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1. 发明授权

US06429151B1 Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers 有权
标题翻译：包括氮化硅的半导体晶片组件，形成氮化硅的方法以及减少半导体晶片上的应力的方法
公开(公告)号：US06429151B1
公开(公告)日：2002-08-06
申请号：US09619468
申请日：2000-07-19
申请人： John T. Moore , Scott J. DeBoer , Mark Fischer
发明人： John T. Moore , Scott J. DeBoer , Mark Fischer
IPC分类号： H01L2131
CPC分类号： H01L21/3185 , H01L21/32 , H01L21/76202
摘要： In one aspect, the invention includes a method of semiconductive wafer processing comprising forming a silicon nitride layer over a surface of a semiconductive wafer, the silicon nitride layer comprising at least two portions, one of said at least two portions generating a compressive force against the other of the at least two portions, and the other of the at least two portions generating a tensile force against the one of the at least two portions. In another aspect, the invention includes a method of reducing stress on semiconductive wafer, the semiconductive wafer having a pair of opposing surfaces and having more silicon nitride over one of the opposing surfaces than over the other of the opposing surfaces, the method comprising providing the silicon nitride over the one of the opposing surfaces to comprise a first portion, a second portion and a third portion, the first, second and third portions being elevationally displaced relative to one another, the second portion being between the first and third portions, the second portion having a greater stoichiometric amount of silicon than the first and third portions, the semiconductive wafer being subjected to less stress than if the silicon nitride over the one of the opposing surfaces had a constant stoichiometric amount of silicon throughout its thickness. In yet other aspects, the invention includes semiconductive wafer assemblies.
摘要翻译：在一个方面，本发明包括半导体晶片处理方法，包括在半导体晶片的表面上形成氮化硅层，所述氮化硅层包括至少两个部分，所述至少两个部分中的一个产生抵抗所述至少两个部分中的另一个，并且所述至少两个部分中的另一部分产生相对于所述至少两个部分中的一个部分的张力。在另一方面，本发明包括减少半导体晶片上的应力的方法，该半导体晶片具有一对相对的表面，并且在相对表面的一个之上具有比另一个相对表面更多的氮化硅，该方法包括提供所述相对表面中的一个上的氮化硅包括第一部分，第二部分和第三部分，所述第一部分，第二部分和第三部分相对于彼此正向移位，所述第二部分位于第一部分和第三部分之间，第二部分具有比第一和第三部分更大的化学计算量的硅，与相对表面上的一个相反的表面上的氮化硅在整个厚度上具有恒定的化学计量的硅时，半导体晶片受到的应力较小。在另一方面，本发明包括半导体晶片组件。

2. 发明授权

US06300253B1 Semiconductor processing methods of forming photoresist over silicon nitride materials, and semiconductor wafer assemblies comprising photoresist over silicon nitride materials 失效
标题翻译：在氮化硅材料上形成光刻胶的半导体加工方法以及包含氮化硅材料上的光致抗蚀剂的半导体晶片组件
公开(公告)号：US06300253B1
公开(公告)日：2001-10-09
申请号：US09057155
申请日：1998-04-07
申请人： John T. Moore , Scott J. DeBoer , Mark Fischer
发明人： John T. Moore , Scott J. DeBoer , Mark Fischer
IPC分类号： H01L2131
CPC分类号： H01L21/31144 , G03F7/091 , H01L21/0214 , H01L21/0217 , H01L21/02211 , H01L21/02271 , H01L21/02304 , H01L21/312
摘要： In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) forming a photoresist over and against the barrier layer. In another aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; c) forming a photoresist over and against the barrier layer; d) exposing the photoresist to a patterned beam of light to render at least one portion of the photoresist more soluble in a solvent than an other portion, the barrier layer being an antireflective surface that absorbs light passing through the photoresist; and e) exposing the photoresist to the solvent to remove the at least one portion while leaving the other portion over the barrier layer. In yet another aspect, the invention includes a semiconductor wafer assembly, comprising: a) a silicon nitride material, the material having a surface; b) a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) a photoresist over and against the barrier layer.
摘要翻译：一方面，本发明包括半导体处理方法，包括：a）提供具有表面的氮化硅材料; b）在所述材料的表面上形成阻挡层，所述阻挡层包含硅和氮; 以及c）在所述阻挡层上形成光致抗蚀剂。另一方面，本发明包括半导体处理方法，包括：a）提供具有表面的氮化硅材料; b）在所述材料的表面上形成阻挡层，所述阻挡层包含硅和氮; c）在阻挡层上形成光致抗蚀剂; d）将所述光致抗蚀剂暴露于图案化的光束以使所述光致抗蚀剂的至少一部分在溶剂中比其它部分更易溶，所述阻挡层是吸收通过所述光致抗蚀剂的光的抗反射表面; 以及e）将所述光致抗蚀剂暴露于所述溶剂以除去所述至少一个部分，同时将所述另一部分留在所述阻挡层上。在另一方面，本发明包括半导体晶片组件，包括：a）氮化硅材料，该材料具有表面; b）在所述材料的表面上的阻挡层，所述阻挡层包含硅和氮; 以及c）在所述阻挡层上并抵靠所述阻挡层的光致抗蚀剂。

