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1. 发明授权

US07704684B2 Methods and devices for fabricating three-dimensional nanoscale structures 有权
标题翻译：制造三维纳米尺度结构的方法和装置
公开(公告)号：US07704684B2
公开(公告)日：2010-04-27
申请号：US11001689
申请日：2004-12-01
申请人： John A. Rogers , Seokwoo Jeon , Jangung Park
发明人： John A. Rogers , Seokwoo Jeon , Jangung Park
IPC分类号： G03F7/00
CPC分类号： B81C99/00 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G03F1/50 , G03F7/70283 , G03F7/703 , G03F7/7035 , G03F7/70408 , Y10S430/146
摘要： The present invention provides methods and devices for fabricating 3D structures and patterns of 3D structures on substrate surfaces, including symmetrical and asymmetrical patterns of 3D structures. Methods of the present invention provide a means of fabricating 3D structures having accurately selected physical dimensions, including lateral and vertical dimensions ranging from 10s of nanometers to 1000s of nanometers. In one aspect, methods are provided using a mask element comprising a conformable, elastomeric phase mask capable of establishing conformal contact with a radiation sensitive material undergoing photoprocessing. In another aspect, the temporal and/or spatial coherence of electromagnetic radiation using for photoprocessing is selected to fabricate complex structures having nanoscale features that do not extend entirely through the thickness of the structure fabricated.
摘要翻译：本发明提供了用于在衬底表面上制造3D结构的3D结构和图案的方法和装置，包括3D结构的对称和非对称图案。本发明的方法提供了一种制造具有精确选择的物理尺寸的3D结构的方法，包括从10纳米到1000纳米的横向和垂直尺寸。在一个方面，使用掩模元件提供方法，所述掩模元件包括能够与正在进行光刻处理的辐射敏感材料形成保形接触的适形的弹性体相位掩模。在另一方面，选择用于光处理的电磁辐射的时间和/或空间相干性来制造具有纳米尺度特征的复杂结构，其不完全延伸通过制造的结构的厚度。

2. 发明申请

US20060286488A1 Methods and devices for fabricating three-dimensional nanoscale structures 有权
标题翻译：制造三维纳米尺度结构的方法和装置
公开(公告)号：US20060286488A1
公开(公告)日：2006-12-21
申请号：US11001689
申请日：2004-12-01
申请人： John Rogers , Seokwoo Jeon , Jangung Park
发明人： John Rogers , Seokwoo Jeon , Jangung Park
IPC分类号： G03F7/20
CPC分类号： B81C99/00 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G03F1/50 , G03F7/70283 , G03F7/703 , G03F7/7035 , G03F7/70408 , Y10S430/146
摘要： The present invention provides methods and devices for fabricating 3D structures and patterns of 3D structures on substrate surfaces, including symmetrical and asymmetrical patterns of 3D structures. Methods of the present invention provide a means of fabricating 3D structures having accurately selected physical dimensions, including lateral and vertical dimensions ranging from 10 s of nanometers to 1000 s of nanometers. In one aspect, methods are provided using a mask element comprising a conformable, elastomeric phase mask capable of establishing conformal contact with a radiation sensitive material undergoing photoprocessing. In another aspect, the temporal and/or spatial coherence of electromagnetic radiation using for photoprocessing is selected to fabricate complex structures having nanoscale features that do not extend entirely through the thickness of the structure fabricated.
摘要翻译：本发明提供了用于在衬底表面上制造3D结构的3D结构和图案的方法和装置，包括3D结构的对称和非对称图案。本发明的方法提供了一种制造具有精确选择的物理尺寸的3D结构的方法，包括横向和垂直尺寸范围为10纳米至1000秒的纳米。在一个方面，使用掩模元件提供方法，所述掩模元件包括能够与正在进行光刻处理的辐射敏感材料形成保形接触的适形的弹性体相位掩模。在另一方面，选择用于光处理的电磁辐射的时间和/或空间相干性来制造具有纳米尺度特征的复杂结构，其不完全延伸通过制造的结构的厚度。

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