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1. 发明申请

US20080128785A1 FLASH MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：闪存存储器件及其制造方法
公开(公告)号：US20080128785A1
公开(公告)日：2008-06-05
申请号：US11932273
申请日：2007-10-31
申请人： Jin-Ha Park , Jae-Hee Kim
发明人： Jin-Ha Park , Jae-Hee Kim
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L27/105 , H01L27/11526 , H01L27/11543 , H01L29/42324 , H01L29/6653 , H01L29/6656 , H01L29/7881
摘要： A flash memory device having a spacer of a gate region formed in an oxide-nitride-oxide (ONO) structure and a source/drain region formed using the ONO structure. The outermost oxide in the ONO structure is removed and an interlayer insulating film is formed to ensure sufficient space between the gate regions. Thus, it is possible to prevent a void from being generated in the interlayer insulating film and prevent a word line from being electrically connected to a drain contact for forming a bit line.
摘要翻译：具有形成在氧化物 - 氧化物 - 氧化物（ONO）结构中的栅极区域的间隔物和使用ONO结构形成的源极/漏极区域的闪速存储器件。去除ONO结构中的最外面的氧化物，并形成层间绝缘膜以确保栅极区域之间的足够空间。因此，可以防止在层间绝缘膜中产生空隙，并且防止字线与用于形成位线的漏极接触电连接。

2. 发明授权

US07858473B2 Flash memory device and method of manufacturing the same 失效
标题翻译：闪存装置及其制造方法
公开(公告)号：US07858473B2
公开(公告)日：2010-12-28
申请号：US11932273
申请日：2007-10-31
申请人： Jin-Ha Park , Jae-Hee Kim
发明人： Jin-Ha Park , Jae-Hee Kim
IPC分类号： H01L21/336 , H01L29/788
CPC分类号： H01L27/105 , H01L27/11526 , H01L27/11543 , H01L29/42324 , H01L29/6653 , H01L29/6656 , H01L29/7881
摘要： A flash memory device having a spacer of a gate region formed in an oxide-nitride-oxide (ONO) structure and a source/drain region formed using the ONO structure. The outermost oxide in the ONO structure is removed and an interlayer insulating film is formed to ensure sufficient space between the gate regions. Thus, it is possible to prevent a void from being generated in the interlayer insulating film and prevent a word line from being electrically connected to a drain contact for forming a bit line.
摘要翻译：具有形成在氧化物 - 氧化物 - 氧化物（ONO）结构中的栅极区域的间隔物和使用ONO结构形成的源极/漏极区域的闪速存储器件。去除ONO结构中的最外面的氧化物，并形成层间绝缘膜以确保栅极区域之间的足够空间。因此，可以防止在层间绝缘膜中产生空隙，并且防止字线与用于形成位线的漏极接触电连接。

3. 发明申请

US20090321797A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20090321797A1
公开(公告)日：2009-12-31
申请号：US12555311
申请日：2009-09-08
申请人： Jin-Ha Park
发明人： Jin-Ha Park
IPC分类号： H01L29/78
CPC分类号： H01L29/6659 , H01L29/4933 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/7833 , H01L29/7843
摘要： A method of manufacturing a semiconductor device including at least one step of: forming a transistor on and/or over a semiconductor substrate; forming silicide on and/or over a gate electrode and a source/drain region of the transistor; removing an uppermost oxide film from a spacer of the transistor; and forming a contact stop layer on and/or over the entire surface of the substrate including the gate electrode.
摘要翻译：一种制造半导体器件的方法，包括至少一个步骤：在半导体衬底上和/或之上形成晶体管; 在晶体管的栅极电极和源极/漏极区域上和/或之上形成硅化物; 从晶体管的间隔物去除最上面的氧化膜; 以及在包括所述栅电极的所述基板的整个表面上和/或整个表面上形成接触停止层。

4. 发明授权

US07605044B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07605044B2
公开(公告)日：2009-10-20
申请号：US11852023
申请日：2007-09-07
申请人： Jin-Ha Park
发明人： Jin-Ha Park
IPC分类号： H01L21/336
CPC分类号： H01L29/6659 , H01L29/4933 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/7833 , H01L29/7843
摘要： A method of manufacturing a semiconductor device including at least one step of: forming a transistor on and/or over a semiconductor substrate; forming silicide on and/or overa gate electrode and a source/drain region of the transistor; removing an uppermost oxide film from a spacer of the transistor; and forming a contact stop layer on and/or over the entire surface of the substrate including the gate electrode.
摘要翻译：一种制造半导体器件的方法，包括至少一个步骤：在半导体衬底上和/或之上形成晶体管; 在晶体管的栅极电极和源极/漏极区域上和/或栅极上形成硅化物; 从晶体管的间隔物去除最上面的氧化膜; 以及在包括所述栅电极的所述基板的整个表面上和/或整个表面上形成接触停止层。

