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1. 发明授权

US07239550B2 Method of programming a non-volatile memory cell 有权
标题翻译：编程非易失性存储单元的方法
公开(公告)号：US07239550B2
公开(公告)日：2007-07-03
申请号：US11255905
申请日：2005-10-20
申请人： Jonathan G. Pabustan , Ben Sheen
发明人： Jonathan G. Pabustan , Ben Sheen
IPC分类号： G11C11/34
CPC分类号： G11C16/0483 , G11C16/12 , G11C16/3459
摘要： The present invention relates to a method of a programming a select non-volatile memory cell in a plurality of serially connected non-volatile memory cells with a serially connected select transistor. Each of the non-volatile memory cells has a control gate for receiving a programming voltage and the select transistor has a select gate for receiving a select voltage. The method comprises applying the programming voltage to the control gate of the select non-volatile memory cell in a program command sequence. The magnitude of the select voltage to the select gate of the select transistor within the program command sequence is then varied. The method can be applied to non-volatile cells in a NAND or NOR architecture.
摘要翻译：本发明涉及一种使用串行连接的选择晶体管对多个串行连接的非易失性存储单元中的选择非易失性存储单元进行编程的方法。每个非易失性存储单元具有用于接收编程电压的控制栅极，并且选择晶体管具有用于接收选择电压的选择栅极。该方法包括以编程命令序列将编程电压施加到选择非易失性存储单元的控制栅极。然后，改变在程序命令序列内选择晶体管的选择栅极的选择电压的大小。该方法可以应用于NAND或NOR架构中的非易失性单元。

2. 发明授权

US07434092B2 Semiconductor memory and method of storing configuration data 有权
标题翻译：半导体存储器和存储配置数据的方法
公开(公告)号：US07434092B2
公开(公告)日：2008-10-07
申请号：US11063316
申请日：2005-02-22
申请人： Chih-Chieh Wang , Jonathan G. Pabustan , Ben Sheen
发明人： Chih-Chieh Wang , Jonathan G. Pabustan , Ben Sheen
IPC分类号： G06F11/00
CPC分类号： G11C29/846 , G06F11/1008 , G11C29/02 , G11C29/027 , G11C29/028 , G11C29/44 , G11C29/70 , G11C2029/0407 , G11C2029/4402 , G11C2229/723
摘要： Redundantly repaired semiconductor memory and method in which the configuration data for the memory is stored in an area of the main memory array which is known to be free of bad bits, along with a signature code which serves as a pointer and verifies the validity of the configuration data. In one disclosed embodiment, the data is stored in a configuration memory which is divided into a plurality of areas of equal size and known starting addresses. The number of areas is greater than the number of permitted repairs, and the areas which do not contain defects are available for storing configuration data including device settings, repair information, and the like.
摘要翻译：冗余修复的半导体存储器和方法，其中用于存储器的配置数据被存储在已知没有坏位的主存储器阵列的区域中，以及用作指针的签名代码，并验证其的有效性配置数据。在一个公开的实施例中，数据被存储在配置存储器中，该配置存储器被分成多个相同大小的区域和已知的起始地址。区域数量大于允许修理的数量，并且不存在缺陷的区域可用于存储包括设备设置，修理信息等的配置数据。

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