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1. 发明申请

US20050231557A1 Micro-fluid ejection assemblies 有权
标题翻译：微流体喷射组件
公开(公告)号：US20050231557A1
公开(公告)日：2005-10-20
申请号：US10823939
申请日：2004-04-14
申请人： John Krawczyk , Andrew McNees , James Mrvos , Carl Sullivan
发明人： John Krawczyk , Andrew McNees , James Mrvos , Carl Sullivan
IPC分类号： B41J2/16 , C23F1/00
CPC分类号： B41J2/14129 , B41J2/1603 , B41J2/1628
摘要： A micro-fluid ejection assembly including a silicon substrate having accurately formed fluid paths therein. The fluid paths are formed by a deep reactive ion etching process conducted on a substrate having a surface characteristic before etching selected from the group consisting of a dielectric layer thickness of no more than about 5000 Angstroms, and a substantially dielectric material free pitted surface wherein a root mean square depth of surface pitting is less than about 500 Angstroms and a maximum surface pitting depth is no more than about 2500 Angstroms. Fluid paths in such substrates having improved flow characteristics for more reliable fluid ejection operations.
摘要翻译：一种微流体喷射组件，包括其中具有精确形成的流体路径的硅衬底。流体路径是通过在具有不超过约5000埃的电介质层厚度的蚀刻之前在具有蚀刻前的表面特性的基底上进行的深反应离子蚀刻工艺形成的，以及基本上不含介质材料的凹坑表面，其中a 表面点蚀的均方根深度小于约500埃，最大表面点蚀深度不超过约2500埃。这种衬底中的流体路径具有改进的流动特性以便更可靠的流体喷射操作。

2. 发明申请

US20060054590A1 Methods of deep reactive ion etching 失效
公开(公告)号：US20060054590A1
公开(公告)日：2006-03-16
申请号：US10938009
申请日：2004-09-10
申请人： John Krawczyk , Andrew McNees , James Mrvos
发明人： John Krawczyk , Andrew McNees , James Mrvos
IPC分类号： B41J2/04 , G11B5/127
CPC分类号： B41J2/1631 , B41J2/1603 , B41J2/1628
摘要： A method of substantially simultaneously forming at least two fluid supply slots through a thickness of semiconductor substrate from a first surface to a second surface thereof. The method includes the steps of applying a photoresist layer to the first surface of the semiconductor substrate. The photoresist layer is patterned and developed using a gray scale mask for a first fluid supply slot. The semiconductor substrate is then reactive ion etched, to form the at least two fluid supply slots through the thickness of the substrate. The first fluid supply slot is substantially wider than the second fluid supply slot, and the first and second fluid supply slots are etched through the substrate at substantially the same rate.

3. 发明申请

US20060054592A1 Fluid ejection device structures and methods therefor 失效
公开(公告)号：US20060054592A1
公开(公告)日：2006-03-16
申请号：US11026353
申请日：2004-12-30
申请人： John Krawczyk , Andrew McNees , James Mrvos , David Bernard
发明人： John Krawczyk , Andrew McNees , James Mrvos , David Bernard
IPC分类号： G01D15/00 , G11B5/127
CPC分类号： B41J2/1603 , B41J2/1628 , B41J2/1631 , G01D15/00
摘要： Methods of forming a fluid channel in a semiconductor substrate may include providing a semiconductor substrate having a backside and a device side, wherein the device side is configured to secure ink ejecting devices thereon and applying a material layer to the backside of the semiconductor substrate. The method may further include providing a gray scale mask configured with a pattern corresponding to a fluid channel having a plurality of slots, exposing the material layer to sufficient light radiation energy through the gray scale mask and etching the exposed material layer and the semiconductor substrate through to the device side of the semiconductor substrate.

