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1. 发明授权

US08319196B2 Technique for low-temperature ion implantation 有权
标题翻译：低温离子注入技术
公开(公告)号：US08319196B2
公开(公告)日：2012-11-27
申请号：US13099203
申请日：2011-05-02
申请人： Jonathan G. England , Steven R. Walther , Richard S. Muka , Julian G. Blake , Paul J. Murphy , Reuel B. Liebert
发明人： Jonathan G. England , Steven R. Walther , Richard S. Muka , Julian G. Blake , Paul J. Murphy , Reuel B. Liebert
IPC分类号： H01J37/00
CPC分类号： H01L21/67213 , H01L21/26593 , H01L21/67098 , H01L21/67109 , H01L21/67248
摘要： A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter; a cooling mechanism within the pre-chill station configured to cool a wafer from ambient temperature to a predetermined range less than ambient temperature; a loading assembly coupled to the pre-chill station and the end station; and a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to the predetermined temperature range before any ion implantation into the wafer, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.
摘要翻译：公开了一种用于低温离子注入的技术。在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。设备可以包括位于离子注入机内的端站附近的预冷站; 所述预冷站内的冷却机构被配置为将晶片从环境温度冷却到小于环境温度的预定范围; 耦合到预冷站和终端站的加载组件; 以及与加载组件和冷却机构通信的控制器，用于将晶片加载到预冷站中，将晶片在任何离子注入晶片之前将晶片冷却至预定温度范围，并将冷却的晶片装载到最后冷却晶片经历离子注入工艺的工位。

2. 发明申请

US20110207308A1 TECHNIQUE FOR LOW-TEMPERATURE ION IMPLANTATION 有权
标题翻译：低温离子植入技术
公开(公告)号：US20110207308A1
公开(公告)日：2011-08-25
申请号：US13099203
申请日：2011-05-02
申请人： Jonathan G. ENGLAND , Steven R. Walther , Richard S. Muka , Julian Blake , Paul J. Murphy , Reuel B. Liebert
发明人： Jonathan G. ENGLAND , Steven R. Walther , Richard S. Muka , Julian Blake , Paul J. Murphy , Reuel B. Liebert
IPC分类号： H01L21/265 , H01L21/683
CPC分类号： H01L21/67213 , H01L21/26593 , H01L21/67098 , H01L21/67109 , H01L21/67248
摘要： A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter; a cooling mechanism within the pre-chill station configured to cool a wafer from ambient temperature to a predetermined range less than ambient temperature; a loading assembly coupled to the pre-chill station and the end station; and a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to the predetermined temperature range before any ion implantation into the wafer, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.
摘要翻译：公开了一种用于低温离子注入的技术。在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。设备可以包括位于离子注入机内的端站附近的预冷站; 所述预冷站内的冷却机构被配置为将晶片从环境温度冷却到小于环境温度的预定范围; 耦合到预冷站和终端站的加载组件; 以及与加载组件和冷却机构通信的控制器，用于将晶片加载到预冷站中，将晶片在任何离子注入晶片之前将晶片冷却至预定温度范围，并将冷却的晶片装载到端部冷却晶片经历离子注入工艺的工位。

3. 发明授权

US07935942B2 Technique for low-temperature ion implantation 有权
标题翻译：低温离子注入技术
公开(公告)号：US07935942B2
公开(公告)日：2011-05-03
申请号：US11504367
申请日：2006-08-15
申请人： Jonathan England , Steven R. Walther , Richard S. Muka , Julian Blake , Paul J. Murphy , Reuel B. Liebert
发明人： Jonathan England , Steven R. Walther , Richard S. Muka , Julian Blake , Paul J. Murphy , Reuel B. Liebert
IPC分类号： H01J37/00
CPC分类号： H01L21/67213 , H01L21/26593 , H01L21/67098 , H01L21/67109 , H01L21/67248
摘要： A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.
摘要翻译：公开了一种用于低温离子注入的技术。在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。该装置可以包括位于离子注入机内的端站附近的预冷站。该装置还可以包括在预冷站内的冷却机构。该装置还可以包括耦合到预冷站和终端站的加载组件。该装置还可以包括与加载组件和冷却机构通信的控制器，以将晶片加载到预冷站中，将晶片冷却到预定温度范围，并将冷却的晶片装载到终端站，其中冷却晶片进行离子注入工艺。

