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1. 发明授权

US08207593B2 Memristor having a nanostructure in the switching material 有权
标题翻译：在开关材料中具有纳米结构的忆阻器
公开(公告)号：US08207593B2
公开(公告)日：2012-06-26
申请号：US12510589
申请日：2009-07-28
申请人： Alexandre M. Bratkovski , Qiangfei Xia , Jianhua Yang
发明人： Alexandre M. Bratkovski , Qiangfei Xia , Jianhua Yang
IPC分类号： H01L29/00
CPC分类号： H01L45/04 , H01L27/2463 , H01L45/1233 , H01L45/1273 , H01L45/146 , Y10S977/773
摘要： A memristor includes a first electrode having a first surface, at least one electrically conductive nanostructure provided on the first surface, in which the at least one electrically conductive nanostructure is relatively smaller than a width of the first electrode, a switching material positioned upon said first surface, in which the switching material covers the at least one electrically conductive nanostructure, and a second electrode positioned upon the switching material substantially in line with the at least one electrically conductive nanostructure, in which an active region in the switching material is formed substantially between the at least one electrically conductive nanostructure and the first electrode.
摘要翻译：忆阻器包括具有第一表面的第一电极，设置在第一表面上的至少一个导电纳米结构，其中至少一个导电纳米结构相对小于第一电极的宽度，开关材料位于所述第一表面上其中所述开关材料覆盖所述至少一个导电纳米结构，以及位于所述开关材料上的基本上与所述至少一个导电纳米结构一致的第二电极，其中所述开关材料中的有源区域基本上形成在所述至少一个导电纳米结构之间所述至少一个导电纳米结构和所述第一电极。

2. 发明申请

US20110024716A1 MEMRISTOR HAVING A NANOSTRUCTURE IN THE SWITCHING MATERIAL 有权
标题翻译：在开关材料中具有纳米结构的电容器
公开(公告)号：US20110024716A1
公开(公告)日：2011-02-03
申请号：US12510589
申请日：2009-07-28
申请人： Alexandre M. Bratkovski , Qiangfei Xia , Jianhua Yang
发明人： Alexandre M. Bratkovski , Qiangfei Xia , Jianhua Yang
IPC分类号： H01L45/00 , H01L21/30
CPC分类号： H01L45/04 , H01L27/2463 , H01L45/1233 , H01L45/1273 , H01L45/146 , Y10S977/773
摘要： A memristor includes a first electrode having a first surface, at least one electrically conductive nanostructure provided on the first surface, in which the at least one electrically conductive nanostructure is relatively smaller than a width of the first electrode, a switching material positioned upon said first surface, in which the switching material covers the at least one electrically conductive nanostructure, and a second electrode positioned upon the switching material substantially in line with the at least one electrically conductive nanostructure, in which an active region in the switching material is formed substantially between the at least one electrically conductive nanostructure and the first electrode.
摘要翻译：忆阻器包括具有第一表面的第一电极，设置在第一表面上的至少一个导电纳米结构，其中至少一个导电纳米结构相对小于第一电极的宽度，开关材料位于所述第一表面上其中所述开关材料覆盖所述至少一个导电纳米结构，以及位于所述开关材料上的基本上与所述至少一个导电纳米结构一致的第二电极，其中所述开关材料中的有源区域基本上形成在所述至少一个导电纳米结构之间所述至少一个导电纳米结构和所述第一电极。

3. 发明申请

US20120104342A1 Memristive Device 有权
标题翻译：忆阻器
公开(公告)号：US20120104342A1
公开(公告)日：2012-05-03
申请号：US13382281
申请日：2009-07-13
申请人： Jianhua Yang , Qiangfei Xia , Alexandre M. Bratkovski
发明人： Jianhua Yang , Qiangfei Xia , Alexandre M. Bratkovski
IPC分类号： H01L45/00
CPC分类号： H01L45/145 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/142 , H01L45/146 , H01L45/1616
摘要： A memristive device includes a first electrode, a second electrode crossing the first electrode at a non-zero angle, and an active region disposed between the first and second electrodes. The active region has a controlled defect profile throughout its thickness.
摘要翻译：忆阻器件包括第一电极，非零角度与第一电极交叉的第二电极以及设置在第一和第二电极之间的有源区。活性区域在整个厚度上具有受控的缺陷分布。

4. 发明授权

US08575585B2 Memristive device 有权
标题翻译：忆阻器
公开(公告)号：US08575585B2
公开(公告)日：2013-11-05
申请号：US13382281
申请日：2009-07-13
申请人： Jianhua Yang , Qiangfei Xia , Alexandre M. Bratkovski
发明人： Jianhua Yang , Qiangfei Xia , Alexandre M. Bratkovski
IPC分类号： H01L29/02 , H01L47/00 , H01L23/48 , H01L23/52 , H01L29/40 , H01L21/20
CPC分类号： H01L45/145 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/142 , H01L45/146 , H01L45/1616
摘要： A memristive device includes a first electrode, a second electrode crossing the first electrode at a non-zero angle, and an active region disposed between the first and second electrodes. The active region has a controlled defect profile throughout its thickness.
摘要翻译：忆阻器件包括第一电极，非零角度与第一电极交叉的第二电极以及设置在第一和第二电极之间的有源区。活性区域在整个厚度上具有受控的缺陷分布。

