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1. 发明申请

US20070153104A1 PIXEL ARRAY, IMAGING SENSOR INCLUDING THE PIXEL ARRAY AND DIGITAL CAMERA INCLUDING THE IMAGING SENSOR 有权
标题翻译：像素阵列，成像传感器，包括像素阵列和数码相机，包括成像传感器
公开(公告)号：US20070153104A1
公开(公告)日：2007-07-05
申请号：US11275417
申请日：2005-12-30
申请人： John Ellis-Monaghan , Mark Jaffe , Alain Loiseau , Richard Rassel
发明人： John Ellis-Monaghan , Mark Jaffe , Alain Loiseau , Richard Rassel
IPC分类号： H04N9/04
CPC分类号： H04N9/045
摘要： A pixel array in an image sensor, the image sensor and a digital camera including the image sensor. The image sensor includes a pixel array with colored pixels and unfiltered (color filter-free) pixels. Each unfiltered pixel occupies one or more array locations. The colored pixels may be arranged in uninterrupted rows and columns with unfiltered pixels disposed between the uninterrupted rows and columns. The image sensor may in CMOS with the unfiltered pixels reducing low-light noise and improving low-light sensitivity.
摘要翻译：图像传感器中的像素阵列，图像传感器和包括图像传感器的数字照相机。图像传感器包括具有彩色像素和未滤波（无滤色器）像素的像素阵列。每个未过滤的像素占据一个或多个阵列位置。彩色像素可以布置在不间断的行和列中，其中未过滤的像素布置在不间断的行和列之间。图像传感器可以在CMOS中，未滤色像素降低低光噪声并改善低光灵敏度。

2. 发明申请

US20070296006A1 STRUCTURE FOR PIXEL SENSOR CELL THAT COLLECTS ELECTRONS AND HOLES 失效
标题翻译：用于收集电子和孔的像素传感器单元的结构
公开(公告)号：US20070296006A1
公开(公告)日：2007-12-27
申请号：US11850776
申请日：2007-09-06
申请人： James Adkisson , Andres Bryant , John Ellis-Monaghan , Mark Jaffe , Jeffrey Johnson , Alain Loiseau
发明人： James Adkisson , Andres Bryant , John Ellis-Monaghan , Mark Jaffe , Jeffrey Johnson , Alain Loiseau
IPC分类号： H01L31/00
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689 , H01L31/035281 , H01L31/1037
摘要： The present invention relates to a design structure for a pixel sensor cell. The pixel sensor cell approximately doubles the available signal for a given quanta of light. A design structure for a pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.
摘要翻译：本发明涉及一种像素传感器单元的设计结构。像素传感器单元对于给定的光量大约使可用信号加倍。具有降低的复杂度的像素传感器单元的设计结构包括形成在基板的表面下面的n型收集阱区域，用于收集电子辐射产生的电子撞击在像素传感器单元上，以及p型收集阱区域用于收集由撞击光子产生的孔的基板的表面。具有第一输入的电路结构耦合到n型收集阱区域，而第二输入端耦合到p型收集阱区域，其中像素传感器单元的输出信号是信号的差值的大小的第一输入和第二输入的信号。

3. 发明申请

US20060192233A1 BODY POTENTIAL IMAGER CELL 有权
标题翻译：身体潜像成像细胞
公开(公告)号：US20060192233A1
公开(公告)日：2006-08-31
申请号：US10906625
申请日：2005-02-28
申请人： John Ellis-Monaghan , Mark Jaffe , Alain Loiseau
发明人： John Ellis-Monaghan , Mark Jaffe , Alain Loiseau
IPC分类号： H01L27/148
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14609 , H01L27/14679
摘要： An imaging circuit, an imaging sensor, and a method of imaging. The imaging cell circuit including one or more imaging cell circuits, each imaging cell circuit comprising: a transistor having a floating body for holding charge generated in the floating body in response to exposure of the floating body to electromagnetic radiation; means for biasing the transistor wherein an output of the transistor is responsive to the electromagnetic radiation; and means for selectively connecting the floating body to a reset voltage supply.
摘要翻译：成像电路，成像传感器和成像方法。所述成像单元电路包括一个或多个成像单元电路，每个成像单元电路包括：晶体管，具有浮动体，用于响应于浮体暴露于电磁辐射而保持在浮体中产生的电荷; 用于偏置晶体管的装置，其中晶体管的输出响应于电磁辐射; 以及用于选择性地将浮动体连接到复位电压源的装置。