4. 发明申请

US20080044938A1 Technique for low-temperature ion implantation 有权
标题翻译：低温离子注入技术
公开(公告)号：US20080044938A1
公开(公告)日：2008-02-21
申请号：US11504367
申请日：2006-08-15
申请人： Jonathan England , Steven R. Walther , Richard S. Muka , Julian Blake , Paul J. Murphy , Reuel B. Liebert
发明人： Jonathan England , Steven R. Walther , Richard S. Muka , Julian Blake , Paul J. Murphy , Reuel B. Liebert
IPC分类号： H01L21/00
CPC分类号： H01L21/67213 , H01L21/26593 , H01L21/67098 , H01L21/67109 , H01L21/67248
摘要： A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.
摘要翻译：公开了一种用于低温离子注入的技术。在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。该装置可以包括位于离子注入机内的端站附近的预冷站。该装置还可以包括在预冷站内的冷却机构。该装置还可以包括耦合到预冷站和终端站的加载组件。该装置还可以包括与加载组件和冷却机构通信的控制器，以将晶片加载到预冷站中，将晶片冷却到预定温度范围，并将冷却的晶片装载到终端站，冷却晶片进行离子注入工艺。

5. 发明授权

US08669540B2 System and method for gas leak control in a substrate holder 有权
标题翻译：衬底保持器中气体泄漏控制的系统和方法
公开(公告)号：US08669540B2
公开(公告)日：2014-03-11
申请号：US12983710
申请日：2011-01-03
申请人： Timothy J. Miller , Richard S. Muka , Julian G. Blake
发明人： Timothy J. Miller , Richard S. Muka , Julian G. Blake
IPC分类号： H01J37/08
CPC分类号： H01L21/6831 , H01L21/67109
摘要： An electrostatic clamp includes a heating block for heating a substrate, the heating block having a first surface disposed toward the substrate and a second surface opposite the first surface. A base is arranged to adjoin at least a portion of the second surface of the heating block. The adjoined base and heating block may mutually define an inner gap between a first portion of the heating block and the base. An outer gap is arranged concentric with the inner gap between a second portion of the heating block and the base, the inner and outer gaps being isolated from one another by a first sealing surface formed between the second surface of the heating block and the base.
摘要翻译：静电夹具包括用于加热衬底的加热块，加热块具有朝向衬底设置的第一表面和与第一表面相对的第二表面。基座被布置成邻接加热块的第二表面的至少一部分。邻接的基座和加热块可以相互限定加热块的第一部分和基座之间的内部间隙。外部间隙与加热块的第二部分和基座之间的内部间隙同心地布置，内部和外部间隙通过形成在加热块的第二表面和基座之间的第一密封表面彼此隔离。

6. 发明授权

US5019233A Sputtering system 失效
标题翻译：溅射系统
公开(公告)号：US5019233A
公开(公告)日：1991-05-28
申请号：US434605
申请日：1989-11-08
申请人： Julian G. Blake , Richard S. Muka , Peter R. Younger
发明人： Julian G. Blake , Richard S. Muka , Peter R. Younger
IPC分类号： H01L21/00 , H01L21/677 , H01L21/687
CPC分类号： H01L21/67748 , H01L21/6719 , H01L21/67201 , H01L21/67751 , H01L21/68707
摘要： A system (10) for the vacuum processing of substrates such as semiconductor wafers which includes a central handling chamber (14), a number of separately pumped and randomly accessed process chambers (16-19), and dual load lock chambers (22) which communicate with the central handling chamber. This configuration permits one batch of substrates to be subjected to load lock evacuation while a second batch, having been previously evacuated, is transferred one at a time to selected process chambers. Substrate transfer from the load locks to the central handling chamber is by means of elevators (42) and by means of a handling assembly (24) which undergoes and Z motion only, with final transfer from the central handling chamber to the process chambers being accomplished by pivoting platen assemblies (66).
摘要翻译：一种用于真空处理诸如半导体晶片的衬底的系统（10），其包括中央处理室（14），多个单独泵送和随机存取的处理室（16-19）和双负载锁定室（22），所述系统与中央处理室通信。这种配置允许一批衬底经受负载锁排空，而先前已被抽空的第二批次被一次一个地转移到选定的处理室。从装载锁到中央处理室的基板转移是借助于电梯（42）和借助于处理组件（24）而进行的，并且只有Z运动才能从中央处理室到处理室的最终传送被完成通过枢转压板组件（66）。

7. 发明申请

US20120168640A1 SYSTEM AND METHOD FOR GAS LEAK CONTROL IN A SUBSTRATE HOLDER 有权
标题翻译：用于气体保护器中气体泄漏控制的系统和方法
公开(公告)号：US20120168640A1
公开(公告)日：2012-07-05
申请号：US12983710
申请日：2011-01-03
申请人： Timothy J. Miller , Richard S. Muka , Julian G. Blake
发明人： Timothy J. Miller , Richard S. Muka , Julian G. Blake
IPC分类号： H01L21/425 , G01N23/00 , H01L21/683
CPC分类号： H01L21/6831 , H01L21/67109
摘要： An electrostatic clamp includes a heating block for heating a substrate, the heating block having a first surface disposed toward the substrate and a second surface opposite the first surface. A base is arranged to adjoin at least a portion of the second surface of the heating block. The adjoined base and heating block may mutually define an inner gap between a first portion of the heating block and the base. An outer gap is arranged concentric with the inner gap between a second portion of the heating block and the base, the inner and outer gaps being isolated from one another by a first sealing surface formed between the second surface of the heating block and the base.
摘要翻译：静电夹具包括用于加热衬底的加热块，加热块具有朝向衬底设置的第一表面和与第一表面相对的第二表面。基座被布置成邻接加热块的第二表面的至少一部分。邻接的基座和加热块可以相互限定加热块的第一部分和基座之间的内部间隙。外部间隙与加热块的第二部分和基座之间的内部间隙同心地布置，内部和外部间隙通过形成在加热块的第二表面和基座之间的第一密封表面彼此隔离。

