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1. 发明申请

US20060121632A1 Methods and apparatuses for monitoring and controlling mechanical or chemical-mechanical planarization of microelectronic substrate assemblies 失效
公开(公告)号：US20060121632A1
公开(公告)日：2006-06-08
申请号：US11341132
申请日：2006-01-27
申请人： Jim Hofmann , Gundu Sabde , Stephen Kramer , Scott Moore
发明人： Jim Hofmann , Gundu Sabde , Stephen Kramer , Scott Moore
IPC分类号： H01L21/66 , C03C15/00
CPC分类号： B24B37/013 , B24B21/04 , B24B37/042 , B24B49/16 , H01L21/31053 , H01L22/26
摘要： Methods and devices for mechanical and/or chemical-mechanical planarization of semiconductor wafers, field emission displays and other microelectronic substrate assemblies. One method of planarizing a microelectronic substrate assembly in accordance with the invention includes pressing a substrate assembly against a planarizing surface of a polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface. The method continues by moving the substrate assembly and/or the polishing pad with respect to the other to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity. As the substrate assembly and polishing pad rub against each other, a parameter indicative of drag force between the substrate assembly and the polishing pad is measured or sensed at periodic intervals. The drag force parameter, for example, can be lateral displacement or lateral forces between a first component coupled to one of the substrate assembly or the polishing pad and a second component in either a carrier assembly holding the substrate assembly or a table supporting the polishing pad. The drag force parameter can be measured along a lateral axis to produce a waveform having minimum and maximum peaks relative to minimum and maximum peak drag forces between the substrate assembly and the polishing pad along the axis. The maximum peak drag forces or the difference of the minimum and maximum peak drag forces are processed to generate a force-time relationship. The status of a parameter, such as the onset of planarity or the endpoint of the process, is then estimated by analyzing the force-time relationship.

2. 发明申请

US20060194518A1 Methods for planarization of Group VIII metal-containing surfaces using a fixed abrasive article 审中-公开
标题翻译：使用固定磨料制品平面化第Ⅷ族含金属表面的方法
公开(公告)号：US20060194518A1
公开(公告)日：2006-08-31
申请号：US11398903
申请日：2006-04-06
申请人： Gundu Sabde
发明人： Gundu Sabde
IPC分类号： B24B1/00
CPC分类号： B24D3/00 , B24B7/228 , B24B21/04 , B24B37/042 , Y10T428/12944
摘要： A planarization method includes providing a Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a fixed abrasive article in the presence of a planarization composition, wherein the fixed abrasive article comprises a plurality of abrasive particles having a hardness of no greater than about 6.5 Mohs dispersed within a binder adhered to at least one surface of a backing material.
摘要翻译：平面化方法包括在平坦化组合物的存在下提供含Ⅷ族金属的表面（优选含铂表面）并将其定位成与固定的磨料制品接触，其中固定的磨料制品包括多个磨料颗粒具有分散在粘合到背衬材料的至少一个表面上的粘合剂的粘合剂中的不大于约6.5Mohth的硬度。

3. 发明申请

US20060261040A1 Methods for planarization of group VIII metal-containing surfaces using oxidizing agents 审中-公开
公开(公告)号：US20060261040A1
公开(公告)日：2006-11-23
申请号：US11494172
申请日：2006-07-27
申请人： Rita Klein , Nishant Sinha , Gundu Sabde , Stefan Uhlenbrock , Donald Westmoreland
发明人： Rita Klein , Nishant Sinha , Gundu Sabde , Stefan Uhlenbrock , Donald Westmoreland
IPC分类号： C09K13/00 , C03C15/00
CPC分类号： H01L21/3212 , C09G1/02 , C23F3/06
摘要： A planarization method includes providing a second and/or third row Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a polishing surface in the presence of a planarization composition that includes an oxidizing agent.

4. 发明申请

US20050199588A1 Fixed-abrasive chemical-mechanical planarization of titanium nitride 审中-公开
标题翻译：氮化钛的固定研磨化学机械平面化
公开(公告)号：US20050199588A1
公开(公告)日：2005-09-15
申请号：US11104345
申请日：2005-04-12
申请人： Dinesh Chopra , Gundu Sabde
发明人： Dinesh Chopra , Gundu Sabde
IPC分类号： B24B37/04 , C09K13/00 , C09K13/04 , H01L21/321 , C23F1/00 , B44C1/22 , H01L21/302
CPC分类号： B24B37/0056 , B24B9/065 , B24B37/042 , C09K13/00 , C09K13/04 , C09K13/06 , H01L21/3212 , H01L21/7684 , Y10T29/49156
摘要： Planarizing solutions, and their methods of use, for removing titanium nitride from the surface of a substrate using a fixed-abrasive planarizing pad. The planarizing solutions take the form of an etchant solution or an oxidizing solution. The etchant solutions are aqueous solutions containing an etchant and a buffer. The etchant contains one or more etching agents selective to titanium nitride. The oxidizing solutions are aqueous solutions containing an oxidizer and a buffer. The oxidizer contains one or more oxidizing agents selective to titanium nitride. In either solution, i.e., etchant or oxidizing solution, the buffer contains one or more buffering agents. Titanium nitride layers planarized in accordance with the invention may be utilized in the production of integrated circuits, various apparatus utilizing such integrated circuits, and memory systems.
摘要翻译：平面化解决方案及其使用方法，使用固定磨料平面化垫从基板表面去除氮化钛。平面化溶液采用蚀刻剂溶液或氧化溶液的形式。蚀刻剂溶液是含有蚀刻剂和缓冲液的水溶液。蚀刻剂含有对氮化钛有选择性的一种或多种蚀刻剂。氧化溶液是含有氧化剂和缓冲液的水溶液。氧化剂含有一种或多种对氮化钛有选择性的氧化剂。在任一溶液中，即蚀刻剂或氧化溶液中，缓冲液含有一种或多种缓冲剂。根据本发明平坦化的氮化钛层可以用于集成电路的生产，利用这种集成电路的各种装置以及存储器系统。