4. 发明申请

US20070029581A1 PIXEL SENSOR CELL FOR COLLECTING ELECTRONS AND HOLES 失效
标题翻译：用于收集电子和孔的像素传感器单元
公开(公告)号：US20070029581A1
公开(公告)日：2007-02-08
申请号：US11161535
申请日：2005-08-08
申请人： James Adkisson , Andres Bryant , John Ellis-Monaghan , Mark Jaffe , Jeffrey Johnson , Alain Loiseau
发明人： James Adkisson , Andres Bryant , John Ellis-Monaghan , Mark Jaffe , Jeffrey Johnson , Alain Loiseau
IPC分类号： H01L27/148
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689 , H01L31/035281
摘要： The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.
摘要翻译：本发明是像素传感器单元及其制造方法。像素传感器单元对于给定的光量大约使可用信号加倍。本发明的器件利用通过在像素传感器单元电路中照射光子而产生的空穴。具有降低的复杂度的像素传感器单元包括形成在基板的表面下面的n型收集阱区域，用于收集由电子辐射照射在像素传感器单元上产生的电子以及形成在基板表面下方的p型收集阱区域用于收集由撞击光子产生的孔。具有第一输入的电路结构耦合到n型收集阱区域，而第二输入端耦合到p型收集阱区域，其中像素传感器单元的输出信号是信号的差值的大小的第一输入和第二输入的信号。

5. 发明申请

US20070235780A1 BODY POTENTIAL IMAGER CELL 有权
标题翻译：身体潜像成像细胞
公开(公告)号：US20070235780A1
公开(公告)日：2007-10-11
申请号：US11765485
申请日：2007-06-20
申请人： John Ellis-Monaghan , Mark Jaffe , Alain Loiseau
发明人： John Ellis-Monaghan , Mark Jaffe , Alain Loiseau
IPC分类号： H01L31/0352
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14609 , H01L27/14679
摘要： An imaging circuit, an imaging sensor, and a method of imaging. The imaging cell circuit including one or more imaging cell circuits, each imaging cell circuit comprising: a transistor having a floating body for holding charge generated in the floating body in response to exposure of the floating body to electromagnetic radiation; means for biasing the transistor wherein an output of the transistor is responsive to the electromagnetic radiation; and means for selectively connecting the floating body to a reset voltage supply.
摘要翻译：成像电路，成像传感器和成像方法。所述成像单元电路包括一个或多个成像单元电路，每个成像单元电路包括：晶体管，具有浮动体，用于响应于浮体暴露于电磁辐射而保持在浮体中产生的电荷; 用于偏置晶体管的装置，其中晶体管的输出响应于电磁辐射; 以及用于选择性地将浮动体连接到复位电压源的装置。

