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1. 发明授权

US06548383B1 Twin well methods of forming CMOS integrated circuitry 有权
标题翻译：双阱形成CMOS集成电路的方法
公开(公告)号：US06548383B1
公开(公告)日：2003-04-15
申请号：US09441912
申请日：1999-11-17
申请人： Jigish D. Trivedi , Zhongze Wang , Michael P. Violette
发明人： Jigish D. Trivedi , Zhongze Wang , Michael P. Violette
IPC分类号： H01L21425
CPC分类号： H01L21/823892
摘要： In accordance with an aspect of the invention, a twin-well method of forming CMOS integrated circuitry having first and second conductivity type gates includes conducting a first conductivity type well implant, a second conductivity type well implant, a first conductivity type gate implant and a second conductivity type gate implant using no more than two masking steps. In another aspect of the invention, a twin well method of forming CMOS integrated circuitry having first and second conductivity type transistor gates includes conducting a first conductivity type well implant and a second conductivity type gate implant in a common masking step.
摘要翻译：根据本发明的一个方面，形成具有第一和第二导电类型栅极的CMOS集成电路的双阱方法包括：导电第一导电类型阱注入，第二导电类型阱注入，第一导电型栅极注入和使用不超过两个掩模步骤的第二导电类型栅极注入。在本发明的另一方面，形成具有第一和第二导电类型晶体管栅极的CMOS集成电路的双阱法包括在公共掩模步骤中传导第一导电类型阱注入和第二导电类型栅极注入。

2. 发明授权

US06844601B2 Local interconnect structure for integrated circuit devices, source structure for the same, and method for fabricating the same 失效
标题翻译：用于集成电路器件的局部互连结构，用于其的源结构及其制造方法
公开(公告)号：US06844601B2
公开(公告)日：2005-01-18
申请号：US10000479
申请日：2001-10-24
申请人： Jigish D. Trivedi , Michael P. Violette
发明人： Jigish D. Trivedi , Michael P. Violette
IPC分类号： H01L21/768 , H01L23/532 , H01L29/76 , H01L23/48 , H01L29/94
CPC分类号： H01L21/76895 , H01L23/53257 , H01L2924/0002 , H01L2924/00
摘要： A process for making a local interconnect and the structures formed thereby. The process is practiced by forming a Ti layer having a nitrogen-rich upper portion over a portion of a substrate, forming a refractory metal layer on the Ti layer, forming a Si layer on the refractory metal layer, removing a portion of the Si layer, and heating to form a local interconnect structure. During this process, a source structure for the local interconnect is formed. This source structure comprises a Ti layer having a nitrogen-rich upper portion overlying a portion of a substrate, a refractory metal layer overlying the Ti layer, and a silicon layer overlying the refractory metal layer. The resulting local interconnect comprises a titanium silicide layer disposed on a portion of a substrate, a nitrogen-rich Ti layer disposed on the titanium silicide layer, and a refractory metal silicide layer disposed on the nitrogen-rich Ti layer. The local interconnect is especially useful for reducing cratering and consumption of silicon regions underlying the local interconnect.
摘要翻译：一种制造局部互连的方法及由此形成的结构。该方法通过在衬底的一部分上形成富含氮的上部的Ti层，在Ti层上形成难熔金属层，在难熔金属层上形成Si层，除去Si层的一部分并加热以形成局部互连结构。在该过程中，形成用于局部互连的源结构。该源结构包括具有覆盖在衬底的一部分上的富氮上部的Ti层，覆盖在Ti层上的难熔金属层和覆盖在难熔金属层上的硅层。得到的局部互连包括设置在衬底的一部分上的硅化钛层，设置在硅化钛层上的富氮Ti层和设置在富氮Ti层上的难熔金属硅化物层。局部互连特别适用于减少局部互连底层硅片的凹坑和消耗。