3. 发明授权

US06461985B1 Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers 有权
公开(公告)号：US06461985B1
公开(公告)日：2002-10-08
申请号：US09393542
申请日：1999-09-10
申请人： John T. Moore , Scott J. DeBoer , Mark Fischer
发明人： John T. Moore , Scott J. DeBoer , Mark Fischer
IPC分类号： H01L2131
CPC分类号： H01L21/3185 , H01L21/32 , H01L21/76202
摘要： In one aspect, the invention includes a method of semiconductive wafer processing comprising forming a silicon nitride layer over a surface of a semiconductive wafer, the silicon nitride layer comprising at least two portions, one of said at least two portions generating a compressive force against the other of the at least two portions, and the other of the at least two portions generating a tensile force against the one of the at least two portions. In another aspect, the invention includes a method of reducing stress on semiconductive wafer, the semiconductive wafer having a pair of opposing surfaces and having more silicon nitride over one of the opposing surfaces than over the other of the opposing surfaces, the method comprising providing the silicon nitride over the one of the opposing surfaces to comprise a first portion, a second portion and a third portion, the first, second and third portions being elevationally displaced relative to one another, the second portion being between the first and third portions, the second portion having a greater stoichiometric amount of silicon than the first and third portions, the semiconductive wafer being subjected to less stress than if the silicon nitride over the one of the opposing surfaces had a constant stoichiometric amount of silicon throughout its thickness. In yet other aspects, the invention includes semiconductive wafer assemblies.

4. 发明授权

US06300671B1 Semiconductor wafer assemblies comprising photoresist over silicon nitride materials 失效
标题翻译：包括氮化硅材料上的光致抗蚀剂的半导体晶片组件
公开(公告)号：US06300671B1
公开(公告)日：2001-10-09
申请号：US09376886
申请日：1999-08-18
申请人： John T. Moore , Scott J. DeBoer , Mark Fischer
发明人： John T. Moore , Scott J. DeBoer , Mark Fischer
IPC分类号： H01L2358
CPC分类号： H01L21/31144 , G03F7/091 , H01L21/0214 , H01L21/0217 , H01L21/02211 , H01L21/02271 , H01L21/02304 , H01L21/312
摘要： In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) forming a photoresist over and against the barrier layer. In another aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; c) forming a photoresist over and against the barrier layer; d) exposing the photoresist to a patterned beam of light to render at least one portion of the photoresist more soluble in a solvent than an other portion, the barrier layer being an antireflective surface that absorbs light passing through the photoresist; and e) exposing the photoresist to the solvent to remove the at least one portion while leaving the other portion over the barrier layer. In yet another aspect, the invention includes a semiconductor wafer assembly, comprising: a) a silicon nitride material, the material having a surface; b) a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) a photoresist over and against the barrier layer.
摘要翻译：一方面，本发明包括半导体处理方法，包括：a）提供具有表面的氮化硅材料; b）在所述材料的表面上形成阻挡层，所述阻挡层包含硅和氮; 以及c）在所述阻挡层上形成光致抗蚀剂。另一方面，本发明包括半导体处理方法，包括：a）提供具有表面的氮化硅材料; b）在所述材料的表面上形成阻挡层，所述阻挡层包含硅和氮; c）在阻挡层上形成光致抗蚀剂; d）将所述光致抗蚀剂暴露于图案化的光束以使所述光致抗蚀剂的至少一部分在溶剂中比其它部分更易溶，所述阻挡层是吸收通过所述光致抗蚀剂的光的抗反射表面; 以及e）将所述光致抗蚀剂暴露于所述溶剂以除去所述至少一个部分，同时将所述另一部分留在所述阻挡层上。在另一方面，本发明包括半导体晶片组件，包括：a）氮化硅材料，该材料具有表面; b）在所述材料的表面上的阻挡层，所述阻挡层包含硅和氮; 以及c）在所述阻挡层上并抵靠所述阻挡层的光致抗蚀剂。