6. 发明申请

US20070108485A1 IMAGE SENSOR CELLS 失效
标题翻译：图像传感器细胞
公开(公告)号：US20070108485A1
公开(公告)日：2007-05-17
申请号：US11619024
申请日：2007-01-02
申请人： James Adkisson , John Ellis-Monaghan , Jeffrey Gambino , Mark Jaffe , Richard Rassel
发明人： James Adkisson , John Ellis-Monaghan , Jeffrey Gambino , Mark Jaffe , Richard Rassel
IPC分类号： H01L31/113 , H01L21/00
CPC分类号： H01L27/14609 , H01L27/1463 , H01L27/14641 , H01L27/14643 , H01L31/035281
摘要： A structure (and method for forming the same) for an image sensor cell. The method includes providing a semiconductor substrate. Then, a charge collection well is formed in the semiconductor substrate, the charge collection well comprising dopants of a first doping polarity. Next, a surface pinning layer is formed in the charge collection well, the surface pinning layer comprising dopants of a second doping polarity opposite to the first doping polarity. Then, an electrically conductive push electrode is formed in direct physical contact with the surface pinning layer but not in direct physical contact with the charge collection well. Then, a transfer transistor is formed on the semiconductor substrate. The transfer transistor includes first and second source/drain regions and a channel region. The first and second source/drain regions comprise dopants of the first doping polarity. The first source/drain region is in direct physical contact with the charge collection well.
摘要翻译：用于图像传感器单元的结构（及其形成方法）。该方法包括提供半导体衬底。然后，在半导体衬底中形成电荷收集阱，电荷收集阱包含第一掺杂极性的掺杂剂。接下来，在电荷收集阱中形成表面钉扎层，表面钉扎层包括与第一掺杂极性相反的第二掺杂极性的掺杂剂。然后，导电的推动电极形成为与表面钉扎层直接物理接触，但不与电荷收集阱直接物理接触。然后，在半导体衬底上形成传输晶体管。传输晶体管包括第一和第二源极/漏极区域和沟道区域。第一和第二源/漏区包括第一掺杂极性的掺杂剂。第一源极/漏极区域与电荷收集阱直接物理接触。

7. 发明申请

US20060186505A1 IMAGE SENSOR CELLS 有权
标题翻译：图像传感器细胞
公开(公告)号：US20060186505A1
公开(公告)日：2006-08-24
申请号：US10906510
申请日：2005-02-23
申请人： James Adkisson , John Ellis-Monaghan , Jeffrey Gambino , Mark Jaffe , Richard Rassel
发明人： James Adkisson , John Ellis-Monaghan , Jeffrey Gambino , Mark Jaffe , Richard Rassel
IPC分类号： H01L31/06
CPC分类号： H01L27/14609 , H01L27/1463 , H01L27/14641 , H01L27/14643 , H01L31/035281
摘要： A structure (and method for forming the same) for an image sensor cell. The structure includes (a) a semiconductor substrate; (b) a charge collection well on the substrate, the charge collection well comprising a semiconductor material doped with a first doping polarity; (c) a surface pinning layer on and in direct physical contact with the charge collection well, the surface pinning layer comprising a semiconductor material doped with a second doping polarity opposite to the first doping polarity; and (d) an electrically conducting push electrode being in direct physical contact with the surface pinning layer but not being in direct physical contact with the charge collection well.
摘要翻译：用于图像传感器单元的结构（及其形成方法）。该结构包括（a）半导体衬底; （b）在所述衬底上的电荷收集阱，所述电荷收集阱包括掺杂有第一掺杂极性的半导体材料; （c）与电荷收集阱直接物理接触的表面钉扎层，所述表面钉扎层包括掺杂有与第一掺杂极性相反的第二掺杂极性的半导体材料; 和（d）与表面钉扎层直接物理接触但不与电荷收集阱直接物理接触的导电推动电极。

8. 发明申请

US20070145438A1 PIXEL SENSOR CELL HAVING REDUCED PINNING LAYER BARRIER POTENTIAL AND METHOD THEREOF 有权
标题翻译：具有减少的钉扎层障碍物的像素传感器电池及其方法
公开(公告)号：US20070145438A1
公开(公告)日：2007-06-28
申请号：US11681454
申请日：2007-03-02
申请人： James Adkisson , Andres Bryant , John Ellis-Monaghan , Jeffrey Gambino , Mark Jaffe , Jerome Lasky , Richard Phelps
发明人： James Adkisson , Andres Bryant , John Ellis-Monaghan , Jeffrey Gambino , Mark Jaffe , Jerome Lasky , Richard Phelps
IPC分类号： H01L31/113
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L31/0352
摘要： A pixel sensor cell structure and method of manufacture. The pixel cell comprises a doped layer formed adjacent to a first side of a transfer gate structure for coupling a collection well region and a channel region. Potential barrier interference to charge transfer caused by a pinning layer is reduced.
摘要翻译：像素传感器单元结构及其制造方法。像素单元包括与传输栅极结构的第一侧相邻形成的用于耦合收集阱区和沟道区的掺杂层。减少了由钉扎层引起的对电荷转移的电势障碍干扰。

