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1. 发明授权

US08809177B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08809177B2
公开(公告)日：2014-08-19
申请号：US13599453
申请日：2012-08-30
申请人： Jong Man Kim
发明人： Jong Man Kim
IPC分类号： H01L29/788 , H01L21/78
CPC分类号： H01L21/28273 , H01L21/28247 , H01L27/11521
摘要： A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a gate pattern formed by patterning a tunnel insulating layer, a conductive film for a floating gate, a dielectric film, a conductive film for a control gate, and a gate metal film sequentially formed on a semiconductor substrate; a first barrier film formed on side walls of the gate metal film; and a second barrier film formed on an upper surface of the gate metal film.
摘要翻译：提供半导体器件及其制造方法。半导体器件包括通过图案化隧道绝缘层，用于浮置栅极的导电膜，电介质膜，用于控制栅极的导电膜和顺序形成在半导体衬底上的栅极金属膜形成的栅极图案; 形成在栅极金属膜的侧壁上的第一阻挡膜; 以及形成在所述栅极金属膜的上表面上的第二阻挡膜。

2. 发明授权

US07883913B2 Manufacturing method of image sensor of vertical type 失效
标题翻译：垂直型图像传感器的制造方法
公开(公告)号：US07883913B2
公开(公告)日：2011-02-08
申请号：US12638121
申请日：2009-12-15
申请人： Jong Man Kim
发明人： Jong Man Kim
IPC分类号： H01L21/00
CPC分类号： H01L27/1469 , H01L27/14621 , H01L27/1463 , H01L27/14634 , H01L27/14636
摘要： A manufacturing method of an image sensor of vertical type is provided that includes: forming an insulation layer with a metal wiring and a contact plug therein on a first substrate; bonding a second substrate having an image sensing unit over the insulation layer; forming a trench in the second substrate to divide the image sensing unit for each pixel; forming a PTI by gap-filling the trench with insulating material; forming a first material layer over the PTI, the image sensing unit, and the insulation layer; and forming a second material layer over the first material layer and performing a deuterium annealing process thereon. The crystal defects of the substrate generated when performing the trench etching on the donor substrate to define unit pixels are cured by performing the deuterium annealing process, making it possible to improve the sensitivity and illumination characteristics of the image sensor of vertical type.
摘要翻译：提供垂直型图像传感器的制造方法，其包括：在第一基板上形成具有金属布线的绝缘层和接触插塞; 将具有图像感测单元的第二基板结合在所述绝缘层上; 在所述第二基板中形成沟槽，以分割每个像素的图像感测单元; 通过用绝缘材料间隙填充沟槽来形成PTI; 在PTI，图像感测单元和绝缘层上形成第一材料层; 以及在所述第一材料层上形成第二材料层并在其上进行氘退火处理。通过执行氘退火处理来使通过施主衬底进行沟槽蚀刻而形成单位像素而产生的衬底的晶体缺陷被固化，从而可以提高垂直型图像传感器的灵敏度和照明特性。

3. 发明授权

US09153514B2 Power module package 有权
标题翻译：电源模块封装
公开(公告)号：US09153514B2
公开(公告)日：2015-10-06
申请号：US13610680
申请日：2012-09-11
申请人： Young Ho Sohn , Young Hoon Kwak , Jong Man Kim , Kyu Hwan Oh , Tae Hyun Kim
发明人： Young Ho Sohn , Young Hoon Kwak , Jong Man Kim , Kyu Hwan Oh , Tae Hyun Kim
IPC分类号： H01L29/72 , H01L23/31 , H01L23/373 , H01L23/433 , H01L23/495
CPC分类号： H01L23/3107 , H01L23/3735 , H01L23/4334 , H01L23/49537 , H01L23/49575 , H01L24/73 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/48137 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2924/13034 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： Disclosed herein is a power module package including: a first substrate having one surface and the other surface; a second substrate contacting one surface of the first substrate; a third substrate contacting one side of the other surface of the first substrate; a first lead frame contacting the other side of the other surface of the first substrate; and a second lead frame electrically connected to the third substrate.
摘要翻译：本文公开了一种功率模块封装，包括：具有一个表面和另一个表面的第一基板; 第二基板，与第一基板的一个表面接触; 第三基板，其接触所述第一基板的另一表面的一侧; 与所述第一基板的另一表面的另一侧接触的第一引线框架; 以及电连接到第三基板的第二引线框架。