3. 发明授权

US06570232B2 Local interconnect structure for integrated circuit devices, source structure for the same, and method for fabricating the same 有权
公开(公告)号：US06570232B2
公开(公告)日：2003-05-27
申请号：US09999557
申请日：2001-10-19
申请人： Jigish D. Trivedi , Michael P. Violette
发明人： Jigish D. Trivedi , Michael P. Violette
IPC分类号： H01L2976
CPC分类号： H01L21/76895 , H01L23/53257 , H01L2924/0002 , H01L2924/00
摘要： A process for making a local interconnect and the structures formed thereby. The process is practiced by forming a Ti layer having a nitrogen-rich upper portion over a portion of a substrate, forming a refractory metal layer on the Ti layer, forming a Si layer on the refractory metal layer, removing a portion of the Si layer, and heating to form a local interconnect structure. During this process, a source structure for the local interconnect is formed. This source structure comprises a Ti layer having a nitrogen-rich upper portion overlying a portion of a substrate, a refractory metal layer overlying the Ti layer, and a silicon layer overlying the refractory metal layer. The resulting local interconnect comprises a titanium silicide layer disposed on a portion of a substrate, a nitrogen-rich Ti layer disposed on the titanium silicide layer, and a refractory metal silicide layer disposed on the nitrogen-rich Ti layer. The local interconnect is especially useful for reducing cratering and consumption of silicon regions underlying the local interconnect.

4. 发明授权

US06403458B2 Method for fabricating local interconnect structure for integrated circuit devices, source structures 失效
标题翻译：用于制造用于集成电路器件的局部互连结构的方法，源结构
公开(公告)号：US06403458B2
公开(公告)日：2002-06-11
申请号：US09055056
申请日：1998-04-03
申请人： Jigish D. Trivedi , Michael P. Violette
发明人： Jigish D. Trivedi , Michael P. Violette
IPC分类号： H01L214763
CPC分类号： H01L21/76895 , H01L23/53257 , H01L2924/0002 , H01L2924/00
摘要： A process for making a local interconnect and the structures formed thereby. The process is practiced by forming a Ti layer having a nitrogen-rich upper portion over a portion of a substrate, forming a refractory metal layer on the Ti layer, forming a Si layer on the refractory metal layer, removing a portion of the Si layer, and heating to form a local interconnect structure. During this process, a source structure for the local interconnect is formed. This source structure comprises a Ti layer having a nitrogen-rich upper portion overlying a portion of a substrate, a refractory metal layer overlying the Ti layer, and a silicon layer overlying the refractory metal layer. The resulting local interconnect comprises a titanium silicide layer disposed on a portion of a substrate, a nitrogen-rich Ti layer disposed on the titanium silicide layer, and a refractory-metal silicide layer disposed on the nitrogen-rich Ti layer. The local interconnect is especially useful for reducing cratering and consumption of silicon regions underlying the local interconnect.
摘要翻译：一种制造局部互连的方法及由此形成的结构。该方法通过在衬底的一部分上形成富含氮的上部的Ti层，在Ti层上形成难熔金属层，在难熔金属层上形成Si层，除去Si层的一部分并加热以形成局部互连结构。在该过程中，形成用于局部互连的源结构。该源结构包括具有覆盖在衬底的一部分上的富氮上部的Ti层，覆盖在Ti层上的难熔金属层和覆盖在难熔金属层上的硅层。得到的局部互连包括设置在衬底的一部分上的硅化钛层，设置在硅化钛层上的富氮Ti层和设置在富氮Ti层上的难熔金属硅化物层。局部互连特别适用于减少局部互连底层硅片的凹坑和消耗。

5. 发明授权

US06927473B2 Semiconductor fuses and semiconductor devices containing the same 失效
标题翻译：半导体保险丝和含有其的半导体器件
公开(公告)号：US06927473B2
公开(公告)日：2005-08-09
申请号：US10620054
申请日：2003-07-14
申请人： Zhongze Wang , Michael P. Violette , Jigish Trivedi
发明人： Zhongze Wang , Michael P. Violette , Jigish Trivedi
IPC分类号： H01L23/525 , H01L29/00
CPC分类号： H01L21/76888 , H01L23/5256 , H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： Fuses for integrated circuits and semiconductor devices, methods for making and using the same, and semiconductor devices containing the same. The semiconductor fuse contains two conductive layers, an overlying and underlying layer, on an insulating substrate. The underlying layer comprises titanium nitride and the overlying layer comprises tungsten silicide. The semiconductor fuse may be fabricated during manufacture of a local interconnect structure containing the same materials. The fuse, which may be used to program redundant circuitry, is blown by electrical current rather than laser beams, thus allowing the fuse width to be smaller than prior art fuses blown by laser beams. The fuse may also be blown by less electrical current than the current required to blow conventional polysilicon fuses having similar dimensions.
摘要翻译：用于集成电路和半导体器件的保险丝，其制造和使用的方法以及包含该保险丝的半导体器件。半导体熔丝在绝缘基板上包含两层导电层，一层覆盖和下层。底层包括氮化钛，上覆层包括硅化钨。半导体保险丝可以在制造包含相同材料的局部互连结构时制造。可用于编程冗余电路的保险丝由电流而不是激光束吹扫，从而允许熔丝宽度小于由激光束吹制的现有技术的熔丝。熔断器也可能被吹过比吹出具有相似尺寸的常规多晶硅保险丝所需的电流更小的电流。

