专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110126761A1 CVD REACTOR WITH ENERGY EFFICIENT THERMAL-RADIATION SHIELD 审中-公开
标题翻译：具有能量效率的热辐射屏蔽的CVD反应器
公开(公告)号：US20110126761A1
公开(公告)日：2011-06-02
申请号：US12722073
申请日：2010-03-11
申请人： Jong Gyu LEE , Jong Rock KIM , Sang Woo LEE , Lyle C. WINTERTON
发明人： Jong Gyu LEE , Jong Rock KIM , Sang Woo LEE , Lyle C. WINTERTON
IPC分类号： C23C16/00
CPC分类号： C23C16/24 , C01B33/035 , C23C16/4418 , C23C16/46
摘要： A Siemens type CVD reactor device is provided. One or more radiation shields are disposed between a rod filament and a cooled wall in the reactor. The radiation shield absorbs radiant heat emanating from the heated polysilicon rod during the CVD process, gets heated above 400° C., re-radiate the absorbed heat toward both of the polysilicon rod and the cooled wall, so as to provide thermal shielding effect to the cooled wall. The net energy loss of the polysilicon rod is reduced as much as the amount of energy emitted toward the polysilicon rod from the radiation shield, such that considerable amount of electrical energy of the CVD reactor is reduced and saved. The energy reduction rate goes up much higher if using multiple layered radiation shields, low shielding emissivity, and low thermal conductivity together. The purity of the manufactured polysilicon can be maintained by using thermal shielding material that is stable in a high temperature such as graphite, silicon carbide-coated graphite, and silicon.
摘要翻译：提供了西门子式CVD反应器装置。一个或多个辐射屏蔽设置在反应器中的棒状细丝和冷却壁之间。辐射屏蔽在CVD过程中吸收从加热的多晶硅棒发出的辐射热，被加热到400℃以上，将吸收的热量再次辐射到多晶硅棒和冷却壁两者，以便提供热屏蔽效应冷却的墙壁。多晶硅棒的净能量损失与从辐射屏蔽向多晶硅棒发射的能量的量减少一样多，使得可以减少并节省大量的CVD反应器的电能。如果使用多层辐射屏蔽，低屏蔽辐射率和低热导率，能量减少率就会上升得更高。制造的多晶硅的纯度可以通过使用在高温下稳定的热屏蔽材料来维持，如石墨，碳化硅涂覆的石墨和硅。

IPRDB

热门服务

关于我们

友情链接

联系方式