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1. 发明授权

US07118905B2 Nucleic acid encoding angiogenesis inhibitor 有权
标题翻译：核酸编码血管生成抑制剂
公开(公告)号：US07118905B2
公开(公告)日：2006-10-10
申请号：US10849961
申请日：2004-05-19
申请人： Jihoon Chang , Jang Seong Kim , Eun Jeong Park , Jung-sun Yum , Soo-il Chung
发明人： Jihoon Chang , Jang Seong Kim , Eun Jeong Park , Jung-sun Yum , Soo-il Chung
IPC分类号： C12N1/20 , C12N15/09 , C12N15/63 , C07H21/04
CPC分类号： C07K14/4703 , A61K38/00
摘要： The present invention provides a novel angiogenesis inhibitor, LK68 whose amino acid sequence is identical with the human apolipoprotein (a) kringle domains IV36, IV37 and V38, a cDNA sequence encoding the LK68, a recombinant expression vector comprising the cDNA, a recombinant microorganism transformed with the recombinant expression vector and a novel use of the LK68 as an anticancer agent and a method for treating angiogenesis-mediated disease. LK68, LK6, LK7 and LK8 exhibit inhibitory activities on the cultured endothelial cell proliferation as well as on the endothelial cell migration. LK68 and its single kringles also inhibit the normal development of capillaries in the chick embryo chorioallantoic membrane (CAM). It was also showed that systemic administration of LK68 causes the inhibition of primary tumor growth, which is correlated with a suppression of tumor-induced angiogenesis. Accordingly, LK68 protein, its single kringles or their functional equivalents may be applied for the development of a potent anti-cancer agent, which is highly effective for angiogenesis-mediated diseases covering cancer, rheumatoid arthritis, psoriasis, ocular angiogenic disease, etc.
摘要翻译：本发明提供了一种新型的血管生成抑制剂LK68，其氨基酸序列与人载脂蛋白（a）三环结构域IV36，IV37和V38相同，编码LK68的cDNA序列，包含cDNA的重组表达载体，转化的重组微生物用重组表达载体和LK68作为抗癌剂的新用途和治疗血管生成介导的疾病的方法。 LK68，LK6，LK7和LK8表现出对培养的内皮细胞增殖以及内皮细胞迁移的抑制活性。 LK68及其单克隆也抑制鸡胚绒毛尿囊膜（CAM）毛细血管的正常发育。还表明，LK68的全身给药导致原发性肿瘤生长的抑制，其与抑制肿瘤诱导的血管发生相关。因此，LK68蛋白，其单克隆或其功能等同物可用于开发有效的抗癌剂，其对于涵盖癌症，类风湿性关节炎，牛皮癣，眼血管生成疾病等的血管生成介导的疾病是非常有效的。

2. 发明授权

US06743428B1 Angiogenesis inhibitor 失效
标题翻译：血管生成抑制剂
公开(公告)号：US06743428B1
公开(公告)日：2004-06-01
申请号：US10088548
申请日：2002-03-15
申请人： Jihoon Chang , Jang Seong Kim , Eun Jeong Park , Jung-sun Yum , Soo-Il Chung
发明人： Jihoon Chang , Jang Seong Kim , Eun Jeong Park , Jung-sun Yum , Soo-Il Chung
IPC分类号： A61K3900
CPC分类号： C07K14/4703 , A61K38/00
摘要： The present invention provides a novel angiogenesis inhibitor, LK68 whose amino acid sequence is identical with the human apolipoprotein (a) kringle domains IV36, IV37 and V38, a cDNA sequence encoding the LK68, a recombinant expression vector comprising the cDNA, a recombinant microorganism transformed with the recombinant expression vector and a novel use of the LK68 as an anticancer agent and a method for treating angiogenesis-mediated disease. LK68, LK6, LK7 and LK8 exhibit inhibitory activities on the cultured endothelial cell proliferation as well as on the endothelial cell migration. LK68 and its single kringles also inhibit the normal development of capillaries in the chick embryo chorioallantoic membrane (CAM). It was also showed that systemic administration of LK68 causes the inhibition of primary tumor growth, which is correlated with a suppression of tumor-induced angiogenesis. Accordingly, LK68 protein, its single kringles or their functional equivalents may be applied for the development of a potent anti-cancer agent, which is highly effective for angiogenesis-mediated diseases covering cancer, rheumatoid arthritis, psoriasis, ocular angiogenic disease, etc.
摘要翻译：本发明提供了一种新型的血管生成抑制剂LK68，其氨基酸序列与人载脂蛋白（a）三环结构域IV36，IV37和V38相同，编码LK68的cDNA序列，包含cDNA的重组表达载体，转化的重组微生物用重组表达载体和LK68作为抗癌剂的新用途和治疗血管生成介导的疾病的方法。 LK68，LK6，LK7和LK8表现出对培养的内皮细胞增殖以及内皮细胞迁移的抑制活性。 LK68及其单克隆也抑制鸡胚绒毛尿囊膜（CAM）毛细血管的正常发育。还表明，LK68的全身给药导致原发性肿瘤生长的抑制，其与抑制肿瘤诱导的血管发生相关。因此，LK68蛋白，其单克隆或其功能等同物可用于开发有效的抗癌剂，其对于涵盖癌症，类风湿性关节炎，牛皮癣，眼血管生成疾病等的血管生成介导的疾病是非常有效的。