9. 发明申请

US20070187734A1 A CMOS IMAGER PHOTODIODE WITH ENHANCED CAPACITANCE 失效
标题翻译：具有增强电容的CMOS成像器光电二极管
公开(公告)号：US20070187734A1
公开(公告)日：2007-08-16
申请号：US11276085
申请日：2006-02-14
申请人： James Adkisson , John Ellis-Monaghan , Mark Jaffe , Dale Pearson , Dennis Rogers
发明人： James Adkisson , John Ellis-Monaghan , Mark Jaffe , Dale Pearson , Dennis Rogers
IPC分类号： H01L31/062
CPC分类号： H01L27/14643 , H01L27/1463 , H01L27/14689 , H01L31/035281
摘要： A pixel sensor cell having a semiconductor substrate having a surface; a photosensitive element formed in a substrate having a non-laterally disposed charge collection region entirely isolated from a physical boundary including the substrate surface. The photosensitive element comprises a trench having sidewalls formed in the substrate of a first conductivity type material; a first doped layer of a second conductivity type material formed adjacent to at least one of the sidewalls; and a second doped layer of the first conductivity type material formed between the first doped layer and the at least one trench sidewall and formed at a surface of the substrate, the second doped layer isolating the first doped layer from the at least one trench sidewall and the substrate surface. In a further embodiment, an additional photosensitive element is provided that includes a laterally disposed charge collection region that contacts the non-laterally disposed charge collection region of the photosensitive element and underlies the doped layer formed at the substrate surface.
摘要翻译：一种像素传感器单元，具有具有表面的半导体衬底; 形成在具有与包括基板表面的物理边界完全隔离的非横向布置的电荷收集区域的基板中的感光元件。感光元件包括具有形成在第一导电类型材料的衬底中的侧壁的沟槽; 与所述侧壁中的至少一个相邻形成的第二导电类型材料的第一掺杂层; 以及形成在所述第一掺杂层和所述至少一个沟槽侧壁之间且形成在所述衬底的表面处的所述第一导电类型材料的第二掺杂层，所述第二掺杂层将所述第一掺杂层与所述至少一个沟槽侧壁隔离，基材表面。在另一个实施例中，提供附加的光敏元件，其包括横向设置的电荷收集区域，其接触感光元件的非横向设置的电荷收集区域，并且位于形成在基底表面处的掺杂层的下方。

10. 发明申请

US20060226456A1 PIXEL SENSOR CELL HAVING REDUCED PINNING LAYER BARRIER POTENTIAL AND METHOD THEREOF 有权
标题翻译：具有减少的钉扎层障碍物的像素传感器电池及其方法
公开(公告)号：US20060226456A1
公开(公告)日：2006-10-12
申请号：US10907570
申请日：2005-04-06
申请人： James Adkisson , Andres Bryant , John Ellis-Monaghan , Jeffrey Gambino , Mark Jaffe , Jerome Lasky , Richard Phelps
发明人： James Adkisson , Andres Bryant , John Ellis-Monaghan , Jeffrey Gambino , Mark Jaffe , Jerome Lasky , Richard Phelps
IPC分类号： H01L31/113
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L31/0352
摘要： A pixel sensor cell structure and method of manufacture. The pixel cell comprises a doped layer formed adjacent to a first side of a transfer gate structure for coupling a collection well region and a channel region. Potential barrier interference to charge transfer caused by a pinning layer is reduced.
摘要翻译：像素传感器单元结构及其制造方法。像素单元包括与传输栅极结构的第一侧相邻形成的用于耦合收集阱区和沟道区的掺杂层。减少了由钉扎层引起的对电荷转移的电势障碍干扰。

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