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    • 4. 发明授权
    • High chloride emulsion doped with combination of metal complexes
    • 掺有金属络合物的高氯化物乳液
    • US06531274B1
    • 2003-03-11
    • US09919514
    • 2001-07-31
    • Jerzy Z. MydlarzWoodrow G. McDugleRaymond S. Eachus
    • Jerzy Z. MydlarzWoodrow G. McDugleRaymond S. Eachus
    • G03C1005
    • G03C1/09
    • A radiation-sensitive emulsion comprised of silver halide grains (a) containing greater than 50 mole percent chloride, based on silver, (b) having greater than 50 percent of their surface area provided by {100} crystal faces, and (c) having a central portion accounting for up to 99 percent of total silver and containing a first dopant of Formula (I) and a second dopant of Formula (II): [RuL6]n  (I) wherein n is zero, −1, −2, −3 or −4, and L6 represents bridging ligands which can be independently selected, provided that at least four of the ligands are anionic ligands, and at least one of the ligands is a cyano ligand or a ligand more electronegative than a cyano ligand; [TE4(NZ)E′]r  (II) wherein T is Os or Ru; E4 represents bridging ligands which can be independently selected; E′ is E or NZ; r is zero, −1, −2 or −3; and Z is oxygen or sulfur; wherein the dopant of Formula (II) is selected from hexacoordination complexes which form deep electron traps in silver chloride grains by providing an incorporated molecular entity having a lowest unoccupied molecular orbital which is at least 0.5 eV below the conduction band of the silver chloride grains, where (i) less than 60% of the deep electron traps empty within 2000 seconds at 300 K after being filled and (ii) between 15-60% of the deep electron traps empty within 12,000 seconds at 300 K after being filled. Improved latent image keeping performance can be obtained for optical and digital exposed elements which comprise silver halide grains in an emulsion layer doped with a dopant of Formula (I) and a dopant of Formula (II) as described above, while substantially maintaining other desired photographic parameters.
    • 由卤化银颗粒(a)组成的辐射敏感性乳液(a),其含有大于50摩尔%的氯化物,基于银,(b)具有由{100}晶面提供的其表面积的50%以上,和(c) 占中银总量的99%,并含有式(I)的第一掺杂剂和式(II)的第二掺杂剂:其中n为0,-1,-2,-3或-4,和 L6表示可以独立选择的桥连配体,条件是至少四种配体是阴离子配体,并且至少一种配体是氰基配体或比氰基配体更具有负电性的配体;其中T是Os或Ru; E4表示可独立选择的桥连配体; E'是E或NZ; r为零,-1,-2或-3; Z是氧或硫; 其中式(II)的掺杂剂选自六配位络合物,其通过提供低于氯化银颗粒的导带至少0.5eV的最低未占分子轨道的掺入分子实体在氯化银颗粒中形成深电子陷阱, 其中(i)在填充之后300K内,在2000秒内小于60%的深电子陷阱空闲,以及(ii)在填充之后的300K下,15-60%的深电子陷阱在12,000秒内空出。 对于在掺杂有式(I)的掺杂剂和如上所述的式(II)的掺杂剂的乳剂层中包含卤化银颗粒的光学和数字暴露元件,可以获得改进的潜像保持性能,同时基本上保持其它所需的照相 参数。