3. 发明授权

US07722887B1 Detoxified mutants of escherichia coli heat-labile enterotoxin 有权
标题翻译：大肠杆菌热不稳定肠毒素的解毒突变体
公开(公告)号：US07722887B1
公开(公告)日：2010-05-25
申请号：US10088202
申请日：1999-09-15
申请人： Eun Jeong Park , Jang Seong Kim , Jihoon Chang , Jungsun Yum , Soo-il Chung
发明人： Eun Jeong Park , Jang Seong Kim , Jihoon Chang , Jungsun Yum , Soo-il Chung
IPC分类号： A61K39/108 , A61K39/38 , A61K39/02 , A61K38/00
CPC分类号： C07K14/245 , A61K39/00
摘要： The present invention relates to detoxified and immunologically active proteins (“mutant LTs”) having mutated amino acid sequences of heat-labile enterotoxin of E. coli, DNA sequences encoding the mutant LTs, recombinant expression vectors comprising the DNAs, recombinant microorganisms transformed with the recombinant expression vectors, process for preparing the mutant LTs and pharmaceutical application of the said protein as immunogenic antigens for vaccination and as adjuvants for anti-body production. In contrast to wild-type LT, the mutant LTs did not induce any toxic activities. The mutant LTs elicited high and comparable levels of anti-LT antibodies when delivered either intragastrically or intranasally, inducing systemic and local responses in serum and fecal extracts. Thus, they might be useful for the development of a novel diarrheal vaccine in humans and animals. In addition, the antibody production ability using mutant LTs as an adjuvant may be effective for prevention and treatment of various diseases.
摘要翻译：本发明涉及具有大肠杆菌热不稳定肠毒素突变氨基酸序列的解毒和免疫活性蛋白（“突变LT”），编码突变LT的DNA序列，包含DNA的重组表达载体，用重组表达载体，用于制备突变LT的方法和所述蛋白质的药物应用作为用于疫苗接种的免疫原性抗原以及用于抗体产生的佐剂。与野生型LT相比，突变LT不诱导任何毒性活性。突变LTs在胃内或鼻内递送时引起高水平和相当水平的抗LT抗体，在血清和粪便提取物中诱导全身和局部反应。因此，它们可能对于在人和动物中发展新的腹泻疫苗是有用的。此外，使用突变型LTs作为佐剂的抗体生产能力可有效预防和治疗各种疾病。

4. 发明授权

US6124170A Method for making flash memory 失效
标题翻译：制作闪存的方法
公开(公告)号：US6124170A
公开(公告)日：2000-09-26
申请号：US17926
申请日：1998-02-03
申请人： Min Gyu Lim , Eun Jeong Park
发明人： Min Gyu Lim , Eun Jeong Park
IPC分类号： H01L21/8247 , H01L21/28 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792
CPC分类号： H01L29/42324 , H01L21/28273 , H01L29/42328 , H01L29/7883
摘要： A flash memory is disclosed including a second conductivity-type substrate having first conductivity-type first and second impurity regions spaced apart from each other by a predetermined distance; a second conductivity-type floating gate formed above part of the first impurity region; a first conductivity-type floating gate formed over the second conductivity-type floating gate; and an insulating layer and first conductivity-type control gate sequentially formed on the first conductivity-type floating gate.
摘要翻译：公开了一种闪速存储器，其包括具有彼此隔开预定距离的第一导电类型的第一和第二杂质区的第二导电型衬底; 形成在所述第一杂质区的一部分上方的第二导电型浮栅; 形成在所述第二导电型浮栅上的第一导电型浮栅; 以及依次形成在第一导电型浮栅上的绝缘层和第一导电型控制栅。