5. 发明授权

US6093956A Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers 失效
标题翻译：包括氮化硅的半导体晶片组件，形成氮化硅的方法以及减少半导体晶片上的应力的方法
公开(公告)号：US6093956A
公开(公告)日：2000-07-25
申请号：US100530
申请日：1998-06-18
申请人： John T. Moore , Scott J. DeBoer , Mark Fischer
发明人： John T. Moore , Scott J. DeBoer , Mark Fischer
IPC分类号： H01L21/318 , H01L21/32 , H01L21/762 , H01L29/76 , H01L23/16
CPC分类号： H01L21/3185 , H01L21/32 , H01L21/76202
摘要： In one aspect, the invention includes a method of semiconductive wafer processing comprising forming a silicon nitride layer over a surface of a semiconductive wafer, the silicon nitride layer comprising at least two portions, one of the at least two portions generating a compressive force against the other of the at least two portions, and the other of the at least two portions generating a tensile force against the one of the at least two portions. In another aspect, the invention includes a method of reducing stress on semiconductive wafer, the semiconductive wafer having a pair of opposing surfaces and having more silicon nitride over one of the opposing surfaces than over the other of the opposing surfaces, the method comprising providing the silicon nitride over the one of the opposing surfaces to comprise a first portion, a second portion and a third portion, the first, second and third portions being elevationally displaced relative to one another, the second portion being between the first and third portions, the second portion having a greater stoichiometric amount of silicon than the first and third portions, the semiconductive wafer being subjected to less stress than if the silicon nitride over the one of the opposing surfaces had a constant stoichiometric amount of silicon throughout its thickness. In yet other aspects, the invention includes semiconductive wafer assemblies.
摘要翻译：一方面，本发明包括一种半导体晶片处理方法，包括在半导体晶片的表面上形成氮化硅层，所述氮化硅层包括至少两个部分，所述至少两个部分中的一个部分产生抵抗所述至少两个部分中的另一个，并且所述至少两个部分中的另一部分产生相对于所述至少两个部分中的一个部分的张力。在另一方面，本发明包括减少半导体晶片上的应力的方法，该半导体晶片具有一对相对的表面，并且在相对表面的一个之上具有比另一个相对表面更多的氮化硅，该方法包括提供所述相对表面中的一个上的氮化硅包括第一部分，第二部分和第三部分，所述第一部分，第二部分和第三部分相对于彼此正向移位，所述第二部分位于第一部分和第三部分之间，第二部分具有比第一和第三部分更大的化学计算量的硅，与相对表面上的一个相反的表面上的氮化硅在整个厚度上具有恒定的化学计量的硅时，半导体晶片受到的应力较小。在另一方面，本发明包括半导体晶片组件。

6. 发明授权

US5985771A Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers 失效
公开(公告)号：US5985771A
公开(公告)日：1999-11-16
申请号：US57152
申请日：1998-04-07
申请人： John T. Moore , Scott J. DeBoer , Mark Fischer
发明人： John T. Moore , Scott J. DeBoer , Mark Fischer
IPC分类号： H01L21/318 , H01L21/32 , H01L21/762
CPC分类号： H01L21/3185 , H01L21/32 , H01L21/76202
摘要： In one aspect, the invention includes a method of semiconductive wafer processing comprising forming a silicon nitride layer over a surface of a semiconductive wafer, the silicon nitride layer comprising at least two portions, one of said at least two portions generating a compressive force against the other of the at least two portions, and the other of the at least two portions generating a tensile force against the one of the at least two portions. In another aspect, the invention includes a method of reducing stress on semiconductive wafer, the semiconductive wafer having a pair of opposing surfaces and having more silicon nitride over one of the opposing surfaces than over the other of the opposing surfaces, the method comprising providing the silicon nitride over the one of the opposing surfaces to comprise a first portion, a second portion and a third portion, the first, second and third portions being elevationally displaced relative to one another, the second portion being between the first and third portions, the second portion having a greater stoichiometric amount of silicon than the first and third portions, the semiconductive wafer being subjected to less stress than if the silicon nitride over the one of the opposing surfaces had a constant stoichiometric amount of silicon throughout its thickness. In yet other aspects, the invention includes semiconductive wafer assemblies.

