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    • 2. 发明授权
    • Support frame for substrates
    • 基板支撑架
    • US06371712B1
    • 2002-04-16
    • US09693613
    • 2000-10-20
    • John M. WhiteLarry ChangEmanuel Beer
    • John M. WhiteLarry ChangEmanuel Beer
    • F27D500
    • C30B31/14C23C16/4583C30B25/12F27D5/00
    • The present invention generally provides a system and method for supporting a substrate having a support frame that minimizes deflection encountered during thermal expansion in a processing chamber. In one embodiment, the support frame comprises one or more longitudinal members coupled to one or more transverse members. The transverse members preferably define a supporting surface on which a heated susceptor is mounted. The longitudinal member is preferably disposed below the heated susceptor, thus minimizing thermal expansion of the longitudinal member. Spacers made of thermally conductive material may be disposed at appropriate locations along the members to provide more uniform distribution of heat within the members.
    • 本发明通常提供一种用于支撑具有支撑框架的基板的系统和方法,该支撑框架最小化在处理室中热膨胀期间遇到的挠曲。 在一个实施例中,支撑框架包括联接到一个或多个横向构件的一个或多个纵向构件。 横向构件优选地限定了其上安装有加热的基座的支撑表面。 纵向构件优选地设置在加热的基座下方,从而最小化纵向构件的热膨胀。 由导热材料制成的隔板可以沿着构件设置在适当的位置,以在构件内提供更均匀的热分布。
    • 4. 发明授权
    • Automated substrate processing system
    • 自动基板处理系统
    • US06847730B1
    • 2005-01-25
    • US09677530
    • 2000-10-02
    • Emanuel BeerJohn M. White
    • Emanuel BeerJohn M. White
    • B25J9/16B65G49/06H01L21/02H01L21/677H01L21/68G06K9/00
    • H01L21/681G05B2219/37555G05B2219/37575G05B2219/37576G05B2219/40622G05B2219/45031
    • A substrate handling apparatus includes a transfer arm having a substrate support. The apparatus includes at least one image acquisition sensor configured to acquire images of a substrate supported by the substrate support. In addition, the apparatus includes a controller coupled to the image acquisition sensor and configured to control the image acquisition sensor to acquire at least one image of the substrate supported on the substrate support. The controller is further configured to receive the images acquired by the image acquisition sensor and to determine an initial position of the substrate based on the acquired images. The controller is further coupled to the substrate support to control movement thereof to move the substrate to a new position based on the substrate's initial position. The apparatus also can be used to determine a substrate identification and to detect certain substrate defects either before or after processing the substrate in a thermal processing chamber. A method of positioning a substrate on a transfer arm also is disclosed.
    • 基板处理装置包括具有基板支撑件的输送臂。 该装置包括至少一个图像采集传感器,被配置为获取由基板支撑件支撑的基板的图像。 另外,该装置包括耦合到图像采集传感器并被配置为控制图像采集传感器以获取支撑在基板支撑件上的基板的至少一个图像的控制器。 控制器还被配置为接收由图像采集传感器获取的图像,并且基于所获取的图像来确定基板的初始位置。 控制器还耦合到衬底支撑件以控制其移动,以基于衬底的初始位置将衬底移动到新的位置。 该装置还可以用于确定衬底识别并且在热处理室中处理衬底之前或之后检测某些衬底缺陷。 公开了一种将衬底定位在转移臂上的方法。
    • 5. 发明授权
    • Automated substrate processing system
    • 一种自动化的基板处理系统
    • US06215897B1
    • 2001-04-10
    • US09082413
    • 1998-05-20
    • Emanuel BeerJohn M. White
    • Emanuel BeerJohn M. White
    • G06K900
    • H01L21/681G05B2219/37555G05B2219/37575G05B2219/37576G05B2219/40622G05B2219/45031
    • A substrate handling apparatus includes a transfer arm having a substrate support. The apparatus includes at least one image acquisition sensor configured to acquire images of a substrate supported by the substrate support. In addition, the apparatus includes a controller coupled to the image acquisition sensor and configured to control the image acquisition sensor to acquire at least one image of the substrate supported on the substrate support. The controller is further configured to receive the images acquired by the image acquisition sensor and to determine an initial position of the substrate based on the acquired images. The controller is further coupled to the substrate support to control movement thereof to move the substrate to a new position based on the substrate's initial position. The apparatus also can be used to determine a substrate identification and to detect certain substrate defects either before or after processing the substrate in a thermal processing chamber. A method of positioning a substrate on a transfer arm also is disclosed.
    • 基板处理装置包括具有基板支撑件的输送臂。 该装置包括至少一个图像采集传感器,被配置为获取由基板支撑件支撑的基板的图像。 另外,该装置包括耦合到图像采集传感器并被配置为控制图像采集传感器以获取支撑在基板支撑件上的基板的至少一个图像的控制器。 控制器还被配置为接收由图像采集传感器获取的图像,并且基于所获取的图像来确定基板的初始位置。 控制器还耦合到衬底支撑件以控制其移动,以基于衬底的初始位置将衬底移动到新的位置。 该装置还可以用于确定衬底识别并且在热处理室中处理衬底之前或之后检测某些衬底缺陷。 公开了一种将衬底定位在转移臂上的方法。
    • 10. 发明申请
    • Apparatus and method of shaping profiles of large-area PECVD electrodes
    • 大面积PECVD电极成形轮廓的装置和方法
    • US20060005771A1
    • 2006-01-12
    • US11143506
    • 2005-06-02
    • John WhiteEmanuel BeerWei ChangRobin TinerSoo Choi
    • John WhiteEmanuel BeerWei ChangRobin TinerSoo Choi
    • C23C16/00C23F1/00
    • C23C16/4583H01J37/3244H01J2237/3325
    • An apparatus and method for shaping profiles of a large-area PECVD electrode is provided. A plasma-enhanced CVD chamber for processing a large-area substrate is first provided. The chamber includes a lower electrode that supports a large area substrate. The lower electrode is shaped to selectively conform the supported substrate in a selected orientation under operating conditions. The orientation may be either planar or nonplanar. The substrate complies with the shape of the electrode so the substrate is substantially parallel to an upper electrode in the chamber, and/or to a gas diffusion plate in the chamber. The lower electrode comprises a substrate support fabricated from a material of insufficient strength to support itself at operating temperatures and pressure in the chamber. The shape of the substrate support is adjusted by modifying the dimensions and/or planarity of a supporting base structure, and/or by appropriately varying the thickness of the substrate support.
    • 提供了一种用于形成大面积PECVD电极的轮廓的装置和方法。 首先提供用于处理大面积基板的等离子体增强CVD室。 该室包括支撑大面积基板的下电极。 下电极被成形为在操作条件下以选定的方向选择性地使受支撑的衬底符合。 取向可以是平面或非平面的。 基板符合电极的形状,因此基板基本上平行于腔室中的上部电极,和/或腔室中的气体扩散板。 下电极包括由强度不足的材料制成的衬底支撑件,以在腔室中的操作温度和压力下自身支撑。 通过改变支撑基底结构的尺寸和/或平面度和/或通过适当地改变基底支撑件的厚度来调节基底支撑件的形状。