5. 发明授权

US08008648B2 Memristors with insulation elements and methods for fabricating the same 有权
标题翻译：具有绝缘元件的忆阻器及其制造方法
公开(公告)号：US08008648B2
公开(公告)日：2011-08-30
申请号：US12509299
申请日：2009-07-24
申请人： Alexandre M. Bratkovski , Qiangfei Xia
发明人： Alexandre M. Bratkovski , Qiangfei Xia
IPC分类号： H01L29/06
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/1233 , H01L45/1246 , H01L45/1273 , H01L45/146 , H01L45/147 , H01L45/148 , Y10S438/90
摘要： Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device comprises an active region disposed between a first electrode and a second electrode. The device includes a first insulation element disposed between the first electrode and an outer portion of a first surface of the active region. The first insulation element is configured with one or more opening through which the first electrode makes physical contact with the active region. The device also includes a second insulation element disposed between the second electrode and an outer portion of a second surface of the active region. The second insulation element is configured with one or more opening through which the second electrode makes physical contact with the second surface.
摘要翻译：本发明的实施例涉及提供非易失性忆阻转换的纳米级忆阻器装置。在一个实施例中，忆阻器装置包括设置在第一电极和第二电极之间的有源区。该装置包括设置在第一电极和有源区域的第一表面的外部之间的第一绝缘元件。第一绝缘元件配置有一个或多个开口，第一电极通过该开口与活性区域物理接触。该装置还包括设置在第二电极和有源区域的第二表面的外部之间的第二绝缘元件。第二绝缘元件配置有一个或多个开口，第二电极通过该开口与第二表面物理接触。

6. 发明申请

US20110017977A1 MEMRISTORS WITH INSULATION ELEMENTS AND METHODS FOR FABRICATING THE SAME 有权
标题翻译：具有绝缘元件的元件及其制造方法
公开(公告)号：US20110017977A1
公开(公告)日：2011-01-27
申请号：US12509299
申请日：2009-07-24
申请人： Alexandre M. Bratkovski , Qiangfei Xia
发明人： Alexandre M. Bratkovski , Qiangfei Xia
IPC分类号： H01L29/12 , H01L29/86
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/1233 , H01L45/1246 , H01L45/1273 , H01L45/146 , H01L45/147 , H01L45/148 , Y10S438/90
摘要： Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device comprises an active region disposed between a first electrode and a second electrode. The device includes a first insulation element disposed between the first electrode and an outer portion of a first surface of the active region. The first insulation element is configured with one or more opening through which the first electrode makes physical contact with the active region. The device also includes a second insulation element disposed between the second electrode and an outer portion of a second surface of the active region. The second insulation element is configured with one or more opening through which the second electrode makes physical contact with the second surface.
摘要翻译：本发明的实施例涉及提供非易失性忆阻转换的纳米级忆阻器装置。在一个实施例中，忆阻器装置包括设置在第一电极和第二电极之间的有源区。该装置包括设置在第一电极和有源区域的第一表面的外部之间的第一绝缘元件。第一绝缘元件配置有一个或多个开口，第一电极通过该开口与活性区域物理接触。该装置还包括设置在第二电极和有源区域的第二表面的外部之间的第二绝缘元件。第二绝缘元件配置有一个或多个开口，第二电极通过该开口与第二表面物理接触。

7. 发明授权

US08107149B2 Negative index material-based modulators and methods for fabricating the same 有权
标题翻译：负基于材料的调制剂及其制造方法
公开(公告)号：US08107149B2
公开(公告)日：2012-01-31
申请号：US12387169
申请日：2009-04-29
申请人： Wei Wu , Alexandre M. Bratkovski , Shih-Yuan Wang , Jingjing Li , Qiangfei Xia
发明人： Wei Wu , Alexandre M. Bratkovski , Shih-Yuan Wang , Jingjing Li , Qiangfei Xia
IPC分类号： G02B26/00 , G02F1/01
CPC分类号： G02F1/01 , G02F3/02 , G02F2202/30 , Y10S977/762 , Y10S977/932 , Y10S977/949 , Y10S977/95
摘要： Various embodiments of the present invention are directed to external, electronically controllable, negative index material-based modulators. In one aspect, an external modulator comprises a negative index material in electronic communication with an electronic signal source. The negative index material receives an electronic signal encoding data from the electronic signal source and an unmodulated carrier wave from an electromagnetic radiation source. Magnitude variations in the electronic signal produce corresponding effective refractive index changes in the negative index material encoding the data in the amplitude and/or phase of the carrier wave to produce an electromagnetic signal.
摘要翻译：本发明的各种实施方案涉及外部的，电子可控的，负指数材料的调节剂。一方面，外部调制器包括与电子信号源电子通信的负索引材料。负索引材料接收来自电子信号源的电子信号编码数据和来自电磁辐射源的未调制载波。电子信号的幅度变化在编码载波的幅度和/或相位中的数据的负指数材料中产生对应的有效折射率变化，以产生电磁信号。