4. 发明授权

US09103710B2 Apparatus and method of monitoring flow of liquid in pipe 有权
标题翻译：监测管道中液体流动的装置和方法
公开(公告)号：US09103710B2
公开(公告)日：2015-08-11
申请号：US13334584
申请日：2011-12-22
申请人： Tae Joon Kim , Ji Young Jeong , Yong Bum Lee , In Koo Hwang , Jae Hyuk Eoh , Jong Man Kim , Yeong Ii Kim
发明人： Tae Joon Kim , Ji Young Jeong , Yong Bum Lee , In Koo Hwang , Jae Hyuk Eoh , Jong Man Kim , Yeong Ii Kim
IPC分类号： G01F1/68 , G01F23/24 , G01F1/688
CPC分类号： G01F23/241 , G01F1/6888 , G01F23/248
摘要： An apparatus and method for monitoring a flow of liquid in a pipe are provided. The apparatus may include a temperature sensor attached to a pipe of a heat exchanger system to measure a temperature of the pipe, and a controller to determine whether a liquid is present in the pipe, based on a change in the measured temperature.
摘要翻译：提供一种用于监测管道中液体流动的装置和方法。该装置可以包括附接到热交换器系统的管道以测量管道的温度的温度传感器，以及基于测量温度的变化来确定管道中是否存在液体的控制器。

5. 发明授权

US07875917B2 Image sensor and method for manufacturing the same 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US07875917B2
公开(公告)日：2011-01-25
申请号：US12326797
申请日：2008-12-02
申请人： Jong Man Kim
发明人： Jong Man Kim
IPC分类号： H01L31/062
CPC分类号： H01L27/14636
摘要： An image sensor and a method for manufacturing the same are provided. In the image sensor, a semiconductor substrate has a pixel region and a peripheral region defined by a first device isolation layer. First and second photodiode patterns are formed on the pixel region and are connected to lower metal lines to first and second readout circuitries. The first photodiode pattern performs as an active photodiode and the second photodiode pattern functions as a dummy pixel. The dummy pixel can measure leakage current.
摘要翻译：提供了图像传感器及其制造方法。在图像传感器中，半导体衬底具有由第一器件隔离层限定的像素区域和外围区域。第一和第二光电二极管图案形成在像素区域上并且连接到下金属线到第一和第二读出电路。第一光电二极管图案作为有源光电二极管执行，第二光电二极管图案用作虚拟像素。虚拟像素可以测量泄漏电流。

6. 发明申请

US20100159696A1 MICROLENS MASK OF IMAGE SENSOR AND METHOD FOR FORMING MICROLENS USING THE SAME 审中-公开
标题翻译：图像传感器的MICROLENS掩模和使用其的形成微孔的方法
公开(公告)号：US20100159696A1
公开(公告)日：2010-06-24
申请号：US12644702
申请日：2009-12-22
申请人： Jong Man Kim
发明人： Jong Man Kim
IPC分类号： H01L21/3205 , G03F1/00
CPC分类号： G03F7/0005 , G02B3/0018 , G02B3/0056
摘要： Provided are a microlens mask of an image sensor and a method for forming a microlens using the same. In the method, an insulating layer is formed on a semiconductor substrate comprising a photodiode and a transistor. A passivation layer is formed on the insulating layer. A color filter layer is formed on the insulating layer vertically corresponding to the photodiode through the passivation layer. A microlens photoresist layer is formed over an entire surface of the semiconductor substrate. A microlens mask is formed on the microlens photoresist corresponding to the color filter layer. A one-time exposure process is performed at a light intensity of about 450/0 to about 550/0 dose/focus. The microlens photoresist layer is patterned to form a patterned microlens photoresist layer by removing the photoresist subjected to the exposure process. The patterned microlens photoresist layer is reflowed to form the microlens.
摘要翻译：提供了图像传感器的微透镜掩模和使用其的微透镜的形成方法。在该方法中，在包括光电二极管和晶体管的半导体衬底上形成绝缘层。在绝缘层上形成钝化层。通过钝化层在与光电二极管垂直相对的绝缘层上形成滤色器层。在半导体衬底的整个表面上形成微透镜光致抗蚀剂层。在对应于滤色器层的微透镜光致抗蚀剂上形成微透镜掩模。在约450/0至约550/0剂量/焦点的光强度下进行一次曝光过程。图案化微透镜光致抗蚀剂层以通过去除经受曝光处理的光致抗蚀剂层来形成图案化的微透镜光致抗蚀剂层。图案化的微透镜光致抗蚀剂层被回流以形成微透镜。

7. 发明授权

US08829596B2 Nonvolatile memory device and method of manufacturing the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US08829596B2
公开(公告)日：2014-09-09
申请号：US13602085
申请日：2012-08-31
申请人： Jong Man Kim
发明人： Jong Man Kim
IPC分类号： H01L29/792
CPC分类号： H01L21/28273 , H01L21/76224 , H01L27/11524 , H01L29/42324 , H01L29/66825 , H01L29/7881
摘要： The nonvolatile memory device includes a semiconductor layer including trenches formed in a first direction, isolation layers filling the trenches, and active regions divided by the isolation layer, first insulating patterns formed on the semiconductor substrate in a second direction crossing the first direction, charge storage layer patterns formed over the respective active regions between the first insulating patterns, and second insulating patterns formed on the isolation layers between the charge storage layer patterns.
摘要翻译：非易失性存储器件包括：半导体层，包括沿第一方向形成的沟槽，填充沟槽的隔离层和由隔离层分隔的有源区;在与第一方向交叉的第二方向上形成在半导体衬底上的第一绝缘图案;电荷存储形成在第一绝缘图案之间的各个有源区上的层图案以及形成在电荷存储层图案之间的隔离层上的第二绝缘图案。

