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    • 5. 发明授权
    • Apparatus and method for monitoring trench profiles and for spectrometrologic analysis
    • 监测沟槽剖面和光谱分析的装置和方法
    • US07372579B2
    • 2008-05-13
    • US11407339
    • 2006-04-20
    • Zhen-Long ChenPeter WeidnerPierre-Yves GuittetAlexander KasicBarbara SchmidtAnita Klee
    • Zhen-Long ChenPeter WeidnerPierre-Yves GuittetAlexander KasicBarbara SchmidtAnita Klee
    • G01B9/02
    • G01B11/0625
    • An apparatus for monitoring a trench profile of a substrate includes a radiation-emitting unit for irradiating the substrate with infrared radiation. The intensity and/or polarization state of the infrared radiation reflected from the substrate is measured at a multitude of measuring frequencies. An analyzing unit determines the respective reflectance and relative phase change and/or relative amplitude change in relation to the respective measuring frequency. In addition, a reflectance spectrum, a relative phase change spectrum and/or a relative amplitude change spectrum may be obtained. By performing a Fourier transformation of the respective spectrum, a secondary Fourier spectrum is obtained. The secondary Fourier spectrum plots a virtual amplitude against corresponding values of a frequency periodicity that correspond to a substrate depth. Peaks of the virtual amplitude may indicate reflective planes within the substrate at respective depths. Thus, rough sections in the trench profile may be identified without modeling.
    • 用于监测衬底的沟槽轮廓的装置包括用于用红外辐射照射衬底的辐射发射单元。 在多个测量频率下测量从衬底反射的红外辐射的强度和/或极化状态。 分析单元确定相应于相应测量频率的相应反射率和相对相位变化和/或相对幅度变化。 此外,可以获得反射光谱,相对相变光谱和/或相对振幅变化光谱。 通过对相应的光谱进行傅立叶变换,获得次傅里叶光谱。 次傅立叶光谱绘制对应于对应于衬底深度的频率周期的相应值的虚拟振幅。 虚拟振幅的峰值可以指示在相应深度处的衬底内的反射平面。 因此,可以在没有建模的情况下识别沟槽轮廓中的粗糙部分。
    • 6. 发明申请
    • Apparatus and method for monitoring trench profiles and for spectrometrologic analysis
    • 监测沟槽剖面和光谱分析的装置和方法
    • US20070247634A1
    • 2007-10-25
    • US11407339
    • 2006-04-20
    • Zhen-Long ChenPeter WeidnerPierre-Yves GuittetAlexander KasicBarbara SchmidtAnita Klee
    • Zhen-Long ChenPeter WeidnerPierre-Yves GuittetAlexander KasicBarbara SchmidtAnita Klee
    • G01B9/02
    • G01B11/0625
    • An apparatus for monitoring a trench profile of a substrate includes a radiation-emitting unit for irradiating the substrate with infrared radiation. The intensity and/or polarization state of the infrared radiation reflected from the substrate is measured at a multitude of measuring frequencies. An analyzing unit determines the respective reflectance and relative phase change and/or relative amplitude change in relation to the respective measuring frequency. In addition, a reflectance spectrum, a relative phase change spectrum and/or a relative amplitude change spectrum may be obtained. By performing a Fourier transformation of the respective spectrum, a secondary Fourier spectrum is obtained. The secondary Fourier spectrum plots a virtual amplitude against corresponding values of a frequency periodicity that correspond to a substrate depth. Peaks of the virtual amplitude may indicate reflective planes within the substrate at respective depths. Thus, rough sections in the trench profile may be identified without modeling.
    • 用于监测衬底的沟槽轮廓的装置包括用于用红外辐射照射衬底的辐射发射单元。 在多个测量频率下测量从衬底反射的红外辐射的强度和/或极化状态。 分析单元确定相应于相应测量频率的相应反射率和相对相位变化和/或相对幅度变化。 此外,可以获得反射光谱,相对相变光谱和/或相对振幅变化光谱。 通过对相应的光谱进行傅立叶变换,获得次傅里叶光谱。 次傅立叶光谱绘制对应于对应于衬底深度的频率周期的相应值的虚拟振幅。 虚拟振幅的峰值可以指示在相应深度处的衬底内的反射平面。 因此,可以在没有建模的情况下识别沟槽轮廓中的粗糙部分。