专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5723889A Semiconductor memory device and method for fabricating the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US5723889A
公开(公告)日：1998-03-03
申请号：US520435
申请日：1995-08-29
申请人： Jong Mun Choi , Chang Yeol Kim , Woun-Suck Yang
发明人： Jong Mun Choi , Chang Yeol Kim , Woun-Suck Yang
IPC分类号： H01L21/8242 , H01L27/108 , H01L29/76 , H01L21/465
CPC分类号： H01L27/10864 , H01L27/10841
摘要： A semiconductor memory device includes a semiconductor substrate, a first insulation film formed on the substrate, a trench formed in the substrate, an opening formed in the first insulation film above the trench, a capacitor including a dielectric film formed in the trench and a storage node formed in the trench on the dielectric film, a transfer transistor including a channel layer formed in the opening on the storage node, a gate insulation film formed on the channel layer, and a gate electrode formed on the gate insulation film, a second insulation film formed on the gate electrode, a conduction layer formed on the second insulation film, a third insulation film in contact with the channel layer, and a bit line in contact with the conduction layer.
摘要翻译：半导体存储器件包括半导体衬底，形成在衬底上的第一绝缘膜，在衬底中形成的沟槽，形成在沟槽上方的第一绝缘膜中的开口，包括形成在沟槽中的电介质膜的电容器和存储器形成在电介质膜上的沟槽中的传输晶体管，包括形成在存储节点上的开口中的沟道层的传输晶体管，形成在沟道层上的栅极绝缘膜，以及形成在栅极绝缘膜上的栅电极，第二绝缘层形成在栅电极上的膜，形成在第二绝缘膜上的导电层，与沟道层接触的第三绝缘膜，以及与导电层接触的位线。

2. 发明授权

US5821579A Semiconductor memory device and method of manufacturing the same 失效
公开(公告)号：US5821579A
公开(公告)日：1998-10-13
申请号：US561477
申请日：1995-11-21
申请人： Jong Mun Choi , Chang Yeol Kim
发明人： Jong Mun Choi , Chang Yeol Kim
IPC分类号： H01L21/8242 , H01L27/108
CPC分类号： H01L27/10864 , H01L27/10823 , H01L27/10832
摘要： A semiconductor memory device including a semiconductor substrate having a trench; a dielectric film formed on the substrate; a storage node electrode formed on the dielectric film; a first insulating film formed on the storage node electrode corresponding to the trench; a gate electrode formed on the first insulating film; a second insulating film formed on the gate electrode; a gate insulating film formed on at least one the side of gate electrode; a semiconductor layer formed on the at least one side of the first and second insulating films; and impurity regions formed in the semiconductor layer at the sides of the first and second insulating films. A manufacturing method including the steps of etching a semiconductor substrate to form a trench; forming a dielectric film and a conductive layer on the substrate; forming a first insulating film, a gate electrode, a second insulating film, and an interconnection layer, on the conductive layer corresponding to the trench; forming a semiconductor layer on the sides of the first and second insulating films; etching the conductive layer to form a storage node; and forming an impurity region in the semiconductor layer at the sides of the first and second insulating films.

3. 发明授权

US5920777A Semiconductor memory device and method of manufacturing the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US5920777A
公开(公告)日：1999-07-06
申请号：US111287
申请日：1998-07-07
申请人： Jong Mun Choi , Chang Yeol Kim
发明人： Jong Mun Choi , Chang Yeol Kim
IPC分类号： H01L21/8242 , H01L27/108 , H01L21/336
CPC分类号： H01L27/10864 , H01L27/10823 , H01L27/10832
摘要： A semiconductor memory device including a semiconductor substrate having a trench; a dielectric film formed on the substrate; a storage node electrode formed on the dielectric film; a first insulating film formed on the storage node electrode corresponding to the trench; a gate electrode formed on the first insulating film; a second insulating film formed on the gate electrode; a gate insulating film formed on at least one the side of gate electrode; a semiconductor layer formed on the at least one side of the first and second insulating films; and impurity regions formed in the semiconductor layer at the sides of the first and second insulating films. A manufacturing method including the steps of etching a semiconductor substrate to form a trench; forming a dielectric film and a conductive layer on the substrate; forming a first insulating film, a gate electrode, a second insulating film, and an interconnection layer, on the conductive layer corresponding to the trench; forming a semiconductor layer on the sides of the first and second insulating films; etching the conductive layer to form a storage node; and forming an impurity region in the semiconductor layer at the sides of the first and second insulating films.
摘要翻译：一种半导体存储器件，包括具有沟槽的半导体衬底; 形成在基板上的电介质膜; 形成在电介质膜上的存储节点电极; 形成在与所述沟槽对应的所述存储节点电极上的第一绝缘膜; 形成在所述第一绝缘膜上的栅电极; 形成在栅电极上的第二绝缘膜; 形成在栅电极的至少一侧的栅极绝缘膜; 形成在所述第一绝缘膜和所述第二绝缘膜的至少一个侧面上的半导体层; 以及在第一和第二绝缘膜的侧面处形成在半导体层中的杂质区域。一种制造方法，包括以下步骤：蚀刻半导体衬底以形成沟槽; 在基板上形成电介质膜和导电层; 在对应于沟槽的导电层上形成第一绝缘膜，栅电极，第二绝缘膜和互连层; 在所述第一和第二绝缘膜的侧面上形成半导体层; 蚀刻导电层以形成存储节点; 以及在第一和第二绝缘膜的侧面的半导体层中形成杂质区。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式