5. 发明授权

US06881129B2 Fixed-abrasive chemical-mechanical planarization of titanium nitride 失效
标题翻译：氮化钛的固定研磨化学机械平面化
公开(公告)号：US06881129B2
公开(公告)日：2005-04-19
申请号：US10115675
申请日：2002-04-04
申请人： Dinesh Chopra , Gundu Sabde
发明人： Dinesh Chopra , Gundu Sabde
IPC分类号： B24B37/04 , C09K13/00 , C09K13/04 , H01L21/321 , B24B1/00
CPC分类号： B24B37/0056 , B24B9/065 , B24B37/042 , C09K13/00 , C09K13/04 , C09K13/06 , H01L21/3212 , H01L21/7684 , Y10T29/49156
摘要： Planarizing solutions, and their methods of use, for removing titanium nitride from the surface of a substrate using a fixed-abrasive planarizing pad. The planarizing solutions take the form of an etchant solution or an oxidizing solution. The etchant solutions are aqueous solutions containing an etchant and a buffer. The etchant contains one or more etching agents selective to titanium nitride. The oxidizing solutions are aqueous solutions containing an oxidizer and a buffer. The oxidizer contains one or more oxidizing agents selective to titanium nitride. In either solution, i.e., etchant or oxidizing solution, the buffer contains one or more buffering agents. Titanium nitride layers planarized in accordance with the invention may be utilized in the production of integrated circuits, and various apparatus utilizing such integrated circuits.
摘要翻译：平面化解决方案及其使用方法，使用固定磨料平面化垫从基板表面去除氮化钛。平面化溶液采用蚀刻剂溶液或氧化溶液的形式。蚀刻剂溶液是含有蚀刻剂和缓冲液的水溶液。蚀刻剂含有对氮化钛有选择性的一种或多种蚀刻剂。氧化溶液是含有氧化剂和缓冲液的水溶液。氧化剂含有一种或多种对氮化钛有选择性的氧化剂。在任一溶液中，即蚀刻剂或氧化溶液中，缓冲液含有一种或多种缓冲剂。根据本发明平坦化的氮化钛层可以用于集成电路的制造以及利用这种集成电路的各种装置。

6. 发明授权

US06419554B2 Fixed abrasive chemical-mechanical planarization of titanium nitride 有权
公开(公告)号：US06419554B2
公开(公告)日：2002-07-16
申请号：US09339735
申请日：1999-06-24
申请人： Dinesh Chopra , Gundu Sabde
发明人： Dinesh Chopra , Gundu Sabde
IPC分类号： B24B100
CPC分类号： B24B37/0056 , B24B9/065 , B24B37/042 , C09K13/00 , C09K13/04 , C09K13/06 , H01L21/3212 , H01L21/7684 , Y10T29/49156
摘要： Planarizing solutions, and their methods of use, for removing titanium nitride from the surface of a substrate using a fixed-abrasive planarizing pad. The planarizing solutions take the form of an etchant solution or an oxidizing solution. The etchant solutions are aqueous solutions containing an etchant and a buffer. The etchant contains one or more etching agents selective to titanium nitride. The oxidizing solutions are aqueous solutions containing an oxidizer and a buffer. The oxidizer contains one or more oxidizing agents selective to titanium nitride. In either solution, i.e., etchant or oxidizing solution, the buffer contains one or more buffering agents. Titanium nitride layers planarized in accordance with the invention may be utilized in the production of integrated circuits, and various apparatus utilizing such integrated circuits.