8. 发明申请

US20100277789A1 Negative index material-based modulators and methods for fabricating the same 有权
标题翻译：负基于材料的调制剂及其制造方法
公开(公告)号：US20100277789A1
公开(公告)日：2010-11-04
申请号：US12387169
申请日：2009-04-29
申请人： Wei Wu , Alexandre M. Bratkovski , Shih-Yuan Wang , Jingjing Li , Qiangfei Xia
发明人： Wei Wu , Alexandre M. Bratkovski , Shih-Yuan Wang , Jingjing Li , Qiangfei Xia
IPC分类号： G02F1/01 , H01B13/00 , C23C14/34 , B05D5/12
CPC分类号： G02F1/01 , G02F3/02 , G02F2202/30 , Y10S977/762 , Y10S977/932 , Y10S977/949 , Y10S977/95
摘要： Various embodiments of the present invention are directed to external, electronically controllable, negative index material-based modulators. In one aspect, an external modulator comprises a negative index material in electronic communication with an electronic signal source. The negative index material receives an electronic signal encoding data from the electronic signal source and an unmodulated carrier wave from an electromagnetic radiation source. Magnitude variations in the electronic signal produce corresponding effective refractive index changes in the negative index material encoding the data in the amplitude and/or phase of the carrier wave to produce an electromagnetic signal.
摘要翻译：本发明的各种实施方案涉及外部的，电子可控的，负指数材料的调节剂。一方面，外部调制器包括与电子信号源电子通信的负索引材料。负索引材料接收来自电子信号源的电子信号编码数据和来自电磁辐射源的未调制载波。电子信号的幅度变化在编码载波的幅度和/或相位中的数据的负指数材料中产生对应的有效折射率变化，以产生电磁信号。

9. 发明授权

US08330952B2 Guided mode resonator based Raman enhancement apparatus 有权
标题翻译：引导型谐振器型拉曼增强器
公开(公告)号：US08330952B2
公开(公告)日：2012-12-11
申请号：US12625304
申请日：2009-11-24
申请人： Wei Wu , Jingjing Li , Qiangfei Xia , Jianhua Yang
发明人： Wei Wu , Jingjing Li , Qiangfei Xia , Jianhua Yang
IPC分类号： G01J3/44
CPC分类号： G01J3/44 , G01N21/658 , G02B2006/0325 , G02B2006/12107
摘要： A system for performing Raman spectroscopy comprises a waveguide layer configured with at least one array of features, the at least one array of features being configured to provide guided-mode resonance for at least one wavelength of electromagnetic radiation; and at least one fluid channel disposed in the waveguide layer. An analyte sensor comprises an electromagnetic radiation source configured to emit a range of wavelengths of electromagnetic radiation, the system for performing Raman spectroscopy, and at least one photodetector configured to detect Raman scattered light.
摘要翻译：用于执行拉曼光谱的系统包括配置有至少一个特征阵列的波导层，所述至少一个特征阵列被配置为为至少一个波长的电磁辐射提供导模谐振; 以及设置在波导层中的至少一个流体通道。分析物传感器包括被配置为发射电磁辐射波长范围的电磁辐射源，用于执行拉曼光谱的系统，以及配置成检测拉曼散射光的至少一个光电检测器。

10. 发明授权

US08063395B2 Memristor amorphous metal alloy electrodes 有权
标题翻译：忆阻器非晶金属合金电极
公开(公告)号：US08063395B2
公开(公告)日：2011-11-22
申请号：US12570286
申请日：2009-09-30
申请人： Qiangfei Xia , Jianhua Yang , Shih-Yuan Wang
发明人： Qiangfei Xia , Jianhua Yang , Shih-Yuan Wang
IPC分类号： H01L47/00
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/1206 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/16
摘要： A nanoscale switching device comprises at least two electrodes, each of a nanoscale width; and an active region disposed between and in electrical contact with the electrodes, the active region containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field, wherein at least one of the electrodes comprises an amorphous conductive material.
摘要翻译：纳米级切换装置包括至少两个电极，每个电极具有纳米级宽度; 以及设置在电极之间并且与电极电接触的有源区域，所述有源区域包含能够承载一种掺杂剂并在电场下传输掺杂剂的开关材料，其中所述电极中的至少一个包括非晶导电材料。

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