7. 发明授权

US5960294A Method of fabricating a semiconductor device utilizing polysilicon grains 失效
标题翻译：制造利用多晶硅晶粒的半导体器件的方法
公开(公告)号：US5960294A
公开(公告)日：1999-09-28
申请号：US6126
申请日：1998-01-13
申请人： John K. Zahurak , Scott J. DeBoer , Randhir P.S. Thakur , Mark Fischer
发明人： John K. Zahurak , Scott J. DeBoer , Randhir P.S. Thakur , Mark Fischer
IPC分类号： H01L21/02 , H01L21/20
CPC分类号： H01L28/84 , H01L28/91
摘要： A method of fabricating capacitors for a dynamic random access memory device reduces double bit failures or shorts in the device. The method includes providing a semiconductor substrate underlying an insulative layer having a plurality of storage cells formed therein electrically connected to the substrate. A first conductive layer of rugged polysilicon, which functions as a first capacitor plate, is formed over the insulative layer in an oxygen-free atmosphere such that the first conductive layer is without natural oxides on the surface thereof. The surface of the first conductive layer in the oxygen-free atmosphere is then conditioned by a rapid thermal nitridization process which forms a silicon nitride film thereon. Thereafter, portions of the first conductive layer are removed from the insulative layer such that the plurality of storage cells are electrically isolated from one another. A dielectric layer is then formed over the first conductive layer and exposed insulative layer, followed by a second conductive layer, functioning as a second capacitor plate, being formed over the dielectric layer to complete the capacitor structure.
摘要翻译：一种制造用于动态随机存取存储器件的电容器的方法减少了器件中的双位故障或短路。该方法包括在其上形成有电连接到基板的多个存储单元的绝缘层下方提供半导体基板。在无氧气氛中的绝缘层上形成用作第一电容器板的凹凸多晶硅的第一导电层，使得第一导电层在其表面上不具有天然氧化物。然后在无氧气氛中的第一导电层的表面通过在其上形成氮化硅膜的快速热氮化工艺进行调理。此后，将第一导电层的部分从绝缘层移除，使得多个存储单元彼此电隔离。然后在第一导电层和暴露的绝缘层上形成电介质层，然后在电介质层上形成用作第二电容器板的第二导电层，以完成电容器结构。

8. 发明授权

US06635530B2 Methods of forming gated semiconductor assemblies 失效
标题翻译：形成门控半导体组件的方法
公开(公告)号：US06635530B2
公开(公告)日：2003-10-21
申请号：US09057148
申请日：1998-04-07
申请人： Mark A. Helm , Mark Fischer , John T. Moore , Scott Jeffrey DeBoer
发明人： Mark A. Helm , Mark Fischer , John T. Moore , Scott Jeffrey DeBoer
IPC分类号： H01L21336
CPC分类号： H01L29/7881 , H01L21/28273 , H01L29/511
摘要： The invention includes a method of forming a gated semiconductor assembly. A first transistor gate layer is formed over a substrate. A silicon nitride layer is formed over the first transistor gate layer. The silicon nitride layer comprises a first portion and a second portion elevationally displaced above the first portion. The first portion has less electrical resistance than the second portion and a different stoichiometric composition than the second portion. The first portion is physically against the second portion. A second transistor gate layer is formed over the silicon nitride layer.
摘要翻译：本发明包括一种形成门控半导体组件的方法。在衬底上形成第一晶体管栅极层。在第一晶体管栅极层上形成氮化硅层。氮化硅层包括第一部分和在第一部分上方向上移位的第二部分。第一部分具有比第二部分更少的电阻和不同于第二部分的化学计量组成。第一部分物理地抵靠第二部分。在氮化硅层上形成第二晶体管栅极层。

