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1. 发明授权

US07393710B2 Fabrication method of multi-wavelength semiconductor laser device 有权
标题翻译：多波长半导体激光器件的制作方法
公开(公告)号：US07393710B2
公开(公告)日：2008-07-01
申请号：US11247935
申请日：2005-10-11
申请人： Jin Chul Kim , Su Yeol Lee , Chang Zoo Kim , Sang Heon Han , Keun Man Song , Tae Jun Kim , Seok Beom Choi
发明人： Jin Chul Kim , Su Yeol Lee , Chang Zoo Kim , Sang Heon Han , Keun Man Song , Tae Jun Kim , Seok Beom Choi
IPC分类号： H01L21/00
CPC分类号： H01S5/4031 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02488 , H01L21/02505 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01S5/2231 , H01S5/4087 , H01S2304/04
摘要： The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second areas is provided. Then, a first dielectric mask on the substrate is formed to expose only the first area. Then, epitaxial layers for a first semiconductor laser are grown on the first area of the substrate. Then, a second dielectric mask on the substrate is formed to expose only the second area. Then, epitaxial layers for a second semiconductor laser are grown on the second area of the substrate.
摘要翻译：本发明涉及一种双波长半导体激光器件，更具体地涉及一种多波长半导体激光器件的制造方法。在该方法中，提供了具有分隔成至少第一和第二区域的上表面的基板。然后，形成基板上的第一电介质掩模，仅露出第一区域。然后，在衬底的第一区域上生长用于第一半导体激光器的外延层。然后，形成基板上的第二电介质掩模，仅露出第二区域。然后，在衬底的第二区域上生长用于第二半导体激光器的外延层。

2. 发明授权

US07791100B2 Vertical gallium nitride based light emitting diode with multiple electrode branches 失效
标题翻译：具有多个电极分支的垂直氮化镓基发光二极管
公开(公告)号：US07791100B2
公开(公告)日：2010-09-07
申请号：US11602285
申请日：2006-11-21
申请人： Su Yeol Lee , Dong Woo Kim , Seok Beom Choi , Tae Jun Kim
发明人： Su Yeol Lee , Dong Woo Kim , Seok Beom Choi , Tae Jun Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/38
摘要： A vertical GaN-based LED includes an n-type bonding pad; an n-electrode formed under the n-type bonding pad; a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode; a p-electrode formed under the light-emitting structure; and a support layer formed under the p-electrode. The light-emitting structure has or or more trenches which are spaced at a predetermined distance with the n-electrode from the outermost side of the light-emitting structure and in which the active layer of the light-emitting structure is removed.
摘要翻译：垂直GaN基LED包括n型接合焊盘; 形成在n型焊盘下面的n电极; 通过在n电极下依次层叠n型GaN层，有源层和p型GaN层而形成的发光结构体; 形成在发光结构下的p电极; 以及形成在p电极下方的支撑层。发光结构具有与n电极与发光结构的最外侧隔开预定距离的沟槽，并且其中除去发光结构的有源层。

3. 发明授权

US07372078B2 Vertical gallium-nitride based light emitting diode 有权
标题翻译：垂直氮化镓基发光二极管
公开(公告)号：US07372078B2
公开(公告)日：2008-05-13
申请号：US11581003
申请日：2006-10-16
申请人： Tae Sung Jang , Su Yeol Lee , Seok Beom Choi
发明人： Tae Sung Jang , Su Yeol Lee , Seok Beom Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/385
摘要： A vertical GaN-based LED includes: an n-electrode; a light-emitting structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially formed under the n-electrode; a p-electrode formed under the light-emitting structure; a passivation layer formed to cover the side and bottom surfaces of the light-emitting structure and expose a predetermined portion of the p-electrode, the passivation layer being formed of a distributed Bragg reflector (DBR); a plating seed layer formed under the passivation layer and the p-electrode; and a support layer formed under the plating seed layer.
摘要翻译：垂直GaN基LED包括：n电极; 在n电极下依次形成n型GaN层，有源层和p型GaN层的发光结构; 形成在发光结构下的p电极; 钝化层，其形成为覆盖所述发光结构的侧表面和底表面并暴露所述p电极的预定部分，所述钝化层由分布式布拉格反射器（DBR）形成; 形成在钝化层下面的电镀种子层和p电极; 以及形成在电镀种子层下的支撑层。

4. 发明授权

US08115220B2 Vertical light emitting diode and method of manufacturing the same 有权
公开(公告)号：US08115220B2
公开(公告)日：2012-02-14
申请号：US11889562
申请日：2007-08-14
申请人： Su Yeol Lee , Sang Ho Yoon , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Su Yeol Lee , Sang Ho Yoon , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/14 , H01L33/40
摘要： Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.

5. 发明授权

US07695989B2 Method of manufacturing vertical gallium-nitride based light emitting diode 有权
标题翻译：制造垂直氮化镓基发光二极管的方法
公开(公告)号：US07695989B2
公开(公告)日：2010-04-13
申请号：US12406540
申请日：2009-03-18
申请人： Doo Go Baik , Bang Won Oh , Seok Beom Choi , Su Yeol Lee
发明人： Doo Go Baik , Bang Won Oh , Seok Beom Choi , Su Yeol Lee
IPC分类号： H01L21/00
CPC分类号： H01L33/14 , H01L33/02 , H01L33/32
摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.
摘要翻译：提供了一种垂直GaN基LED及其制造方法。垂直GaN基LED可以防止与n型电极接触的n型GaN层的损坏，从而稳定地确保n电极的接触电阻。垂直GaN基LED包括：支撑层; 形成在支撑层上的p电极; 形成在p电极上的p型GaN层; 形成在p型GaN层上的有源层; 在有源层上形成用于n型电极接触的n型GaN层; 形成在所述n型GaN层上以暴露所述n型GaN层的一部分的蚀刻停止层; 以及形成在由蚀刻停止层露出的n型GaN层上的n电极。