5. 发明申请

US20090146204A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090146204A1
公开(公告)日：2009-06-11
申请号：US12330659
申请日：2008-12-09
申请人： Jin-Ha Park
发明人： Jin-Ha Park
IPC分类号： H01L29/78 , H01L21/3205
CPC分类号： H01L21/32139 , H01L27/115 , H01L27/11521 , H01L29/4234
摘要： A semiconductor device includes a first poly layer over a semiconductor substrate, an IPD layer over the first poly layer, a second poly layer over the IPD layer, an oxide layer over a sidewall of the second poly layer, a first insulating layer over a sidewall of the oxide layer, and a second insulating layer over a sidewall of the first insulating layer.
摘要翻译：半导体器件包括半导体衬底上的第一多晶硅层，第一多晶硅层上的IPD层，IPD层上的第二多晶硅层，第二多晶硅层的侧壁上的氧化物层，在侧壁上的第一绝缘层的氧化物层，以及位于第一绝缘层的侧壁上的第二绝缘层。

6. 发明申请

US20080211008A1 MANUFACTURING METHOD OF FLASH MEMORY DEVICE 失效
标题翻译：闪存存储器件的制造方法
公开(公告)号：US20080211008A1
公开(公告)日：2008-09-04
申请号：US11943114
申请日：2007-11-20
申请人： Jin-Ha Park
发明人： Jin-Ha Park
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L27/11526 , H01L21/28273 , H01L27/105 , H01L27/11536 , H01L29/66825 , Y10S257/90
摘要： Embodiments relate to a manufacturing method of a flash memory device which improves electrical characteristics by reducing or preventing void generation. A manufacturing method of a flash memory device according to embodiments includes forming a plurality of gate patterns over a semiconductor substrate including a tunnel oxide layer, a floating gate, a dielectric layer, and a control gate. A spacer layer may be formed as a compound insulating layer structure over the side wall of the gate pattern. A source/drain area may be formed over the semiconductor substrate at both sides of the control gate. An insulating layer located at the outermost of the spacer layer may be removed. A contact hole may be formed between the gate patterns by forming and patterning the interlayer insulating layer. A contact plug may be formed in the contact hole.
摘要翻译：实施例涉及通过减少或防止产生空穴来改善电气特性的闪速存储装置的制造方法。根据实施例的闪速存储器件的制造方法包括在包括隧道氧化物层，浮动栅极，电介质层和控制栅极的半导体衬底上形成多个栅极图案。可以在栅极图案的侧壁上形成间隔层作为复合绝缘层结构。源极/漏极区域可以形成在控制栅极两侧的半导体衬底之上。可以去除位于间隔层最外层的绝缘层。通过形成和图案化层间绝缘层，可以在栅极图案之间形成接触孔。可以在接触孔中形成接触塞。

7. 发明申请

US20080073715A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20080073715A1
公开(公告)日：2008-03-27
申请号：US11852023
申请日：2007-09-07
申请人： Jin-Ha Park
发明人： Jin-Ha Park
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/6659 , H01L29/4933 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/7833 , H01L29/7843
摘要： A method of manufacturing a semiconductor device including at least one step of: forming a transistor on and/or over a semiconductor substrate; forming silicide on and/or over a gate electrode and a source/drain region of the transistor; removing an uppermost oxide film from a spacer of the transistor; and forming a contact stop layer on and/or over the entire surface of the substrate including the gate electrode.
摘要翻译：一种制造半导体器件的方法，包括至少一个步骤：在半导体衬底上和/或之上形成晶体管; 在晶体管的栅极电极和源极/漏极区域上和/或之上形成硅化物; 从晶体管的间隔物去除最上面的氧化膜; 以及在包括所述栅电极的所述基板的整个表面上和/或整个表面上形成接触停止层。

