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1. 发明申请

US20110207308A1 TECHNIQUE FOR LOW-TEMPERATURE ION IMPLANTATION 有权
标题翻译：低温离子植入技术
公开(公告)号：US20110207308A1
公开(公告)日：2011-08-25
申请号：US13099203
申请日：2011-05-02
申请人： Jonathan G. ENGLAND , Steven R. Walther , Richard S. Muka , Julian Blake , Paul J. Murphy , Reuel B. Liebert
发明人： Jonathan G. ENGLAND , Steven R. Walther , Richard S. Muka , Julian Blake , Paul J. Murphy , Reuel B. Liebert
IPC分类号： H01L21/265 , H01L21/683
CPC分类号： H01L21/67213 , H01L21/26593 , H01L21/67098 , H01L21/67109 , H01L21/67248
摘要： A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter; a cooling mechanism within the pre-chill station configured to cool a wafer from ambient temperature to a predetermined range less than ambient temperature; a loading assembly coupled to the pre-chill station and the end station; and a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to the predetermined temperature range before any ion implantation into the wafer, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.
摘要翻译：公开了一种用于低温离子注入的技术。在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。设备可以包括位于离子注入机内的端站附近的预冷站; 所述预冷站内的冷却机构被配置为将晶片从环境温度冷却到小于环境温度的预定范围; 耦合到预冷站和终端站的加载组件; 以及与加载组件和冷却机构通信的控制器，用于将晶片加载到预冷站中，将晶片在任何离子注入晶片之前将晶片冷却至预定温度范围，并将冷却的晶片装载到端部冷却晶片经历离子注入工艺的工位。

2. 发明授权

US08319196B2 Technique for low-temperature ion implantation 有权
标题翻译：低温离子注入技术
公开(公告)号：US08319196B2
公开(公告)日：2012-11-27
申请号：US13099203
申请日：2011-05-02
申请人： Jonathan G. England , Steven R. Walther , Richard S. Muka , Julian G. Blake , Paul J. Murphy , Reuel B. Liebert
发明人： Jonathan G. England , Steven R. Walther , Richard S. Muka , Julian G. Blake , Paul J. Murphy , Reuel B. Liebert
IPC分类号： H01J37/00
CPC分类号： H01L21/67213 , H01L21/26593 , H01L21/67098 , H01L21/67109 , H01L21/67248
摘要： A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter; a cooling mechanism within the pre-chill station configured to cool a wafer from ambient temperature to a predetermined range less than ambient temperature; a loading assembly coupled to the pre-chill station and the end station; and a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to the predetermined temperature range before any ion implantation into the wafer, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.
摘要翻译：公开了一种用于低温离子注入的技术。在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。设备可以包括位于离子注入机内的端站附近的预冷站; 所述预冷站内的冷却机构被配置为将晶片从环境温度冷却到小于环境温度的预定范围; 耦合到预冷站和终端站的加载组件; 以及与加载组件和冷却机构通信的控制器，用于将晶片加载到预冷站中，将晶片在任何离子注入晶片之前将晶片冷却至预定温度范围，并将冷却的晶片装载到最后冷却晶片经历离子注入工艺的工位。

3. 发明授权

US07935942B2 Technique for low-temperature ion implantation 有权
标题翻译：低温离子注入技术
公开(公告)号：US07935942B2
公开(公告)日：2011-05-03
申请号：US11504367
申请日：2006-08-15
申请人： Jonathan England , Steven R. Walther , Richard S. Muka , Julian Blake , Paul J. Murphy , Reuel B. Liebert
发明人： Jonathan England , Steven R. Walther , Richard S. Muka , Julian Blake , Paul J. Murphy , Reuel B. Liebert
IPC分类号： H01J37/00
CPC分类号： H01L21/67213 , H01L21/26593 , H01L21/67098 , H01L21/67109 , H01L21/67248
摘要： A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.
摘要翻译：公开了一种用于低温离子注入的技术。在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。该装置可以包括位于离子注入机内的端站附近的预冷站。该装置还可以包括在预冷站内的冷却机构。该装置还可以包括耦合到预冷站和终端站的加载组件。该装置还可以包括与加载组件和冷却机构通信的控制器，以将晶片加载到预冷站中，将晶片冷却到预定温度范围，并将冷却的晶片装载到终端站，其中冷却晶片进行离子注入工艺。