6. 发明授权

US07816246B2 Methods of making semiconductor fuses 有权
标题翻译：制造半导体保险丝的方法
公开(公告)号：US07816246B2
公开(公告)日：2010-10-19
申请号：US11499134
申请日：2006-08-03
申请人： Zhongze Wang , Michael P. Violette , Jigish Trivedi
发明人： Zhongze Wang , Michael P. Violette , Jigish Trivedi
IPC分类号： H01L21/8234 , H01L21/44
CPC分类号： H01L21/76888 , H01L23/5256 , H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： Fuses for integrated circuits and semiconductor devices and methods for using the same. The semiconductor fuse contains two conductive layers, an overlying and underlying refractory metal nitride layer, on an insulating substrate. The semiconductor fuse may be fabricated during manufacture of a local interconnect structure including the same materials. The fuse, which may be used to program redundant circuitry, may be blown by electrical current rather than laser beams, thus allowing the fuse width to be smaller than prior art fuses blown by laser beams. The fuse may also be blown by less electrical current than the current required to blow conventional polysilicon fuses having similar dimensions.
摘要翻译：用于集成电路和半导体器件的保险丝及其使用方法。半导体熔丝在绝缘基板上包含两层导电层，一层覆盖和下层的难熔金属氮化物层。可以在制造包括相同材料的局部互连结构的过程中制造半导体熔丝。可以用于编程冗余电路的保险丝可以由电流而不是激光束吹扫，从而允许熔丝宽度小于由激光束熔断的现有技术的熔丝。熔断器也可能被吹过比吹出具有相似尺寸的常规多晶硅保险丝所需的电流更小的电流。

7. 发明授权

US06703263B2 Semiconductor fuses, methods of using the same, methods of making the same, and semiconductor devices containing the same 有权
标题翻译：半导体熔丝，其使用方法，制造方法以及包含该半导体熔丝的半导体器件
公开(公告)号：US06703263B2
公开(公告)日：2004-03-09
申请号：US10331033
申请日：2002-12-27
申请人： Zhongze Wang , Michael P. Violette , Jigish Trivedi
发明人： Zhongze Wang , Michael P. Violette , Jigish Trivedi
IPC分类号： H01L2182
CPC分类号： H01L21/76888 , H01L23/5256 , H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： Fuses for integrated circuits and semiconductor devices, methods for making the same, methods of using the same, and semiconductor devices containing the same. The semiconductor fuse contains two conductive layers—an overlying and underlying layer—on an insulating substrate. The underlying layer comprises titanium nitride and the overlying layer comprises tungsten silicide. The semiconductor fuse may be fabricated during manufacture of a local interconnect structure containing the same materials. The fuse, which may be used to program redundant circuitry, is blown by electrical current rather than laser beams, thus allowing the fuse width to be smaller than prior art fuses blown by laser beams. The fuse may also be blown by less electrical current than the current required to blow conventional polysilicon fuses having similar dimensions.
摘要翻译：用于集成电路和半导体器件的保险丝，其制造方法，使用该保险丝的方法以及包含该保险丝的半导体器件。半导体熔丝在绝缘基板上包含两层导电层 - 覆盖层和下层。底层包括氮化钛，上覆层包括硅化钨。半导体保险丝可以在制造包含相同材料的局部互连结构时制造。可用于编程冗余电路的保险丝由电流而不是激光束吹扫，从而允许熔丝宽度小于由激光束吹制的现有技术的熔丝。熔断器也可能被吹过比吹出具有相似尺寸的常规多晶硅保险丝所需的电流更小的电流。