4. 发明申请

US20060077221A1 Microfluidic substrates having improved fluidic channels 有权
标题翻译：具有改进的流体通道的微流体基底
公开(公告)号：US20060077221A1
公开(公告)日：2006-04-13
申请号：US11281090
申请日：2005-11-17
申请人： Karthik Vaideeswaran , Andrew McNees , John Krawczyk , James Mrvos , Cory Hammond , Mark Doerre , Jason Vanderpool , Girish Patil , Christopher Money , Gary Williams , Richard Warner
发明人： Karthik Vaideeswaran , Andrew McNees , John Krawczyk , James Mrvos , Cory Hammond , Mark Doerre , Jason Vanderpool , Girish Patil , Christopher Money , Gary Williams , Richard Warner
IPC分类号： B41J2/015
CPC分类号： B41J2/1632 , B41J2/14145 , B41J2/1603 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2/1645 , B41J2/1646
摘要： A method for improving fluidic flow for a microfluidic device having a through hole or slot therein. The method includes the steps of forming one or more openings through at least part of a thickness of a substrate from a first surface to an opposite second surface using a reactive ion etching process whereby an etch stop layer is applied to side wall surfaces in the one or more openings during alternating etching and passivating steps as the openings are etched through at least a portion of the substrate. Substantially all of the etch stop layer coating is removed from the side wall surfaces by treating the side wall surfaces using a method selected from chemical treatment and mechanical treatment, whereby a surface energy of the treated side wall surfaces is increased relative to a surface energy of the side wall surfaces containing the etch stop layer coating.
摘要翻译：一种用于改善其中具有通孔或槽的微流体装置的流体流动的方法。该方法包括以下步骤：使用反应离子蚀刻工艺从基板的第一表面至相对的第二表面形成穿过衬底的至少一部分厚度的一个或多个开口，由此将蚀刻停止层施加到一个侧壁表面或者在交替蚀刻和钝化步骤期间，当开口被蚀刻通过衬底的至少一部分时，可以有更多的开口。通过使用选自化学处理和机械处理的方法处理侧壁表面，从侧壁表面去除基本上所有的蚀刻停止层涂层，由此所处理的侧壁表面的表面能相对于所述侧壁表面包含所述蚀刻停止层涂层。

5. 发明申请

US20050093912A1 Methods for improving flow through fluidic channels 有权
标题翻译：改善通过流体通道流动的方法
公开(公告)号：US20050093912A1
公开(公告)日：2005-05-05
申请号：US10701225
申请日：2003-11-04
申请人： Karthik Vaideeswaran , Andrew McNees , John Krawczyk , James Mrvos , Cory Hammond , Mark Doerre , Jason Vanderpool , Girish Patil , Christopher Money , Gary Williams , Richard Warner
发明人： Karthik Vaideeswaran , Andrew McNees , John Krawczyk , James Mrvos , Cory Hammond , Mark Doerre , Jason Vanderpool , Girish Patil , Christopher Money , Gary Williams , Richard Warner
IPC分类号： B41J2/14 , B41J2/16 , B41J2/015
CPC分类号： B41J2/1632 , B41J2/14145 , B41J2/1603 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2/1645 , B41J2/1646
摘要： A method for improving fluidic flow for a microfluidic device having a through hole or slot therein. The method includes the steps of forming one or more openings through at least part of a thickness of a substrate from a first surface to an opposite second surface using a reactive ion etching process whereby an etch stop layer is applied to side wall surfaces in the one or more openings during alternating etching and passivating steps as the openings are etched through at least a portion of the substrate. Substantially all of the etch stop layer coating is removed from the side wall surfaces by treating the side wall surfaces using a method selected from chemical treatment and mechanical treatment, whereby a surface energy of the treated side wall surfaces is increased relative to a surface energy of the side wall surfaces containing the etch stop layer coating.
摘要翻译：一种用于改善其中具有通孔或槽的微流体装置的流体流动的方法。该方法包括以下步骤：使用反应离子蚀刻工艺从基板的第一表面至相对的第二表面形成穿过衬底的至少一部分厚度的一个或多个开口，由此将蚀刻停止层施加到一个侧壁表面或者在交替蚀刻和钝化步骤期间，当开口被蚀刻通过衬底的至少一部分时，可以有更多的开口。通过使用选自化学处理和机械处理的方法处理侧壁表面，从侧壁表面去除基本上所有的蚀刻停止层涂层，由此所处理的侧壁表面的表面能相对于所述侧壁表面包含所述蚀刻停止层涂层。

6. 发明授权

US09132639B2 Method for fabricating fluid ejection device 有权
标题翻译：制造流体喷射装置的方法
公开(公告)号：US09132639B2
公开(公告)日：2015-09-15
申请号：US13097566
申请日：2011-04-29
申请人： David Bernard , Andrew McNees , James Mrvos
发明人： David Bernard , Andrew McNees , James Mrvos
IPC分类号： B41J2/16 , B41J2/14 , H01L21/265
CPC分类号： B41J2/1621 , B41J2/1603 , B41J2/1632 , B41J2/1634 , H01L21/265 , Y10T29/42 , Y10T29/49083 , Y10T29/49155 , Y10T29/49165 , Y10T29/49401
摘要： A method for fabricating an ejection chip of a fluid ejection device includes forming a drive circuitry layer on a substrate, fabricating at least one fluid ejection element on the substrate, forming at least one slot within a top portion of the substrate, filling each slot of the at least one slot with a protective material, grinding the substrate from a bottom portion of the substrate up to a predetermined height, removing the protective material from the each slot of the at least one slot, and laminating a flow feature layer and a nozzle plate over the substrate having the at least one slot.
摘要翻译：用于制造流体喷射装置的喷射芯片的方法包括在基板上形成驱动电路层，在基板上制造至少一个流体喷射元件，在基板的顶部部分内形成至少一个槽，所述至少一个狭槽具有保护材料，将所述基底从所述基底的底部研磨到预定高度，从所述至少一个狭槽的每个槽移除所述保护材料，以及层压流动特征层和喷嘴在具有至少一个槽的衬底上方。

