二极管（LED）包括支撑层; 形成在所述支撑层上的第一电极; 形成在所述第一电极上的多个半导体层; 导电半导体层，形成在所述多个半导体层上，并具有指定度的倾斜角的外表面; 以及形成在导电半导体层上的第二电极。

2. 发明授权

US08202753B2 LED having vertical structure and method for fabricating the same 有权
标题翻译：具有垂直结构的LED及其制造方法
公开(公告)号：US08202753B2
公开(公告)日：2012-06-19
申请号：US12877652
申请日：2010-09-08
申请人： Jong Wook Kim , Jae Wan Choi , Hyun Kyong Cho , Jong Ho Na , Jun Ho Jang
发明人： Jong Wook Kim , Jae Wan Choi , Hyun Kyong Cho , Jong Ho Na , Jun Ho Jang
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L33/20
摘要： A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor layer formed on the plurality of semiconductor layers, and provided with an outer surface having a tilt angle of a designated degree; and a second electrode formed on the conductive semiconductor layer.
摘要翻译：具有垂直结构的发光二极管（LED）及其制造方法。具有垂直结构的发光二极管（LED）包括支撑层; 形成在所述支撑层上的第一电极; 形成在所述第一电极上的多个半导体层; 导电半导体层，形成在所述多个半导体层上，并且具有指定度的倾斜角的外表面; 以及形成在导电半导体层上的第二电极。

3. 发明授权

US07812357B2 LED having vertical structure and method for fabricating the same 有权
标题翻译：具有垂直结构的LED及其制造方法
公开(公告)号：US07812357B2
公开(公告)日：2010-10-12
申请号：US11639430
申请日：2006-12-15
申请人： Jong Wook Kim , Jae Wan Choi , Hyun Kyong Cho , Jong Ho Na , Jun Ho Jang
发明人： Jong Wook Kim , Jae Wan Choi , Hyun Kyong Cho , Jong Ho Na , Jun Ho Jang
IPC分类号： H01L29/22
CPC分类号： H01L33/0079 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L33/20
摘要： A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor layer formed on the plurality of semiconductor layer and provided with an outer surface having a tilt angle of a designated degree; and a second electrode formed on the conductive semiconductor layer.
摘要翻译：具有垂直结构的发光二极管（LED）及其制造方法。具有垂直结构的发光二极管（LED）包括支撑层; 形成在所述支撑层上的第一电极; 形成在所述第一电极上的多个半导体层; 导电半导体层，形成在所述多个半导体层上，并具有指定度的倾斜角的外表面; 以及形成在导电半导体层上的第二电极。

4. 发明授权

US08748865B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08748865B2
公开(公告)日：2014-06-10
申请号：US13585481
申请日：2012-08-14
申请人： Jong Hak Won , Jong Ho Na , Jae In Yoon , Hoon ki Hong , Se Hwan Sim
发明人： Jong Hak Won , Jong Ho Na , Jae In Yoon , Hoon ki Hong , Se Hwan Sim
IPC分类号： H01L21/00 , H01L21/66
CPC分类号： H01L33/06 , H01L2224/48091 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： Disclosed are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and a lighting system. The light emitting device includes a first conductive semiconductor layer; an active layer including a quantum well and a quantum barrier and disposed on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The active layer includes a first quantum well adjacent to the second conductive semiconductor layer, a second quantum well adjacent to the first quantum well, and a first quantum barrier between the first quantum well and the second quantum well. A recombination rate of electron-hole in the second quantum well is higher than the recombination rate of the electron-hole in the first quantum well, and the first quantum well has an energy level higher than the energy level of the second quantum well.
摘要翻译：公开了发光器件，制造发光器件的方法，发光器件封装和照明系统。发光器件包括第一导电半导体层; 包括量子阱和量子势垒的有源层，并设置在第一导电半导体层上; 以及在所述有源层上的第二导电半导体层。有源层包括与第二导电半导体层相邻的第一量子阱，与第一量子阱相邻的第二量子阱以及第一量子阱和第二量子阱之间的第一量子势垒。第二量子阱中电子空穴的复合速率高于第一量子阱中电子空穴的复合速率，第一量子阱的能级高于第二量子阱的能级。