7. 发明授权

US07402094B2 Fixed-abrasive chemical-mechanical planarization of titanium nitride 失效
标题翻译：氮化钛的固定研磨化学机械平面化
公开(公告)号：US07402094B2
公开(公告)日：2008-07-22
申请号：US10116243
申请日：2002-04-04
申请人： Dinesh Chopra , Gundu Sabde
发明人： Dinesh Chopra , Gundu Sabde
IPC分类号： B24B1/00 , C09K3/14
CPC分类号： B24B37/0056 , B24B9/065 , B24B37/042 , C09K13/00 , C09K13/04 , C09K13/06 , H01L21/3212 , H01L21/7684 , Y10T29/49156
摘要： Planarizing solutions, and their methods of use, for removing titanium nitride from the surface of a substrate using a fixed-abrasive planarizing pad. The planarizing solutions take the form of an etchant solution or an oxidizing solution. The etchant solutions are aqueous solutions containing an etchant and a buffer. The etchant contains one or more etching agents selective to titanium nitride. The oxidizing solutions are aqueous solutions containing an oxidizer and a buffer. The oxidizer contains one or more oxidizing agents selective to titanium nitride. In either solution, i.e., etchant or oxidizing solution, the buffer contains one or more buffering agents. Titanium nitride layers planarized in accordance with the invention may be utilized in the production of integrated circuits, and various apparatus utilizing such integrated circuits.
摘要翻译：平面化解决方案及其使用方法，使用固定磨料平面化垫从基板表面去除氮化钛。平面化溶液采用蚀刻剂溶液或氧化溶液的形式。蚀刻剂溶液是含有蚀刻剂和缓冲液的水溶液。蚀刻剂含有对氮化钛有选择性的一种或多种蚀刻剂。氧化溶液是含有氧化剂和缓冲液的水溶液。氧化剂含有一种或多种对氮化钛有选择性的氧化剂。在任一溶液中，即蚀刻剂或氧化溶液中，缓冲液含有一种或多种缓冲剂。根据本发明平坦化的氮化钛层可以用于集成电路的制造以及利用这种集成电路的各种装置。

8. 发明申请

US20060042956A1 Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media 失效
公开(公告)号：US20060042956A1
公开(公告)日：2006-03-02
申请号：US10933053
申请日：2004-09-01
申请人： Whonchee Lee , Gundu Sabde
发明人： Whonchee Lee , Gundu Sabde
IPC分类号： B23H3/00 , C25F3/16
CPC分类号： H01L21/30625 , B23H5/08 , C25F1/00 , C25F3/02 , C25F3/08
摘要： Methods and systems for removing materials from microfeature workpieces are disclosed. A method in accordance with one embodiment of the invention includes providing a microfeature workpiece having a substrate material and a conductive material that includes a refractory metal (e.g., tantalum, tantalum nitride, titanium, and/or titanium nitride). First and second electrodes are positioned in electrical communication with the conductive material via a generally organic and/or non-aqueous electrolytic medium. At least one of the electrodes is spaced apart from the workpiece. At least a portion of the conductive material is removed by passing an electrical current along an electrical path that includes the first electrode, the electrolytic medium, and the second electrode. Electrolytically removing the conductive material can reduce the downforce applied to the workpiece.

9. 发明授权

US06997781B2 Fixed-abrasive chemical-mechanical planarization of titanium nitride 失效
公开(公告)号：US06997781B2
公开(公告)日：2006-02-14
申请号：US10116585
申请日：2002-04-04
申请人： Dinesh Chopra , Gundu Sabde
发明人： Dinesh Chopra , Gundu Sabde
IPC分类号： B24B1/00
CPC分类号： B24B37/0056 , B24B9/065 , B24B37/042 , C09K13/00 , C09K13/04 , C09K13/06 , H01L21/3212 , H01L21/7684 , Y10T29/49156
摘要： Planarizing solutions, and their methods of use, for removing titanium nitride from the surface of a substrate using a fixed-abrasive planarizing pad. The planarizing solutions take the form of an etchant solution or an oxidizing solution. The etchant solutions are aqueous solutions containing an etchant and a buffer. The etchant contains one or more etching agents selective to titanium nitride. The oxidizing solutions are aqueous solutions containing an oxidizer and a buffer. The oxidizer contains one or more oxidizing agents selective to titanium nitride. In either solution, i.e., etchant or oxidizing solution, the buffer contains one or more buffering agents. Titanium nitride layers planarized in accordance with the invention may be utilized in the production of integrated circuits, and various apparatus utilizing such integrated circuits.

10. 发明申请

US20060009136A1 Fixed-abrasive chemical-mechanical planarization of titanium nitride 审中-公开
公开(公告)号：US20060009136A1
公开(公告)日：2006-01-12
申请号：US11215787
申请日：2005-08-30
申请人： Dinesh Chopra , Gundu Sabde
发明人： Dinesh Chopra , Gundu Sabde
IPC分类号： B24B1/00
CPC分类号： B24B37/0056 , B24B9/065 , B24B37/042 , C09K13/00 , C09K13/04 , C09K13/06 , H01L21/3212 , H01L21/7684 , Y10T29/49156
摘要： Titanium nitride layers planarized may be utilized in the production of integrated circuits, and various apparatus utilizing such integrated circuits. Planarizing solutions may be used for removing titanium nitride from the surface of a substrate using a fixed-abrasive planarizing pad. The planarizing solutions take the form of an etchant solution or an oxidizing solution. The etchant solutions are aqueous solutions containing an etchant and a buffer. The etchant contains one or more etching agents selective to titanium nitride. The oxidizing solutions are aqueous solutions containing an oxidizer and a buffer. The oxidizer contains one or more oxidizing agents selective to titanium nitride. In either solution, i.e., etchant or oxidizing solution, the buffer contains one or more buffering agents.

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