8. 发明授权

US07109105B2 Methods of making semiconductor fuses 有权
公开(公告)号：US07109105B2
公开(公告)日：2006-09-19
申请号：US10838587
申请日：2004-05-04
申请人： Zhongze Wang , Michael P. Violette , Jigish Trivedi
发明人： Zhongze Wang , Michael P. Violette , Jigish Trivedi
IPC分类号： H01L21/8234 , H01L21/44
CPC分类号： H01L21/76888 , H01L23/5256 , H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： Fuses for integrated circuits and semiconductor devices and methods for using the same. The semiconductor fuse contains two conductive layers, an overlying and underlying refractory metal nitride layer, on an insulating substrate. The semiconductor fuse may be fabricated during manufacture of a local interconnect structure including the same materials. The fuse, which may be used to program redundant circuitry, may be blown by electrical current rather than laser beams, thus allowing the fuse width to be smaller than prior art fuses blown by laser beams. The fuse may also be blown by less electrical current than the current required to blow conventional polysilicon fuses having similar dimensions.

9. 发明授权

US06511868B2 Semiconductor fuses, methods of using the same, methods of making the same, and semiconductor devices containing the same 有权
公开(公告)号：US06511868B2
公开(公告)日：2003-01-28
申请号：US09901761
申请日：2001-07-09
申请人： Zhongze Wang , Michael P. Violette , Jigish Trivedi
发明人： Zhongze Wang , Michael P. Violette , Jigish Trivedi
IPC分类号： H01L2182
CPC分类号： H01L21/76888 , H01L23/5256 , H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： Fuses for integrated circuits and semiconductor devices, methods for making the same, methods of using the same, and semiconductor devices containing the same. The semiconductor fuse contains two conductive layers-an overlying and underlying layer-on an insulating substrate. The underlying layer comprises titanium nitride and the overlying layer comprises tungsten silicide. The semiconductor fuse may be fabricated during manufacture of a local interconnect structure containing the same materials. The fuse, which may be used to program redundant circuitry, is blown by electrical current rather than laser beams, thus allowing the fuse width to be smaller than prior art fuses blown by laser beams. The fuse may also be blown by less electrical current than the current required to blow conventional polysilicon fuses having similar dimensions.

10. 发明授权

US06277674B1 Semiconductor fuses, methods of using the same, methods of making the same, and semiconductor devices containing the same 有权
标题翻译：半导体熔丝，其使用方法，制造方法以及包含该半导体熔丝的半导体器件
公开(公告)号：US06277674B1
公开(公告)日：2001-08-21
申请号：US09165754
申请日：1998-10-02
申请人： Zhongze Wang , Michael P. Violette , Jigish Trivedi
发明人： Zhongze Wang , Michael P. Violette , Jigish Trivedi
IPC分类号： H01L2182
CPC分类号： H01L21/76888 , H01L23/5256 , H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： Fuses for integrated circuits and semiconductor devices, methods for making the same, methods of using the same, and semiconductor devices containing the same. The semiconductor fuse contains two conductive layers—an overlying and underlying layer—on an insulating substrate. The underlying layer comprises titanium nitride and the overlying layer comprises tungsten silicide. The semiconductor fuse may be fabricated during manufacture of a local interconnect structure containing the same materials. The fuse, which may be used to program redundant circuitry, is blown by electrical current rather than laser beams, thus allowing the fuse width to be smaller than prior art fuses blown by laser beams. The fuse may also be blown by less electrical current than the current required to blow conventional polysilicon fuses having similar dimensions.
摘要翻译：用于集成电路和半导体器件的保险丝，其制造方法，使用该保险丝的方法以及包含该保险丝的半导体器件。半导体熔丝在绝缘基板上包含两层导电层 - 覆盖层和下层。底层包括氮化钛，上覆层包括硅化钨。半导体保险丝可以在制造包含相同材料的局部互连结构时制造。可用于编程冗余电路的保险丝由电流而不是激光束吹扫，从而允许熔丝宽度小于由激光束吹制的现有技术的熔丝。熔断器也可能被吹过比吹出具有相似尺寸的常规多晶硅保险丝所需的电流更小的电流。

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