4. 发明申请

US20080044938A1 Technique for low-temperature ion implantation 有权
标题翻译：低温离子注入技术
公开(公告)号：US20080044938A1
公开(公告)日：2008-02-21
申请号：US11504367
申请日：2006-08-15
申请人： Jonathan England , Steven R. Walther , Richard S. Muka , Julian Blake , Paul J. Murphy , Reuel B. Liebert
发明人： Jonathan England , Steven R. Walther , Richard S. Muka , Julian Blake , Paul J. Murphy , Reuel B. Liebert
IPC分类号： H01L21/00
CPC分类号： H01L21/67213 , H01L21/26593 , H01L21/67098 , H01L21/67109 , H01L21/67248
摘要： A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.
摘要翻译：公开了一种用于低温离子注入的技术。在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。该装置可以包括位于离子注入机内的端站附近的预冷站。该装置还可以包括在预冷站内的冷却机构。该装置还可以包括耦合到预冷站和终端站的加载组件。该装置还可以包括与加载组件和冷却机构通信的控制器，以将晶片加载到预冷站中，将晶片冷却到预定温度范围，并将冷却的晶片装载到终端站，冷却晶片进行离子注入工艺。

5. 发明授权

US06762423B2 Methods and apparatus for ion beam neutralization in magnets 有权
标题翻译：磁体中离子束中和的方法和装置
公开(公告)号：US06762423B2
公开(公告)日：2004-07-13
申请号：US10287942
申请日：2002-11-05
申请人： Reuel B. Liebert , Bjorn O. Pedersen
发明人： Reuel B. Liebert , Bjorn O. Pedersen
IPC分类号： G21K510
CPC分类号： H01J37/317
摘要： A magnet assembly is provided for use with an ion beam. The magnet assembly includes a magnet disposed in the path of the ion beam and an electron source. The magnet includes first and second polepieces spaced apart to define a magnet gap through which the ion beam is transported. The electron source is disposed on or in proximity to at least one of the polepieces for producing low energy electrons in the magnet gap. The electron source may include a one or two dimensional array of electron emitters or one or more linear electron emitters, for example. The magnet assembly may be utilized in an ion implanter to limit space charge expansion of the ion beam in the magnet gap.
摘要翻译：提供用于离子束的磁体组件。磁体组件包括设置在离子束路径中的磁体和电子源。磁体包括间隔开的第一和第二极杆，以限定离子束通过其传送的磁隙。电子源设置在至少一个极片上或附近，用于在磁体间隙中产生低能电子。电子源可以包括例如电子发射体或一个或多个线性电子发射体的一维或二维阵列。磁体组件可用于离子注入机中以限制磁体间隙中的离子束的空间电荷膨胀。

6. 发明授权

US4724324A Method and apparatus for ion beam centroid location 失效
标题翻译：离子束中心位置的方法和装置
公开(公告)号：US4724324A
公开(公告)日：1988-02-09
申请号：US934011
申请日：1986-11-24
申请人： Reuel B. Liebert
发明人： Reuel B. Liebert
IPC分类号： H01J37/04 , G01T1/29 , H01J37/317
CPC分类号： H01J37/3171 , G01T1/29
摘要： Method and apparatus for locating the centroid along a line section of an ion beam in a vacuum chamber, requiring no moving parts and requiring only two electrical conductors passing through the wall of the vacuum chamber. An array of Faraday cup current sensors is positioned along a line in the path of the beam at predetermined distances from a reference point, so that each sensor intercepts a component of the beam. A first plurality of resistors each has one end connected to one of the beam current sensors, has a value proportional to the distance between the beam current sensor to which it is connected and the reference point, and has its other end connected to a first common point. A second plurality of resistors having values equal to each other each has one end connected to one of the beam current sensors, has a value much greater than the largest of the first plurality of resistors, and has its other end connected to a second common point. The first and second common points are connected through the wall of the vacuum chamber to a divider. The current supplied to the second common point is divided by the current supplied to the first common point to provide the distance between the reference point and the projected centroid of the ion beam.
摘要翻译：用于沿着真空室中的离子束的线段定位质心的方法和装置，不需要移动部件，并且仅需要穿过真空室的壁的两个电导体。法拉第杯电流传感器的阵列沿着与参考点预定距离的光束路径中的线定位，使得每个传感器拦截光束的分量。第一多个电阻器各自具有连接到一个束电流传感器的一端，其具有与其连接的束电流传感器与参考点之间的距离成比例的值，并且其另一端连接到第一公共端点。具有彼此相等的值的第二多个电阻器具有连接到一个束电流传感器的一端，具有远大于第一多个电阻器中的最大值的值，并且其另一端连接到第二公共点。第一和第二公共点通过真空室的壁连接到分隔件。提供给第二公共点的电流被提供给第一公共点的电流除以提供参考点和离子束的投影质心之间的距离。

