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    • 4. 发明授权
    • Semiconductor device having elevated gate electrode and elevated active
regions and method of manufacture thereof
    • 具有升高的栅电极和升高的有源区的半导体器件及其制造方法
    • US6110786A
    • 2000-08-29
    • US61409
    • 1998-04-16
    • Mark I. GardnerJon CheekJohn Bush
    • Mark I. GardnerJon CheekJohn Bush
    • H01L21/265H01L21/336H01L29/08H01L29/423
    • H01L29/0847H01L21/26586H01L29/66636H01L29/78
    • A semiconductor device having an elevated gate electrode and elevated active regions and a process for manufacturing such a device is disclosed. In accordance with one embodiment a semiconductor device is formed by forming a gate insulating layer over a substrate and forming a photoresist block over the gate insulating layer. First portions of the gate insulating layer and first portions of the substrate adjacent the photoresist block are then removed to form a first elevated substrate region under the gate insulating layer and photoresist block. Edge portions of the photoresist block are then removed. Second portions of the gate insulating layer and portions of the first elevated substrate region adjacent the photoresist block are then removed to form second elevated substrate regions adjacent the photoresist block, and a dopant is implanted into the second elevated substrate regions to form source/drain regions, and the photoresist block is used to form a gate electrode. In accordance with another embodiment a semiconductor device is formed substantially as above, but the dopant is implanted at an angle relative to the substrate surface.
    • 公开了一种具有升高的栅电极和升高的有源区的半导体器件及其制造方法。 根据一个实施例,通过在衬底上形成栅极绝缘层并在栅极绝缘层上形成光致抗蚀剂阻挡层来形成半导体器件。 然后去除栅极绝缘层的第一部分和与光致抗蚀剂嵌段相邻的基板的第一部分,以在栅极绝缘层和光致抗蚀剂阻挡块下方形成第一升高的基板区域。 然后去除光致抗蚀剂块的边缘部分。 然后去除栅极绝缘层的第二部分和邻近光致抗蚀剂阻挡块的第一升高的衬底区域的部分,以形成与光致抗蚀剂阻挡层相邻的第二升高的衬底区域,并且将掺杂剂注入第二升高的衬底区域以形成源极/漏极区域 ,并且光致抗蚀剂块用于形成栅电极。 根据另一个实施例,基本上如上所述形成半导体器件,但掺杂剂以相对于衬底表面成一角度注入。