8. 发明申请

US20080061373A1 SYSTEM-IN-PACKAGE TYPE STATIC RANDOM ACCESS MEMORY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：系统级封装类型静态随机访问存储器件及其制造方法
公开(公告)号：US20080061373A1
公开(公告)日：2008-03-13
申请号：US11852046
申请日：2007-09-07
申请人： Jin-Ha Park
发明人： Jin-Ha Park
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L27/1104 , H01L2924/0002 , H01L2924/00
摘要： A device may include at least one of the following: A first substrate including a plurality of N-channel metal oxide semiconductor transistors, with the N-channel MOS transistors including an access transistor and a drive transistor. A second substrate including a plurality of P-channel metal oxide semiconductor transistors used as pull-up devices. A first connecting device formed on at least one of the first substrate and the second substrate to connect the plurality of N-channel metal oxide semiconductor transistors to the plurality of P-channel metal oxide semiconductor transistors, wherein the four N-channel metal oxide semiconductor transistors formed on the first substrate and the two P-channel metal oxide semiconductor transistors formed on the second substrate form the unit memory cell.
摘要翻译：器件可以包括以下中的至少一个：包括多个N沟道金属氧化物半导体晶体管的第一衬底，其中N沟道MOS晶体管包括存取晶体管和驱动晶体管。包括用作上拉器件的多个P沟道金属氧化物半导体晶体管的第二衬底。第一连接装置，形成在第一基板和第二基板中的至少一个上，用于将多个N沟道金属氧化物半导体晶体管连接到多个P沟道金属氧化物半导体晶体管，其中四个N沟道金属氧化物半导体形成在第一基板上的晶体管和形成在第二基板上的两个P沟道金属氧化物半导体晶体管形成单元存储单元。

9. 发明授权

US06880733B2 Aerosol valve assembly and aerosol vessel 失效
标题翻译：气溶胶阀组件和气溶胶容器
公开(公告)号：US06880733B2
公开(公告)日：2005-04-19
申请号：US10220625
申请日：2002-04-04
申请人： Jin-Ha Park
发明人： Jin-Ha Park
IPC分类号： B65D83/44 , B05B9/04 , B65D83/14 , F16K3/26 , F17C7/00 , F17C13/04 , F17C13/12 , B65D83/00
CPC分类号： B65D83/48 , F16K3/265 , F17C7/00 , F17C13/04 , F17C13/123 , F17C2201/058 , F17C2205/0323 , F17C2205/0382 , F17C2260/021 , F17C2260/042 , F17C2270/0718
摘要： An aerosol vessel, which can be prevented from deforming and exploding by discharging gas when an excessive pressure occurs in a main body, is provided. The aerosol vessel includes a valve assembly basically including a nozzle body fixed to the main body; a valve stem installed at the nozzle body such that it can move up and down and has a gas inlet and a gas ejection passage; an opening/closing ring installed between the nozzle body and the valve stem such that it contacts and is removably supported by a support sill of the nozzle body in order to open or close the gas inlet; and an elastic unit for restoring the valve stem after operation and elastically supporting the opening/closing ring with respect to the support sill. When an excessive pressure occurs in the main body, the opening/closing ring moves upward and overcompressed gas is discharged through the gas inlet or a gap between the valve stem and a support member. The elastic unit may be composed of a contact spring for applying pressure the opening/closing ring and a support spring for elastically support the valve stem. An extra gas outlet may be formed in the valve stem in order to discharge the overcompressed gas.
摘要翻译：提供了一种气雾容器，其可以防止在主体中发生过大压力时通过排出气体而变形和爆炸。气溶胶容器包括基本上包括固定在主体上的喷嘴体的阀组件; 阀杆，其安装在喷嘴体上，使得其能够上下移动并具有气体入口和气体喷射通道; 一个安装在喷嘴主体和阀杆之间的打开/关闭环，使得它接触并由喷嘴体的支撑槽可移除地支撑，以打开或关闭气体入口; 以及弹性单元，用于在操作之后恢复阀杆并且相对于支撑梁弹性地支撑开/关环。当主体发生过大压力时，开/关环向上移动，过压缩气体通过气体入口或阀杆与支撑构件之间的间隙排出。弹性单元可以由用于向开/关环施加压力的接触弹簧和用于弹性地支撑阀杆的支撑弹簧构成。可以在阀杆中形成额外的气体出口，以便排出过压缩的气体。

10. 发明授权

US07629254B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07629254B2
公开(公告)日：2009-12-08
申请号：US11849687
申请日：2007-09-04
申请人： Jin-Ha Park
发明人： Jin-Ha Park
IPC分类号： H01L21/44 , H01L23/48
CPC分类号： H01L29/6656 , H01L29/66507 , H01L29/6653 , H01L29/6659 , H01L29/7833
摘要： Embodiments relater to a semiconductor device and a method of fabricating the same. A source/drain area may be formed by using the spacer having the dual structure of the oxide layer and nitride layer. After etching a part of the oxide layer, the salicide layer may be formed on the gate electrode and the source/drain area, and the spacer may be removed. The contact area may be ensured, so a higher degree of integration may be achieved.
摘要翻译：与半导体器件相关的实施例及其制造方法。可以通过使用具有氧化物层和氮化物层的双重结构的间隔物来形成源极/漏极区域。在蚀刻氧化物层的一部分之后，可以在栅极电极和源极/漏极区域上形成自对准硅化物层，并且可以去除间隔物。可以确保接触面积，因此可以实现更高程度的整合。

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