5. 发明授权

US09029875B2 Light emitting device and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US09029875B2
公开(公告)日：2015-05-12
申请号：US13429623
申请日：2012-03-26
申请人： Jong Ho Na , Se Hwan Sim , Chong Cook Kim , Jae In Yoon , Jong Pil Jeong , Jung Hyun Hwang , Dong Han Yoo
发明人： Jong Ho Na , Se Hwan Sim , Chong Cook Kim , Jae In Yoon , Jong Pil Jeong , Jung Hyun Hwang , Dong Han Yoo
IPC分类号： H01L27/15 , H01L29/167 , H01L31/12 , H01L33/00 , H01L33/06 , H01L33/32
CPC分类号： H01L33/06 , H01L33/007 , H01L33/32 , H01L2224/48091 , H01L2224/48247 , H01L2924/0002 , H01L2924/12032 , H01L2924/00 , H01L2924/00014
摘要： Disclosed are a light emitting device, a method for manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer, an active layer comprising a well layer and a barrier layer on the first conductive layer, and a second conductive semiconductor layer on the active layer. The well layer includes a first well layer closest to the first conductive semiconductor layer and having a first energy bandgap, a third well layer closest to the second conductive semiconductor layer and having a third energy bandgap, and a second well layer interposed between the first and third well layers and having a second energy bandgap. The third energy bandgap of the third well layer is greater than the second energy bandgap of the second well layer.
摘要翻译：公开了一种发光器件，其制造方法，发光器件封装和照明系统。发光器件包括第一导电半导体层，在第一导电层上包括阱层和阻挡层的有源层以及有源层上的第二导电半导体层。阱层包括最靠近第一导电半导体层并且具有第一能带隙的第一阱层，最靠近第二导电半导体层的第三阱层并具有第三能带隙，以及插入在第一和第二阱层之间的第二阱层，第三阱层并具有第二能带隙。第三阱层的第三能带隙大于第二阱层的第二能带隙。

6. 发明申请

US20140124810A1 LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME 审中-公开
标题翻译：发光装置和具有该发光装置的发光装置包装
公开(公告)号：US20140124810A1
公开(公告)日：2014-05-08
申请号：US14068429
申请日：2013-10-31
申请人： Sang Il Kim , Dong Hun Kang , Jong Ho Na , Yong Seon Song
发明人： Sang Il Kim , Dong Hun Kang , Jong Ho Na , Yong Seon Song
IPC分类号： H01L33/58
CPC分类号： H01L33/20 , H01L21/0237 , H01L21/0243 , H01L21/02433 , H01L21/02538 , H01L21/02551 , H01L21/02639 , H01L21/0265 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/16
摘要： A light emitting device includes a substrate and a plurality of protrusions protruding from a top surface of the substrate. A first semiconductor layer is provided on top surfaces of the protrusions and a plurality of seed patterns protrudes from a bottom surface of the first semiconductor layer toward the protrusions. A medium layer is provided between the protrusions and a light emitting structure on a top surface of the first semiconductor layer. The bottom surface of the first semiconductor layer is located at a higher position than that of each of the protrusions, and the first semiconductor layer contacts a c-plane of each protrusion.
摘要翻译：发光装置包括基板和从基板的顶表面突出的多个突起。第一半导体层设置在突起的顶表面上，并且多个晶种图案从第一半导体层的底表面向突起突出。在第一半导体层的顶表面之间的突起和发光结构之间设置介质层。第一半导体层的底表面位于比每个突起的位置更高的位置，并且第一半导体层接触每个突起的c面。

7. 发明申请

US20130048944A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20130048944A1
公开(公告)日：2013-02-28
申请号：US13585481
申请日：2012-08-14
申请人： Jong Hak WON , Jong Ho Na , Jae In Yoon , Hoon Ki Hong , Se Hwan Sim
发明人： Jong Hak WON , Jong Ho Na , Jae In Yoon , Hoon Ki Hong , Se Hwan Sim
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L2224/48091 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： Disclosed are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and a lighting system. The light emitting device includes a first conductive semiconductor layer; an active layer including a quantum well and a quantum barrier and disposed on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The active layer includes a first quantum well adjacent to the second conductive semiconductor layer, a second quantum well adjacent to the first quantum well, and a first quantum barrier between the first quantum well and the second quantum well. A recombination rate of electron-hole in the second quantum well is higher than the recombination rate of the electron-hole in the first quantum well, and the first quantum well has an energy level higher than the energy level of the second quantum well.
摘要翻译：公开了发光器件，制造发光器件的方法，发光器件封装和照明系统。发光器件包括第一导电半导体层; 包括量子阱和量子势垒的有源层，并设置在第一导电半导体层上; 以及在所述有源层上的第二导电半导体层。有源层包括与第二导电半导体层相邻的第一量子阱，与第一量子阱相邻的第二量子阱以及第一量子阱和第二量子阱之间的第一量子势垒。第二量子阱中电子空穴的复合速率高于第一量子阱中电子空穴的复合速率，第一量子阱的能级高于第二量子阱的能级。

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