5. 发明授权

US06768159B2 Semiconductor device using a polysilicon layer 失效
标题翻译：使用多晶硅层的半导体器件
公开(公告)号：US06768159B2
公开(公告)日：2004-07-27
申请号：US10284333
申请日：2002-10-31
申请人： Eun Jeong Park , Sung Chul Lee
发明人： Eun Jeong Park , Sung Chul Lee
IPC分类号： H01L29788
CPC分类号： H01L27/11521 , H01L21/743 , H01L27/115
摘要： A semiconductor device in which polysilicon is used to form source and drain regions in an initial process step so as to reduce resistance of bit lines and minimize a junction capacitance and thus improve its reliability, and a method for fabricating the same are disclosed, the semiconductor device including a semiconductor substrate, trenches formed in predetermined areas of the semiconductor substrate, an insulating layer formed in the trenches and beneath a surface of the substrate to have a recess, a polysilicon layer formed on the insulating layer in the trench, source and drain regions formed at both sides of the polysilicon layer beneath a surface of the semiconductor substrate, and gates formed over the semiconductor substrate.
摘要翻译：一种半导体器件，其中在初始工艺步骤中使用多晶硅来形成源极和漏极区域，以便降低位线的电阻并最小化结电容，从而提高其可靠性，并且公开了一种其制造方法包括半导体衬底的器件，形成在所述半导体衬底的预定区域中的沟槽，形成在所述沟槽中并在所述衬底的表面下方的绝缘层，以具有凹槽，形成在所述沟槽中的绝缘层上的多晶硅层，源极和漏极形成在半导体衬底的表面下方的多晶硅层的两侧的区域以及形成在半导体衬底上的栅极。

6. 发明授权

US5841161A Flash memory and method for fabricating the same 失效
标题翻译：闪存及其制造方法
公开(公告)号：US5841161A
公开(公告)日：1998-11-24
申请号：US807979
申请日：1997-03-03
申请人： Min Gye Lim , Eun Jeong Park
发明人： Min Gye Lim , Eun Jeong Park
IPC分类号： H01L21/8247 , H01L21/28 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792
CPC分类号： H01L29/42324 , H01L21/28273 , H01L29/42328 , H01L29/7883
摘要： A flash memory is disclosed including a second conductivity-type substrate having first conductivity-type first and second impurity regions spaced apart from each other by a predetermined distance; a second conductivity-type floating gate formed above part of the first impurity region; a first conductivity-type floating gate formed over the second conductivity-type floating gate; and an insulating layer and first conductivity-type control gate sequentially formed on the first conductivity-type floating gate.
摘要翻译：公开了一种闪速存储器，其包括具有彼此隔开预定距离的第一导电类型的第一和第二杂质区的第二导电型衬底; 形成在所述第一杂质区的一部分上方的第二导电型浮栅; 形成在所述第二导电型浮栅上的第一导电型浮栅; 以及依次形成在第一导电型浮栅上的绝缘层和第一导电型控制栅。

7. 发明授权

US06528840B1 Semiconductor device 失效
公开(公告)号：US06528840B1
公开(公告)日：2003-03-04
申请号：US09871616
申请日：2001-06-04
申请人： Eun Jeong Park , Sung Chul Lee
发明人： Eun Jeong Park , Sung Chul Lee
IPC分类号： H01L29788
CPC分类号： H01L27/11521 , H01L21/743 , H01L27/115
摘要： A semiconductor device in which polysilicon is used to form source and drain regions in an initial process step so as to reduce resistance of bit lines and minimize a junction capacitance and thus improve its reliability, and a method for fabricating the same are disclosed, the semiconductor device including a semiconductor substrate, trenches formed in predetermined areas of the semiconductor substrate, an insulating layer formed in the trenches and beneath a surface of the substrate to have a recess, a polysilicon layer formed on the insulating layer in the trench, source and drain regions formed at both sides of the polysilicon layer beneath a surface of the semiconductor substrate, and gates formed over the semiconductor substrate.

8. 发明授权

US06261902B1 Method of forming a transistor structure 失效
标题翻译：形成晶体管结构的方法
公开(公告)号：US06261902B1
公开(公告)日：2001-07-17
申请号：US08925490
申请日：1997-09-08
申请人： Eun Jeong Park , Sung Chul Lee
发明人： Eun Jeong Park , Sung Chul Lee
IPC分类号： H01L21336
CPC分类号： H01L27/11521 , H01L21/743 , H01L27/115
摘要： A semiconductor device in which polysilicon is used to form source and drain regions in an initial process step so as to reduce resistance of bit lines and minimize a junction capacitance and thus improve its reliability, and a method for fabricating the same are disclosed, the semiconductor device including a semiconductor substrate, trenches formed in predetermined areas of the semiconductor substrate, an insualting layer formed in the trenches and beneath a surface of the substrate to have a recess, a polysilicon layer formed on the insualting layer in the trench, source and drain regions formed at both sides of the polysilicon layer beneath a surface of the semiconductor substrate, and gates formed over the semiconductor substrate.
摘要翻译：一种半导体器件，其中在初始工艺步骤中使用多晶硅来形成源极和漏极区域，以便降低位线的电阻并最小化结电容，从而提高其可靠性，并且公开了一种其制造方法包括半导体衬底的器件，形成在半导体衬底的预定区域中的沟槽，形成在沟槽中并在衬底的表面下方的绝缘层，具有凹槽，形成在沟槽中的绝缘层上的多晶硅层，源极和漏极形成在半导体衬底的表面下方的多晶硅层的两侧的区域以及形成在半导体衬底上的栅极。

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