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    • 3. 发明授权
    • Control of carbon nanotube density and tower height in an array
    • 控制阵列中的碳纳米管密度和塔高
    • US07718223B1
    • 2010-05-18
    • US11007913
    • 2004-12-07
    • Lance D. DelzeitJohn F. Schipper
    • Lance D. DelzeitJohn F. Schipper
    • C23C16/00
    • C23C16/26B82Y30/00B82Y40/00C01B32/16C23C16/04C23C16/46Y10S977/742
    • A method for controlling density or tower height of carbon nanotube (CNT) arrays grown in spaced apart first and second regions on a substrate. CNTs having a first density range (or first tower height range) are grown in the first region using a first source temperature range for growth. Subsequently or simultaneously, CNTs having a second density range (or second tower height range), having an average density (or average tower height) in the second region different from the average density (or average tower height) for the first region, are grown in the second region, using supplemental localized heating for the second region. Applications for thermal dissipation and/or dissipation of electrical charge or voltage in an electronic device are discussed.
    • 一种用于控制在衬底上间隔开的第一和第二区域中生长的碳纳米管(CNT)阵列的密度或塔架高度的方法。 使用第一源温度范围生长具有第一密度范围(或第一塔高度范围)的CNT在第一区域中生长。 随后或同时,生长具有与第一区域的平均密度(或平均塔架高度)不同的第二区域中具有平均密度(或平均塔架高度)的第二密度范围(或第二塔架高度范围)的CNT, 在第二区域,对第二区域使用补充局部加热。 讨论了用于电子设备中的电荷或电压的散热和/或消耗的应用。
    • 4. 发明授权
    • Carbon nanotube purification
    • 碳纳米管净化
    • US06972056B1
    • 2005-12-06
    • US10135013
    • 2002-04-25
    • Lance D. DelzeitClement J. Delzeit
    • Lance D. DelzeitClement J. Delzeit
    • B08B7/00B08B7/04C01B31/02
    • B82Y40/00B82Y30/00C01B32/17Y10S977/845
    • A method for cleaning or otherwise removing amorphous carbon and other residues that arise in growth of a carbon nanotube (CNT) array. The CNT array is exposed to a plurality of hydroxyls or hydrogen, produced from a selected vapor or liquid source such as H2O or H2O2, and the hydroxyls or hydrogen (neutral or electrically charged) react with the residues to produce partly or fully dissolved or hydrogenated or hydroxylizated products that can be removed or separated from the CNT array. The hydroxyls or hydrogen can be produced by heating the CNT array, residue and selected vapor or liquid source or by application of an electromagnetic excitation signal with a selected frequency or range of frequencies to dissociate the selected vapor or liquid. The excitation frequency can be “chirped” to cover a selected range of frequencies corresponding to dissociation of the selected vapor or liquid. Sonication may be used to supplement dissociation of the H2O and/or H2O2.
    • 一种用于清洁或以其他方式去除碳纳米管(CNT)阵列生长中产生的无定形碳和其它残余物的方法。 CNT阵列暴露于由选定的蒸气或液体源(例如H 2 O 2或H 2 O 2 O 2)2产生的多个羟基或氢, 并且羟基或氢(中性或带电荷)与残基反应以产生部分或完全溶解或氢化或羟化的产物,其可以从CNT阵列中除去或分离。 可以通过加热CNT阵列,残余物和选定的蒸气或液体源或通过施加具有所选频率或频率范围的电磁激发信号来解离所选择的蒸气或液体来产生羟基或氢。 激发频率可以“啁啾”以覆盖对应于所选择的蒸气或液体的解离的选定频率范围。 超声处理可用于补充H 2 O 2和/或H 2 O 2 O 2的解离。
    • 7. 发明授权
    • Controlled patterning and growth of single wall and multi-wall carbon nanotubes
    • 单壁和多壁碳纳米管的控制图案化和生长
    • US06858197B1
    • 2005-02-22
    • US10099247
    • 2002-03-13
    • Lance D. Delzeit
    • Lance D. Delzeit
    • C01B31/02D01F9/127D01F9/12
    • B82Y30/00B82Y40/00C01B32/162C01B2202/02C01B2202/06C01B2202/36D01F9/1271D01F9/1272D01F9/1273D01F9/1275Y10S977/75Y10S977/843
    • Method and system for producing a selected pattern or array of at least one of a single wall nanotube and/or a multi-wall nanotube containing primarily carbon. A substrate is coated with a first layer (optional) of a first selected metal (e.g., Al and/or Ir) and with a second layer of a catalyst (e.g., Fe, Co, Ni and/or Mo), having selected first and second layer thicknesses provided by ion sputtering, arc discharge, laser ablation, evaporation or CVD. The first layer and/or the second layer may be formed in a desired non-uniform pattern, using a mask with suitable aperture(s), to promote growth of carbon nanotubes in a corresponding pattern. A selected heated feed gas (primarily CH4 or C2Hn with n=2 and/or 4) is passed over the coated substrate and forms primarily single wall nanotubes or multiple wall nanotubes, depending upon the selected feed gas and its temperature. Nanofibers, as well as single wall and multi-wall nanotubes, are produced using plasma-aided growth from the second (catalyst) layer. An overcoating of a selected metal or alloy can be deposited, over the second layer, to provide a coating for the carbon nanotubes grown in this manner.
    • 用于制备主要包含碳的单壁纳米管和/或多壁纳米管中的至少一种的选定图案或阵列的方法和系统。 衬底被涂覆有第一选定金属(例如,Al和/或Ir)和第二层催化剂(例如Fe,Co,Ni和/或Mo)的第一层(任选的) 以及通过离子溅射,电弧放电,激光烧蚀,蒸发或CVD提供的第二层厚度。 可以使用具有适当孔径的掩模以期望的非均匀图案形成第一层和/或第二层以促进相应图案中的碳纳米管的生长。 选择的加热进料气体(主要是具有n = 2和/或4的CH 4或C 2 H n)通过涂覆的基底,主要根据所选择的进料气体及其温度主要形成单壁纳米管或多壁纳米管。 使用来自第二(催化剂)层的等离子体辅助生长,制备纳米纤维以及单壁和多壁纳米管。 可以在第二层上沉积所选择的金属或合金的外涂层,以提供以这种方式生长的碳纳米管的涂层。