9. 发明授权

US06677661B1 Semiconductive wafer assemblies 失效
标题翻译：半导体晶片组件
公开(公告)号：US06677661B1
公开(公告)日：2004-01-13
申请号：US09429220
申请日：1999-10-28
申请人： Scott Jeffrey DeBoer , John T. Moore , Mark Fischer , Randhir P. S. Thakur
发明人： Scott Jeffrey DeBoer , John T. Moore , Mark Fischer , Randhir P. S. Thakur
IPC分类号： H01L2358
CPC分类号： H01L21/28123 , H01L21/0276 , H01L21/31144 , H01L21/3185
摘要： In one aspect, the invention includes a semiconductor fabrication process, comprising: a) providing a substrate; b) forming a layer of silicon nitride over the substrate, the layer having a thickness; and c) enriching a portion of the thickness of the silicon nitride layer with silicon, the portion comprising less than or equal to about 95% of the thickness of the layer of silicon nitride. In another aspect, the invention includes a semiconductor fabrication process, comprising: a) providing a substrate; b) forming a layer of silicon nitride over the substrate, the layer having a thickness; and c) increasing a refractive index of a first portion of the thickness of the silicon nitride layer relative to a refractive index of a second portion of the silicon nitride layer, the first portion comprising less than or equal to about 95% of the thickness of the silicon nitride layer. In yet another aspect, the invention includes semiconductor wafer assembly, comprising: a) a semiconductor wafer substrate; and b) a layer of silicon nitride over the substrate, the layer comprising a thickness and two portions elevationally displaced relative to one another, a first of the two portions having less resistance than a second of the two portions, the first portion comprising less than or equal to about 95% of the thickness of the silicon nitride layer.
摘要翻译：一方面，本发明包括半导体制造工艺，其包括：a）提供衬底; b）在衬底上形成氮化硅层，该层具有厚度; 以及c）用硅富集氮化硅层的一部分厚度，该部分包含小于或等于氮化硅层厚度的约95％。在另一方面，本发明包括半导体制造工艺，其包括：a）提供衬底; b）在衬底上形成氮化硅层，该层具有厚度; 以及c）相对于所述氮化硅层的第二部分的折射率增加所述氮化硅层的厚度的第一部分的折射率，所述第一部分包括小于或等于所述氮化硅层的厚度的约95％氮化硅层。在另一方面，本发明包括半导体晶片组件，包括：a）半导体晶片衬底; 以及b）在所述衬底上的一层氮化硅，所述层包括相对于彼此高度位移的厚度和两个部分，所述两个部分中的第一部分具有比所述两个部分中的第二部分更小的电阻，所述第一部分包括小于或等于氮化硅层厚度的约95％。

10. 发明授权

US06670288B1 Methods of forming a layer of silicon nitride in a semiconductor fabrication process 失效
标题翻译：在半导体制造工艺中形成氮化硅层的方法
公开(公告)号：US06670288B1
公开(公告)日：2003-12-30
申请号：US09604850
申请日：2000-06-27
申请人： Scott Jeffrey DeBoer , John T. Moore , Mark Fischer , Randhir P. S. Thakur
发明人： Scott Jeffrey DeBoer , John T. Moore , Mark Fischer , Randhir P. S. Thakur
IPC分类号： H01L2131
CPC分类号： H01L21/28123 , H01L21/0276 , H01L21/31144 , H01L21/3185
摘要： In one aspect, the invention includes a semiconductor fabrication process, comprising: a) providing a substrate; b) forming a layer of silicon nitride over the substrate, the layer having a thickness; and c) enriching a portion of the thickness of the silicon nitride layer with silicon, the portion comprising less than or equal to about 95% of the thickness of the layer of silicon nitride. In another aspect, the invention includes a semiconductor fabrication process, comprising: a) providing a substrate; b) forming a layer of silicon nitride over the substrate, the layer having a thickness; and c) increasing a refractive index of a first portion of the thickness of the silicon nitride layer relative to a refractive index of a second portion of the silicon nitride layer, the first portion comprising less than or equal to about 95% of the thickness of the silicon nitride layer. In yet another aspect, the invention includes semiconductor wafer assembly, comprising: a) a semiconductor wafer substrate; and b) a layer of silicon nitride over the substrate, the layer comprising a thickness and two portions elevationally displaced relative to one another, a first of the two portions having less resistance than a second of the two portions, the first portion comprising less than or equal to about 95% of the thickness of the silicon nitride layer.
摘要翻译：一方面，本发明包括半导体制造工艺，其包括：a）提供衬底; b）在衬底上形成氮化硅层，该层具有厚度; 以及c）用硅富集氮化硅层的一部分厚度，该部分包含小于或等于氮化硅层厚度的约95％。在另一方面，本发明包括半导体制造工艺，其包括：a）提供衬底; b）在衬底上形成氮化硅层，该层具有厚度; 以及c）相对于所述氮化硅层的第二部分的折射率增加所述氮化硅层的厚度的第一部分的折射率，所述第一部分包括小于或等于所述氮化硅层的厚度的约95％氮化硅层。在另一方面，本发明包括半导体晶片组件，包括：a）半导体晶片衬底; 以及b）在所述衬底上的一层氮化硅，所述层包括相对于彼此高度位移的厚度和两个部分，所述两个部分中的第一部分具有比所述两个部分中的第二部分更小的电阻，所述第一部分包括小于或等于氮化硅层厚度的约95％。

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