8. 发明申请

US20130343001A1 HEAT DISSIPATION SYSTEM FOR POWER MODULE 有权
标题翻译：电源模块散热系统
公开(公告)号：US20130343001A1
公开(公告)日：2013-12-26
申请号：US13588734
申请日：2012-08-17
申请人： Young Hoon Kwak , Jong Man Kim , Young Ho Sohn
发明人： Young Hoon Kwak , Jong Man Kim , Young Ho Sohn
IPC分类号： F28D15/00 , H05K7/20
CPC分类号： H01L23/473 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein is a heat dissipation system for a power module, the heat dissipation system including: first and second heat dissipation plates spaced apart from each other while facing each other, to form a cooling medium flow passage; first and second inflow lines extended to the cooling medium flow passage of the first and second heat dissipation plates, to transfer cooling media flowing therein at different flow rates or different fluxes to the cooling medium flow passage; and first and second inlets respectively connected with the first and second inflow lines to allow the cooling media to flow therein.
摘要翻译：本发明公开了一种用于功率模块的散热系统，该散热系统包括：彼此相对隔开的第一和第二散热板，形成冷却介质流动通道; 第一和第二流入管线延伸到第一和第二散热板的冷却介质流动通道，以将流过其中的不同流量或不同通量的冷却介质转移到冷却介质流动通道; 以及分别与第一和第二流入管线连接的第一和第二入口，以允许冷却介质流入其中。

9. 发明授权

US08493167B2 Transformer having the heat radiation function 失效
标题翻译：具有放热功能的变压器
公开(公告)号：US08493167B2
公开(公告)日：2013-07-23
申请号：US12981066
申请日：2010-12-29
申请人： Jong Man Kim , Kyu Bum Han , Seog Moon Choi
发明人： Jong Man Kim , Kyu Bum Han , Seog Moon Choi
IPC分类号： H01F27/08
CPC分类号： H01F27/085
摘要： Disclosed herein is a transformer having a heat radiation function. The transformer includes a pair of cores having an E-shape and facing and contacting each other to form central pillars and outer peripheral parts, a transforming coil part wound on the central pillars of the pair of cores and dropping voltage, and a heat radiation pipe formed to have a cylindrical shape and positioned inward from the transforming coil part to radiate heat generated from the transforming coil part, thereby well discharging heat generated from the coil.
摘要翻译：这里公开了具有散热功能的变压器。变压器包括一对具有E形并且彼此面对并相互接触以形成中心柱和外围部分的一对铁芯，缠绕在一对铁芯的中心柱上的变压线圈部分和降压电压，以及散热管形成为具有圆筒形状并且位于从变压线圈部向内的位置，以辐射由变压线圈部产生的热量，从而充分地排出线圈产生的热量。

10. 发明授权

US08080840B2 Image sensor and manufacturing method of image sensor 失效
标题翻译：图像传感器和图像传感器的制造方法
公开(公告)号：US08080840B2
公开(公告)日：2011-12-20
申请号：US12563276
申请日：2009-09-21
申请人： Jong Man Kim
发明人： Jong Man Kim
IPC分类号： H01L31/03
CPC分类号： H01L27/14665 , H01L27/14634
摘要： Disclosed are an image sensor and a method for manufacturing the same. The image sensor can include a readout circuitry on a first substrate; an interlayer dielectric layer including at least one metal and contact plug electrically connected to the readout circuitry; and an image sensing device formed on a second substrate, bonded to the interlayer dielectric layer, and provided with a first conductive type conduction layer and a second conductive type conduction layer. An uppermost contact plug in the interlayer dielectric layer has a wall structure extending from an uppermost metal in the interlayer dielectric layer. The top surface of the uppermost contact plug makes contact with the image sensing device and is connected to an image sensing device and an uppermost metal of an adjacent pixel.
摘要翻译：公开了一种图像传感器及其制造方法。图像传感器可以包括在第一基板上的读出电路; 层间电介质层，包括电连接到所述读出电路的至少一个金属和接触插塞; 以及形成在第二基板上的图像感测装置，其接合到所述层间电介质层，并且设置有第一导电类型导电层和第二导电类型导电层。层间电介质层中的最上面的接触插塞具有从层间介质层中的最上面的金属延伸的壁结构。最上面的接触插塞的顶表面与图像感测装置接触并且连接到图像感测装置和相邻像素的最上面的金属。

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