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    • 1. 发明申请
    • OPENING DEVICE
    • 开启装置
    • US20090188029A1
    • 2009-07-30
    • US12362867
    • 2009-01-30
    • Jingning TAZhiqiang WUOliver Chillwa HOQiang CHEN
    • Jingning TAZhiqiang WUOliver Chillwa HOQiang CHEN
    • A47K13/10
    • A47K13/10
    • An opening device has a drive motor with a motor shaft, an output axle for pivotably driving a member between a first position and a second position and a gear train connecting the motor shaft to the output axle. A gear case houses the gear train. The gear train has an output gear arranged to drive the output axle and the output axle is slidably received in a hole in the output gear. Thus the output axle can be assembled to the output gear or be disassembled from the output gear without disassembling the gear case. The gear case has at least one moveable baffle plate arranged to prevent the output axle from accidentally separating from the output gear once assembled.
    • 打开装置具有带马达轴的驱动马达,用于在第一位置和第二位置之间可枢转地驱动构件的输出轴和将马达轴连接到输出轴的齿轮系。 齿轮箱装有齿轮系。 齿轮系具有输出齿轮,其布置成驱动输出轴,并且输出轴可滑动地容纳在输出齿轮的孔中。 因此,输出轴可以组装到输出齿轮上,或者从输出齿轮拆卸而不拆卸齿轮箱。 齿轮箱具有至少一个可移动挡板,其布置成防止输出轴在组装后意外地与输出齿轮分离。
    • 6. 发明申请
    • SOI SEMICONDUCTOR COMPONENTS AND METHODS FOR THEIR FABRICATION
    • SOI半导体元件及其制造方法
    • US20090184372A1
    • 2009-07-23
    • US12413185
    • 2009-03-27
    • Ali ICELQiang CHENMario M. PELELLA
    • Ali ICELQiang CHENMario M. PELELLA
    • H01L29/78
    • H01L27/1203H01L21/823437H01L21/823481H01L21/84
    • SOI semiconductor components and methods for their fabrication are provided wherein the SOI semiconductor components include an MOS transistor in the supporting semiconductor substrate. In accordance with one embodiment the component comprises a semiconductor on insulator (SOI) substrate having a first semiconductor layer, a layer of insulator on the first semiconductor layer, and a second semiconductor layer overlying the layer of insulator. The component includes source and drain regions of a first conductivity type and first doping concentration in the first semiconductor layer. A channel region of a second conductivity type is defined between the source and drain regions. A gate insulator and gate electrode overlie the channel region. A drift region of the first conductivity type is located between the channel region and the drain region, the drift region having a second doping concentration less than the first doping concentration of the first conductivity determining dopant.
    • 提供SOI半导体元件及其制造方法,其中SOI半导体元件包括支撑半导体衬底中的MOS晶体管。 根据一个实施例,该部件包括具有第一半导体层,第一半导体层上的绝缘体层和覆盖绝缘体层的第二半导体层的绝缘体上半导体衬底(SOI)衬底。 该部件包括第一导电类型的源区和漏区以及第一半导体层中的第一掺杂浓度。 在源区和漏区之间限定第二导电类型的沟道区。 栅极绝缘体和栅极电极覆盖沟道区域。 第一导电类型的漂移区域位于沟道区域和漏极区域之间,漂移区域具有小于第一导电性确定掺杂剂的第一掺杂浓度的第二掺杂浓度。