6. 发明授权

US07687818B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07687818B2
公开(公告)日：2010-03-30
申请号：US12177517
申请日：2008-07-22
申请人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/145 , H01L33/405
摘要： There is provided a semiconductor light emitting device having excellent light extraction efficiency to efficiently reflect light moving into the device by increasing the total reflectivity of a reflective layer. A semiconductor light emitting device according to an aspect of the invention includes: a substrate, a reflective electrode, a first conductivity semiconductor layer, an active layer, and a second conductivity type semiconductor layer that are sequentially stacked. Here, the reflective electrode includes; a first reflective layer provided on the substrate and including a conductive reflective material reflecting light generated from the active layer; and a second reflective layer provided on the first reflective layer, including one or more dielectric portions reflecting light generated from the active layer, and one or more contact holes filled with a conductive filler to electrically connect the first conductivity type semiconductor layer and the first reflective layer, and having a greater thickness than a wavelength of the generated light.
摘要翻译：提供了具有优异的光提取效率的半导体发光器件，以通过增加反射层的总反射率来有效地反射移入器件的光。根据本发明的一个方面的半导体发光器件包括：依次堆叠的衬底，反射电极，第一导电半导体层，有源层和第二导电类型半导体层。这里，反射电极包括：第一反射层，设置在所述基板上，并且包括反射从所述有源层产生的光的导电反射材料; 以及设置在所述第一反射层上的第二反射层，包括反射从所述有源层产生的光的一个或多个介电部分和填充有导电填料的一个或多个接触孔，以将所述第一导电类型半导体层和所述第一反射层并且具有比所产生的光的波长更大的厚度。

7. 发明授权

US08198114B2 Vertical nitride semiconductor light emitting diode and method of manufacturing the same 有权
标题翻译：垂直氮化物半导体发光二极管及其制造方法
公开(公告)号：US08198114B2
公开(公告)日：2012-06-12
申请号：US12909297
申请日：2010-10-21
申请人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L21/56
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
摘要翻译：垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。与n电极接触的n型氮化物半导体层的表面是平坦的。

8. 发明授权

US07872276B2 Vertical gallium nitride-based light emitting diode and method of manufacturing the same 有权
标题翻译：立式氮化镓系发光二极管及其制造方法
公开(公告)号：US07872276B2
公开(公告)日：2011-01-18
申请号：US11742818
申请日：2007-05-01
申请人： Su Yeol Lee , Bang Won Oh , Doo Go Baik , Tae Sung Jang , Jong Gun Woo , Seok Beom Choi , Sang Ho Yoon , Dong Woo Kim , In Tae Yeo
发明人： Su Yeol Lee , Bang Won Oh , Doo Go Baik , Tae Sung Jang , Jong Gun Woo , Seok Beom Choi , Sang Ho Yoon , Dong Woo Kim , In Tae Yeo
IPC分类号： H01L33/00
CPC分类号： H01L33/387 , H01L33/20 , H01L33/22 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light emission structures.
摘要翻译：制造垂直GaN基LED的方法包括：形成其中n型GaN基半导体层，有源层和p型GaN基半导体层依次层压在基板上的发光结构; 蚀刻发光结构，使得发光结构被分为LED单元; 在每个划分的发光结构上形成p电极; 在分开的发光结构之间填充非导电材料; 在所得结构上形成金属种子层; 在所述金属种子层上形成除了所述发光结构之间的区域的第一镀层; 在所述第一镀层之间的所述金属种子层上形成第二镀层; 将衬底与发光结构分离; 去除通过分离衬底而暴露的发光结构之间的非导电材料; 在n型GaN基半导体层上形成n电极; 以及去除所述发光结构之间的所述金属种子层和所述第二镀层的部分。

9. 发明申请

US20080093618A1 Vertical light emitting diode and method of manufacturing the same 有权
标题翻译：垂直发光二极管及其制造方法
公开(公告)号：US20080093618A1
公开(公告)日：2008-04-24
申请号：US11889562
申请日：2007-08-14
申请人： Su Yeol Lee , Sang Ho Yoon , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Su Yeol Lee , Sang Ho Yoon , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/14 , H01L33/40
摘要： Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.
摘要翻译：提供包括n电极的垂直LED; 形成在n电极下面的n型GaN层，所述n型GaN层具有与n电极接触的表面，所述表面具有含有较大量的Ga + N层的Ga; 形成在n型GaN层下面的有源层; 形成在有源层下面的p型GaN层; 形成在p型GaN层下面的p电极; 以及在p电极下面形成的结构支撑层。

10. 发明授权

US08168454B2 Vertical light emitting diode and method of manufacturing the same 有权
标题翻译：垂直发光二极管及其制造方法
公开(公告)号：US08168454B2
公开(公告)日：2012-05-01
申请号：US12466086
申请日：2009-05-14
申请人： Su Yeol Lee , Sang Ho Yoon , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Su Yeol Lee , Sang Ho Yoon , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L33/14 , H01L33/40
摘要： Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.
摘要翻译：提供包括n电极的垂直LED; 形成在n电极下面的n型GaN层，n型GaN层具有与n电极接触的表面，该表面具有比N大的Ga的Ga + N层; 形成在n型GaN层下面的有源层; 形成在有源层下面的p型GaN层; 形成在p型GaN层下面的p电极; 以及在p电极下面形成的结构支撑层。

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