7. 发明授权

US09403365B2 Method for fabricating fluid ejection device 有权
标题翻译：制造流体喷射装置的方法
公开(公告)号：US09403365B2
公开(公告)日：2016-08-02
申请号：US13097549
申请日：2011-04-29
申请人： David Bernard , Andrew Mcnees , James Mrvos
发明人： David Bernard , Andrew Mcnees , James Mrvos
IPC分类号： B41J2/16 , H01L21/265
CPC分类号： B41J2/1433 , B41J2/04541 , B41J2/1603 , B41J2/162 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2/1632 , B41J2/164 , B41J2/1645 , B41J2202/03 , B41J2202/12 , B41J2202/13 , B41J2202/19 , B41J2202/22 , H01L21/265 , Y10T29/49083 , Y10T29/49401
摘要： A method for fabricating a fluid ejection device includes forming a drive circuitry layer on a substrate, fabricating at least one fluid ejection element on a top portion of the substrate, grinding the substrate from a bottom portion of the substrate up to a predetermined height, etching the top portion of the substrate to configure at least one slot within the top portion of the substrate, depositing a layer of an etch-stop material over the top portion of the substrate while filling the at least one slot with the etch-stop material, etching the bottom portion of the substrate to configure at least one fluid feed trench within the bottom portion of the substrate, removing the layer of the etch-stop material from the top portion of the substrate, and laminating a flow feature layer and a nozzle plate as a single unit over the top portion of the substrate.
摘要翻译：一种用于制造流体喷射装置的方法包括在基板上形成驱动电路层，在基板的顶部上制造至少一个流体喷射元件，将基板从基板底部研磨至预定高度，蚀刻衬底的顶部以在衬底的顶部部分内配置至少一个槽，在衬底的顶部部分沉积一层蚀刻停止材料，同时用该蚀刻停止材料填充该至少一个槽，蚀刻衬底的底部以在衬底的底部部分内配置至少一个流体馈送沟槽，从衬底的顶部去除蚀刻停止材料层，并层压流动特征层和喷嘴板作为衬底顶部上的单个单元。

8. 发明申请

US20050205517A1 Method for making a micro-fluid ejection device 有权
标题翻译：制造微流体喷射装置的方法
公开(公告)号：US20050205517A1
公开(公告)日：2005-09-22
申请号：US10941404
申请日：2004-09-15
申请人： John Krawczyk , James Mrvos , Girish Patil , Jason Vanderpool , Brian Hart , Christopher Money , Jeanne Singh , Karthik Vaideeswaran
发明人： John Krawczyk , James Mrvos , Girish Patil , Jason Vanderpool , Brian Hart , Christopher Money , Jeanne Singh , Karthik Vaideeswaran
IPC分类号： B41J2/16 , B41J2/05 , B44C1/22 , G11B5/127 , H01L21/302
CPC分类号： B41J2/1603 , B41J2/1628 , B41J2/1631 , B41J2/1645 , B81B2201/052 , B81C1/00531
摘要： A method of etching a semiconductor substrate. The method includes the steps of applying a photoresist etch mask layer to a device surface of the substrate. A select first area of the photoresist etch mask is masked, imaged and developed. A select second area of the photoresist etch mask layer is irradiated to assist in post etch stripping of the etch mask layer from the select second area. The substrate is etched to form fluid supply slots through a thickness of the substrate. At least the select second area of the etch mask layer is removed from the substrate, whereby mask layer residue formed from the select second area of the etch mask layer is significantly reduced.
摘要翻译：蚀刻半导体衬底的方法。该方法包括以下步骤：将光致抗蚀剂蚀刻掩模层施加到衬底的器件表面。光刻胶蚀刻掩模的选择第一区被掩蔽，成像和显影。照射光致抗蚀剂蚀刻掩模层的选择的第二区域以辅助蚀刻掩模层从选择的第二区域的后蚀刻剥离。蚀刻基板以形成通过基板的厚度的流体供给槽。至少蚀刻掩模层的选择第二区域从衬底去除，由此从蚀刻掩模层的选择的第二区域形成的掩模层残留物显着减少。