7. 发明授权

US4512812A Method for reducing phosphorous contamination in a vacuum processing chamber 失效
标题翻译：减少真空处理室中的磷污染的方法
公开(公告)号：US4512812A
公开(公告)日：1985-04-23
申请号：US534950
申请日：1983-09-22
申请人： Reuel B. Liebert , Carl J. Russo
发明人： Reuel B. Liebert , Carl J. Russo
IPC分类号： C23C14/48 , C23C14/56 , C23C16/44 , C30B31/22 , H01J37/18 , H01J37/317 , H01L21/265 , B08B7/04 , B08B9/00
CPC分类号： C23C14/48 , C23C14/564 , C23C16/4405 , C30B31/22 , H01J37/18
摘要： A method for reducing contamination in a vacuum processing chamber includes introducing into the vacuum chamber a gas selected to react with the contaminant and form a compound more volatile than the contaminant. The volatile compound is then removed from the vacuum chamber, typically by vacuum pumping. In one embodiment, the vacuum chamber is an ion implantation chamber, the contaminant is phosphorous and the gas is water vapor, which reacts with the phosphorous to form phosphine gas or other high vapor pressure phosphorous-containing substances.
摘要翻译：一种减少真空处理室污染的方法，包括将真空室内的气体引入真空室内，以选择与污染物反应并形成比污染物更易挥发的化合物。然后，通常通过真空泵送，从真空室中除去挥发性化合物。在一个实施例中，真空室是离子注入室，污染物是磷，气体是水蒸汽，其与磷反应形成磷化氢气体或其它高含蒸气压的含磷物质。

8. 发明授权

US06020592A Dose monitor for plasma doping system 有权
标题翻译：用于等离子体掺杂系统的剂量监测器
公开(公告)号：US06020592A
公开(公告)日：2000-02-01
申请号：US128370
申请日：1998-08-03
申请人： Reuel B. Liebert , Bjorn O. Pedersen , Matthew Goeckner
发明人： Reuel B. Liebert , Bjorn O. Pedersen , Matthew Goeckner
IPC分类号： C23C14/48 , H01J37/32 , H01L21/265 , H01J37/244
CPC分类号： H01J37/32412 , H01J37/32935 , H01J2237/24405 , H01J2237/31703
摘要： Plasma doping apparatus includes a plasma doping chamber, a platen mounted in the plasma doping chamber for supporting a workpiece such as a semiconductor wafer, a source of ionizable gas coupled to the chamber, an anode spaced from the platen and a pulse source for applying high voltage pulses between the platen and the anode. The high voltage pulses produce a plasma having a plasma sheath in the vicinity of the workpiece. The high voltage pulses accelerate positive ions across the plasma sheath toward the platen for implantation into the workpiece. The plasma doping apparatus includes at least one Faraday cup positioned adjacent to the platen for collecting a sample of the positive ions accelerated across the plasma sheath. The sample is representative of the dose of positive ions implanted into the workpiece.
摘要翻译：等离子体掺杂装置包括等离子体掺杂室，安装在等离子体掺杂室中的压板，用于支撑诸如半导体晶片的工件，耦合到室的可电离气体源，与压板间隔开的阳极和用于施加高压的脉冲源压板和阳极之间的电压脉冲。高压脉冲在工件附近产生具有等离子体护套的等离子体。高电压脉冲将等离子体护套的正离子加速朝向压板，以便植入工件。等离子体掺杂装置包括至少一个位于压板附近的法拉第杯，用于收集跨越等离子体鞘加速的正离子的样品。样品代表植入工件中的正离子剂量。

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