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    • 9. 发明授权
    • System, device, and method for adjusting wind turbine component workload
    • 用于调整风力发电机组件工作负载的系统,设备和方法
    • US09377007B2
    • 2016-06-28
    • US13976674
    • 2010-12-30
    • Wei Zhu
    • Wei Zhu
    • F03D7/00F03D7/02H02P9/04F03D7/04
    • F03D7/00F03D7/0204F03D7/0292F03D7/043F05B2270/321F05B2270/329F05B2270/332H02P9/04Y02E10/723
    • A system, a device and a method for controlling an operation of a wind turbine (100) based on a wind turbine component workload. The system includes a control device (120) that is configured to actuate a wind turbine component (130). The system also includes a wind turbine controller (205) that is coupled in communication with the control device (120) and configured to determine a workload associated with the wind turbine component (130) based at least in part on one or more actuations of the wind turbine component (130) by the control device (120) within a time period. The wind turbine controller (205) is also configured to calculate an operating threshold value based at least in part on the calculated workload and to operate the wind turbine component (130) by the control device (120) based on the calculated operating threshold value.
    • 一种用于基于风力涡轮机部件工作负载来控制风力涡轮机(100)的操作的系统,装置和方法。 该系统包括配置成致动风力涡轮机部件(130)的控制装置(120)。 该系统还包括风力涡轮机控制器(205),该风力涡轮机控制器(205)与控制装置(120)相连接并被配置为至少部分地基于风力涡轮机组件(130)的一个或多个动作来确定与风力涡轮机部件(130)相关联的工作负载 风力涡轮机部件(130)由控制装置(120)在一段时间内。 风力涡轮机控制器(205)还被配置为至少部分地基于所计算的工作量来计算操作阈值,并且基于所计算的操作阈值由控制装置(120)操作风力涡轮机部件(130)。
    • 10. 发明申请
    • APPARATUS AND METHOD FOR CALIBRATING LITHOGRAPHY PROCESS
    • 用于校准光刻过程的装置和方法
    • US20110279797A1
    • 2011-11-17
    • US12891738
    • 2010-09-27
    • CHUN CHI CHENSai Hung LamWei ZhuChin Yu Chen
    • CHUN CHI CHENSai Hung LamWei ZhuChin Yu Chen
    • G03B27/42
    • H01L21/67253G03F7/70516H01L23/544H01L2223/54433H01L2924/0002H01L2924/00
    • A calibration wafer may bear one or more different mark types to facilitate inspection of a lithography process. A first mark type may be located on the outer peripheral portion of the wafer to indicate the desired boundary of an edge bead removal (EBR) region. A second mark type may be located on an outer peripheral portion of the wafer to indicate the desired boundary of a wafer edge expose region (WEE). A third mark type may indicate the border of a portion of the wafer expected to bear a wafer identification mark. A fourth mark type may be located at the center of the wafer to allow for precise and uniform application of liquid photoresist material to the calibration wafer. The calibration wafer may be employed in methods of rapidly and easily assessing the accuracy of various phases of photolithography processes.
    • 校准晶片可以承载一种或多种不同的标记类型,以便于光刻工艺的检查。 第一标记类型可以位于晶片的外周部分上,以指示边缘珠去除(EBR)区域的期望边界。 第二标记类型可以位于晶片的外周部分上,以指示晶片边缘曝光区域(WEE)的期望边界。 第三标记类型可以指示期望承载晶片识别标记的晶片的一部分的边界。 第四标记类型可以位于晶片的中心,以允许液体光致抗蚀剂材料精确和均匀地施加到校准晶片。 校准晶片可以用于快速且容易地评估光刻工艺的各个阶段的精度的方法。