9. 发明申请

US20070259292A1 METHOD FOR MAKING A MICRO-FLUID EJECTION DEVICE 有权
标题翻译：制造微流体喷射装置的方法
公开(公告)号：US20070259292A1
公开(公告)日：2007-11-08
申请号：US11780234
申请日：2007-07-19
申请人： John Krawczyk , James Mrvos , Girish Patil , Jason Vanderpool , Brian Hart , Christopher Money , Jeanne Singh , Karthik Vaideeswaran
发明人： John Krawczyk , James Mrvos , Girish Patil , Jason Vanderpool , Brian Hart , Christopher Money , Jeanne Singh , Karthik Vaideeswaran
IPC分类号： G03C5/00 , H01L21/461 , H01L21/302
CPC分类号： B41J2/1603 , B41J2/1628 , B41J2/1631 , B41J2/1645 , B81B2201/052 , B81C1/00531
摘要： A method of etching a semiconductor substrate. The method includes the steps of applying a photoresist etch mask layer to a device surface of the substrate. A select first area of the photoresist etch mask is masked, imaged and developed. A select second area of the photoresist etch mask layer is irradiated to assist in post etch stripping of the etch mask layer from the select second area. The substrate is etched to form fluid supply slots through a thickness of the substrate. At least the select second area of the etch mask layer is removed from the substrate, whereby mask layer residue formed from the select second area of the etch mask layer is significantly reduced.
摘要翻译：蚀刻半导体衬底的方法。该方法包括以下步骤：将光致抗蚀剂蚀刻掩模层施加到衬底的器件表面。光刻胶蚀刻掩模的选择第一区被掩蔽，成像和显影。照射光致抗蚀剂蚀刻掩模层的选择的第二区域以辅助蚀刻掩模层从选择的第二区域的后蚀刻剥离。蚀刻基板以形成通过基板的厚度的流体供给槽。至少蚀刻掩模层的选择第二区域从衬底去除，由此从蚀刻掩模层的选择的第二区域形成的掩模层残留物显着减少。

10. 发明申请

US20060001713A1 Inkjet print cartridge having an adhesive with improved dimensional control 有权
标题翻译：具有改进的尺寸控制的粘合剂的喷墨打印盒
公开(公告)号：US20060001713A1
公开(公告)日：2006-01-05
申请号：US11169905
申请日：2005-06-29
申请人： Kin Kwan , James Mrvos , Jeanne Saldanha Singh , Mary Smoot
发明人： Kin Kwan , James Mrvos , Jeanne Saldanha Singh , Mary Smoot
IPC分类号： B41J2/175
CPC分类号： B41J2/17559
摘要： A method for manufacturing an inkjet print cartridge and an inkjet cartridge produced thereby are disclosed. An inkjet print cartridge in accordance with one aspect includes a component of the inkjet print cartridge and an applied adhesive on at least a portion of the component, wherein the applied adhesive is formed from an adhesive having a rheology viscosity ratio ηi/ηmin of from 1.0 to less than 2.1. The method in accordance with one aspect includes applying an adhesive onto at least a portion of a component of an inkjet print cartridge at an application temperature, Tα, and heating the adhesive from an initial temperature, Ti, to a cure temperature for the adhesive, Tc. The adhesive has a rheology cure profile characterized by at least one of the following parameters: a) a rheology viscosity ratio ηi/ηmin of from 1.0 to less than 2.1, b) a temperature of the adhesive is approximately equal to a minimum viscosity temperature for the adhesive, Tηmin, within less than about 10 minutes from the start of the cure cycle, and c) viscosity of the adhesive increases within less than about 5 minutes from the start of the cure cycle.
摘要翻译：公开了一种用于制造由此制造的喷墨打印墨盒和喷墨墨盒的方法。根据一个方面的喷墨打印墨盒包括喷墨打印墨盒的组件和在组件的至少一部分上的涂布的粘合剂，其中涂布的粘合剂由具有流变粘度比η的粘合剂形成， / SUB> / etamin为1.0至小于2.1。根据一个方面的方法包括在施加温度Tαα下将粘合剂施加到喷墨打印盒的部件的至少一部分上，并从初始温度T 1加热粘合剂，将粘合剂的固化温度提高到粘合剂的固化温度。粘合剂具有以下参数中的至少一个特征的流变学固化分布：a）1.0至小于2.1的流变粘度比ηa / etamin，b）粘合剂的温度为大约等于从固化循环开始不到约10分钟内粘合剂T etamin N的最小粘度温度，以及c）粘合剂的粘度在小于约5分钟内增加治愈周期的开始。

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