8. 发明授权

US07993698B2 Techniques for temperature controlled ion implantation 有权
标题翻译：温度控制离子注入技术
公开(公告)号：US07993698B2
公开(公告)日：2011-08-09
申请号：US11525878
申请日：2006-09-23
申请人： Julian Blake , Jonathan England , Scott Holden , Steven R. Walther , Reuel Liebert , Richard S. Muka , Ukyo Jeong , Jinning Liu , Kyu-Ha Shim , Sandeep Mehta
发明人： Julian Blake , Jonathan England , Scott Holden , Steven R. Walther , Reuel Liebert , Richard S. Muka , Ukyo Jeong , Jinning Liu , Kyu-Ha Shim , Sandeep Mehta
IPC分类号： C23C16/48 , C23C16/52 , C23C14/48 , C23C14/54 , C23C14/52
CPC分类号： H01J37/3171 , H01J2237/2001
摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.
摘要翻译：公开了用于温度控制离子注入的技术。在一个特定的示例性实施例中，可以将技术实现为用于温度控制的离子注入的装置。该装置可以包括至少一个热传感器，适于在离子注入机的端站内的离子注入过程期间测量晶片的温度。该装置还可以包括耦合到终端站的热调节单元。该装置还可以包括与热传感器和热调节单元通信的控制器，其中控制器将测量的温度与期望的晶片温度进行比较，并且使得热调节单元基于比较来调节晶片的温度。

9. 发明申请

US20080076194A1 Techniques for temperature controlled ion implantation 有权
标题翻译：温度控制离子注入技术
公开(公告)号：US20080076194A1
公开(公告)日：2008-03-27
申请号：US11525878
申请日：2006-09-23
申请人： Julian Blake , Jonathan England , Scott Holden , Steven R. Walther , Reuel Liebert , Richard S. Muka , Ukyo Jeong , Jinning Liu , Kyu-Ha Shim , Sandeep Mehta
发明人： Julian Blake , Jonathan England , Scott Holden , Steven R. Walther , Reuel Liebert , Richard S. Muka , Ukyo Jeong , Jinning Liu , Kyu-Ha Shim , Sandeep Mehta
IPC分类号： H01L21/425
CPC分类号： H01J37/3171 , H01J2237/2001
摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.
摘要翻译：公开了用于温度控制离子注入的技术。在一个特定的示例性实施例中，可以将技术实现为用于温度控制的离子注入的装置。该装置可以包括至少一个热传感器，适于在离子注入机的端站内的离子注入过程期间测量晶片的温度。该装置还可以包括耦合到终端站的热调节单元。该装置还可以包括与热传感器和热调节单元通信的控制器，其中控制器将测量的温度与期望的晶片温度进行比较，并且使得热调节单元基于比较来调节晶片的温度。

10. 发明授权

US5778968A Method for heating or cooling wafers 失效
标题翻译：加热或冷却晶圆的方法
公开(公告)号：US5778968A
公开(公告)日：1998-07-14
申请号：US654334
申请日：1996-05-28
申请人： Ruth Ann Hendrickson , Christopher Hofmeister , Richard S. Muka
发明人： Ruth Ann Hendrickson , Christopher Hofmeister , Richard S. Muka
IPC分类号： C23C16/458 , C23C16/46 , C23F1/08 , C23F4/00 , C30B25/10 , C30B31/12 , H01L21/00 , H01L21/324 , H01L21/683 , F25B29/00
CPC分类号： C23C16/463 , C23C16/4583 , C23C16/46 , C30B25/10 , C30B31/12 , H01L21/67103
摘要： Gas-loaded thermal conditioning is used to cause the temperature of a substrate to approach that of a high thermal inertia temperature-controlled plate by adjustable pressure of gas above the substrate, so as to press the substrate against the plate. There is no mechanical contact with the substrate except the plate which it rests on, and there is no danger of overheating or overcooling.
摘要翻译：气体热调节用于通过基板上方的气体的可调节压力使基板的温度接近高热惯性温度控制板的温度，以将基板压靠在板上。与基板之间的基板除机械接触之外，不存在过热或过冷的危险。

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