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    • 2. 发明授权
    • Read/write collison-free static random access memory
    • 读/写无碰撞静态随机存取存储器
    • US5831906A
    • 1998-11-03
    • US827043
    • 1997-03-25
    • Jian-Yau YihNang-Ping Tu
    • Jian-Yau YihNang-Ping Tu
    • G11C11/413G11C7/22G11C8/12G11C11/418G11C11/419H01L21/8244H01L27/11G11C7/00
    • G11C11/419G11C11/418G11C7/22G11C8/12
    • A read/write collision-free static random access memory which can perform read/write operations simultaneously without read/write collisions. The static random access memory includes a plurality of memory cells and its features are that the memory cells are divided into several memory banks wherein each bank has independent reading and writing paths. The number of memory cells for each memory bank can be determined by a specific length of memory cells between some memory cells undergoing reading operation and other memory cells undergoing writing operation, and by the reading speed of said reading operation and the writing speed of the writing operation, whereby the reading operation and the writing operation read and write to two different memory banks of the static random access memory at the same time such that read/write collisions can be prevented.
    • 无读/写冲突的读/写无冲突静态随机存取存储器,可同时执行读/写操作。 静态随机存取存储器包括多个存储单元,其特征在于,存储器单元被分成若干存储体,其中每个存储体具有独立的读取和写入路径。 每个存储体的存储单元的数量可以由经历读取操作的一些存储单元和正在进行写入操作的其他存储单元之间的存储单元的特定长度以及所述读取操作的读取速度和写入的写入速度来确定 从而读取操作和写入操作同时读取和写入静态随机存取存储器的两个不同的存储体,从而可以防止读/写冲突。
    • 10. 发明授权
    • CMOS digital level shifter circuit
    • CMOS数字电平转换电路
    • US4978870A
    • 1990-12-18
    • US382136
    • 1989-07-19
    • Ming-Daw ChenNang-Ping Tu
    • Ming-Daw ChenNang-Ping Tu
    • H03K19/00H03K3/356
    • H03K3/356104
    • The apparatus of the present invention is a CMOS digital level shifter circuit which includes an inverter connected to a voltage generator. The voltage generator comprises an NMOS source follower connected to a directional switching element and a voltage regulating capacitor. The level shifter further includes a latch energized by the same voltage supply energizing the voltage generator. Each branch of the latch has a complementary MOS transistor pair with common gates connected to the output of the inverter and to the input signal respectively. Each complementary transistor pair is connected to the voltage supply by a latch transistor whose gate is cross-connected to the complementary transistor pair of the other branch. Whenever the one transistor in each complementary pair which is connected to ground is on, the latch transistor is latched off by the complementary transistor pair in the other branch after each voltage transition by the input signal, thereby reducing or eliminating DC power consumption, while requiring only a single voltage supply.
    • 本发明的装置是CMOS数字电平转换电路,其包括连接到电压发生器的反相器。 电压发生器包括连接到方向开关元件和电压调节电容器的NMOS源极跟随器。 电平移位器还包括由相同的电压源供电的闩锁,该电压为电压发生器通电。 锁存器的每个分支具有互补MOS晶体管对,其公共栅极分别连接到反相器的输出端和输入信号。 每个互补晶体管对通过其栅极交叉连接到另一个分支的互补晶体管对的锁存晶体管连接到电压源。 每当连接到地的互补对中的一个晶体管导通时,在通过输入信号的每个电压转换之后,锁存晶体管在另一分支中的互补晶体管对被锁存,从而减少或消除直流功耗,同时要求 只有一个电压供应。